{
  "url": "https://openlegislation.uk/customs-duties-spain-and-portugal-order-1987/schedule-3",
  "json_url": "https://openlegislation.uk/customs-duties-spain-and-portugal-order-1987/schedule-3.json",
  "legislation": "uksi/1987/2183",
  "legislation_title": "The Customs Duties (Spain and Portugal) Order 1987",
  "legislation_url": "https://openlegislation.uk/customs-duties-spain-and-portugal-order-1987",
  "path": "schedule/3",
  "kind": "schedule",
  "number": "3",
  "heading": "TOTAL EXEMPTIONS FROM CUSTOMS DUTIES SPAIN",
  "text": "Combined Nomenclature Code:\nDescription of Goods\n(1)\n(2)\nex 0302.21.10\nLesser or Greenland halibut (Reinhardtius hippoglossoides), fresh, chilled or frozen, headless or in pieces\nex 0302.69.95\nSturgeon, fresh, chilled or frozen, whole, headless or in pieces, intended for processing\nex 0302.69.95\nLump fish (Cyclopterus lumpus) with roe, fresh or chilled for processing\nex 0303.80.00\nSoft roes, frozen, intended for the manufacture of deoxyribonucleic acid (DNA)\nex 0302.70.00\nHard fish roes, fresh, chilled or frozen\nex 0303.80.00\nHard fish roes, salted or in brine\nex 0711.90.50\nMushrooms, excluding cultivated mushrooms within the meaning of subheading 07.01 Q I, in salted or sulphur water to which other substances ensuring their temporary preservation have been added, but not specially prepared for immediate consumption\nex 0712.30.00\nMushrooms, excluding cultivated mushrooms within the meaning of subheading 07.01 Q I, dried, dehydrated or evaporated, whole or in identifiable slices or pieces intended for treatment other than simple repacking for retail sale\nex 0713.33.90\nBeans, white, dried, of the species Phaseolus vulgaris of which not more than 2% by weight are retained by a screen with apertures of 8mm in diameter\nex 0804.10.00\nDates, fresh or dried, intended for the processing industry, other than for the production of alcohol\nex 0804.10.00\nDates, fresh or dried, for packing for retail sale into immediate packings of a net capacity not exceeding 11 kg\nex 0810.40.50\nLarge American cranberry, fresh (Vaccinium macrocarpum)\nex 0810.90.90\nRose hips, fresh\nex 0811.90.50\nFruit of the species Vaccinium, whether or not cooked, in frozen state, not containing added sugar\nex 0811.90.90\nRose hips, whether or not cooked, in frozen state not containing added sugar\nex 0811.90.90\nDates, frozen, in immediate packings of a net capacity of 5 kg or more, not intended for the production of alcohol\nGround paprika for use in animal feedingstuffs\nExtract of dewaxed pyrethrum\nex 1604.30.10\nHard fish roes, cleansed of adherent organs and simply salted or in brine\nex 1605.10.00\nCrabs of the species “King” (Paralithodes camchaticus), “Hanasaki” (Paralithodes brevipes), “Kegani” (Erimacrus isenbecki), “Queen” and “Snow” (Chinoecetes spp.), “Red” (Geryon quinquedens), “Rough stone” (Neolithodes asperrimus) Lithodes antarctica, “Mud” (Scylla serrata), “Blue” (Portunus spp.), simply boiled in water and shelled, whether or not frozen, in immediate packings of a net capacity of 2 kg or more\nex 2309.90.10\nFish or marine mammal solubles\nex 2707.99.11\nCrude light oils containing by weight:\nnot less than 10% of vinyltoluenes\nnot less than 10% of indene\nnot less than 1% and not more than 5% naphthalene\nex 2710.00.59\nMixture of hydrocarbons, consisting of 85% or more of linear paraffins by weight, with chain lengths of eight to 16 carbon atoms, and of not more than 13% of alkylbenzenes by weight, with linear chains of 10 to 12 carbon atoms\nex 2712.90.90\nSynthetic paraffin wax having a molecular weight of not less than 460 and not more than 1,560\nex 2712.90.90\nI-Alkenes containing a C 18 to C 30 carbon chains\nex 2804.29.00\nHelium\nex 2805.30.10\nAlloys of cerium and other rare earth metals containing not less than 47% by weight of cerium\nex 2811.29.90\nTellurium dioxide\nex 2812.90.00\nIodine pentafluoride\nex 2818.30.00\nAluminium hydroxide containing by weight not more than:\n0.15% of silicone dioxide\n0.06% of diiron trioxide\n0.2% of disodium oxide\nex 2819.90.00\nChromium dioxide\nex 2820.90.00\nManganese oxide containing not less than 77% by weight of manganese\nex 2833.40.00\nPotassium hydrogenperoxomonosulphate\nex 2834.10.00\nPotassium nitrite for the manufacture of cooling and cutting fluids used in the working of metal or metal carbides (a)\nex 2835.26.00\npenta Calcium hydroxide tris(orthophosphate) for use in non-ferrous metallurgy\nex 2836.91.00\nLithium carbonates not corresponding to the following specifications in the form of white powder, containing 98.5% or more of Li2CO1 and:\nless than 2 ppm of arsenic\nless than 200 ppm of calcium\nless than 200 ppm of chlorides\nless than 20 ppm of iron\nless than 150 ppm of magnesium\nless than 20 ppm of heavy metals\nless than 300 ppm of potassium\nless than 300 ppm of sodium\nless than 200 ppm of sulphates\nex 2840.19.00\nDisodium tetraborate pentahydrate\nex 2841.60.00\nPotassium permanganate\nex 2841.80.00\nCalcium wolframate, for the manufacture of ferro-alloys or deca-ammonium 41-oxododecawolframate (ammomium paratungstate) (a)\nex 2842.90.90\nHydrotalcite (INN)\nex 2843.90.90\nCarboplatin (INN)\nex 3004.90.99\nCarboplatin (INN)\nex 2846.90.00\nLathanum bromide oxide\nex 7202.99.19\nPhosphides of iron (ferro-phosphorus) containing by weight:\nnot less than 68% and not more than 72% of iron\nnot less than 22% and not more than 26% of phosphorus\nnot more than 3.5% of silicon\nof which not less than 99% by weight is of a particle size of less than 20 micrometres, for the manufacture of varnishes or paints (a)\nex 2850.00.10\nSilane (silicone hydride)\nex 2902.19.10\nbeta-Pinene\nex 2902.90.90\nVinyltoluenes\nex 2902.90.90\nTricyclo (8.2.2.2.4,7] hexadeca-1(12),4,6,10,13,15-hexaene\nex 2902.90.90\np-Cymene\nex 2902.90.90\n1,3-Diisopropylbenzene with a purity of not less than 94% by weight\nex 2903.30.10\nCarbon tetrafluoride (tetrafluoromethane)\nex 2903.30.10\nHexafluoropropene\nex 2903.29.00\n1,2,3-Trichloropropenes\nex 2903.30.31\nVinyl bromide\nex 2903.40.00\nBromochloromethane\nex 2903.59.00\n1,6,7,8,9,14,15,16,17,17,18,18-Dodecachloropentacyclo[12.2.1.1.6,9.02,13.05,10]octadeca-7,15-diene, for use in the manufacture of polyamide (a)\nex 2903.69.00\nDi-or tetrachlorotricyclo [8.2.2.24,7] hexadeca-112),4,6,10,13,15-hexaene, mixed isomers\nex 2904.10.00\nMethanesulphonic acid\nex 2904.20.90\nNitromethane\nex 2904.20.90\n1-Nitropropane\nex 2904.20.90\n2-Nitropropane\nex 2904.20.90\nNitroethane\nex 2904.90.10\nMethansulphonyl chloride\nex 2904.90.10\n2,2,2-Trifluorethyl trichloromethanesulphonate\nex 2905.14.10\n2-Methylpropan-2-ol (tert-butyl alcohol) with a purity of not less than 90% but not more than 96% by weight\nex 2905.39.90\nHexane-1,6-diol\nex 2905.39.90\nButane-1,3-diol\nex 2905.39.90\n2,4,7,9-Tetramethyldec-5-yne-4,7-diol\nex 2905.50.90\n2,2-Bis(bromomethyl)propanediol\nex 2906.19.00\nLabd-14-ene-8,13-diol\nex 2907.13.00\n2-Isopropylphenol\nex 2907.13.00\n3-Ethylphenol\nex 2907.29.90\n4,4'-(2,3-Dimethyltetramethylene)dipyrocatechol, not less than 98% pure\nex 2907.29.90\n6,6'6\"-Tri—tert-butyl-4,4',4\"-(1-methylpropan-1-yl-3-ylidene)tri—m-cresol, whether or not containing toluene of crystallization\nex 2907.29.90\n2,5-Di(tert-pentyl)hydroquinone\nex 2908.10.00\n4,4'-(Perfluoroisopropylidene)diphenol\nex 2908.90.90\n2,4-Dinitro-6-octylphenol\nex 2909.30.90\n2-Bromo-6-methoxynaphthalene\nex 2909.30.90\nBis (phenoxyphenoxy) benzene, mixed isomers\nex 2909.30.90\n1,2-Bis (2,4,6,-tribromophenoxy) ethane for use in the manufacture of acrylonitrile-butadiene-styrene (ABS)\nex 2909.49.10\n3,3'-Oxydi(propylene glycol)\nex 2909.49.10\n2-(2-Chloroethoxy)ethanol\nex 2909.49.90\n2,2'-[Isopropylidenebis(2,6-dibromo-4,1-phenyleneoxy)diethanol\nex 2910.90.00\n1,2-Epoxy-4-(epoxyethyl)cyclohexane\nex 2932.90.70\n8,9-Epoxy-3-(3,4-epoxycyclohexyl)-2,4-dioxaspiro [5,5] undecane\nex 2914.19.00\n5-Methylhexan-2-one\nex 2914.19.00\n3,3-Dimethylbutanone\nex 2914.21.00\nRefined natural bornan-2-one(camphor)\nex 2914.49.00\n11—alpha, 17,21-Trihydroxy-16—beta-methylpregna-1,4-diene-3,20-dione\nex 2914.50.00\n4-Methoxy-4-methylpentan-2-one\nex 2914.50.00\n6'-Methoxy-2'-propiononaphthone\nex 2914.69.00\nUbidecarenone (INN) (Coenzyme Q-10)\nex 2914.69.00\n1,4-Naphthoquinone\nex 2914.70.90\n1-Chloro-3,3-dimethylbutanone\nex 2915.39.90\n20-Oxopregna-5,16-dien-3—beta-yl acetate\nex 2937.22.00\nAlclometasone 17,21-dipropionate (INNM)\nex 2915.60.10\n1-Isopropyl-2,2-dimethyltrimethylene diisobutyrate\nex 2916.14.00\n2,3-Epoxypropyl methacrylate\nex 2916.19.90\nButyl perchlorocrotonate\nex 2916.19.90\nCrotonic acid\nex 2917.13.00\nAzelaic acid and sebacic acid\nex 2917.19.90\nSodium 1,2-bis(cyclohexyloxycarbonyl) ethanesulphonate\nex 2917.39.00\nBenzene-1,2,4-tricarboxylic acid\nex 2917.39.00\nBenzene-1,2,4-tricarboxylic acid 1,2-anhydride\nex 2917.39.00\nTetrachlorophthalic anhydride\nex 2917.39.00\nTetrabromophthalic anhydride\nex 2917.39.00\nBenzene-1,2,4-tricarbonyl trichloride\nex 2918.19.10\nMalic acid and its salts, with anL-isomer of not less than 94%\nex 2918.19.90\n2,2-Bis(hydroxymethyl)propionic acid\nex 2918.29.90\nOctadecyl-3-(3,5-di—tert-butyl-4-hydroxyphenyl)propionate\nex 2918.29.90\nPentaerythritol tetrakis[3-(3,5-di—tert-butyl-4-hydroxyphenyl)propionate]\nex 2918.90.00\nDinoprostone (INN)\nex 2918.90.00\nAlprostadil (INN)\nex 2918.90.00\n3,4-Epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate\nex 2918.90.00\n2,6-Dimethoxybenzoic acid\nex 2918.90.00\nMethyl 5-(2,4-dichlorophenoxy)-2-nitrobenzoate\nex 2920.90.90\n1,1'-Dimethyl-2,2'-oxydiethylene tetraphenyl bis(phosphite)\nex 2920.90.90\n0,0'-Dioctadecyl pentaerythritol bis (phosphite)\nex 2920.90.90\n0,0'-Bis(2,4-di—tert-butylphenyl) pentaerythritol bis(phosphite)\nex 2921.19.90\ntert-Butylamine\nex 2921.19.90\n1,1,3,3-Tetramethylbutylamine\nex 2921.19.90\n1,1-Dimethylprop-2-ynylamine\nex 2921.29.00\nN,N,N',N'— Tetrabutylhexamethylenediamine\nex 2921.30.90\nCyclohex-1,3-ylenediamine (1,3-diaminocyclohexane)\nex 2921.49.10\nalpha',alpha',alpha'-Trifluoro-2,3-xylidine\nex 2921.59.00\nm-Phenylenebis(methylamine)\nex 2921.59.00\n1,8-Naphthlenediymine\nex 2922.19.00\nDinoprost (INN), trometamol (INN) salt\nex 2922.19.00\n(+)-4-Dimethylamino-3-methyl-1,2-diphenylbutan-2-ol\nex 2922.19.00\n1-Dioxy-1-(octylamino)—D-glucitol\nex 2922.29.00\nDobutamine (INN) and its salts\nex 2922.30.00\nKetamine hydrochloride (INNM)\nex 2922.49.90\nTranexamic acid (INN)\nex 2922.49.90\nbeta-Alanine\nex 2922.49.90\nDiclofenac sodium (INNM)\nex 2922.50.00\nMetipranolol (INN)\nex 2923.90.70\nDiethyl-1,3-benzodioxol-5-ylaminomethylenemalonate\nex 2922.50.00\n6-Acetyl-1,3-benzodioxol-5-ylammonium chloride\nex 2922.50.00\nLevodopa (INN)\nex 2922.50.00\nNadolol (INN)\nex 2922.50.00\nMethyldopa (INN)\nex 2922.50.00\nIndenolol hydrochloride (INNM)\nex 2924.10.00\n(3-Methacrylamidopropyl)trimethylammonium chloride\nex 2924.10.00\n2-Acrylamido-2-methylpropanesulphonic acid and its sodium or ammonium salts\nex 2933.51.90\nBarbituric acid\nex 2932.90.70\nBendiocarb (ISO)\nex 2924.79.90\nFlutamide (INN)\nex 2924.29.90\n3,5-Dichloro-N-(1,1-dimethylprop-2-ynyl)benzamide\nex 2925.11.00\n1,2-Benzisothiazol-3-one 1,1-dioxide, sodium salt\nex 2925.19.00\n3,3',4,4',5,5',6,6'-Octabromo—N,N'-ethylenediphthalamide\nex 2926.90.90\n[}6)—N-(alpha-Cyano-4-hydroxy-3-methoxy—alpha-methylphenetyl)acetamide\nex 2926.90.90\n2-(3-Phenoxyphenyl)propionitrile\nex 2928.00.00\n20-Hydroxyminopregna-5,16-dien-3-yl acetate\nex 2928.00.00\nCarbidopa (INN)\nex 2928.00.00\nRobenidine-hydrochloride (INNM)\nex 2928.00.00\nN,N-Diethylhydroxylamine\nex 2928.00.00\n3,3'-Bis(3,5-di—tert-buty-4-hydroxyphenyl)N,N'-bipropionamide\nex 2928.00.00\n2,4,6-Trichlorophenylhydrazine\nex 2929.90.00\n0,0-Bis(4—tert-butylphenyl)—N-cyclohexylphosphoramidothioate\nex 2929.10.00\nMethylenedicyclohexyl di-isocyanate, mixed isomers\nex 2929.10.00\np-Phenylene diisocyanate\nex 2929.10.00\ntrans-(Cyclohex-1,4-ylene diisocyanate) for the production of thermoplastic polyurethane elastomers (a)\nex 2929.10.00\n3,3-Dimethylbiphenyl-4,4-diyldiisocyanate\nex 2930.90.90\n2-Methyl-2-(methylthio)propionaldehyde oxime\nex 2930.90.90\nThiophenol\nex 2930.90.90\n2,2'-Thiodiethyl bis[3-(3,5-di—tert-butyl-4-hydroxyphenyl)propionate]\nex 2930.90.90\n4,4'-Sulphonyldiphenol with a purity of not less than 99.5% by weight\nex 2930.90.90\nProbucol (INN)\nex 2930.90.90\nEthoprophos (ISO)\nex 2930.90.90\n3-{(Z)-6-[(S)-2,2-Dimethylcyclopropanecarboxamido]-6-(sodio-oxycarbonyl)hex-5-enylthio)}L-alanine\nex 2930.90.90\nAldicarb (ISO), dissolved in dichloromethane\nex 2931.00.00\n2-Diphenylphosinobenzoic acid\nex 2931.00.00\nCrystalline dimethyltin dichloride in the form of powder, for the production of goods falling within Chapter 70 (a)\nex 2931.00.00\nChlorodiphenylphosphine\nex 2933.90.90\nOctrizole (INN)\nex 2933.90.90\nDrometrizole (INN)\nex 2922.69.90\n2,6-Di—tert-butyl-4-[4,6-bis(octylthio)-1,3,5-triazin-2-ylamino)phenol\nex 2933.90.90\nButorphanol (INN) and its salts\nex 2934.90.90\nTimolol (INN)\nex 2934.90.90\nClotiazepam (INN)\nex 2933.59.90\n1,4-Diazabicyclo[2,2,2]octane (triethylenediamine)\nex 2933.90.90\n2,4-Di—tert-butyl-6-(5-chlorobenzotriazol-2-yl)phenol\nex 2933.39.90\nCarpipramine-dihydrochloride (INNM)\nex 2932.90.90\n2,3-Dihydro-2,2-dimethylbenzofuran-7-ol\nex 2934.90.90\n1-Ethyl-1,4-dihydro-4-oxo[1,3]dioxolo[4,5—g]cinnoline-3-carbonitrile\nex 2933.39.90\nDiphemanil metilsulphate (INN)\nex 2932.90.70\n(25R)-Spirost-5-en-3—beta-ol (diosgenin) and its esters\nex 2933.39.90\nAzatadine-dimaleate (INNM)\nex 2933.59.90\nAmprolium-hydrochloride (INNM)\nex 2933.39.90\n2-(4-Pyridyl)ethanesulphonic acid\nex 2933.90.90\nPrifinium bromide (INN)\nex 2932.29.90\nGlucurolactone (INN)\nex 2934.90.90\n2-Chlorodibenz[bf][1,4]oxazepin-11(10H]-one\nex 2934.90.90\n2,3,5,6-Tetrachloropyridine\nex 2934.90.90\nDiltiazem hydrochloride (INNM)\nex 2934.90.90\n(6R, 7R]-3-Acetoxymethyl-7-[(R)-2-formyloxy-2-phenylacetamido]-8-oxo-5-thia-1-azabicyclo[4,2,0]oct-2-ene-2-carboxylic acid and its salts and esters\nex 2933.59.90\nBuspirone hydrochloride (INNM)\nex 2934.90.90\nAdenosine phosphate (INN)\nex 2934.90.90\n3-(1-Ethyl-1-methylpropyl)isoxazol-5-ylamine\nex 2933.39.90\n4,4'—Bis(hydroximinomethyl)-1,1'-(oxydimethylene)=dipyridinium dichloride\nex 2933.39.90\nEncainide hydrochloride (INNM)\nex 2933.59.90\n5-Bromopyrimidine\nex 2933.59.90\nMinoxidil (INN)\nex 2933.59.90\nTriazolam (INN)\nex 2934.90.90\nDiazoxide (INN)\nex 2934.90.90\n(6R, 7R)-7-Amino-3-(5-methyl-1,3,4-thiadiazool-2-ylthiomethyl)-8-oxo-5-thia-l-azabicyclo[4,2,0]oct-2-ene-2-carboxylic acid and its salts\nex 2933.90.90\nCaptopril (INN)\nex 2933.39.90\nFluxixin meglumine (INNM)\nex 2933.90.90\nTryptophan\nex 2933.39.90\n2-Chloro-5-trifluoromethylpyridine\nex 2933.59.90\nNorfloxacin (INN)\nex 2932.19.00\nLasalocid sodium (INNM)\nex 2932.29.90\n1-Hydroxy-4-[1-(4-hydroxy-3-methoxycarbonyl-1-naphthyl)-3-oxo-1H,3H-benzo[de]isochromen-1-yl]-6-octadecyloxy-2-naphthoic acid\nex 2933.39.90\nIsonicotinonitrile\nex 2934.90.90 and ex 3004.90.99\nTegafur (INN)\nex 2934.90.90\nBis(2-hydroxyethyl) (9,10-dihydro-10-oxo-9-10λ5-phospha-10-phenanthryl-methyl)succinate\nex 2932.29.90\n13,14,15,16-Tetranorlabdano-12,8alpha-lactone\nex 2932.19.00\n5-Nitrofurfurylidene di(acetate)\nex 2932.11.00\nTetrahydrofuran, containing not more than 40 mg per litre in total of tetrahydro-2-methylfuran and tetrahydro-3-methylfuran for the manufacture ofalpha-4-hydroxybutyl—omega-hydroxypoly (oxytetramethylene)\nex 2933.90.90\nEstazolam (INN)\nex 2934.90.90\nTimpedium bromide (INN)\nex 2933.79.00\n6-Hydroxy-2-phenylpyridazin-3(2H)one\nex 2935.00.00\nQuinethazone (INN)\nex 2935.00.00\nSulfaguanidine (INN)\nex 2935.00.00\nSulfathiazole (INN)\nex 2935.00.00\n4-Chloro-5-sulphamoylanthranil—o-toluidide\nex 2935.00.00\n3-[1-(7-Hexadecane-1-sulphonamidoindol-3-yl)-3-oxo-1H,3H-benzo-[de] isochromen-1-yl]indole-7-carboxylic acid\nex 2934.90.90\n(2,3-Dihydro-3-oxobenz[d]isothiazol-2-yl)—N-5-methylisoxazol-3-ylacetamideS,S-dioxide\nex 2936.29.00\nNicotinic acid (INN)\nex 2936.24.00\nDexpanthenol (INN)\nex 2936.29.10\nFolic acid (INN)\nex 2936.29.90\nNicotinamide (INN)\nex 2937.10.10\nSerum gonadotrophin (INN)\nex 2937.22.00\nBetamethasone 17,21-dipropionate (INNM)\nex 2937.22.00\nDiflorasone di(acetate) (INNM)\nex 2937.99.00\nCalcitonin (INN), salmon-type and its salts\nex 2937.99.00\nPrasterone (INN)\nex 2937.99.00\nCalcitonin (INN), porcine\nex 2939.90.90\nVindesine sulphate (INNM)\nex 2940.00.90\nRibose\nex 2940.00.90\nSucralfate (INN)\nex 2940.00.90\nSucrose benzoate, having a saponification equivalent of not more than 175\nex 2941.10.00\nEpicillin (INN)\nex 2941.10.00\nPiperacillin (INN)\nex 2941.10.00 and ex 3004.10.10\nPiperacillin sodium (INM)\nex 