Schedule 3 TOTAL EXEMPTIONS FROM CUSTOMS DUTIES
| Combined Nomenclature Code: | Description of Goods |
|---|---|
| (1) | (2) |
| ex 0302.70.00 and ex 0303.80.00 | Hard fish roes, fresh, chilled or frozen |
| ex 0303.79.99 | Red snapper (Lutjanus purpureus) |
| ex 0303.79.99 | Sturgeons, fresh, chilled or frozen, whole, headless or in pieces, intended for processing (1)(2) |
| ex 0303.80.00 | Soft roes, frozen, intended for the manufacture of deoxyribonucleic acid (DNA)(1) |
| ex 0305.20.00 | Hard fish roes, salted or in brine |
| ex 0306.19.90 and ex 0306.29.90 | Krill for processing (1) |
| ex 0711.90.50 | Mushrooms, excluding cultivated mushrooms within the meaning of subheading 0709.51.10, in salted or sulphur water, or to which other substances ensuring their temporary preservation have been added, but not specially for immediate consumption |
| ex 0712.30.00 | Mushrooms, excluding cultivated mushrooms within the meaning of subheading 0709.51.10, dried, dehydrated or evaporated, whole or in identifiable slices or pieces, intended for treatment other than simple repacking for retail sale (1)(3) |
| ex 0713.33.90 | Beans, white, dried, of the species Phaseolus vulgaris, of which not more than 2% by weight are retained by a screen with apertures of 8mm in diameter |
| ex 0804.10.00 | Dates, fresh or dried, intended for the processing industry, other than for the production of alcohol (1) |
| ex 0804.10.00 | Dates, fresh or dried, for packing for retail sale into immediate packings of a net capacity not exceeding 11 kg (1) |
| ex 0810.40.50 | Large American cranberries, fresh (Vaccinium macrocarpum) |
| ex 0810.90.90 | Rose hips, fresh |
| ex 0811.90.50, ex 0811.90.70 and ex 0811.90.90 | Fruit of the genus Vaccinium, whether or not cooked, in frozen state, not containing added sugar |
| ex 0811.90.90 | Rose hips, whether or not cooked, in frozen state not containing added sugar |
| ex 0811.90.90 | Dates, frozen, in immediate packings of a net capacity of 5 kg or more, not intended for the production of alcohol (1) |
| ex 1302.14.00 | Extract of dewaxed pyrethrum |
| ex 1604.11.00 and ex 1604.20.10 | Salmon for the processing industry for manufacture into pastes or spreads (1) |
| ex 1604.30.90 | Hard fish roes, washed, cleaned of adherent organs and simply salted or in brine |
| ex 1605.10.00 | |
| Crabs of the species “King” (Paralithodes camchaticus), “Hanasaki” (Paralithodes brevipes), “Kegani” (Erimacrus isenbecki), “Queen” and “Snow” (Chionoecetes spp.), “Red” (Geryon quinquedens), “Rough stone” (Neolithides asperrimus), Lithodes antarctica, “Mud” (Scylla serrata), “Blue” (Portunus spp.), simply boiled in water and shelled, whether or not frozen, in immediate packings of a net capacity of 2 kg or more | |
| ex 2309.90.10 | Fish or marine mammal solubles |
| ex 2710.00.59 | Mixture of hydrocarbons, consisting of 85% or more of linear paraffins by weight, with chain lengths of eight to 16 carbon atoms, and of not more than 13% of alkylbenzenes by weight, with linear chains of 10 to 12 carbon atoms |
| ex 2712.20.00 | Synthetic paraffin wax having a molecular weight of not less than 460 and not more than 1,560 |
| ex 2712.90.90 | I-Alkenes containing C 18 to C 30 carbon chains |
| ex 2805.30.10 | Alloys of cerium and other rare earth metals containing not less than 47% by weight of cerium |
| ex 2819.90.00 | Chromium dioxide |
| ex 2835.26.00 | Pentacalcium hydroxide tris(orthophosphate) for use in non-ferrous metallurgy (1) |
| ex 2845.10.00 and ex 2845.90.10 | Deuterium, deuterium oxide (heavy water) and other compounds of deuterium; hydrogen and compounds thereof enriched in deuterium, mixtures and solutions containing these products (Euratom) |
| ex 2903.30.39 | Dibromomethane |
| ex 2905.19.10 | Potassium—tert-butoxide |
| ex 2905.39.90 | Butane-1,3-diol |
| ex 2905.39.90 | 2,4,7,9-Tetramethyldec-5-yne-4,7-diol |
| ex 2905.39.90 | Hexane-1,6-diol |
| ex 2906.11.00 | Menthol |
| ex 2916.19.90 | Methacryloyl chloride |
| ex 2916.19.90 | Butyl perchlorocrotonate |
| ex 2917.39.90 | Tetrabromophtalic anhydride |
| ex 2917.39.90 | Benzene-1,2,4-tricarboxylic acid |
| ex 2917.39.90 | Benzene-1,2,4-tricarboxylic acid 1,2-anhydride |
| ex 2917.39.90 | Benzene-1,2,4-tricarbonyl trichloride |
| ex 2917.39.90 | 4-Methylphtalic anhydride |
| ex 2921.59.00 | m-Phenylenebis(methylamine) |
| ex 2922.29.00 | Dobutamine (INN) and its salts |
| ex 2926.90.90 | (−)-N-(alpha-Cyano-4-hydroxy-3-methoxy—alpha-methylphenethyl)-acetamide |
| ex 2926.90.90 | 2-(3-Phenoxyphenyl)propiononitrile |
| ex 2929.10.00 | Methylenedicyclohexyl di-isocyanate, mixed isomers |
| ex 2929.10.00 | p-Phenylene diisocyanate |
| ex 2929.10.00 | trans-(Cyclohex-1,4-ylene diisocyanate), for the production of thermoplastic polyurethane elastomers (1) |
| ex 2929.10.00 | 3-3'-Dimethylbiphenyl-4-4'-diyldiisocyanate |
| ex 2929.90.00 | 0,0-Bis(4—tert-butylphenyl)—N-cyclohexylphosphoramidothioate |
| ex 2939.30.00 | Caffeine and its salts |
| ex 2940.00.90 | Ribose |
| ex 2940.00.90 | Sucrose benzoate, having a saponification equivalent of not more than 175 |
| ex 3208.90.10 and ex 3909.50.00 | Polyurethane of 2,2'-(tert-butylimino)diethanol and 4,4'-methylenedicyclohexyl di-isocyanate dissolved in N,N-dimethylacetamide, with a polymer content of not less than 48% by weight |
| ex 3208.90.10 ex 3911.90.90 | Copolymer of p-cresol and divinylbenzene, dissolved in N,N-dimethylacetamide, with a polymer content of not less than 48% by weight |
| ex 3505.10.50 | 0-(2-hydroxyethyl)amylopectin hydrolysate |
| ex 3901.20.00 | Polyethylene containing not less than 35% and not more than 45% by weight of mica. |
| ex 3901.20.00 | Polyethylene, in one of the forms mentioned in note 6 (b) to Chapter 39, having a density of not less than 0,958 g/cm3 at 23°C and containing by weight not more than:
for the manufacture of chlorosulphonated polyethylene (a) |
| ex 3901.20.00 | Polyethylene, in one of the forms mentioned in note 6 (b) to Chapter 39, having a density of not less than 0,945 and not more than 0,985 g/cm3 for the manufacture of typewriter ribbon or similar ribbon (a) |
| ex 3901.90.00 | Ionomer resin consisting of a salt of a copolymer of ethylene and methacrylic acid |
| ex 3901.90.00 | Ionomer resin consisting of a salt of a terpolymer of ethylene, isobutyl acrylate and methacrylic acid |