2941.90.00\nAmphotericin B (INN)\nex 2941.30.00\nMinocycline (INN) and its salts\nex 2941.90.00\nClindamycin (INN) and its salts and esters\nex 2941.90.00\nSpectinomycin dihydrochloride (INNM), pentahydrate\nex 2941.90.00\nNystatin (INN)\nex 2941.90.00\nSisomicin sulphate (INNM)\nex 2941.90.00\nSpectinomycin sulphate (INNM)\nex 2941.90.00\nTobramycin (INN) and its salts\nex 2941.90.00\nLincomycin (INN) and its salts and esters, for the manufacture of products falling within heading No. 30.03\nex 2941.90.00\nMonensin (INN) and its salts\nex 2941.90.00\nCefaclor (INN) and its hydrates, salts and esters\nex 2941.90.00\nNetilmicin sulphate (INNM)\nex 2941.90.00\nDibekacin sulphate (INNM)\nex 2941.90.00\nCefoxitin sodium (INNM)\nex 2941.90.00\nCefradine (INN)\nex 2941.90.00\nCefamandole (INN) and its salts and esters\nex 2941.90.00\nCefazolin (INN) and its salts\nex 2941.90.00\nLatamoxef (INN) and its salts and esters\nex 2941.90.00\nJosamycin (INN)\nex 2941.90.00\nJosamycin propionate (INNM)\nex 2941.90.00\nRibostamycin sulphate (INNM)\nex 2941.90.00\nFumagillin dicyclohexylammonium (INNM)\nex 2941.90.00\nCeftezole (INN)\nex 2941.90.00\nAztreonam (INN)\nex 2941.90.00\nImipenem\nex 2941.90.00\nCefotetan (INN)\nex 2941.90.00\nCeftizoxime sodium (INNM)\nex 2941.90.00\nMidecamycin (INN) and its acetates\nex 2941.90.00 and ex 3004.20.90\nAmikacin (INN) and its salts\nex 2941.90.00 and ex 3004.20.90\nMitomycin (INN)\nex 2941.90.00 and ex 3004.20.90\nBleomycin sulphate (INNM)\nex 2941.90.00 and ex 3004.20.90\nAclarubicine hydrochloride (INNM)\nex 2905.19.10\nPotassiumtert-butoxide\nex 3002.10.10\nTetanus immunoglobulin\nex 3002.10.10\nAnti-tetanus immunoplasma\nex 3002.10.10\nGerman measles immunoplasma\nex 3002.10.10\nWhooping-cough immunoplasma\nex 3002.10.10\nRabies immunoplasma\nex 3002.10.95\nHuman albumin, whether or not in solution\nex 3002.10.95\nPreserved serum derived from human blood\nex 3002.10.91\nAnti-haemophilic globulin and anti-Rh0 (D)-globulin derived from human blood\nex 3003.39.00\nMixture of oestrogens of equine origin, in powder form\nex 3003.20.00\nMixture of cefradine (INN) and arginine (INN)\nex 3002.10.91\nGamma-globulin, in solution, derived from human blood\nex 3002.10.91\nLyophilized gamma-globulin derived from human blood\nex 3201.90.90\nTanning extracts derived from gambier and myrobolan fruits\nex 3206.10.90, ex 3206.20.90, ex 3206.30.00, ex 3206.41.00, ex 3206.42.00, ex 3206.43.00, ex 3206.49.90\nInorganic colouring matter preparations mentioned in note 3 to Chapter 32, in hollow polyurethane spheres having a diameter of less than 200 micrometres\nex 3207.40.90\nGlass, in the form of flakes, of a length not less than 0.1 mm and not more than 3.5 mm, of a thickness not less than two micrometres and not more than five micrometres\nex 3207.40.90\nGlass in the form of powder or granules, with a silicon dioxide content of not less than 99% by weight\nex 3208.90.10 and ex 3909.50.00\nPolyurethane of 2,2'-(tert-butylimino)diethanol and 4,4'-methylenedicyclohexyl isocyanate, dissolved inN,N-dimethylacetamide, with a copolymer content of not less than 48% by weight\nex 3208.90.10 and ex 3909.50.00\nCopolymer ofp-cresol and divinylbenzene, dissolved inN,N-dimethylacetamide, with a copolymer content of not less than 48% by weight\nex 3402.13.00\nalpha-Methyl—omega-hydroxypoly(oxypropylene), having an average molecular weight of between 240 and 260\nex 3402.90.10\nMixture of docusate sodium (INN) and sodium benzoate\nex 3402.19.00\n2-Alkyl-1-[2-(sodiooxycarbonylmethoxy)ethyl]-1-sodiooxycarbonylmethyl-2-imidazolinium hydroxide\nex 3402.90.10\nPreparation containing not less than 30% by weight 2-Alkyl-1-[2-(sodiooxycarbonylmethoxy)ethyl]-1-sodiooxycarbonylmethyl-2-imidazolinium dodecyl sulphate\nex 3507.90.00\nBromelains (INN)\nex 3507.90.00\nMixture of sreptokinese (INN) and Streptodornase (INN)\nex 3507.90.00\nPyruvate: oxygen oxidoreductase\nex 3507.90.00\nLipoprotein lipase\nex 3507.90.00\nSerrapeptase (INN)\nex 3702.20.00\nColour negative film, of a width not less than 75 mm and not more than 105 mm and of length of 100 m or more, for use in the manufacture of instant picture film packs (a)\nex 3802.90.00\nAcid activated montmorillonite which, when examined by X-ray powder diffraction, shows four principal lines corresponding to crystal interplane spacing values of 0,44, 0,40, 0,33 and 0,25 nm the line corresponding to 0,40 nm being the most intense, for the manufacture of self-copy paper (a)\nex 3806.90.00\nHydroabietyl alcohol\nex 3812.30.90\ntetra-Aluminium nonamagnesium dicarbonate hexacosahydroxide hepta hydrate coated with a surface active agent\nex 3815.18.00\nCatalysts, consisting essentially of diphosphorus pentaoxide on an inert support\nex 3815.19.00\nCatalysts, in the form of spherical grains with a diameter of not less than 1,4 mm and not more than 1,8 mm, consisting of boron trifluoride on an aluminium oxide support\nex 3815.90.00\nCatalysts, in the form of rodlets having a length of not more than 5,0 mm and a diameter of not more than 3,6 mm, consisting of copper oxide and dichromium trioxide\nex 3815.19.00\nCatalysts, consisting of copper chloride, supported on aluminium oxide, for the preparation of dichloroethane, ethylene, hydrochloric acid and oxygen, with a surface area of less than 90 m2/g (a)\nex 3815.19.00\nCatalysts, consisting of chromium trioxide or dichromium trioxide, fixed on a silicon dioxide support with a pore volume, as determined by the nitrogen absorption method, of not less than 2 cm3/g\nex 3815.90.00\nCatalysts, in the form of rodlets having a length of not less than 3 mm and not more than 6 mm and a diameter of not more than 3,8 mm, consisting of not less than 18% and not more than 21% by weight of dichromium trioxide and not less than 78% and not more than 81% by weight of aluminium oxide\nex 3815.11.00\nCatalysts, in the form of granules, consisting of a mixture of oxides on a carrier of aluminium oxide and containing, by weight:\nnot less than 12% and not more than 20% of nickel\nnot less than 5% and not more than 10% of copper\nnot less than 0,5% and not more than 1,5% of manganese\nThe pore volume is not less than 0,25 cm3/g and not more than 0,95 cm3/g and the apparent specific gravity is not less than 0,5 and not more than 1,25\nex 3815.19.00\nCatalysts, in the form of grains, of which not less than 90% by weight have a particle size of less than 10 micrometres, consisting of a mixture of oxides on a carrier of magnesium silicate and containing, by weight:\nnot less than 20% and not more than 35% of copper\nnot less than 2% and not more than 3% of bismuth\nThe catalyst has an apparent specific gravity of not less than 0,2 and not more than 1,0\nex 3815.19.00\nCatalysts, in the form of granules having a diameter of not more than 1,4 mm, consisting of cobalt oxide on a silicon dioxide support\nex 3815.90.00\nCatalysts, in powder form, consisting of a mixture of titanium trichloride and aluminium chloride, containing not less than 20% and not more than 30% by weight of titanium and not less than 55% and not more than 72% by weight of chlorine\nex 3815.12.00\nCatalysts, in the form of granules or rings having a diameter of not less than 3 mm and not more than 10 mm, consisting of silver supported on aluminium oxide, the silver content being not less than 10% and not more than 20% by weight\nex 3815.90.00\nCatalysts consisting of ethyltriphenylphosphonium acetate, dissolved in methanol\nex 3815.19.00\nCatalysts, consisting of copper chloride, supported on aluminium oxide, for the preparation and dichloroethane from ethylene, hydrochloric acid and oxygen, by the fixed bed process (a)\nex 3815.90.00\nCatalysts, in the form of pellets, consisting of mixed vanadium and phosphorus oxides, containing not more than 0,5% by weight of one of the following elements: lithium, potassium, sodium cadmium or zinc, for use in the manufacture of maleic anhydride from butane\nex 3815.19.00\nCatalysts, in the form of powder, consisting of a mixture of titanium, magnesium and aluminium compounds on a carrier of silicon dioxide, containing by weight:\nnot less than 3 and not more than 6% of titanium.\nnot less than 2 and not more than 3% of magnesium.\nnot less than 0,3 and not more than 0,5% of aluminium.\nfor use in the production of polyethylene with a density of at least 0,935 g/cm1\nex 3815.90.00\nCatalysts, consisting of dialkyldimethylammoniumacetate containing chain lengths of 16 and 18 carbon atoms, suspended in organic solvent to a concentration of not less than 40% by weight\nex 3816.00.00\nSintered magnesite mixed with small quantities of mineral oils\nex 3809.91.00\nA mixture of 5-ethyl-2-methyl-2-oxo-1,3,2λ5-dioxaphosphoran-5-ylmethyl methyl methylphosphonate and bis(5-ethyl-2-methyl-2-oxo-1,3,2λ5-dioxaphosphoran-5-ylmethyl)-methylphosphonate\nex 3823.90.99\nButylethylmagnesium dissolved in organic solvents to a concentration of not less than 19% but not more than 30% by weight\nex 3823.90.99\nMixed oxides of barium, bismuth, lead, titanium and zinc in powder form, having a barium content of not less than 5% and a titanium content of not less than 15% by weight, for use as dielectric materials during the manufacture of multilayer ceramic capacitors (a)\nex 3823.90.99\nCalcined bauxite (refractory grade)\nex 3823.90.91\nDiosegnin crude\nex 3823.90.91\n4-(6-Fluoro-2-methylinden-3-ylmethyl)phenyl methyl sulphide dissolved in toluene\nex 3812.30.10\nMixtures ofx-butyl-4-4' isopropylenediphenol andx,x'-dibutyl-4,4'-isopropylidenediphenol\nex 3823.90.99\nMixture of nitromethane and 1,2-epoxybutane\nex 3823.90.91\nResidues of manufacture containing not less than 40% by weight of 11—beta,17,20,21-tetrahydroxy-6-methylpregna-1,4-dien-3-one-21-acetate\nex 3823.90.91\nIntermediate products from the manufacture of monensin salts\nex 3823.90.91\nTetramethylammonium hydroxide dissolved in methanol\nex 3823.90.91\nIntermediate products of the antibiotics manufacturing process obtained from the fermentation ofStreptomyces tenebrariuys, whether or not dried\nex 3823.90.91\nProducts obtained by theN-ethylation of sisomicin (INN)\nex 3823.90.91\nIntermediate products of the antibiotics manufacturing process obtained from the fermentation ofMicromonospora purpurea, whether or not dried\nex 3823.90.91\nCholic acid and 3—alpha, 12—alpha, dihydroxy-5—beta, cholan-24-oic acid (deoxycholic-acid), crude\nex 3823.90.91\nCrude bile acids\nex 3823.90.99\nCollodial antimony pentaoxide\nex 3823.90.99\nMagnesium bromide 2-oxoperhydroazepin-1-ide dissolved inepsilon-caprolactam to a concentration of not less than 20% and not more than 25% by weight\nex 3823.90.99\nReaction products of dibutyl dihydrogendiphosphate and 1,2-epoxypropane for use in the production of non-rigid polyurethane (a)\nex 3823.90.10\n2,3-Bis[2-(perfluoroalkyl)ethylthio]butane-1,4-diol\nex 3823.90.91\nIntermediate products of the antibiotics manufacturing process obtained from the fermentation ofMicromonospora inyoensis, whether or not dried\nex 3823.90.91\nIntermediate products of the antibiotics manufacturing process obtained from the fermentation ofStreptomyces kasugaensis, whether or not dried\nex 3823.90.99\nFilm consisting of the oxides of barium, calcium and either titanium or zirconium, mixed with binding materials\nex 3823.90.99\nMixture of amines derived from dimerized fatty acids with an average molecular weight of between 520 and 550\nex 3823.90.91\nMixture obtained by fermentation containing not less than 5% by weight peptides having the structure of the A chain of human insulin in the form of a salt of theS-sulphonate derivative\nex 3823.90.91\nMixture obtained by fermentation containing not less than 5% by weight peptides having the structure of the B chain of human insulin in the form of a salt of theS-sulphonate derivative\nex 3823.90.99\nCrude lithium hypochlorite\nex 3812.20.00\nReaction mixture containing benzyl 3-isobutyryloxy-1-isopropyl, 2,2-dimethylpropyl phthalate and benzyl 3-isobutyryloxy-2,2,4-trimethylphenyl phthalate\nex 3823.90.99\nMixture of 2-(perfluoroalkyl)ethanethiols containing C6 to C14 perfluoroalkyl chains\nex 3821.00.00\nLyophilized extract of the blood cells of the crabLimulus polyphemus(“Limulus amoebocyte lysate”)\nex 3914.00.00\nColestipol-hydrochloride (INNM)\nex 3909.40.00\nPolycondensation products of phenol and formaldehyde in the form of hollow spheres with a diameter of less than 150 micrometres\nex 3909.30.00\nPolycondensation products of formaldehyde and a mixture of toluene-2-sulphonamide-and toluene-4-sulphonamide\nex 3920.62.00\nReflecting polyester sheeting embossed in a regular pyramidal pattern\nex 3919.90.39\nReflecting polyester sheeting in which microspheres are embedded\nex 3920.62.00\nTransparent film consisting of polyester coated with a layer of indium and silver\nex 3920.62.00\nPolyester film, having a thickness of not less than 74 micrometres and not more than 76 micrometres, for use in the manufacture of flexible magnetic discs (floppy discs) (a)\nex 3919.90.31\nReflecting laminated sheeting, metallized, consisting of one sheet of polyester and at least another sheet of polyester or other plastic material and coated on one side with an adhesive which is protected by a release sheet\nex 3915.90.91\nWaste and scrap of photographic (including cinematographic) and X-ray film\nex 3907.99.00\nPolyester of a mixture of isophthalic acid and terephthalic acid and 4,4'-isopropylidenediphenol\nex 3915.90.99\nWaste and scrap from polyester film coated with a tungsten compound or with rare earth metal compounds\nex 3907.99.00\nPoly(oxy-1,4-phenylenecarbonyl) in powder form\nex 3908.90.00\nPoly(iminomethylene-1,3-phenylenemethyleneiminoadipoyl in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3920.92.00\nFilm consisting of poly(epsilon-caprolactam) blended with:\neither not more than 10% by weight of polyethylene\nor not more than 10% by weight of a copolymer of ethylene with vinyl acetate\nex 3920.92.00\nPoly(epsilon-caprolactam) film having a softening point of not less than 200 °C\nex 3920.99.10\nReflecting polyurethane sheeting\nex 3920.99.19\nPolyimide sheet and strip\nex 3907.20.90\nPoly[oxy(2,6-dibromo-1,4-phenylene)] for use in the manufacture of polyamide (a)\nex 3911.90.10\nPoly(oxy-1,4-phenylenesulphonyl-1,4-phenyleneoxy-1,4-phenyleneisopropylidene-1,4-phenylene) in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3907.20.90\nLiquid poly(oxypropylene) with 3-(3-{2-[2-(2-mercaptoethoxy)ethoxy]ethylthio} propoxycarbonylamino)—p-tolylcarbamoyloxy as the end group\nex 3907.20.90\nPoly[oxy-1,4-phenyleneisopropylidene-1,4-phenyleneoxy-(2-hydroxytrimethylene)], with an average molecular weight of not less than 26,000, in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3920.99.50\nIon-exchange membranes in fluorinated plastic material, for use in chlor-alkali electrolytic cells\nex 3920.10.90\nSynthetic paper pulp, in the form of moist sheets made from unconnected finely branched, polyethylene fibrils, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent\nex 3920.10.90\nSynthetic paper pulp, in the form of moist sheets made from unconnected finely branched fibrils of a mixture of polyethylene and a polyethylene copolymer, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent\nex 3901.20.00\nPolyethylene, in one of the forms mentioned in note 3 (b) to Chapter 39, having a density of not less than 0,958 g/cm3 at 23 °C and containing by weight not more than:\n50 ppm of aluminium\n2 ppm of calcium\n2 ppm of chromium\n2 ppm of iron\n2 ppm of nickel\n2 ppm of titanium\n8 ppm of vanadium\nfor the manufacture of chlorosulphonated polyethylene\nex 3901.20.00\nPolyethylene, in one of the forms mentioned in note 3 (b) to Chapter 39, having a density of not less than 0,945 and not more than 0,985 g/cm1 for the manufacture of typewriter ribbon or similar ribbon\nex 3920.99.50\nMicroporous polytetrafluoroethylene film coated on one side with a polymer permeable to water vapour not less than 30 cm in width and weighing not more than 50 g/m2\nex 3920.99.50\nMicroporous polytetrafluoroethylene film of a width of not less than 30 cm and weighing not more than 22,4 g/m2\nex 3920.99.50\nPoly(1-chlorotrifluoromethylene) film\nex 3920.10.90\nSynthetic paper pulp, in the form of moist sheets made from unconnected finely branched polypropylene fibrils, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent\nex 3901.90.00 and ex 3902.90.00\nAn A-B-A block copolymer of polystyrene, ethylene-butylene copolymer and polystyrene, containing not more than 25% by weight of styrene, in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3903.90.00\nCopolymers, solely of allyl alcohol with styrene, which have an acetyl value of not less than 175\nex 3921.11.00\nCopolymers, entirely of maleic anhydride and styrene, whether or not containing a styrene-butadiene block co-polymer in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3920.99.50\nPlates, made of a copolymer consisting of maleic anhydride and styrene, also containing styrene-block copolymer, covered on both sides with a sheet of the abovementioned copolymer, modified with butadiene or pigmented\nex 3919.90.50\nPolyvinyl chloride sheeting, of a thickness of less than 1 mm, coated with an adhesive in which are embedded hollow glass balls having a diameter of not more than 100 micrometres\nex 3920.42.10.\nReflecting polyvinyl chloride sheeting, wholly embossed on one side in a regular pyramidal pattern\nex 3905.90.00\nCopolymers of vinylidene chloride with vinyl chloride, containing not less than 79,5% by weight of vinylidene chloride, in one of the forms mentioned in note 3 (a) and (b) to Chapter 39, for the manufacture of fibres, monofil or strip (a)\nex 3905.90.00\nPoly(vinyl formal), in one of the forms mentioned in note 3 (b) to Chapter 39, having a molecular weight of not less than 10,000 and not more than 40,000 and containing, by weight:\nnot less than 9,5% and not more than 13% of the acetyl groups, expressed as vinyl acetate\nnot less than 5% and not more than 6,5% of the hydroxy groups, expressed as vinyl alcohol\nex 3920.99.50\nFilms of a thickness of not more than 1 mm, entirely of polyvinyl-alcohol, containing not more than 2% by weight of unhydrolyzed acetate groups expressed as vinyl acetate and not less than 5% and not more than 15% by weight of glycerol as a plasticizer\nex 3920.99.50\nPolyvinyl alcohol film coated on both sides having a total thickness of less than 1 mm and with an extension at break (longitudinal or transversal) of not less than 65%\nex 3920.99.50\nPolyvinyl alcohol film containing not less than 99% by weight of polyvinyl alcohol, uncoated, with a thickness of not more than 1 mm\nex 3920.99.50\nPolyvinyl alcohol film soluble in water at a temperature of 20 °C\nex 3906.90.00\nCopolymers of 2-di-isopropylaminoethyl methacrylate and decyl methacrylate dissolved inN,N-dimethylacetamide, with a copolymer content of not less than 55% by weight\nex 3920.59.00\nCopolymerization products of acrylic and methacrylic esters, in the form of film with a thickness not exceeding 150 micrometres\nex 3906.90.00\nCopolymer of acrylic acid and 2-ethylhexyl acrylate, containing not less than 10% and not more than 11% by weight of 2-ethylhexyl acrylate\nex 3906.90.00\nPoly[N-(3-hydroxyimino-1,1-dimethylbutyl)acrylamide]\nex 3921.90.60\nReflecting polyacrylic sheeting which microspheres are embedded\nex 3904.50.00\nCopolymers of vinylidene chloride and acrylonitrile, in the form of expandable beads of a diameter not less than four micrometres and not more than 20 micrometres\nex 3904.40.00\nCopolymers of vinyl chloride with vinyl acetate and vinyl alcohol, containing by weight not less than 89% and not more than 92% of vinyl chloride, not less than 2% and not more than 6% of vinyl acetate and not less than 4% and not more than 8% of vinyl alcohol, in one of the forms mentioned in note 3 (a) and (b) to Chapter 39\nex 3902.90.00\nPoly(1-ethylethylene) (Polybutene-1) in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3911.90.00\nAlternating copolymer of ethylene and maleic anhydride, for use as a thickener in textile pigment printing pastes (a)\nex 3906.90.00\nCopolymer of acrylonitrile and methylacrylate modified with polybutadienacrylonitrile (NBR)\nex 3904.69.00\nPolyvinyl fluride in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3903.90.00\nPoly(tribromostyrene), containing not less than 66% and not more than 71% by weight of bromine, in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3902.20.90\nSynthetic paper pulp, in the form of moist sheets made from unconnected finely branched fibrils of polypropylene modified by an organic acid, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent\nex 3906.90.00\nPolymerization products of acrylic acid with small quantities of a polyunsaturated monomer for use as a thickener in textile pigment printing pastes or in the manufacture of products falling within heading No 30.03\nex 3906.90.00\nPolymerization products of acrylic acid, with alkyl methacrylate and small quantitites of other monomers for use as thickeners in the manufacture of textile printing pastes\nex 3901.90.00\nCopolymer of a poly(oxyalkylene) ester of a polycarboxylic acid andepsilon-caprolactam\nex 3901.90.00\nIonomer resin consisting of a salt of a copolymer of ethylene and methacrylic acid\nex 3901.90.00\nIonomer resin consisting of a salt of a terpolymer of ethylene, isobutyl acrylate, and methacrylic acid\nex 3911.90.90\nPolymerization products of a (polybutadiene)polyol and two lactamsN,N'-linked by the bivalent acyl radical of a dicarboxylic acid\nex 3904.69.00\nCopolymer of ethylene with chlorotrifluoroethylene, in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3904.69.00\nTerpolymer of ethylene with chlorotrifluoroethylene and hexafluoro(2-methylpropene) in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3904.69.00\nPoly[(R)—p-mentha-1,8-diene] in one of the forms mentioned in note 3 (b) to Chapter 39\nex 3904.69.00\nCopolymer of tetrafluoroethylene and hexafluoropropene compounded with not less than 1% and not more than 51% by weight of one of the following:\nbarium sulphate\ndibismuth trioxide\ndibismuth carbonate dioxide\ntungsten\nin one of the forms mentioned in note 3 (b) to Chapter 39\nex 3901.90.00\nCopolymers of ethylene with acrylic acid, or with methacrylic acid, containing not less than 3% and not more than 30% of acrylic acid or methacrylic acid by weight, in one of the forms mentioned in note 6 (b) to Chapter 39\nex 3901.90.00 and ex 3905.90.00\nCopolymer of vinyl alcohol with ethylene, in one of the forms mentioned in note 6 (b) to Chapter 39\nex 3920.99.50\nPolyvinyl fluoride sheet\nex 3919.90.50, ex 3920.59.00 and ex 3921.90.60\nReflecting sheeting of an acrylic polymer modified by melamine-formaldehyde\nex 3920.99.50\nPolyvinylidene fluoride film\nex 3920.10.90\nCopolymer of ethylene with propylene in the form of self-adhesive strip of a width of not less than 18 mm and not more than 27 mm or not less than 58 and not more than 90 cm and of a thickness not exceeding 1 mm; which, after being extended at 23 °C to twice their original length, returns to its original length, with a tolerance of not more than +15%, within a period of two minutes\nex 3920.10.19 and ex 3920.10.90\nFilm of a thickness of not more than 1 mm of a copolymerization of vinyl alcohol with ethylene containing no other polymerization products or copolymerization products, with an extension at break (longitudinal or transversal) of not less than 65%\nex 3920.99.50 and ex 3921.90.60\nSheet consisting of a copolymer of ethylene with chlorotrifluoroethylene, whether or not backed with a woven glass fibre fabric\nex 3912.39.90\nHydroxyalkylhydroxyethylcellulose\nex 3912.39.90\nAlkylhydroxyethylcellulose\nex 3912.39.90\nHydroxypropylcellulose\nex 3505.10.50\n0-(2-hydroxyethyl)amylopectin hydrolysate\nex 3926.90.91\nTwo polyethylene sheets containing multiple slits laid crosswise upon each other and bonded together\nex 3926.90.91\nReflecting sheeting or tape, consisting of a facing strip of polyvinyl chloride embossed in a regular pyramidal pattern, heat sealed in parallel lines or a grid pattern to a backing strip of plastic material, or of knitted or woven fabric covered on one side with plastic material\nex 4005.91.00\nStrip, consisting of polybutadiene-acrylonitrile containing, in the mass, microspheres, laminated on the upper surface with a polyvinyl chloride sheet also containing microspheres\nex 4104.10.91 and ex 4104.21.00\nLeather of East India kip, whole, whether or not the heads and legs have been removed, each weighing more than 4,5 kg net and not more than 8 kg, not further prepared than vegetable tanned, whether or not having undergone further preservative treatment with oil, but obviously unsuitable for immediate use in the manufacture of leather articles\nex 4416.00.90\nUsed casks and barrels of oak, whether assembled or not; their staves and heads\nex 4421.90.50\nMatch splint, manufactured from aspen(Populus tremuloides), for the manufacture of matches not requiring a specific striking surface (so called “strike-anywhere” matches)\nex 4418.50.00\nShingles for roofs and walls, of coniferous wood\nex 4811.31.00\nBleached paper, impregnated with acrylic resin and coated with poly(vinylidene chloride), or coated with acrylic resin, having a thickness of not less than 200 micrometres and not more than 255 micrometres and a weight per square metre of not less than 165 grams and not more than 185 grams\nex 4811.39.00\nColoured paper, impregnated with acrylic resin and coated with poly(vinylidene chloride), or coated with acrylic resin, having a thickness of not less than 200 micrometres and not more than 255 micrometres and a weight per square metre of not less than 165 grams and not more than 185 grams\nex 4823.90.99\nStrips of paper glued to one another to form a honeycomb with a maximum height of 12 cm, impregnated with a copper-based preservative\nex 4911.91.91\nArtists' screen prints (commonly described as serigraphs), signed by the artist and numbered from 1 to 200\nex 4911.99.00\nMicrocopies on an opaque base for data banks and libraries\nex 5402.49.99 and ex 5402.69.90\nYarn of polytetrafluoroethylene\nex 5402.49.99, ex 5402.59.90 and ex 5402.69.90\nYarn of polyvinyl alcohol, soluble in water at a temperature of 50 °C, for use in the manufacture of weftless “felts” for papermaking machines\nex 5402.49.99\nYarn of a copolymer of glycolic acid and lactic acid for the manufacture of surgical sutures\nex 5402.69.90\nYarn wholly of polyglycollic acid\nex 5402.49.99\nYarn of poly(1,4-dioxanone)\nex 5402.49.99, ex 5402.59.90 and ex 5402.69.90\nNon-textured filament of poly(vinyl alcohol), for the manufacture of sleeves for printing rollers\nex 5402.41.30 and ex 5402.41.90\nYarn of synthetic textile fibres exclusively or aromatic polyamides obtained by the polycondensation ofm-phenylenediamine and isophthalic acid\nex 5402.41.10\nPolyamide yarn, not textured, untwisted or with not more than 22 turns per metre, of crimpable biocomponent filaments consisting of poly(hexamethylene adipamide) and a copolyamide for the manufacture of knee-length stockings falling within subheading 60.03 B I, women’s stockings falling with subheading 60.03 B II a) or panty hose (tights) falling within subheading 60.04 B III a) 1\nex 5402.39.10\nYarn, multiple, of polyamide, coated, impregnated or covered with a phenolic resin\nex 5404.10.90\nMonofil of polytetrafluoroethylene\nex 5404.10.90\nMonofil of poly(1,4-dioxanone)\nex 5404.10.90\nMonofil of a copolymer of 1,3-dioxan-2-one with 1,4-dioxan-2,5-dione for the manufacture of surgical sutures\nex 5404.90.90\nPolyimide strip\nex 5404.90.90\nStrip of polytetrafluoroethylene, whether or not in rolls, with an extension at break not exceeding 25%\nex 5407.71.00\nWoven fabrics of polyvinyl alcohol fibres, for machine embroidery\nex 5407.71.00 or ex 5903.90.99\nWoven poly(tetrafluoroethylene) fibre fabric coated on one side with a copolymer of tetrafluoroethylene and trifluoroethylene having perfluorinated alkoxy side chains ending in carboxylic acid or sulphonic acid groups in the potassium or sodium salt form, whether or not coated on the same side with a metallic inorganic compound\nex 5503.90.90\nTextile fibres of polytetrafluoroethylene\nex 5503.10.19\nTextile fibres exclusively of aromatic polyamides obtained by the polycondensation ofm-phenylenediamine and isophthalic acid, for uses other than the manufacture of articles falling within Chapters 60, 61, 64 and 65 or of materials used in the manufacture of such articles\nex 5503.90.90 and ex 5601.30.00\nPolyvinyl alcohol fibres, whether or not acetalized\nex 5503.90.10 and ex 5503.90.90\nAcetalized, multicomponent spun fibres with a matrix fibril structure, consisting of emulsion polymerized poly(vinyl alcohol) and vinyl chloride\nex 5503.90.90\nFibres wholly of poly(thio-1,4-phenylene)\nex 5504.10.00\nFibres entirely of Modal (ISO)\nex 5808.10.00 and ex 5607.50.90\nBraid, wholly of polyglycollic acid yarn\nex 5808.10.00 and ex 5607.50.90\nBraid of yarn of a copolymer of glycollic acid and lactic acid, whether or not coated, for the manufacture of surgical sutures\nex 5603.00.10, ex 5603.00.93, ex 5603.00.95 and ex 5603.00.99\nBonded fibre fabrics and similar bonded yarn fabrics of aromatic polyamide man-made fibres obtained by polycondensation ofm-phenylenediamine and isophthalic acid, whether or not impregnated or coated, in the piece or cut into rectangles\nex 5603.00.10, ex 5603.00.91 and ex 5603.00.93\nPoly(vinyl alcohol) bonded fibre fabrics, with a thickness of not less than 200 micrometres and not more than 280 micrometres and of a weight of not less than 20 g/m2 and not more than 50 g/m2, whether or not impregnated or coated, in the piece or cut into rectangles\nex 5603.00.10, ex 5603.00.93 and ex 5603.00.95\nBonded fibre fabrics with a thickness of not more than 300 micrometres of spun-bonded polyethylene fibres, with a weight not exceeding 115 g/m2, whether or not impregnated or coated, in the piece or cut into rectangles\nex 5603.00.93 and ex 5603.00.95\nBonded fibre fabrics of polypropylene consisting of a meltblown central layer, laminated on each side with spun-bonded fibres, with a thickness of not more than 550 micrometres and a weight not exceeding 80 g/m2, in the piece or simply cut into rectangular shape, not impregnated or coated\nex 5603.00.10, ex 5603.00.93, ex 5603.00.95 and ex 5603.00.99\nSpun-bonded fibre fabric of continuous polyester filaments bonded together with polyacrylates, pressed and embossed with a weave pattern, whether or not impregnated or coated, in the piece or cut into rectangles\nex 5607.30.00\nCoir yarn, for the manufacture of carpets, carpeting and rugs, mats and the like\n5603.10.90, 5603.20.90 and 5603.90.99\nKnitted or woven fabric, coated or covered on one side with artificial plastic material in which are embedded microspheres\nex 5907.00.00\nTextile fabrics coated with adhesive in which are embedded microspheres, the diameter of which is not more than 75 micrometres and weighing not more than 550 g/m2\nex 5911.10.00\nNeedle punched synthetic fibre felts on a woven synthetic fibre base coated or covered on one side with polytetrafluoroethylene film, for the manufacture of filtration products\nex 5911.90.90\nYarn of poly(p-phenylene terephthalamide), impregnated, oiled\nex 5911.90.90\nYarn and strip of impregnated polytetrafluroethylene, whether or not oiled or graphited\nex 6815.99.90\nMicrospheres containing more than 90% by weight of barium and titanium expressed as barium oxide and titanium dioxide with a diameter of less than 100 micrometres and refractive index of not less than 2,1 and not more than 2,4\nex 6903.20.90 and ex 6914.90.90\nYarn continuous ceramic filaments, each filament of which contains not less than 12% by weight of diboron trioxide, not more than 26% by weight of silicon dioxide and not less than 60% by weight of dialuminium trioxide\nex 6909.19.00\nCatalysts supports consisting of porous cordiertite or mullite ceramic pieces of roughly circular, square, rectangular or oval cross-section with paralllel sides having an overall volume of not less than 240 ml and not more than 11,100 ml, and having a minimum external rectilineal dimension of not less than 20 mm and maximum external rectolineal dimension of not more than 480 mm, having not less than one continuous channel per 100 mm2 running parallel to the main axis of symmetry, the total channel cross-section area being not less than 10% and not more than 80% of the whole cross-section area\nex 6909.19.00\nPlates made of dialuminium trioxide and titanium carbide with dimensions of not more than 48×48 mm, for the manufacture of magnetic heads\nex 7011.20.00\nGlass envelopes, for monochrome cathode-ray tubes, having a rectangular diagonal face of not less than 22 cm and not exceeding 51 cm, and nominal neck diameter of 20 mm, 29 mm or 37 mm\nex 7019.90.10\nNon-textile glass fibres having a diameter of less than four micrometres\nex 7019.31.00, ex 7019.32.00 and ex 7019.39.00\nWebs, felts, thin sheets and similar products of non-textile glass fibres, of a weight per square metre of not more than 120 g and a fibre diameter, excluding any coating of not more than 7 micrometers, for the manufacture of filtration products\nex 7019.10.59\nYarns, spun from continuous glass filaments having a diameter of not less than 5,8 micrometres and not more than 7,1 micrometres of 33, 34 or 51 tex±7,5% or a