| ex 3901.90.00 | Copolymers of ethylene with acrylic acid, or with methacrylic acid, containing not less than 16% and not more than 30% of acrylic acid or methacrylic acid or methacrylic acid by weight, in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3901.90.00 and ex 3902.90.00 | An A-B-A block copolymer of polystyrene, ethylene-butylene copolymer and polystyrene, containing not more than 35% by weight of styrene, in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3902.90.00 | Poly(1-ethylethylene) (polybutene-1) in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3903.90.00 | Brominated polystyrene containing not less than 58% and not more than 71% by weight of bromine, in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3903.90.00 | Copolymer, entirely of maleic anhydride and styrene, whether or not containing a styrene-butadiene block copolymer in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3903.90.00 and ex 3921.11.00 | Copolymers, solely of allyl alcohol with styrene, which have an acetyl value of not less than 175 |
| ex 3904.40.00 | Copolymers of vinyl chloride with vinyl acetate and vinyl alcohol, containing by weight not less than 87% and not more than 92% of vinyl chloride, not less than 2% and not more than 9% of vinyl acetate and not less than 1% and not more than 8% of vinyl alcohol, in one of the forms mentioned in note 6 (a) and (b) to Chapter 39 |
| ex 3904.50.00 | Copolymers of vinylidene chloride and acrylonitrile, in the form of expandable beads of a diameter not less than four and not more than 20 μm |
| ex 3904.50.00 | Copolymers of vinylidene chloride with vinyl chloride, containing not less than 79.5% by weight of vinylidene chloride, in one of the forms mentioned in note 3 (a) and (b) to Chapter 39, for the manufacture of fibres, monofil or strip (1) |
| ex 3904.69.00 | Copolymer of ethylene with chlorotrifluoroethylene, in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3904.69.00 | Terpolymer of ethylene with chlorotrifluoroethylene and hexafluoro(2-methylpropene) in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3904.69.00 | Copolymer of tetrafluoroethylene and hexafluoropropene compounded with not less than 1% and not more than 51% by weight of one of the following barium sulphate, dibismuth trioxide, dibismuth carbonate dioxide, or tungsten in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3904.69.00 | Polyvinyl fluoride in one of the forms mentioned in note 3 (b) to Chapter 39 |
| ex 3905.90.00 | Polyvinyl formal, in one of the forms mentioned in note 3 (b) to Chapter 39, having a molecular weight not less than 10,000 and not more than 40,000 and containing, by weight:
|
| ex 3906.90.00 | Polymerization products of acrylic acid with small quantities of a polyunsaturated monomer for use as a thickener in textile pigment printing pastes or in the manufacture of products falling within heading No. 3003 (a) |
| ex 3906.90.00 | Terpolymer of ethylene, methyl acrylate and a monomer containing a non-terminal carboxy group as a substituent, whether or not compounded with silica |
| ex 3906.90.00 | Copolymer of acrylic acid and 2-ethylhexyl acrylate, containing not less than 10% and not more than 11% by weight of 2-ethylhexyl acrylate |
| ex 3906.90.00 | Poly[N-(3-hydroxyimino-1,1-dimethylbutyl)acrylamide] |
| ex 3906.90.00 | Copolymers of 2-di-isopropylaminoethyl methacrylate and decyl methacrylate dissolved in N,N-dimethylacetamide, with a copolymer content of not less than 55% by weight |
| ex 3906.90.00 | Polymerization products of acrylic acid, with alkyl, with methacrylate and small quantities of other monomers for use as thickeners in the manufactures of textile printing pastes (1) |
| ex 3906.90.00 | Copolymer of acrylonitrile and methylacrylate modified with polybutadieneacrylonitrile (NBR) |
| ex 3911.90.90 | Alternating copolymer of ethylene and maleic anhydride, for use as a thickener in textile pigment printing pastes (1) |
| ex 3911.90.90 | Polymerization products of (polybutadiene)polyol and two lactams N,N'-linked by the bivalent acyl radical of a dicarboxylic acid |
| ex 3919.90.31, ex 3920.62.00 and ex 3921.90.19 | Reflecting laminated sheeting, metallized, consisting of one sheet of polyester and at least another sheet of polyester or other plastic material and coated on one side with an adhesive, whether or not protected by a release sheet |
| ex 3919.90.31, ex 3920.62.00, ex 3920.63.00, ex 3920.69.00 and ex 3921.90.19 | Reflecting polyester sheeting in which microspheres are embedded |
| ex 3919.90.50 | Polyvinyl chloride sheeting, of a thickness of less than 1mm, coated with an adhesive in which are embedded hollow glass balls having a diameter of not more than 100 micrometres |
| ex 3919.90.50, ex 3920.59.00 and ex 3921.90.60 | Laminated reflecting film of acrylic polymers and isocyanate cross-linking agents, containing embedded glass microspheres metallized with aluminium, which reflect light back to the source of incident light (retro-reflecting), coated on one side with an adhesive |
| ex 3919.90.50, ex 3920.59.00 and ex 3921.90.60 | Reflecting sheeting of an acrylic polymer modified by melamine-formaldehyde, containing glass microspheres |
| ex 3919.90.50, ex 3920.59.00 and ex 3921.90.60 | Reflecting polyacrylic sheeting in which microspheres are embedded |
| ex 3919.90.50, ex 3920.59.00 and ex 3921.90.60 | Laminated reflecting film of acrylic polymer, one layer of which is embossed with a prismatic pattern which reflects light back to the source of incident light (retro-reflecting), coated on one side with an adhesive |
| ex 3920.10.11 | Polyethylene film of a thickness of not less than 20 and not more than 40 micrometres, for the production of photo-resist film used in the manufacture of semiconductors (a) |
| ex 3920.10.11 | Laminated plastic sheet or strip, either:
|
| ex 3920.10.11 and ex 3920.10.19 | Film of a copolymer of ethylene with methyl acrylate, having a thickness of not more than 0,05 mm, for the manufacture of disposable medical gloves (a) |
| ex 3920.10.19, ex 3920.10.90 and ex 3920.99.50 | Film of a thickness of not more than 1 mm of a copolymerization product of vinyl alcohol with ethylene containing no other polymerization products or copolymerization products, with an extension at break (longitudinal or transversal) of not less than 65% |
| ex 3920.10.90 | Copolymer of ethylene with propylene in the form of strip of a width of no less than 18 mm and not more than 27 mm or not less than 58 and not more than 90 cm and of a thickness not exceeding 1 mm, which, after being extended at 23°C to twice the original length, returns to its original length, with a tolerance of not more than +15%, within a period of two minutes |
| ex 3920.10.90 | Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched, polyethylene fibrils, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent |
| ex 3920.10.90 | Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched fibrils of a mixture of polyethylene and a polyethylene copolymer, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent |
| ex 3920.20.90 | Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched fibrils of polypropylene modified by an organic acid, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent |
| ex 3920.42.10 | Reflecting polyvinyl chloride sheeting, wholly embossed on one side in a regular pyramidal pattern |
| ex 3920.59.00 | Copolymerization products of acrylic and methacrylic esters, in the form of film with a thickness not exceeding 150 μm |
| ex 3920.62.00, ex 3920.63.00 and ex 3920.69.00 | Reflecting polyester sheeting embossed in a regular pyramidal pattern |
| ex 3920.62.00 and ex 3921.90.19 | Polyester film, dyed in the mass, of a thickness of not more than 25 μm and metallized on one side |
| ex 3920.62.00, ex 3920.63.00, ex 3920.69.00 and ex 3921.90.19 | Transparent film consisting of polyester coated with a layer of indium and silver |
| ex 3920.62.00 | Polyester film, having a thickness of not less than 74 μm and not more than 76 μm, for use in the manufacture of flexible magnetic discs (floppy disks) (1) |
| ex 3920.62.00, ex 3920.63.00 and ex 3921.90.19 | Polyester film having a thickness of not more than 70 μm, coated on one side with a substance which becomes coloured when heated to not more than 100°C in the presence of salicyclic acid |
| ex 3920.62.00, ex 3920.63.00 and ex 3921.90.19 | Polyester film having a thickness of not more than 10 μm, coated on one side with salicyclic acid |
| ex 3920.69.00 | Iridescent film of polyester and poly(methyl methacrylate) |
| ex 3920.69.00 | Polycondensation products of terephthalic acid with a mixture cyclohex-1,4-ylenedimethanol and ethane-1,2-diol in the form of a film |
| ex 3920.91.00 | Polyvinyl butyral film having a graduated coloured band |
| ex 3920.99.50 | Polyvinyl fluoride sheet |
| ex 3920.99.50 and ex 3921.90.60 | Ion-exchange membranes in fluorinated plastic material, for use in chlor-alkali electrolytic cells (1) |
| ex 3920.99.50 | Poly(1-chlorotrifluoroethylene) film |
| ex 3920.20.90 | Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched polypropylene fibrils, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent |
| ex 3920.99.50 and ex 3921.90.60 | Sheet of a thickness of not less than 1 mm and not more than 3 mm, consisting of a copolymer of ethylene with chlorotrifluoroethylene, whether or not backed with a woven glass fibre fabric |
| ex 3920.99.50 | Films and sheets of a copolymer of ethylene with chlorotrifluoroethylene, with a thickness of not less than 12 and not more than 400 μm |
| ex 3920.99.50 | Microporous polytetrafluoroethylene film, coated on one side with a polymer permeable to water vapour, not less than 30 cm in width and weighing not more than 50 g/m2 |
| ex 3920.99.50 | Microporous polytetrafluoroethylene film of a width of not more than 30 cm and weighing not more than 22,4 g/m2 |
| ex 3920.99.50 | Films of a thickness of not more than 1 mm, entirely of polyvinyl alcohol, containing not more than 2% by weight of unhydrolyzed acetate groups expressed as vinyl acetate and not less than 5% and not more than 15% by weight of glycerol as a plasticizer, not soluble in water at temperatures below 85°C |
| ex 3920.99.50 | Polyvinyl alcohol film coated on both sides having a total thickness of less than 1 mm and with an extension at break (longitudinal or transversal) of not less than 65% |
| ex 3920.99.50 | Polyvinyl alcohol film containing not less than 99% by weight of polyvinyl alcohol, uncoated, with a thickness of not more than 1 mm |
| ex 3920.99.50 | Film of a mixture of polyvinylidene fluoride and of an acrylic polymer having a thickness not less than 40 micrometres and not more than 60 micrometres |
| ex 4010.91.00 | Conveyor belts of synthetic rubber having a width of not less than 31,0 and not more than 31,5 cm and a total length of not less than 96,0 and not more than 100 cm, for use in photocopiers (1) |
| ex 4502.00.00 | Natural cork, debacked or roughly squared, or in rectangular (including square) blocks, plates, sheets or strip (including sharp-edged blanks for corks or stoppers) |
| ex 4823.90.90 | Strips of paper glued to one another to form a honeycomb with a maximum height of 13 cm, impregnated with a copper-based preservative |
| ex 5402.49.99 and ex 5402.69.90 | Yarn of polytetrafluorethylene |
| ex 5402.49.99, ex 5402.59.90 and ex 5402.69.90 | Yarn of polyvinyl alcohol, soluble in water at a temperature of 50°C, for use in the manufacture of weftless “felts” for papermaking machines (1) |
| ex 5402.49.99 | Yarn of a copolymer of glycollic acid and lactic acid for the manufacture of surgical sutures (1) |
| ex 5402.69.90 | Yarn wholly of polyglycollic acid |
| ex 5402.49.99 | Yarn of poly(1,4-dioxanone) |
| ex 5402.49.99, ex 5402.59.90 and ex 5402.69.90 | Non-textured filament yarn of poly(vinyl alcohol), for the manufacture of sleeves for printing rollers (1) |
| ex 5402.41.30 and ex 5402.41.90 | Yarn of synthetic textile fibres exclusively of aromatic polyamides obtained by the polycondensation of m-phenylenediamine and isophthalic acid |
| ex 5402.41.10 | Polyamide yarn, not textured, untwisted or with not more than 22 turns per metre, of crimpable bicomponent filaments consisting of poly(hexamethylene adipamide) and a copolyamide for the manufacture of knee-length stockings falling within subheadings 6115.20.11 and 6115.93.30, women’s stockings falling within subheadings 6115.93.10 and 6115.93.91 or panty hose (tights) falling within subheading 6115.11 (1) |
| ex 5402.39.10 | Texturized yarn of polypropylene, impregnated with silicone-based water-repellant |
| ex 5407.71.00 | Woven fabrics of polyvinyl alcohol fibres, for machine embroidery |
| ex 5407.71.00 and ex 5903.90.99 | Woven poly(tetrafluoroethylene) fibre fabric coated or covered on one side with a copolymer of tetrafluoroethylene and trifluoroethylene having perfluorinated alkoxy side chains ending in carboxylic acid or sulphonic acid groups in the potassium or sodium salt form, whether or not coated on the same side with a metallic inorganic compound |
| ex 5504.10.00 | Fibres entirely of modal (ISO) |
| ex 7019.90.10 | Non-textile glass fibres having a diameter of less than four μm |
| ex 7019.31.00 | Webs, felts, thin sheets and similar products of non-textile glass fibres, of a weight per square metre of not more than 120 g and a fibre diameter, excluding any coating, of not more than 7 μm, for the manufacture of filtration products (1) |
| ex 7019.10.59 | Yarns of 33 tex±7,5%, or a multiple thereof obtained from continuous spun glass filaments having a diameter of not less than 2,5 μm and not more than 5,1 μm, other than those treated so as to improve their adhesion to elastomers |