multiple thereof\nex 7019.10.59\nYarns of 22 tex spun from continuous glass filaments having a diameter of not less than 4,7 and not more than 5,5 micrometres\nex 7019.10.59\nYarns of 33 tex or a multiple thereof obtained from continuous spun glass filaments having a diameter of not less than 2,5 micrometres and not more than 5,1 micrometres, other than those treated so as to improve their adhesion to elastomers\nex 7019.10.59\nYarns, spun from continuous glass filaments having a diameter of not less than 5,8 micrometres and not more than 6,5 micrometres of 33, 34 or 51 tex or a multiple thereof\nex 7410.11.00 and ex 7410.12.00\nSheets and plates of polytetrafluoroethylene, with aluminium oxide or titanium dioxide as a filter or reinforced with glass-fibres fabric, laminated on both sides with copper foil\nex 7507.11.00\nTubes of nickel, not alloyed, of a purity not less than 99% by weight, not deviating from straightness lengthwise by more than 1 mm per 150 cm of lengths, and with an outside diameter either:\nnot less than 231,36 mm and not more than 214 mm or\nnot less than 209,95 mm and not more than 210,59 mm\nor\nnot less than 168,28 mm and not more than 168,78 mm\nex 7606.12.91, ex 7606.12.93 and ex 7606.12.99\nAluminium alloy rectangular strip in coils, not lacquered, varnished, painted or plastic-coated, having a width of not less than 75 and not more than 230 mm and a thickness of not less than 2,9 and not more than 6,5 mm, containing by weight:\nnot less than 18% and not more than 23% of tin\nnot less than 0,7% and not more than 1,5% of copper\nother metals where present each having a concentration lower than that of the copper\nex 8104.90.10\nGround and polished magnesium sheets whose dimensions do not exceed 770×1020 mm, coated on one side with epoxy resin, insensitive to light\nex 8103.90.10\nWire of unalloyed tantalum, of a diameter not less than 0,2 mm and not more than 0,5 mm, for the manufacture of capacitors\nex 8112.20.31\nChromium, in the form of cathode chips, pellets or briquettes, which contains not more than 0,10% by weight of total oxygen, not more than 0,015% by weight of total aluminium and not more than 0,001% by weight of aluminium compounds insoluble in boiling 5N hydrochloric acid and in boiling fuming perchloric acid, and evaluated as aluminium, for the production of alloy for the manufacture of the following parts of gas turbines and jet engines (a):\nblades, fixed or movable, including their rings\nvanes\nnozzles\nex 8111.00.11\nElectrolytic manganese of a purity of at least 99,7% by weight, for the chemical industry\nex 8111.00.11\nElectrolytic manganese of a purity of at least 99,7% by weight, for the production of non-ferrous alloys\nex 8108.10.90\nWaste and scrap titanium\nex 8108.10.10\nTitanium sponge\nex 8419.89.90\nImmersion tube (coils) bundles consisting of an assembly of plastic tubes terminating at each end in a honeycomb structure (end fitting) surrounded by a pipe connector\nex 8421.99.00\nComponents of separators for the separation of gases from gas mixtures, consisting of a bundle of permeable hollow fibres passing through a block of plastic material at one end and sealed at the other end—the whole being enclosed within a metal container, whether or not perforated, of an overall length of not less than 300 mm and not more than 3,700 mm and a diameter of not more than 350 mm\nex 8421.99.00 and ex 5911.90.90\nParts of equipment for the filtration and purification of water, consisting of a bundle of hollow fibres of artificial plastic material with permeable walls, embedded in a block of artificial plastic material at one end and passing through a block of artificial plastic material at the other end, the whole being enclosed in an artificial plastic cylinder\nex 8421.39.71\nApparatus for catalytic conversion of nitrogen oxides into nitrogen and water, consisting of shaped and fired units in honeycomb structure of a mixture of vanadium oxides or vanadium sulphates and titanium dioxide or barian sulphate in a metallic basket not exceeding 120×120×160 cm\nex 8421.99.00\nParts of equipment for the purification of water by reverse osmosis, consisting essentially of plastic-based membranes, supported internally by textile materials which are wound round a perforated tube of plastic material and housed in a plastic cylinder\nex 8421.99.00\nParts of apparatus for catalytic conversion of nitrogen oxides into nitrogen and water, consisting of shaped and fired units in honeycomb structure of a mixture of vanadium oxides or vanadium sulphates and titanium dioxide or barium sulphate or of vanadium oxide, tungsten (wolfram) oxide and titanium dioixide, contained in a metal basket\nex 8439.99.00\nSuction roll shells, not drilled, being alloy steel tubes with a length of not less than 5,207 mm and an outside diameter of not less than 754 mm, for use in machinery for making paper or paperboard\nex 8469.21.00, ex 8469.29.00, ex 8469.31.00 and ex 8469.39.00\nTypewriters with Braille characters\nex 8469.21.00\nElectronic pocket communicators for handicapped persons which, by means of push buttons and printing thermic head, print and issue text on tape\nex 8473.30.00\nAssemblies for automatic data-processing machines, comprising UV-erasable, programmable, read-only memories (EPROMs), with a storage capacity of 256 K bits, consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:\ntwo UV-erasable, programmable, read-only memories (EPROMs), in the form of monolithic integrated circuits, each with a storage capacity of 128 K bits and a quartz window on the upper surface\na decoder in the form of a monolithic integrated circuit\na decoupling capacitor\ntwo resistances\nThe assemblies bear:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDG 7832 MM-30\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines, comprising UV-erasable, programmable, read-only memories (EPROMs), with a storage capacity of 256 K bits, consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:\nfour UV-erasable, programmable, read-only memories (EPROMs), in the form of monolithic integrated circuits, each with a storage capacity of 64 K bits and a quartz window on the upper surface\none decoder in the form of a monolithic integrated circuit\none decoupling capacitor\nThe assemblies bear:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 7832 MC-35\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines, comprising static random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 32 K bits consisting of a multilayer substrate, the exterior of which do not exceed 17×39 mm, with not more than 28 connecting pins, on which are mounted:\ntwo static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits each with a storage capacity of 16 K bits\na decoder in the form of a monolithic integrated circuit\na decoupling capacitor\nThe assemblies bear:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 8804 C-20\nEDH 8804 CL-20\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines, comprising static random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 64 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:\nfour static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits each with a storage capacity of 16 K bits\na decoder in the form of a monolithic integrated circuit\na decoupling capacitor\nThe assemblies have not more than 28 connecting pins and bear:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 8808 B-20\nEDH 8808 C-10\nEDH 8808 C-12\nEDH 8808 C-15\nEDH 8808 C-20\nEDH 8808 CL-15\nEDH 8808 CL-20\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines comprising a UV-erasable, programmable, read-only memory (EPROM) with a storage capacity of 64 K bits and a static random-access memory of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 32 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, on which are mounted:\none UV-erasable, programmable, read-only memory (EPROM) in the form of a monolithic integrated circuit, with a storage capacity of 64 K bits and with a quartz window on the upper surface\ntwo static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits, each with a storage capacity of 16 K bits\none decoder in the form of a monolithic integrated circuit\none decoupling capacitor\ntwo resistances\nThe assemblies bear:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 90804 BS-25 (15)\nEDH 90804 BS-30 (20)\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines comprising UV-erasable, programmable, read-only memories (EPROMs) with a storage capacity of 128 K bits and static random-access memories of C-MOS technology (C-MS S-RAMs) with a storage capacity of 128 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, on which are mounted:\ntwo UV-erasable programmable, read-only memories (EPROMSs) in the form of monolithic integrated circuits, each with a storage capacity of 64 K bits and a quartz window on the upper surface\ntwo static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits, each with a storage capacity of 64 K bits\none decoder in the form of a monolithic integrated circuit\none decoupling capacitor\ntwo resistance\nThe assemblies bear:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 91616 CL-30 (20)\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines, comprising UV-erasable, programmable, read-only memories (EPROMs) with a storage capacity of 64 K bits and static random-access memory in C-MOS technology (C-MOS S-RAM) with a storage capacity of 48 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm with 28 connecting pins on which are mounted:\na UV-erasable, programmable, read-only memory (EPROM) in the form of a monolithic integrated circuit with a storage capacity of 64 K bits and a quartz window on the upper surface.\nthree static random-access memories in C-MOS technology (C-MOS S-RAM) in the form of monolithic integrated circuits each with a storage capacity of 16 K bits\na decoder in the form of a monolithic integrated circuit\na decoupling capacitor\ntwo resistances\nThe assemblies bear:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 90806 BS-25(15)\nEDH 90806 BS-30(20)\nor\nother identification markings relating to assemblies complying with the above description\nex 8473.30.00\nDot matrix displays, whose external dimensions do not exceed 14×40×210 mm excluding cables and connectors, consisting of two glass layers or sheets in which are arranged crystal displays with 2,560 dots (arranged in 16 lines and 160 columns) or 2,400 dots (arranged in 16 lines and 150 columns) mounted on a printed circuit board comprising electronic components providing drive and control functions, with or without 10 or 20-core flat cable connector\nex 8473.30.00\nAssemblies for automatic data-processing machines, comprising state random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 256 K bits, consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×38 mm, on which are mounted:\nfour static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits with a capacity of 64 K bits, each contained in a ceramic housing,\na decoder in the form of a monolithic integrated circuit,\na decoupling capacitor.\nThe assemblies have not more than 28 connecting pins and bear:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 8832 MC 20\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nWinchester or thin film technology magnetic heads for disc file peripherals, as well as carrying arms equipped with such magnetic heads, capable of recording to a density of not less than 10 tracks per millimetre\nex 8473.30.00\nDot matrix displays, whose external dimensions do not exceed 15×90×280 mm excluding cables and connectors consisting of a layer of liquid crystals between two sheets or plates with 30,720 dots (arranged in 64 lines and 480 columns), mounted on a printed-circuit board comprising electronic components providing drive functions, with or without cable and connector\nex 8473.10.00 and ex 8473.30.00\nDot matrix displays consisting of a layer of liquid crystal between two glass sheets or plates with a maximum of 15,360 dots (arranged in 64 lines and 240 columns), complete with an interface electronics board in C-MOS technology whose exterior dimensions do not exceed 181×76×15 mm, with not more than 544 connecting areas\nex 8473.30.00\nMagnetic read/write elements in thin film technology for the manufacture of magnetic heads for disc file peripherals, capable of recording to a density of not less than 10 tracks per mm, in the form of sheets measuring not more than 48×48 mm and containing not less than 200 elements or in the form of strips measuring not more than 4×48 mm and containing not less than 10 elements\nex 8473.30.00\nAssemblies for automatic data-processing machines, consisting of two stacked substrate layers each with two static random-access memories of N-MOS (including H-MOS) technology (N-MOS-S-RAMs), in the form of monolithic integrated circuits each with a storage capacity of 2 K bits and with a total storage capacity of either 8 K×1 bit, or 4 K×2 bits, contained in a housing, the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n4598601\n5121850\n5121934\n5121935\n5122148\n5123059\n5123120\n5123128\n5123129\n5123337\n5123339\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines, consisting of two stacked substrate layers each with two quasi-static random-access memories of N-MOS (including H-MOS) technology, other than dynamic (N-MOS (quasi-static RAMs) in the form of monolithic integrated circuits each with a storage capacity of 4 K bits and with a total storage capacity of either 16 K×1 bit or 8 K×2 bits, contained in a housing the exterior of which do not exceed 13×13 mm, with not more than 24 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n4599766\n4599767\n4599768\n4599769\n4599770\n4599771\n4599772\n4599773\n4599774\n4599893\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines, consisting of two stacked substrate layers with one or two static random access memories of bipolar technology (bipolar S-RAMs) in the form of monolithic integrated circuits, each with a storage capacity of 1 K bits and with a maximum storage capacity of 4 K bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:\nan identification marking, either consisting of or including one of the following combinations of figures:\n770965\n4599497\n7379442\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nAssemblies for automatic data-processing machines comprising static random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 256 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:\nfour static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits each with a capacity of 64 K bits\na decoder in the form of a monolithic integrated circuit\na decoupling capacitor\nThe assemblies have not more than 28 connecting pins and bear:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 8832 MC-20\nor\nother identification markings relating to assemblies complying with the abovementioned description\nex 8473.30.00\nMagnetic bubble memories with a storage capacity of not more than 4 megabits contained in a housing the exterior dimensions of which do not exceed 43×44 mm, with not more than 42 connecting pins or contact areas and bearing:\nan identification marking consisting of or including one of the following combinations of figures or figures and letters:\nBDL 0133\nMBM 2011\nFBM 64 DA\nBDL 0134\nMBM 2256\n7110\nBDN 0151\nFBM 54 DB\n7114-1\nor\nother identification markings relating to magnetic bubble complying with the abovementioned description\nex 8473.30.00\nComponent forming the arithmetic/logic element of a central processing unit, comprising not more than nine printed circuit boards, the dimensions of which do not exceed 290×310 mm on each of which are mounted not more than 121 ECL gate arrays or ECL random access memories (ECL-RAMs) and combinations thereof contained in a framework the dimensions of which do not exceed 611×501×596 mm which serves as a housing and interconnector for the printed circuit boards, which bear:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nCO1B 2675 E 500\nCO1B 2675 H 500\nCO1B 2675 H 501\nCO1B 2675 H 502\nCO1B 2675 H 503\nCO1B 2675 H 504\nor\nother identifications markings relating to components complying with the abovementioned description\nex 8473.10.00 and ex 8473.30.00\nDisplay unit with maximum dimensions, excluding cables and connectors, of 15×115×290 mm, comprising two layers of sheets of glass enclosing 128,000 liquid-crystal dots arranged in 200 rows and 640 columns, fixed to a printed circuit fitted with electronic components peforming control functions, with or without cables and connectors\nex 8401.40.10 and ex 8401.40.90\nIntegrally forged, rough-turned components, with unit weights of more than 150 tonnes, for reactor pressure vessels\nex 8481.80.79\nHydraulic five-stage valve, with two magnetic valves for servo-control, consisting essentially of three plastic sections, for incorporation in water softening devices with automatic regeneration (throughflow and counterflow) with a maximum capacity of 650 L ion exchange volume\nex 8483.10.90\nIntegrally forged and roughly shaped generator and turbine shafts of a weight exceeding 215 tonnes\nex 8501.10.99\nDC electric motor, brushless, with a maximum torque of 0,20 N/m, with an incorporated electronic control plate, outside rotor with circular cross-section and maximum diameter of 95 mm, aluminium precision-made hub with inside diameter of 28,6 mm, speed of 300 or 360 rpm, supply voltage of 12 volts±10%\nex 8501.10.99\nDC electric motor, brushless, with a maximum torque of 0,20 N/m, with outside rotor of a maximum diameter of 55 mm, coupling flange of a diameter of 77 mm and precision-made chuck of a diameter of 44 mm, four-phase winding rated speed of 3,600 rpm, supply voltage 12 volts±10% and fitted with wires and connectors\nex 8501.10.99\nTwo or three-phase DC electric motor, brushless, with a maximum torque of 0,20 N/m, with an internal rotor of 62 mm maximum diameter and incorporating an electronic control panel, maximum dimensions 85×85×20 mm, including the shaft, nominal operating voltage of 12 volts±10% and a rate of rotation of 300 rpm\nex 8501.10.99\nBipolar stepping motors with an angle of step of 1,8 degrees 200 steps per revolution, 2-phase rotation sequence with bipolar-type windings, maximum external dimensions of 39×39×20 or 25 mm excluding shaft, fixing screws and boss, with a minimum torque of 0,25 N/m for the version with a maximum height of 20 mm and 0,35 N/m for the version with a maximum height of 25 mm\nex 8501.10.99\nHybrid stepping motor, with an angle of step of 0,9°, 400 steps per revolution, 4-phase rotation sequence with bipolar-type winding, consisting of a rotor, of a laminated stator held between two square flanges, not more than 40 mm wide, fitted with biterminate shaft, wires and connectors\nex 8501.10.99\nHybrid stepping motor with an angle of step of 0,9°, 400 steps per revolution, 2-phase rotation sequence and bipolar windings, comprising a rotor and a stator encapsulated in a cylindrical housing with a maximum diameter of 47 mm and maximum thickness of 14 mm, fitted with a single shaft output and cables with connectors\nex 8501.10.99\nHybrid stepping motor with an angle of step of 0,9°, 400 steps per revolution and 2-phase rotation sequence, and bipolar windings, comprising a rotor, a laminated stator enclosed between two square section flanges with sides not exceeding 40 mm, an integral two or three-phase tachometer enclosed in a cap with a maximum diameter of 35 mm, and separate cables and connectors for the motor and tachometer outputs, with maximum dimensions of 40×40×62 mm, including the shaft\nex 8506.19.10\nLithium iodine single cell battery with dimensions of 45×9×23 mm and a voltage not exceeding 2,8\nex 8506.19.90\nDry zinc/carbon batteries of a voltage of not less than 5,5 and not more than 6,5 and of a size not exceeding 110×90×5 mm, for incorporation in film cassettes for instant pictures\nex 8517.90.91 and ex 8542.20.00\nOpto-electronic receiving device (PINFET receiver) with a wavelength range 1,300—1,600 nanometres, and a speed of not less than 165 megabits per second, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25 mm×13 mm×13 mm, with not more than 16 connecting pins, with an attached optical fibre lead (pig-tail), and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\n416/7/9/7013\nQDFI-XXXX-001\nor\nother identification markings relating to devices complying with the abovementioned description\nex 8532.30.90\nAdjustable capacitor, in the form of a circular plate fitted with a screw head in its centre and two connecting tags, of a thickness not exceeding 3 mm and a capacity of from 5 to 30 picofarads, for the manufacture of products falling within Chapter 91\nex 8536.41.10 ex 8536.41.90 and ex 8536.49.00\nThermal relays contained in a hermetically sealed glass cartridge not exceeding 35 mm in length excluding wires, with a maximum leakage rate of 10-6cm3 He/sec at 1 bar in the temperature range 0 to 160°C, to be incorporated into compressors for refrigerating equipment\nex 8536.50.00\nReed switches in the form of a glass capsule containing not more than three electrical contacts on metal arms and a small quantity of mercury\nex 8534.00.11\nSingle-face printed circuit, of dimensions not exceeding 30×30 mm, for the manufacture of products falling within Chapter 91\nex 8540.30.00\nCathode-ray tubes with dot mask (so-called dot-mask technology), with electron guns arranged in triangular fashion (so-called delta technology), with a distance between the coloured dots of 0,31 mm, with devices for automatic convergence\nex 8540.30.00\nCathode-ray tubes with a memory (direct view storage tubes) for the reproduction of alphanumeric and analogue data, equipped with a scanning device, for reading the images\nex 8540.30.00\nColour cathode-ray tubes, using shadow mask, in-line technology in which images are displayed on a screen with a usable surface not exceeding 165×165 mm for use in electronic flight instrument, warning and systems displays\nex 8540.30.00\nColour cathode-ray tubes with a dot mask equipped with electron guns placed side by side (in-line technology) with a distance of less than 0,4 mm between colour dots and with at least one of the following characteristics:\na diagonal screen measurement of at least 48 cm, a diagonal angle of deflection of at most 90° and convergence errors of not more than 0,8 mm maximum in the corners\nequipped with an inseparable cladding on the tubes for absorbing vibrations (petting system)\nwithout internal magnetic screen\nequipped with a phosphor layer calibrated with the following co-ordinates for the colour dots: red: X=0,64 and Y=0,33 or X=0,64 and =0,34: green: X=0,29 and Y=0,60 or X=0,31 and Y=0,595; blue: X=0,15 and Y=0,06 or X=0,155 and Y=0,07\nex 8540.30.00\nColour cathode ray tubes with a dot mask equipped with electron guns in a triangular fashion (delta technology) with a distance of less than 0,4 mm between colour dots, with at least one of the following characteristics:\na diagonal screen measurement of at least 66 cm\nequipped with a phosphor layer calibrated with the following co-ordinates for the colour dots; red: X=0,64 and Y=0,33 or X=0,64 and Y=0,34; green: X=0,29 and Y=0,60 or X=0,31 and Y=0,595; blue: X=0,15 and Y=0,06 or X=0,155 and Y=0,07\nex 8540.89.11\nDisplays in the form of a tube consisting of a glass housing mounted on a board the dimensions of which do not exceed 350×300 mm excluding leads. The tube contains one or more rows of characters or lines arranged in rows, each character or line consisting of fluorescent or phosphorescent elements. These elements are mounted on metallized base which is covered with fluorescent substances or phosphorescent salts which give off light when bombarded with electrons\nex 8541.60.00\nQuartz crystal oscillating at a frequency of 4,194,304 Hz, contained in a housing, for the manufacture of products falling within Chapter 91\nex 8541.60.00\nQuartz crystal oscillating at a frequency of 32,768 Hz, contained in a cylindrical housing of a length not exceeding 8,2 mm and a diameter not exceeding 3,2 mm, for the manufacture of products falling within Chapter 91\nex 8541.40.10 and ex 8542.20.00\nDigital displays of a size not exceeding 25×35 mm, consisting of a printed circuit board on which are mounted, under a plastic cover, up to 22 light-emitting diodes manufactured from gallium-based semi-conductor compounds. Each display consists of a single character with or without a plus or minus sign and/or one or two dots\nex 8541.40.10 and ex 8542.20.00\nDigital displays, consisting of a printed circuit board of a size not exceeding 35×90 mm with a single line of characters, not less than two in number, comprising light-emitting diodes made from gallium-based semi-conductor compounds mounted thereon. Each character is composed of up to eight segments with or without a decimal point and the line of characters has a protective cover of plastic\nex 8542.11.71\nRead-only memory in C-MOS technology (C-MOS ROM) with a storage capacity of 256 K bits and a standby current of not more than 0.03 mA, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×50 mm, with not more than 54 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nHN 61256\nHN 613256\nMB 83256\nor\nother identification markings relating to C-MOS ROMs complying with the abovementioned description\nex 8542.11.71\nRead-only memory of C-MOS technology (C-MOS ROM) with a storage capacity of 1 megabit in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nHN 62301 P,\nMB 831124,\nTC 531000 P\nor\nother identification markings relating to C-MOS ROMs complying with the abovementioned description\nex 8542.11.91\nUV-erasable, programmable, read-only memories (EP-ROMs) with a storage capacity of 2 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with a quartz window on the upper surface and bearing:\nan identification marking either consisting of one of the following combinations of figures or including one of following combinations:\nAMI 702 ADC\n82140 PP\nor\nother identification markings relating to EPROMs complying with the abovementioned description\nex 8542.11.91\nUV-erasable, programmable, read-only memories (EP-ROMs) with a storage capacity of 256 K bits, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 17×39 mm, with a quartz window on the upper surface and bearing:\nan identification marking either consisting of or including the following combination of figures or figures and letters:\nD 27256\n27256\nTM 27256 JL\n27 C 256\nor\nother identification markings relating to EPROMs complying with the abovementioned description\nex 8542.11.71\nMemories in the form of a monolithic integrated circuit consisting of a multi-layer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor two resistances and one UV-erasable, programmable read-only memory (EPROM) having a storage capacity of 64 K bits and a quartz window on the upper surface and three static random-access memories in C-MOS technology (C-MOS S-RAM's) each having a storage capacity of 16 K bits and a total capacity of 48 K bits with not more than 28 connecting pins. The assemblies bear:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 90 806 BS-25 (15)\nEDH 90 806 BS-30 (20)\nor\nother identification markings relating to memories complying with the above description\nex 8542.11.91\nUV-erasable, programmable, read-only memories (EP-ROMs), in the form of monolithic integrated circuits, consisting of a multilayer substrate whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor, two resistances and two EPROMs each having a storage capacity of 128 K bits and with a total storage capacity of 256 K bits, with two quartz windows on the upper surface and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 7832 MM-30\nor\nother identification markings relating to EPROMs complying with the abovementioned description\nex 8542.11.71\nMemories in the form of monolithic integrated circuits, consisting of a multilayer substrate whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and four UV-erasable, programmable, read-only memories (EPROMs) each having a storage capacity of 64 K bits and with a total EPROM capacity of 256 K bits, with a quartz window on the upper surface and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 7832 MC-35\nother identification markings relating to EPROMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of C-MOS technology (C-MOS S-RAMs), in the form of monolithic integrated circuit consisting of a multilayer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and two chips each having a storage capacity of 16 K bits and with a total storage capacity of 32 K bits, with not more than 28 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 8804 C-20\nEDH 8804 CL-20\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of C-MOS technology (C-MOS S-RAMs), in the form of a monolithic integrated circuit consisting of a multilayer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and four chips each having a storage capacity of 16 K bits and with a total storage capacity of 64 K bits, with not more than 28 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nEDH 8808 B-20\nEDH 8808 C-10\nEDH 8808 C-12\nEDH 8808 C-15\nEDH 8808 C-20\nEDH 8808 CL-15\nEDH 8808 CL-20\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of C-MOS technology (C-MOS S-RAMs), in the form of a monolithic integrated circuit consisting of a multilayer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and four chips each having a storage capacity of 64 K bits and with a total storage capacity of 256 K bits, with not more than 28 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 8832 MC-20\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nMemories, in the form of monolithic integrated circuits consisting of a multi-layer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor, two resistances and one UV-erasable, programmable, read-only memory (EPROM) having a storage capacity of 64 K bits, two static random-access memories of C-MOS technology (C-MOS S-RAMs) each having a storage capacity of 16 K bits and which a total S-RAM storage capacity of 32 K bits, with not more than 28 connecting pins, with a quartz window on the upper surface and bearing:\nan identification marking either consisting of or including the following combinations of figures and letters:\nEDH 90804 BS-25 (15)\nEDH 90804 BS-30 (20)\nor\nother identification markings relating to memories complying with the abovementioned description\nex 8542.11.71\nMemories, in the form of monolithic integrated circuits consisting of a multi-layer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor, two resistances and two UV-erasable, programmable, read-only memories (EP-ROMs), each having a storage capacity of 64 K bits and with a total EPROM capacity of 128 K bits, two static random-access memories of C-MOS technology (C-MOS S-RAMs) each having a storage capacity of 64 K bits and with a total S-RAM storage capacity of 128 K bits, with not more than 28 connecting pins, with two quartz windows on the upper surface and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nEDH 91616 CL-30 (20)\nor\nother identification markings relating to memories complying with the abovementioned description\nex 8542.11.71\nDirect-access memory controllers of N-MOS technology (N-MOS DMA controller), in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 23×82 mm, with not more than 64 connecting pins, and bearing:\nan identification marking either consisting of one of the following combinations of figures or figures and letters or including one of those combinations:\nHD 6844\n8237\nMCM 68440\nHD 68 A 44\n8257\nMCM 68450\nHD 68 B 44\nHD 68450-4\nAM 9517 A\nHD 68450-6\nHD 68450-8\nCO 21698\nor\nother identification markings relating to N-MOS DMA controllers complying with the abovementioned description\nex 8541.11.71\nGraphic display controller (GDC) with the capacity for controlling a 256 K word 16 bit memory, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 15×52 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nPD 7220\nor\nother identification markings relating to GDCs complying with the abovementioned description\nex 8542.11.71\nNon-volatile memory in the form of a monolithic integrated circuit, consisting of a C-MOS S-RAM, with a capacity of 16 K bits and internal power supply, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 28 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nMK 48 Z 02 (B)\nor\nother identification markings relating to non-volatile memories complying with the abovementioned description\nex 8542.11.71\nMonolithic integrated circuits, consisting of eight independent elements capable of controlling the eight segments and/or characters of fluorescent or gas discharge displays, contained in a housing the exterior dimensions of which do not exceed 7×23 mm, with not more than 18 connecting pins and bearings:\nan identification marking either consisting of or including one of the following combinations of figures:\n513\n514\n534\n594\n6118\n6128\n6138\nor\nother identification markings relating to circuits complying with the abovementioned description\nex 8542.11.71\nRead-only memories (ROMs), in the form of a monolithic integrated circuit, with a storage capacity of 16 K×8 bits, with read-register and serial output control, contained in a housing the exterior dimensions of which do not exceed 50×16 