| ex 7019.10.59 | Yarns obtained from continuous spun glass filaments having a diameter of not less than 12,5 μm and not more than 13,5 μm treated with resorcino-formaldehyde, of not less than 340 tex and not more than 680 tex |
| ex 7019.10.59 | Yarns of 22 tex spun from continuous glass filaments having a diameter of not less than 4,7 and not more than 5,5 μm |
| ex 7019.10.59 | Yarns of 33, 34 or 51 tex±7,5%, or a multiple thereof, spun from continuous glass filaments having a diameter of not less than 5,8 μm and not more than 7,1 μm |
| ex 8506.19.10 | Unit consisting of not more than 2 lithium batteries embedded in a socket for integrated circuits (battery-buffered socket), with not more than 28 connecting pins and incorporating a control circuit |
| ex 8506.19.10 | Lithium iodine single cell battery with dimensions of 45×9×23 mm and a voltage not exceeding 2,8 V |
| ex 8506.19.90 | Dry zinc/carbon batteries of a voltage of not less than 5,5 and not more than 6,5 and of a size not exceeding 110×90×5 mm, for incorporation in film cassettes for instant pictures (1) |
| ex 8540.11 | Cathode-ray tubes (colour) equipped with a perforated mask (so-called “dot mask”) with electron guns placed in a triangle (“delta” technique) or placed side by side (“in-line” technique) with convergence errors of not more than 0,8 mm in the corners, having a diagonal angle of deflection not exceeding 90° and with maximum colour dot spacing of less than 0,4 mm |
| ex 8541.10.91 | Silicon power rectifier diodes of planar technology, with a recovery time of less than 100 nanoseconds, a maximum recurring reverse voltage of 200 V, and average conducting-state, current of 2,5 A, contained in a housing the exterior dimensions of which do not exceed 11×17 mm |
| ex 8541.10.99 | Germanium-gold diodes with forward voltage not exceeding 1 V at 5 mA |
| ex 8541.29.90 | Transistor with a power of not less than 150 W at a voltage of not less than 160 V and with a cut-off frequency of not less than 20 MHz, contained in a housing the exterior dimensions of which do not exceed 37×22 mm, with not more than 3 connecting pins and bearing:
|
| ex 8541.40.10 | Light emitting diode (LED) made from a gallium-based semiconductor compound, mounted in a rectangular housing the exterior dimensions of which do not exceed 4×20×21 mm, with two connecting pins, and bearing:
|
| ex 8541.40.10 | Assembly consisting of not more than 10 light-emitting diodes (LEDs) made from a gallium-based semiconductor compound, mounted in a rectangular housing the exterior dimensions of which do not exceed 68×25×4 mm, with not more than 20 connecting pins, and bearing:
|
| ex 8541.40.10 | Laser diode with one photodiode, emitting light of a nominal wavelength of 780 nm, contained in a housing having a diameter of not more than 10 mm and a height of not more than 7 mm, with 3 connecting pins and bearing:
|
| ex 8541.40.10 ex 8542.20.00 | Digital displays, consisting of a printed circuit board of a size not exceeding 35×90 mm with a single line of characters, not less than three in number, comprising light-emitting diodes made from gallium-based semiconductor compounds mounted thereon. Each character is composed of up to eight segments with or without a decimal point and the line of characters has a protective cover of plastic |
| ex 8542.11.30 | Electrically erasable, programmable read-only memories (so-called E2PROMs), in the form of an unmounted monolithic integrated circuit (chip) with a storage capacity of 16 Kbits, used in the manufacture of microwave systems for the identification of persons and objects (a) |
| ex 8542.11.71 | Static random access memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 16×4 bits, an access time not exceeding 35 ns, contained in a housing the exterior dimensions of which do not exceed 9×21 mm, with not more than 16 connecting pins and bearing:
|
| ex 8542.11.71 | Static random access memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 256×4 bits and an access time not exceeding 60 ns, contained in a housing the exterior dimensions of which do not exceed 12×29 mm, with not more than 22 connecting pins and bearing:
|
| ex 8542.11.71 | Static, random-access memory of C-MOS technology (C-MOS S-RAM) with a storage capacity of 2 K×8 bits and with a nominal standby power of 0,005 milliwatts at 25°C in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Non-volatile memory in the form of a monolithic integrated circuit, consisting of a C-MOS S-RAM, with a capacity of 16 K bits and internal power supply, contained in a housing the exterior dimensions of which do not exceed 19×36 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Static, random access memory of C-MOS technology (C-MOS S-RAM) with a storage capacity of 32 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Static, random-access memories of C-MOS technology (C-MOS S-RAMs), with a storage capacity of 8 K×8 bits with an access time of not less than 80 nanoseconds, in the form of a monolithic integrated circuit, contained in a plastic housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Non-volatile memory consisting of a static read/write random access memory of C-MOS technology (C-MOS S-RAM), with a storage capacity of 64 Kbits and an internal energy source, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 20×42 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Static random access memories (S-RAMs) of C-MOS technology, with a storage capacity of 256 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 39×17 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Non-volatile memory in the form of a monolithic integrated circuit, consisting of a static C-MOS random access memory, with a storage capacity of 256 K bits and built-in energy source, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Static random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs) with a storage capacity of 256×4 bits with access time not exceeding 25 nano/seconds in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Static random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs) with a storage capacity of 8 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Static read/write random-access memories N-MOS (including H-MOS) technology (N/H-MOS RAMs, static), with a storage capacity of 72 K bits, in the form of a monolithic integrated circuit, contained in a housing whose dimensions do not exceed 10×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Static random-access memories of bipolar technology (bipolar S-RAMs) in the form of a monolithic integrated circuit and with a storage capacity of 64×9 bits, contained in a housing the exterior dimensions of which do not exceed 16×40 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Static random access memories of bipolar technology (bipolar S-RAMs) in the form of a monolithic integrated circuit, consisting of a substrate layer on which are mounted either 1 or 2 chips each having a storage capacity of 1 K bit, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:
|
| ex 8542.11.71 | Static memories consisting of two stacked substrate layers with one or two static random access memories of bipolar technology (bipolar S-RAMs), in the form of monolithic integrated circuits, each with a storage capacity of 1 K bit and with a maximum storage capacity of 4 K bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:
|
| ex 8542.11.71 | Static, random-access memories of TTL technology (TTL S-RAMs) with a storage capacity of 1 K bit and an access time not exceeding 45 ns, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×30 mm, with not more than 22 connecting pins and bearing:
|
| ex 8542.11.71 | Dynamic random access memories of C-MOS technology (C-MOS D-RAMs) with a storage capacity of 256 K bits in the form of a monolithic integrated circuit, contained in a housing whose external dimensions do not exceed 17×34 mm, with not more than 18 connecting pins and bearing:
|
| ex 8542.11.71 | Dual port dynamic random access memory (D-RAM) of N-MOS (including H-MOS) technology, with data registers and a serial read output control, with a storage capacity of 256 K bits in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 13×39 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Random access memories of ECL technology (ECL-RAMs) with a storage capacity of 256×4 bits, and access time not exceeding 8 ns in the form of a monolithic integrated circuit, contained in a housing the dimensions of which do not exceed 11×32 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Random access memories of ECL technology (ECL-RAMs) with a storage capacity of 4 K bits and an access time not exceeding 50 ns in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 11×32 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Random access memories of ECL technology (ECL-RAMs) with a storage capacity of 16 K bits and an access time not exceeding 15 ns in the form of a monolithic integrated circuit, contained in a housing the dimensions of which do not exceed 18×37 mm, with not more than 28 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Dynamic read/write random access memories manufactured in N-MOS (including H-MOS) technology (D-RAMs), in the form of a monolithic integrated circuit, consisting of a substrate layer with not less than two and not more than eight chips having a storage capacity of 128,192 or 256 K bits and a storage capacity of not less than 256 K bits and not more than two megabits, contained in a housing whose dimensions do not exceed 30×30 mm, with not more than 57 connecting pins and bearing:
|
| ex 8542.11.71 | Read-only memories (ROMs), in the form of a monolithic integrated circuit, with a storage capacity of 16 K×8 bits, with read-register and serial output control, contained in a housing the exterior dimensions of which do not exceed 50×16 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.71 | Programmable, non-erasable, read-only memories (PROMs) of Schottky TTL technology, with a storage of 2 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins or contact areas, and bearing:
|
| ex 8542.11.71 | Programmable non-erasable MOS technology read-only memories (PROMs) with a storage capacity of 16 K bits, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 39×17 mm, with not more than 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Programmable non-erasable read-only memories (PROMs) of bipolar technology with a storage capacity of 16 K bits and a standby current equal to, or of more than, 50 m A and less than, or equal to, 80 m A in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 33×14 mm, with not more than 24 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Programmable non-erasable read-only memories (PROMs) with a storage of 32 K bits, in the form of a monolithic integrated circuit, whose external dimensions do not exceed 17×39 mm, with not more than 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Programmable non-erasable read-only memory (PROM) in the form of a monolithic integrated circuit having a storage capacity of 64 K bits and an access time of not more than 65 nonoseconds, contained in a housing whose external dimensions do not exceed 17×39 mm, with a maximum of 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | UV-erasable, programmable, read-only memories (EPROMs) with a storage capacity of 2 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with a quartz window on the upper surface and bearing:
|
| ex 8542.11.71 | UV-erasable, programmable, read-only memory (EPROM) equipped with a programmable input/output system, with a storage capacity of 2 K×8 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×52 mm, with a quartz window on the upper face and bearing:
|
| ex 8542.11.71 | UV-erasable programmable read-only memory (EPROM) in the form of a monolithic integrated circuit having a storage capacity of 16 K bits and an access time of not more than 65 ns, contained in a housing the external dimensions of which do not exceed 17×39 mm, equipped with a quartz window on its upper surface, and bearing:
|
| ex 8542.11.71 | UV-erasable programmable read-only memory (EPROM) in the form of a monolithic integrated circuit having a storage capacity of 64 K bits and an access time of not more than 65 ns, contained in a housing the external dimensions of which do not exceed 17×39 mm, equipped with a quartz window on its upper surface, and bearing:
|
| ex 8542.11.71 | Electrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 4 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Electrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 16 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 32 connecting pins or contact areas bearing:
|
| ex 8542.11.71 | Electrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 64 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Electrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 128 K bits, in the form of a monolithic circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Electrically erasable, programmable, read-only memories (E2PROMs) with a storage capacity of 256 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 32 connecting pins or contact areas and bearing:
|