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of one of the following combinations of figures or including one of those combinations:\nfrom 62000 to 62999\nor\nother identification markings relating to ROMs complying with the abovementioned description\nex 8542.11.71\nProgrammable, non-erasable read-only memories (PROMs) with a storage capacity of 4 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins or 28 contact areas and bearing:\nan identification marking either consisting of or including one of the following combinations of figures or figures and letters:\n18 S 42\n29620\n54 S 472\n74 S 472\n18 S 46\n29621\n54 S 473\n74 S 473\n18 SA 42\n29622\n54 S 474\n74 S 474\n18 SA 46\n29623\n54 S 475\n74 S 475\n29624\n54 S 476\n74 S 476\n24 S 41\n29625\n54 S 477\n74 S 477\n24 SA 41\n29626\n54 S 572\n74 S 572\n29627\n54 S 573\n74 S 573\n27 S 15\n54740\n27 S 25\n3604\n54741\n7640\n27 S 26\n3624\n7641\n27 S 27\n3625\n5605\n7642\n27 S 28\n5625\n7643\n27 S 29\n38510\n7644\n27 S 30\n6340\n7645\n27 S 31\n5340\n6341\n7646\n27 S 32\n5341\n63 S 440\n7647\n27 S 33\n53 S 440\n63 RA 441\n7648\n53 RA 441\n63 RS 441\n7649\n28 L 42\n53 RS 441\n63 S 441\n28 L 45\n53 S 441\n6348\n82 HS 137\n28 L 46\n5348\n6349\n82 HS 147\n28 P 42\n5349\n6350\n82 S 115\n28 P 45\n5350\n6351\n82 S 136\n28 R 45\n5351\n6352\n82 S 137\n28 S 4 XFD\n5352\n6353\n82 S 140\n28 SA 41\n5353\n82 S 141\n28 S 42\nHM 6641\n82 S 142\n28 SA 42\n82 S 146\n28 S 45\n7054\n82 S 147\n28 S 46\n7059\n28 SA 46\n93438\n7121\n93448\n7122\n93452\n7123\n93453\n7124\n7125\n7126\n7226\nor\nother identification markings relating to PROMs complying with the abovementioned description\nex 8542.11.71\nProgrammable, non-erasable read-only memories (PROMs) with a storage capacity of 8 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and 28 contact points and bearing:\nan identification marking either consisting of one of the following combinations of figures and letters or including one of those combinations:\n24 S 81\n3628\n74 LS 478\n82707\n24 SA 81\n74 S 2708\n82708\n24 S 86\n5380\n74 S 454\n82 HS 185\n5381\n74 S 455\n82 LS 180\n27 S 180\n5388\n74 S 478\n82 LS 181\n27 S 181\n5389\n74 S 479\n82 S 180\n27 S 185\n53 S 840\n82 S 181\n27 S 35\n53 S 841\n7608\n82 S 182\n7680\n82 S 183\n28 L 85\n54 LS 478\n7681\n82 S 184\n28 L 86\n54 S 2708\n7684\n82 S 185\n28 P 85\n54 S 454\n7685\n82 S 2708\n28 R 35\n54 S 455\n7686\n28 R 85\n54 S 478\n7687\n87 S 180\n28 S 2708\n54 S 479\n7688\n87 S 181\n28 S 85\n7689\n87 S 184\n28 S 86\n6380\n87 S 185\n28 SA 86\n6381\n77 S 180\n87 S 186\n28 S 8 XMFE\n6388\n77 S 181\n87 S 187\n6389\n77 S 184\n29623\n63 S 840\n77 S 185\n93450\n29630\n63 S 841\n77 S 186\n93451\n29631\n77 S 187\n93460\n29632\n7050\n93461\n29633\n7055\nTBPS 81 M\n93465\n29634\n7060\n93466\n29635\n93 L 450\n29636\n7127\n93 L 451\n29637\n7128\n29650\n7129\n9460\n29651\n7130\n29652\n7131\n29653\n7132\n7232\nor\nother identification markings relating to PROMs complying with the abovementioned description\nex 8542.11.71\nUV-erasable, programmable, read-only memory (EPROM) equipped with a programmable input/output system, with a storage capacity of 2 K×8 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×52 mm, with a quartz window on the upper face and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nD 8755 A\nTMP 8755 AC\nor\nother identification markings relating to memories complying with the abovementioned description\nex 8542.11.71\nElectrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 256 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×12 mm, with not more than eight connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nNMC 9306\nor\nother identification markings relating to E2PROMs complying with the abovementioned description\nex 8542.11.71\nElectrically erasable programmable, read-only memories (E2PROMs) with a storage capacity of 4 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nX 2804 A\nX 2404\nX 24 C 04\nor\nother identification markings relating to E2PROMs complying with the abovementioned description\nex 8542.11.71\nElectrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 16 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combination of figures and letters:\nX 24 C 16\nX 2816 A\n52 B 13\n52 B 13 H\nor\nother identification markings relating to E2PROMs complying with the abovementioned description\nex 8542.11.71\nElectrically erasable, programming, read-only memories (E2PROMs) with a storage capacity of 64 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including one of the following combination of figures and letters:\nX 2864 A\nMCM 2864\n52 B 33\n52 B 33 H\nor\nother identification markings relating to E2PROMs complying with the abovementioned description\nex 8542.11.71\nElectrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 128 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nX 28128 A\nor\nother identification markings relating to E2PROMs complying with the abovementioned description\nex 8542.11.71\nElectrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 256 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nX 28256 A\nor\nother identification markings relating to E2PROMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of TTL techology (TTLS-RAMs) with a storage capacity of 1 K bit, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×30 mm, with not more than 22 connecting pins and bearing:\nan identification marking either consisting of or in cluding one of the following combinations of figures and letters:\n2205\n74 LS 214\n93412\n74 LS 215\n93 L 412\n2510\n74 LS 314\n93415\n2511\n74 LS 315\n93 L 415\n74 S 207\n93422\n74 S 208\n93 L 422\n74 S 214\n93425\n74 S 314\n93 F 425\n93 L 425\nor\nother identification markings relating to TTL S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of C-MOS technology (C-MOS S-RAMs), with a storage capacity of 4 K×1 bit, a maximum access time not exceeding 70 ns and a standby mode supply current of less than 1 mA, in the form of a monolithic integrated circuit, contained in a housing the dimensions of which do not exceed 9×26 mm, with 18 connecting pins, and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\n6147\nMCM 61 L 47\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memory of C-MOS technology (C-MOS S-RAM) with a storage capacity of 2 K×8 bits and with a maximum standby power of 0,025 milliwatts at 25°C in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combination of figures and letters:\nTC 5516 A\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs) with a storage capacity of 8 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures or figures and letters.\n4008\n8104\n8108\n4118\n8112\n8114\nPD 421\n8185\n4801\nor\nother identification relating to N-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs), in the form of a monolithic integrated circuit consisting of two stacked substrate layers each with two chips, each having a storage capacity of 2 K bits and with a total storage capacity of 8 K×1 bit or 4 K×2 bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n4598601\n5121850\n5121934\n5121935\n5122148\n5123059\n5123120\n5123128\n5123129\n5123337\n5123339\nor\nother identification markings relating to N-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs) with a storage capacity of 256×4 bits, in te form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures or figures and letters:\nM 120\n8101\n8111\n2101\n21 H 01\n9101\n2102\n91 L 01\n2111\n9111\n21 H 11\n91 L 11\n2112\n9112\n21 H 12\n91 L 12\n9122\n91 L 22\nor\nother identification markings relating to N-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nStatic, random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 64 K bits in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of the following combination of figures and letters or including one of those combinations:\nTC 5564\nMB 8464\nTC 5565 C\nMCM 6164\nHM 6264 P-12\nHM 6264 P-15\n6264 LFP-15\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.71\nMonolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 256 bits superimposed bit-for-bit on a programmable, electrically erasable, read-only memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 8×24 mm, with not more than 18 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nX 2210\nX 2443\nX 2444\nor\nother identification markings relating to S-RAMs super-imposed of E2PROMs complying with the abovementioned description\nex 8542.11.71\nMonolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 1 K bit, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nX 2001\nX 2201 A\nX 2212\nor\nother identification markings relating to S-RAMs stracked on E2PROMs complying with the abovementioned description\nex 8542.11.71\nMonolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 2 K bit, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of the following combination of figures and letter: X 2002\nor\nother identification markings relating to S-RAMs stacked on E2PROMs complying with the abovementioned description\nex 8542.11.71\nMonolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 4 K bits, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of the following combination of figures and letters:\nX 2004\nor\nother identification markings relating to SRAMs stacked on E2PROMs complying with the abovementioned description\nex 8542.11.71\n\"Quasi-static' random-access memories of N-MOS (including H-MOS) technology (N-MOS quasi-static RAMs), in the form of a monolithic integrated circuit consisting of two stacked substrate layers, each with two chips, each having a storage capacity of 4 K bits and with a total storage capacity of 16 K×1 bit or 8 K×2 bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 24 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n4599766\n4599769\n4599772\n4599893\n4599767\n4599770\n4599773\n4599768\n4599771\n4599774\nor\nother identification markings relating to N-MOS quasi-static RAMs complying with the abovementioned description\nex 8542.11.71\nRandom-access memories of ECL technology (ECL-RAMs) with a storage capacity of 1 K×4 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×10 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including the following combinations of figures or figures and letters:\nPB 10474\n100474\nor\nother identification markings relating to ECL-RAMs complying with the abovementioned description\nex 8542.11.91\nSemi-custom logic array (Gate arrays) of C-MOS technology, in the form of a monolithic integrated circuit, with not less than 8,000 2-input NAND functions, contained in a housing the exterior dimensions of which do not exceed 39×39 mm, with not less than 179 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nMB 66000 VH\nor\nother identification markings relating to C-MOS logic arrays complying with the abovementioned description\nex 8542.11.91\nSingle-chip microcomputers, in the form of a monolithic integrated circuit, consisting of an arithmetical unit with a capacity of four bits plus a read-only memory (ROM) with a capacity of not less than 18 K bits and not more than 65 K bits and a random-access memory (RAM) with a capacity of not less than 512 bits and not more than 4 K bits, contained in a housing the exterior dimensions of which do not exceed 17×58 mm, with not more than 80 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nCD 3200-3299\nTP 0310-03299\nHD 38800\nTP 0450-04599\nHD 38820\nTMC 0270-0279\nTP 0480-04899\nHD 44796\nTMC 0500-0599\nTP 0500-05999\nHD 44800\nTMC 0980-0989\nHD 44801\nTMC 1500-1599\nHD 44820\nTMC 1980-1999\nHD 44840\nHD 44860\nor\nother identification markings relating to single-chip microcomputers complying with the abovementioned description\nex 8542.11.91\nCentral processing unit of N-MOS (including H-MOS) technology (N-MOS CPU), in the form of a monolithic integrated circuit consisting of 16×16 bit service memory, a 16×20 bit service memory, a 32×32 bit service memory, an 8×8 bit service memory, a 16 bit register, two 20 bit registers, an 8 bit register, one 12 bit register, a 5 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nLSI-604041855\nor\nother identification markings relating to N-MOS central processing units complying with the abovementioned description\nex 8542.11.91\nContention resolving local area network (LAN) controllers, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 63×16 mm, with not more than 48 connecting pins, and bearing:\nan identification marking either consisting of the following combinations of figures or figures and letters or including one of those combinations:\nMCM 68590\nAM 7990\n8001\n8003\n82586\nor\nother identification markings relating to contention resolving local area network controllers complying with the abovementioned description\nex 8542.11.91\nHard-disc controllers of N-MOS (including H-MOS) technology (N-MOS HDCs), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×53 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nWD 1010\nPD 7261\nor\nother identification markings relating to N-MOS HDCs complying with the abovementioned description\nex 8542.11.91\nMulti-protocol communication controller of MOS technology (MOS-MPCC) for the transmission and receiving of data specialized in the synchronous mode, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 44 connecting pins or contact areas and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n2652\n16456\n68652\n8273\n8274\nor\nother identification markings relating to multi-protocol communication controllers (MOS-MPCC) complying with the abovementioned description\nex 8542.11.91\nArithmetic-logic units of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 32 bit register, one 24 bit register, one 4 bit register, twelve 1 bit registers, two 16×24 bit service memories, one logic network performing arithmetic and logic operations, decodifying logic, an error detection and management logic, one 8 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:\nthe identification marking:\nALU 0486\nor\nother identification markings relating to arithmetic-logic units complying with the abovementioned description\nex 8542.11.91\nLogic control circuits of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 7 bit register, three timers, one multiplexer sequential and combining networks intended to perform control operations, decodifying logic, error detection and managment logic and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:\nthe identification marking:\nMIC 0482\nor\nother identification markings relating to logic control circuits complying with the abovementioned description\nex 8542.11.91\nLogic circuit of N-MOS (including H-MOS) technology (N-MOS LC) serving as a clock generator for central process unit, main memory and input/output interfaces, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:\nan identification marking either consisting of or including the following combination figures and letters:\nH 108982 (MCC)\nor\nother identification markings relating to N-MOS logic circuits (N-MOS LCs) complying with the abovementioned description\nex 8542.11.91\nSequence control circuits of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 32 bit register, three 16 bit registers, one 16×16 bit service memory, one 7×17 bit last-in first-out (LIFO) memory, one adder circuit, decodifying logic, priority logic, error detection and management logic, one 16 bit multiplexer, one 8 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:\nthe identification marking:\nCSS 0484\nor\nother identification markings relating to sequence control circuits complying with the abovementioned description\nex 8542.11.91\nError correction and detection unit (ECDU) of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×62 mm, with not more than 48 connecting pins and bearing:\nan identification marking either consisting of or including the following combinations of figures and letters:\n2960\n74 F 630\n74 F 631\nDP 8400\n74 LS 630\n74 LS 631\nor\nother identification markings relating to error correction and detection units (ECDUs) complying with the abovementioned description\nex 8542.11.91\nError detection and correction circuit of N-MOS (including H-MOS) technology capable of detecting and correcting single bit errors and detecting all double bit errors, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 contact areas and bearing:\nan identification marking either consisting of or including the following combination of figures:\n8206\nor\nother identification markings relating to N-MOS error detection and correction circuits complying with the abovementioned description\nex 8542.11.91\nBurst error processor (BEP) or N-MOS (including H-MOS) technology for detecting and correcting multiple errors derived from a line of magnetic discs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nZ 8065\nAM 9520\nAM 9521\nor\nany other identification marking relating to N-MOS burst error processor complying with the abovementioned description\nex 8542.11.91\nElectronic control circuit of bipolar technology in the form of a monolithic integrated circuit for the control of dynamic random-access memories (D-RAMs), capable of multiplexing address and generating timing, contained in a housing the exterior dimensions of which do not exceed 17×62 mm, with not more than 48 conncting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nDP 8408\nDP 8409\nMB 1422\nor\nother identification markings relating to electronic control circuits complying with the abovementioned description\nex 8542.11.91\nEnhanced programmable communications interface (EPCI), in the form of a monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 16×38 mm, with not more than 28 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures:\n2661\nor\nother identification markings relating to EPCIs complying with the abovementioned description\nex 8542.11.91\nSerial interfaces, capable of implementing the data stream encoding, decoding and associated control functions for a local area network, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 24 connecting pins and bearing:\nan identification marking either consisting of the following combination of figures or figures and letters or one of those combinations:\nAM 7991\n8002\n8023\n82501\nor\nother identification markings relating to serial interface devices complying with the abovementioned description\nex 8542.11.91\nStation digital interface circuit for parallel/serial or serial/parallel conversion of digital signals in telephone sets, of C-MOS technology (C-MOS STID), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nWCC 295 G\nor\nother identification markings referring to station interface digital circuits with the abovementioned description\nex 8542.11.91\nTransceivers with four channels (Quad bus) of ALP Schottky technology with on-chip D type registers and internal ODD 4 bit parity generator/checker, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 9×28 mm, with not more than 20 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nAM 2907\nor\nother identification markings relating to transceivers (Quad bus) complying with the abovementioned description\nex 8542.11.91\nDemodulator/tone decoder of bipolar technology for frequency decoding, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 14 connecting pins and bearing:\nan identification marking consisting of or including one of the following combination of figures and letters:\nXR 211\nor\nother identification markings relating to demodulator tone decoders complying with the abovementioned description\nex 8542.11.91\nC-MOS clock circuits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with more than 16 connecting pins, and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nHI 2060\nHI 2065\nMSM 5537\nT 3605\nor\nother identification markings relating to clock circuits complying with the abovementioned description\nfor the production of automatic time-switches, instrument panel clocks and either of a similar type for motor vehicles (a)\nex 8542.11.91\nC-MOS clock circuits, operating from a single 1,5 V power supply, with a liquid crystal display (LCD) driver, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×21 mm, with not more than 56 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nTC 8219 AT\nor\nother identification markings relating to C-MOS clock circuits complying with the abovementioned description\nex 8542.11.91\nP-MOS 12/24-hour clock circuits, incorporating an elapsed time facility, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 54×14 mm, with not more than 42 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nMM 53124\nLM 8363\nor\nother identification markings relating to clock circuits complying with the abovementioned description\nex 8542.11.91\nAmplifier, in the form of a monolithic integrated analogue circuit, contained in a housing the dimensions of which do not exceed 2×4×4 mm, with not more than 10 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combination of figures and letters:\nV 35\nC 05\nor\nother identification markings relating to amplifiers complying with the abovementioned description\nThis amplifier is for the manufacture of products falling within subheading 90.19 B I\nex 8542.11.91\nFour-line drivers of advanced, low-power Schottky technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 20×7 mm, with not more than 16 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nAM 26LS29\nAM 26LS31\nSN 75172\nSH 75174\nor\nother identification markings relating to four-line drivers of ALPS technology complying with the abovementioned description\nex 8542.11.75\n16 bit microprocessor of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 67×24 mm, with not more than 52 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nAM 29116\nor\nother identification markings relating to microprocessors complying with the abovementioned description\nex 8542.11.91\nNumeric processor extension units of N-MOS (including H-MOS) technology (N-MOS NPX) containing not more than 14 registers, in the form of a monolithic integrated circuit, contained in a package the exterior dimensions of which do not exceed 15×52 mm, with not more than 40 connecting pins and bearing:\nan identification marking consisting of or including one of the following combination of figures:\n8087-3\n8087-2\n80287\nor\nother identification markings, relating to N-MOS NPXs complying with the abovementioned description\nex 8542.11.91\nFloppy-disc data separator (FDDS), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 27×8 mm, with not more than 20 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nFDC 9216\nFDC 9126-B\nWD 9216-00\nWD 9216-01\nFDC 9229 T\nFDC 9229 BT\nor\nother identification markings relating to FDDS, complying with the abovementioned description\nex 8542.11.99\nC-MOS-phoneme speech synthesizer, with a supply current of less than 10 mA, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nSC 01\nSSI 263\nor\nother identification markings relating to phoneme speech synthesizers complying with the abovementioned description\nex 8542.20.00\nTriple video digital to analogue converter (VDAC), each channel having a capacity of not more than 8 bits with a maximum conversion time of not more than 25 nano-seconds, in the form of a hybrid integrated circuit whether or not incorporating three random access memories (RAMs) each with a storage capacity of not more than 2 K bits, contained in a housing the exterior of which do not exceed 54×62 mm, with not more than 61 connecting pins and bearing:\nan identification marking consisting of one of the following combinations of letters and figures:\nVDAC 444 TD\nRGB DAC 4 T\nRGB DAC 8 E\nRGB DAC 8 T\nor\nother identification markings relating to triple VDACs complying with the abovementioned description\nex 8542.11.71\nElectronically adjustable differential amplifiers for at least the full range of signals from 0 to not less than 400 MHz in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 11×11 mm, with not more than 16 connecting pins, and bearing:\nan identification marking consisting of or containing the following combination of figures:\n0078-10\nor\nother identification markings relating to amplifiers complying with the abovementioned description\nex 8542.11.91\nStatic, random-access memories of bipolar technology (bipolar SRAMs), in the form of a monolithic integrated circuit and with a storage capacity of 64×9 bits, contained in a housing the exterior dimensions of which do not exceed 15×40 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\n82 S 09\nor\nother identification markings relating to bipolar SRAMs complying with the abovementioned description\nex 8542.11.91\n8 bit (octal) dynamic memory bipolar driver in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 20 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nAM 2965\nAM 2966\nor\nother identification markings relating to dynamic memory bipolar drivers complying with the above description\nex 8542.11.91\nBus interface circuits for bipolar technology with 9 or 10 bit registers, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 9×34 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of numbers and letters:\nAM 28821\nAM 29843\nAM 29823\nAM 29844\nAM 29824\nor\nother identification markings relating to BUS interface circuits which comply with the above description\nex 8542.11.91\nMultiple bus interface circuit (Multiple Bus Buffer) of low power Schottky technology for interfacing the error correction and detection unit system data bus and dynamic random access memory (D-RAM), in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 8×33 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including the following combination of numbers and letters:\nAM 2961\nor\nother identification markings relating to error correction multiple bus buffers which comply with the above description\nex 8542.11.91\nStatus and shift control unit of bipolar technology in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×57 mm with not more than 42 connecting pins, and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nAM 2904\nor\nother identification markings relating to status and shift control units complying with the above description\nex 8542.11.91\nAmplifier, in the form of a monolithic integrated analog circuit the exterior dimensions of which do not exceed 3×3 mm for use in the manufacture of products falling within subheading 90.19 B I (a)\nex 8542.11.91\nText-co-processor, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins, and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nC 82730\nor\nother identification markings relating to text-co-processors complying with the above description\nex 8542.11.91\nSingle-chip-microcomputer, in the form of a monolithic integrated circuit, consisting of an arithmetic-logic unit with a capacity of 8 bits plus an electronic, programmable, read-only memory (EPROM) UV erasable with a capacity of 32 K bits and a random access memory (RAM) with a capacity of 1 K bit, two 16 bit counters, contained in a housing the exterior dimensions of which do not exceed 15×20 mm, with a quartz window and not more than 40 connecting pins and bearing:\nan identification marking either consisting of the following combination of figures or including this combination:\n8751\nor\nother identification markings relating to single-chip-microcomputers which conform to the foregoing description\nex 8542.11.91\nSingle-chip microcomputers in C-MOS technology, in the form of a monolithic integrated circuit consisting of an ALU with a capacity of 32 bits plus a ROM with a capacity of 24 K bits and a RAM with a capacity of 2 K bits, contained in a housing the exterior dimensions of which are not less than 30×30 mm, with a minimum of 88 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nMB 8764\nor\nother identification markings relating to single-chip microcomputers complying with the abovementioned description\nex 8542.11.91\nSubscriber line interface circuit (SLIC) with direct internal relay drive, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures or figures and letters:\n5502\nICME 00155/RIFA (PBL) 3735\nor\nother identification markings relating to SLICs complying with the abovementioned description\nex 8542.11.91\nInput output circuit of N-MOS (including H-MOS) technology for data control equipped with a timing control with a static random access memory (S-RAM) with a capacity of 128×8 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of one of the following combinations of figures or letters and figures or including one of those combinations:\n6532\nCO 10750\nor\nother identification markings relating to input output control circuits complying with the abovementioned description\nex 8542.11.91\n4-channel drive circuit for stepping motor, of bipolar technology, with incorporated diodes, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 6×20 mm, with 16 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nHA 13007\n75437 A\nor\nother identification markings relating to motor drive circuits complying with the abovementioned description\nex 8542.11.91\nAnalog/digital monolithic integrated circuit used to control brushless motors, maintaining them at a constant speed, contained in a housing the exterior dimensions of which do not exceed 6×25 mm, with 18 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nMGA 3015 A\nor\nother identification markings relating to integrated circuits complying with the abovementioned description\nex 8542.11.91\nAnalog/digital monolithic integrated circuit of bipolar technology for interface signals between the peripheral hard-disk memory unit and the central unit, contained in a housing the dimensions of which do not exceed 15×50 mm, with not more than 40 connecting pins, and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nAD 581 C\nor\nother identifications markings relating to integrated circuits complying with the abovementioned description\nex 8542.11.91\nVoltage-multiplier circuit for operating stepping motors, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 6×24 mm, with not more than 20 connecting pins, and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nP 20 A579\nor\nother identification markings relating to voltage-multiplier circuits complying with the above description\nex 8542.11.91\nMemory management unit of N-MOS (including H-MOS) technology (N-MOS MMU) with a maximum addressing capacity of 16 M bytes, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 25×82 mm, with not more than 64 connecting pins or 68 contact areas and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\n68451 L 6\n68451 L 8\n68451 L 10\n68451 ZBL 6\n68451 ZBL 8\n68451 ZBL 10\nor\nother identification markings relating to N-MOS MMUs complying with the above description\nex 8542.11.91\nElectronic circuit of advanced low power Schottky (ALPS) technology for the asynchronous control of signal lines (bus) and the conversion of a local bus into a multiplexed bus (BAM) in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 37×13 mm, with not more than 28 connecting pins and bearing:\nthe identification marking:\n68452\nor\nother identification markings relating to ALPS BAMs conforming to the foregoing description\nex 8542.11.91\nCathode-ray tube controller (CRTC) of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 62×16 mm, with not more than 48 connecting pins and bearing:\nan identification marking either consisting of or including the following combinations of figures and letters:\nAM 8052\nD 8275 H\nP 8275 H\nor\nother identification markings relating to CRTCs complying with the abovementioned description\nex 8542.11.91\nDisplay controller and character generator (DCCG) for liquid crystal dot matrix display system in the form of a monolithic integrated circuit of C-MOS technology contained in a housing the exterior dimensions of which do not exceed 20×26 mm, with not more than 60 connecting pins, and bearing:\nan identification marking consisting of the following combination of figures and letters:\nHD 61830\nor\nother identification markings relating to C-MOS Display Controller and character generators complying with the abovementioned description\nex 8542.20.00\nVideo digital to analog converter (VDAC) with a maximum conversion time of 10 nanoseconds, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 20×35 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nVDAC 0405 H\nVDAC 0605 H\nVDAC 0805 H\nor\nother identification markings relating to VDACs complying with the abovementioned description\nex 8542.11.75\nInput/output management microprocessor of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit the exterior dimensions of which do not exceed 17×53 mm, with not more than 40 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\n8089\nor\nother identification markings relating to input/output management microprocessors complying with the abovementioned description\nex 8542.11.91\nInterpolation pulse generator of C-MOS technology for controlling geometrical functions, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nKM 3701\nor\nother identification markings relating to interpolation modules complying with the abovementioned description\nex 8542.11.71\nStatic, random access memory of C-MOS technology (C-MOS-S-RAM) with a storage capacity of 32 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nTC 5532\nor\nother identifying marking relating to C-MOS-S-RAM complying with the abovementioned description\nex 8542.11.91\nController for servo-devices of C-MOS technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×54 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nKM 3702\nor\nother identification markings relating to controllers complying with the abovementioned description\nex 8542.11.91\nFunction generator of bipolar technology for the generation of variable waveforms, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 16 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures and letters:\nXR 2206\nXR 8038\nor\nother identification markings relating to function generators complying with the abovementioned description\nex 8542.11.91\nVideo amplifier of bipolar technology in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×17 mm, with not more than 44 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n702\n703\nor\nother identification markings relating to video amplifiers complying with the abovementioned description\nfor use in the manufacture of portable colour television cameras\nex 8542.11.91\nAmplifier, of bipolar technology for the amplification of either read or write signals of floppy discs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 11×29 mm, with not more than 22 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nXR 2247\nXR 3470\nor\nother identification markings relating to amplifiers complying with the abovementioned description\nex 8542.11.91\nAperture and colour temperature balance controller of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×17 mm, with not more than 44 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures:\n704\nor\nother identification markings relating to devices complying with the abovementioned description\nfor use in the manufacture of portable colour television cameras (a)\nex 8542.11.91\nImpulse generator in C-MOS technology, in the form of a monolithic integrated digital circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:\nan identification marking consisting of or including one of the following combination of figures:\n705\n706\nor\nother identification markings relating to impulse generators complying with the abovementioned description\nfor use in the manufacture of portable colour television cameras (a)\nex 8542.11.91\nStatic random access memories of bipolar technology (bipolar S-RAMs) in the form of a monolithic integrated circuit consisting of a substrate layer on which are mounted either 1 or 2 chips each having a storage capacity of 1 K bit, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures:\n770639\n770823\n5120360\n7379769\nor\nother identification markings relating to bipolar S-RAMs complying with the abovementioned description\nex 8542.11.91\nStatic memories consisting of two stacked substrate layers with one or two static random access memories of bipolar technology (bipolarS-RAMS) in the form of monolithic integrated circuits, each with a storage capacity of 1 K bits and with a maximum storage of 4 K bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures:\n770965\n4599497\n7379442\nor\nother identification markings relating to static memories complying with the abovementioned description\nex 8542.11.91\nProgrammable digital signal synthesizer of C-MOS technology with 32 frequency generators to generate 8 notes each and a simultaneous output of up to 160 notes in the form of a monolithic integrated circuit contained in a housing, the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins or contact areas. The housing bears:\nMEG\nor\nother identification markings relating to digital synthesizers complying with the abovementioned description\nex 8542.11.91\nRepeater circuit, of bipolar technology for the regeneration of pulse code-modulated signals, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 16 connecting pins and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nXR C 240\nor\nother identification markings relating to repeater circuits complying with the abovementioned description\nex 8542.11.91\nDynamic random access memory controller of N-MOS (including H-MOS) technology (N-MOS D-RAM controller) capable of multiplexing addresses and generating timing, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×62 mm, with not more than 48 connecting pins or 52 contact areas, and bearing:\nan identification marking consisting of or including the following combination of figures and letters:\nC 8208\nor\nother identification markings relating to N-MOS D-RAM controllers complying with the abovementioned description\nex 8542.11.91\nC-MOS clock/calendar circuit, incorporating a quartz crystal oscillator, independent timer recorders and a timer, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 7×20 mm with not more than 16 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nMM 58174A\n58274\nor\nother identification markings relating to clock/calendar circuits complying with the abovementioned description\nex 8542.11.91\nProgrammable asynchronous communication element circuit in N-MOS (including H-MOS) technology, for the asynchronous transmission and reception of data, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nINS 8250\nWD 8250\nor\nother identification markings relating to ACE circuits complying with the abovementioned description\nex 8542.11.99\nEncoder/decoder circuit using the “MANCHESTER” (MED) code for the transmission or retransmission of serial data, of C-MOS technology and in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 20 pins and bearing:\nan identification marking consisting or including the following combination of figures and letters:\nHD 6409\nor\nother identification markings relating to circuits complying with the abovementioned description\nex 8542.11.91\nUV-erasable programmable read-only memories (EPROMs) in the form of a monolithic integrated circuit with a storage capacity of 512 K bits, contained in a housing the exterior dimensions of which do not exceed 20×42 mm, with a quartz window on the upper surface. The housing bears:\nan identification marking consisting or including the following combination of figures and letters:\nAM 27512\nor\nother identification markings relating to EPROMs complying with the abovementioned description\nex 8542.11.99\nTTL Logic modules in bipolar technology, with not more than six logic functions independent of each other and not interconnected, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×34 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures or letters:\nSH 767 369\nSH 998 088\nor\nanother identification marking relating to logic modules as described above\nex 8542.11.99\n6-Channel monolithic integrated circuit (Read/write data processor circuit) for the amplification and conversion of read signals and conversion of write signals for hard disc drives, contained in a housing the exterior dimensions of which do not exceed 19×38 mm, with not more than 28 connecting pins or contact areas and bearing:\nan identification marking consisting of or including the following combination of letters and figures:\nSSI 540\nor\nother identification markings relating to integrated circuits complying with the abovementioned description\nex 8542.11.99\n8-Channel control circuit for maintaining a constant electronmagnetic traction force with incorporated diodes and a storage capacity of 8 bits, in the form of a monolithic integrated circuit, of C-MOS technology contained in a housing the exterior dimensions of which do not exceed 9×28 mm, with not more than 22 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nUCN 5801\nor\nother identification markings relating to control circuits complying with the abovementioned description\nex 8542.11.99\n4-Channel control circuit for maintaining a constant electromagnetic traction force with incorporated diodes and a storage capacity of 4 bits, in the form of a monolithic integrated circuit of C-MOS technology, contained in a housing the exterior dimensions of which do not exceed 7×22 mm, with not more than 16 connecting pins and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nUCN 5813\nor\nother identification markings relating to control circuits complying with the abovementioned description\nex 8542.11.99\nSix-channel monolithic integrated circuit for the generation of read/write signals for hard disc drives, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 28 connecting pins and bearing:\nan identification marking consisting of or including the following combination of letters and figures:\nSSI 117\nor\nother identification markings relating to integrated circuits complying with the abovementioned description\nex 8542.19.90\nProgrammable non-erasable read-only memories (PROMS) with a storage capacity of 16 K bits, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 39×17 mm, with not more than 32 connecting pins or contact areas and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\n27 PS 191 A\n7 C 245\n7 C 292\n29683\n7 C 291\nHM 6616\nor\nother identification markings relating to PROMS complying with the abovementioned description\nex 8542.11.99\nHard Disc Data Separator (HDDS) of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 8×33 mm, with not more than 24 connecting pins and bearing:\nan identification marking consisting of or including one of the following combinations of figures and letters:\nDP 8460-2\nDP 8460-3\nDP 8460-4\nor\nother identification markings relating to devices complying with the abovementioned description\nex 8542.11.99\nControl and interface circuit for central processor (CPU-Controller) of HC-MOS technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:\nan identification marking consisting of or including the following combinations of letters and figures:\nFE 2000\nLIA0392\nor\nother identification markings relating to control and interfacing circuits complying with the abovementioned description\nex 8542.20.00\nAmplifiers for a full range of signals from 0 to 60 KHz in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 6×13×26 mm, with not more than 18 connecting pins and a leakage of not more than 0.3μA and bearing:\nan identification marking either consisting of or including the following combination of figures and letters:\nISO 100\nor\nother identification markings relating to amplifiers complying with the abovementioned description, for use in the manufacture of telephone exchanges\nex 8542.11.91\nLight-emitting diode (LED) made from a gallium-based semiconductor compound contained in a housing the exterior dimensions of which do not exceed 20×21 mm, with 2 connecting pins and bearing:\nan identification marking consisting of or including one of the following identification markings:\nLT 9305\nLY 9306\nSLF 209\nSLF 909\nor\nother identification markings relating to LEDs, complying with the abovementioned description: for use in the manufacture of radio broadcast receivers and sound recorders or reproducers (a)\nex 8542.11.91\nSingle-chip microcomputer of C-MOS technology, in the form of a monolithic integrated circuit, consisting of an arithmetical logic unit (ALU) with an organization of 4 bits, a read-only memory (ROM) with a storage capacity of 2 K×8 bits, a dual-tone, multi-frequency (DTMF) generator, a random access memory (RAM), with a storage capacity of 1 K bit, a random access memory (RAM) with a storage capacity of 512 bits and two 12-bit counters, contained in a housing the exterior dimensions of which do not exceed 15×40 mm, with not more than 42 connecting pins and bearing:\nan identification marking consisting of the following combination of figures and letters:\nT 6978\nor\nother identification markings relating to single-chip microcomputers complying with the abovementioned description\nex 8542.11.91\nAsynchronous First-in First-out (FIFO) memories of C-MOS technology in the form of a monolithic integrated circuit with a capacity of 64×4 bits, or 64×5 bits, contained in a housing the exterior dimensions of which do not exceed 11×24 mm with not more than 18 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures or figures and letters:\nCY7C401\nCY7C402\nCY7C403\nCY7C404\nCY 3341\nor\nother identification markings relating to asynchronous First-in First-out memories complying with the abovementioned description\nex 8542.11.91\nStatic Random Access Memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 16 K bits and an access time of not more than 45 ns, contained in a housing the exterior dimensions of which do not exceed 9×27 mm, with not more than 20 connecting pins or contact areas, and bearing:\nan identification marking either consisting of or containing the following combination of figures and letters:\nCY7C168\nCY7C169\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.91\nStatic Random Access Memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 16×4 bits, an access time not exceeding 35 ns, contained in a housing the exterior dimensions of which do not exceed 9×21 mm, with not more than 16 connecting pins and bearing:\nan identification marking either consisting of or containing one of the following combinations of figures and letters:\nCY7C189\nCY7C190\nCY74S189\nCY54S189\nCY27S03\nC727S07\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8542.11.91\nStatic random access memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 256×4 bits and an access time not exceeding 60 ns, contained in a housing the exterior dimensions of which do not exceed 12×29 mm, with not more than 22 connecting pins and bearing:\nan identification marking either consisting of or including one of the following combinations of figures or figures and letters:\nCY7C122\nCY93422/93L422\nor\nother identification markings relating to C-MOS S-RAMs complying with the abovementioned description\nex 8540.91.00\nTungsten elements coated with insulating material, grids and cathodes for use in the manufacture of electron guns for monochrome cathode-ray tubes\nex 8543.80.90\nElectromagnetic displays consisting of seven electromagnetic coils, which by means of the residual magnesium in the stators provide indefinite memory, and seven pivoting light-reflecting segments each of which is attached to a bar magnet. The display is contained in a housing the exterior dimensions of which do not exceed 28×36×50 mm\nex 8543.80.90\nPortable machines for reading and writing Braille with tactile read-out and magnetic tape cassette recording systems, microphone and speaker, equipped with a standard electromechanical Braille typewriter keyboard and an electromechanical Braille read-out unit with 20 characters, all contained in a case whose exterior dimensions do not exceed 24×36×11 cm\nex 9001.90.90\nOctagonal Fresnel lens of acrylic resin unmounted, for use in overhead projectors\nex 90.01 B\nMaterial consisting of a polarizing film, supported on one or both sides by transparent material\nex 9001.10.90\nImage reversers made up from an assembly of optical fibres\nex 9001.10.90\nImage reversers made up from an assembly of optical fibres\nex 9021.30.90\nHeart valves and parts thereof\nex 9021.30.90\nVascular prostheses of which the largest opening has an internal diameter not exceeding 8 mm\nex 9021.30.90\nVascular prostheses incorporating a tubular carrier made of yarns enclosed in animal collagen\nex 9021.90.90\nAssembly consisting of a printed circuit on which is mounted one quartz oscillator, at least one watch circuit and at least one capacitor, or a thickness not exceeding 5 mm for the manufacture of products falling within Chapter 91\nex 9010.90.00 and ex 9114.90.00\nAssembly consisting of a printed circuit on which is mounted a watch circuit, with a thickness not exceeding 5 mm, for the manufacture of products falling within Chapter 91\nex 9021.90.10\nReceivers of hearing aids, contained in a housing whose external dimensions excluding connecting points do not exceed 5×6×8 mm\nex 9021.90.90\nReading appliances for the blind, in which a miniature camera using photo-transistors transmits letters onto a scanning board with piezo-electric pencils, and their parts and accessories\nex 9608.91.00\nNon-fibrous plastic pen-tips with an internal channel\nex 9613.90.00\nFlint wheels, whether or not with guard wheels, for use in the manufacture of non-refillable gas-fuelled pocket lighters\nex 9613.90.00\nPiezo-electric ignition mechanism",
  "extent": null,
  "status": null,
  "version": "current",
  "annotations": [],
  "outstanding_effects": [],
  "provenance": {
    "source": "legislation.gov.uk",
    "source_url": "https://www.legislation.gov.uk/uksi/1987/2183/schedule/3",
    "retrieved_at": "2026-10-29T16:14:45.304066+00:00"
  },
  "licence": "Open Government Licence v3.0",
  "licence_url": "https://www.nationalarchives.gov.uk/doc/open-government-licence/version/3/",
  "attribution": "Contains public sector information licensed under the Open Government Licence v3.0. Source: legislation.gov.uk, The National Archives."
}