| ex 8542.11.71 | Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 256 bits superimposed bit-for-bit on a programmable, electrically erasable, read-only-memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 8×24 mm, with not more than 18 connecting pins and bearing:
|
| ex 8542.11.71 | Monolithic integrated circuit consisting of a static random-access memory (S-RAM) with a storage capacity of 1 K bit, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.71 | Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 2 K bits, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.71 | Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 4 K bits, superimposed bit-for-bit on an electrically erasable, programmable, read-only-memory (E2PROM), contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.75 | 8-bit-single-chip microcomputer of C-MOS technology consisting of a random access memory with a capacity of 2 K bits, a programmable read-only memory with a capacity of 64 K bits and a multi-protocol serial communication port, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 52×52 mm, with not more than 68 connecting pins or contact areas and bearing:
|
| ex 8542.11.75 | Single-chip microcomputer of C-MOS technology, in the form of a monolithic integrated circuit, consisting of an arithmetical logic unit (ALU) with an organization of 4 bits, a read-only memory (ROM) with a storage capacity of 2 K×8 bits, a dual-tone, multi-frequency (DTMF) generator, a random access memory (RAM) with a storage capacity of 1 K bit, whether or not with another random access memory (RAM) with a storage capacity of 512 bits, contained in a housing whose dimensions do not exceed 16×54 mm, with not more than 42 connecting pins and bearing:
|
| ex 8542.11.75 | Single-chip microcomputer in C-MOS-technology, in the form of a monolithic integrated circuit consisting of an ALU with a capacity of 32 bits, a ROM with a capacity of 24 K bits and a RAM with a capacity of 2 K bits, contained in a housing the exterior dimensions of which are not less than 30×30 mm, with not less than 84 connecting pins or contact areas and bearing:
|
| ex 8542.11.75 | Single-chip microcomputers, in the form of a monolithic integrated circuit, consisting of an arithmetical unit with a capacity of four bits plus a read-only memory (ROM) with a capacity of not less than 18 K bits and not more than 104 K bits and a random-access memory (RAM) with a capacity of not less than 512 bits and not more than 4 K bits, contained in a housing the exterior dimensions of which do not exceed 20×60 mm, with not more than 80 connecting pins and bearing:
|
| ex 8542.11.75 | Single-chip microcomputer, in the form of a monolithic integrated circuit, consisting of an arithmetic-logic unit with a capacity of 8 bits plus an electronic, programmable, read-only memory (EPROM) UV-erasable with a capacity of 32 K bits and a random access memory (RAM) with a capacity of 1 K bit, contained in a housing the exterior dimensions of which do not exceed 16×53 mm, with a quartz window and not more than 40 connecting pins and bearing:
|
| ex 8542.11.75 | Single-chip 8-bit microcomputer of MOS technology, having universal peripheral interface functions, consisting of a central processing unit, a random access read-write memory (RAM) with a storage capacity of 1 K bit, UV-erasable, programmable read-only memory (EPROM) with a storage capacity of 2 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×52 mm, having a quartz window on the upper face, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.75 | 8-bit microprocessor of C-MOS technology, consisting of a central processing unit (CPU), a memory controller, a two-channel DMA controller, two-channel programmable 16-bit counter/timer, a wait-state generator, a two-channel asynchronous serial communication interface (ASCI) and a bus controller, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 62×26 mm, with not more than 68 connecting pins and bearing:
|
| ex 8542.11.75 | 16-bit microprocessor of C-MOS technology, consisting of a central processing unit (CPU), a memory controller, a 2 K bit cache memory, three programmable 16-bit counter/timers, a full duplex universal asynchronous receiver/transmitter (UART) and four DMA channels, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 26×26 mm, with not more than 68 connecting pins or contact areas and bearing:
|
| ex 8542.11.75 | 16-bit microprocessor of C-MOS technology, consisting of a central processing unit (CPU) and a 8-bit or 16-bit external data bus, contained in a housing the exterior dimensions of which do not exceed 54×16 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.75 | 32-bit microprocessor (MPU) of C-MOS technology in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 38×38 mm, with not more than 132 connecting pins and bearing:
|
| ex 8542.11.75 | 8-bit microprocessor of N-MOS (including H-MOS) technology, for the encoding/decoding of data (data ciphering processor), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 53×15 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.75 | 16-bit microprocessor in N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of a central processing unit (CPU), a timing generator, two independent DMA channels, a programmable interrupt controller, three programmable 16 bit timers, programmable memory and external chip selection logic, a programmable wait state generator with bus control unit, contained in a housing the exterior dimensions of which do not exceed 30×30 mm, with not more than 68 connecting pins or contact areas and bearing:
|
| ex 8542.11.75 | 16-bit microprocessor of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×82 mm, with not more than 68 connecting pins or contact areas and bearing:
|
| ex 8542.11.75 | Floating-point arithmetic co-processor of C-MOS technology, in the form of a monolithic integrated circuit contained in a housing whose exterior dimensions do not exceed 30×30 mm, with not more than 80 connecting pins and bearing:
|
| ex 8542.11.75 | Text co-processor, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins, and bearing:
|
| ex 8542.11.75 | Numeric processor extension unit of N-MOS (including H-MOS) technology (N-MOS NPX) containing not more than 14 registers, in the form of a monolithic intergrated circuit, contained in a package the exterior dimensions of which do not exceed 16×53 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.75 | Central processing unit of N-MOS (including H-MOS) technology (N-MOS CPU), in the form of a monolithic integrated circuit consisting of a 16×16 bit service memory, a 16×20 bit service memory, a 32×32 bit service memory, an 8×8 bit service memory, a 16 bit register, two 20 bit registers, an 8 bit register, one 12 bit register, a 5 bit counter and timing network, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:
|
| ex 8542.11.91 | Arithmetic-logic of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 32 bit register, one 24 bit register, one 4 bit register, twelve 1 bit registers, two 16×24 bit service memories, one logic network performing arithmetic and logic operations, decodifying logic, and error detection and management logic, one 8 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:
|
| ex 8542.11.91 | Logic circuit of N-MOS (including H-MOS) technology (N-MOS LC) serving as a clock generator for central process unit, main memory and input/output interfaces, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:
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| ex 8542.11.91 | Clock generator and controller for microprocessors, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 24×8 mm, with not more than 18 connecting pins and bearing:
|
| ex 8542.11.91 | Logic circuit of bipolar technology, with not more than six logic functions, a supply voltage of not less than 11 V and not more than 18 V, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 8×23 mm, with not more than 18 connecting pins and bearing:
|
| ex 8542.11.91 | Logic control circuits of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 7 bit register, three timers, one multiplexer sequential and combining networks intended to perform control operations, decodifying logic, error detection and management logic and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:
|
| ex 8542.11.91 | Field programmable array logics (PALs) of C-MOS-technology, in the form of a monolithic integrated circuit, with fusible links, a programmable AND array, fixed OR array, not more than 32 inputs and not more than 10 outputs, whether or not with registers, contained in a housing the exterior dimensions of which do not exceed 19×39 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.11.91 | Programmable, non-erasable, logic circuits (field programmable logic array) of TTL Schottky technology, with not more than 48 AND functions, not more than eight OR functions, and not more than 16 inputs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | Non-erasable user-programmable logic sequencer of bipolar technology, having not more than 48 AND functions, a 6-bit state register, an 8-bit output register, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | UV-erasable programmable logic device (EPLD) of C-MOS technology containing not less than 600 logic gates, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 29×124 mm, with a quartz window on the upper surface, with not more than 24 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Error detection and correction circuit of N-MOS (including H-MOS) technology capable of detecting and correcting single bit errors and detecting all double bit errors, in the form of monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 30×30 mm, with not more than 68 contact areas and bearing:
|
| ex 8542.11.91 | Burst error processor (BEP) of N-MOS (including H-MOS) technology for detecting and correcting multiple errors derived from a line of magnetic discs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Error correction and detection unit (ECDU) of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×62 mm, with not more than 48 connecting pins and bearing:
|
| ex 8542.11.91 | Control and interface circuit for central processor (CPU-controller) of C-MOS technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 31×31 mm, with not more than 84 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Hard-disc controller of N-MOS (including H-MOS) technology (N-MOS-HDCs), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×53 mm, with not more than 44 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | 4-channel read/write monolithic integrated circuit of bipolar technology for controlling magnetic heads in hard disk units, contained in a housing whose exterior dimensions do not exceed 12×19 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | Buffer manager and controller of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit contained in a housing whose exterior dimensions do not exceed 54×17 mm with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Buffer manager and controller of C-MOS technology in the form of a monolithic integrated circuit contained in a house whose exterior dimensions do not exceed 31×31 mm with not more than 84 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Control circuit for static memory control (S-RAM) with address multiplexing and pulse generation facility, in the form of a monolithic integrated circuit of MOS technology contained in a housing whose dimensions do not exceed 28×54 mm, with not more than 68 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Control circuit of bipolar technology in the form of a monolithic integrated circuit for the control of dynamic random-access memories (D-RAMs), capable of multiplexing addresses and generating timing, contained in a housing the exterior dimensions of which do not exceed 17×62 mm, with not more than 48 connecting pins and bearing:
|
| ex 8542.11.91 | Dynamic random access memory controller of N-MOS (including H-MOS) technology (N-MOS D-RAM controller) capable of multiplexing addresses and generating timing, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×62 mm, with not more than 48 connecting pins or 52 contact areas, and bearing:
|
| ex 8542.11.91 | Memory controller of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing whose dimensions do not exceed 36×36 mm, with not more than 132 connecting pins and bearing:
|
| ex 8542.11.91 | Memory management unit of N-MOS (including H-MOS) technology (N-MOS MMU) with a maximum addressing capacity of 4 G bytes, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 36×82 mm, with not more than 125 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Sequence control circuit of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 32 bit register, three 16 bit registers, one 16×16 bit service memory, one 7×17 bit last-in-first-out (LIFO) memory, one adder circuit, decodifying logic, priority logic, error detection and management logic, one 16 bit multiplexer, one 8 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:
|
| ex 8542.11.91 | Input-output circuit of N-MOS (including H-MOS) technology for data control equipped with a timing control with a static random access memory (S-RAM) with a capacity of 128×8 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Sequential data control circuit of MOS technology for interface between a hard disc memory unit and the memory control unit in the form of a monolithic integrated circuit of MOS technology contained in a housing whose exterior dimensions do not exceed 28×54 mm, with not more than 68 connecting pins and bearing:
|
| ex 8542.11.91 | Control circuit of C-MOS technology for the control of S/RAMs, capable of multiplexing addresses and generating pulses, and for the sequential control of data for the peripheral magnetic unit/rigid disk interface, and memory control, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 30×30 mm, with not more than 84 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Status and shift control unit of bipolar technology in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×57 mm with not more than 42 connecting pins and bearing:
|
| ex 8542.11.91 | Circuit of advanced low power Schottky (ALPS) technology for the asynchronous control of signal lines (bus) and the conversion of a local bus into a multiplexed bus (BAM) in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 37×13 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | Contention resolving a local area network (LAN) controller, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 63×63 mm, with not more than 84 connecting pins and bearing:
|
| ex 8542.11.91 | Enhanced programmable communications interface (EPCI), in the form of monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | Serial communication controllers of C-MOS technology, with two independent duplex channels with a capacity of 2 Mbits/sec, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 53×18 mm, with not more than 44 connecting pins and bearing:
|
| ex 8542.11.91 | Display controller and character generator (DCCG) for liquid crystal dot matrix display system in the form of a monolithic integrated circuit of C-MOS technology, contained in a housing the exterior dimensions of which do not exceed 20×26 mm, with not more than 60 connecting pins and bearing:
|
| ex 8542.11.91 | Interpolation pulse generator of C-MOS technology for controlling geometrical functions, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | Video control circuit for graphics and memory (video controller), in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 15×52 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Monochrome display controller (MDC) of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:
|
| ex 8542.11.91 | Cathode-ray tube controller (CRTC) of C-MOS technology in the form of a monolithic integrated circuit, contained in a housing whose dimensions do not exceed 32×62 mm, with not more than 84 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Control circuit for cathode-ray tubes or liquid crystal displays (CRT and LCD controller) of C.MOS technology, in the form of a monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 30×30 mm, with not more than 84 connecting pins or contact areas, and bearing:
|
| ex 8542.11.91 | Cathode-ray tube controller (CRTC) of bipolar technology in the form of a monolithic integrated circuit contained in a housing whose exterior dimensions do not exceed 15×55 mm with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Graphics controller of C-MOS technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 31×31 mm, with not more than 84 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Graphic display controller (GDC), of N-MOS technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 52×18 mm, with not more than 44 connecting pins and bearing:
|
| ex 8542.11.91 | Colour selection controller of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 19×52 mm, with not more than 44 connecting pins or contact areas and bearing:
|
| ex 8542.11.91 | Analogue-digital monolithic circuit, capable of controlling spindle motors and keeping their speed constant, contained in a housing whose exterior dimensions do not exceed 9×25 mm, with not more than 20 connecting pins and bearing:
|
| ex 8542.11.91 | Analogue-digital monolithic integrated circuit of bipolar technology, for damping the oscillations of stepping motors during the positioning phase, contained in a housing whose exterior dimensions do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.11.91 | Controller for servo-devices of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×54 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Eight-Channel control circuit for maintaining a constant electromagnetic traction force with incorporated diodes and a storage capacity of eight bits, in the form of a monolithic integrated circuit, of C-MOS technology contained in a housing the exterior dimensions of which do not exceed 9×28 mm, with not more than 22 connecting pins and bearing:
|
| ex 8542.11.91 | Four-Channel control circuit for maintaining a constant electromagnetic traction force with incorporated diodes and a storage capacity of four bits, in the form of a monolithic integrated circuit of C-MOS technology, contained in a housing the exterior dimensions of which do not exceed 7×22 mm, with not more than 16 connecting pins and bearing:
|
| ex 8542.11.91 | Control circuit of TTL technology in the form of a monolithic integrated circuit for the firing of magnetic print hammers, contained in a housing the exterior dimensions of which do not exceed 8×23 mm, with not more than 18 connecting pins and bearing:
|
| ex 8542.11.91 | 8-bit-(octal) dynamic memory bipolar driver in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 20 connecting pins and bearing.
|
| ex 8542.11.91 | Parallel communications interface of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 64×64 mm, with not more than 40 connecting pins and bearing:
|
| ex 8542.11.91 | Subscriber line interface circuit (SLIC) with a high voltage rating of not less than 200 V, with direct internal relay drive, in the form of a monolothic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:
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| ex 8542.11.91 | Control circuit for data block transfer between dynamic memory and peripherals (DMA Transfer Controller or ,,DTC“), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 63×16 mm, with not more than 48 connecting pins, and bearing:
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| ex 8542.11.91 | Serial interface, capable of implementing the data stream encoding, decoding and associated control functions for a local area network, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 24 connecting pins and bearing:
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| ex 8542.11.91 | Station digital interface circuit for parallel/serial or serial/parallel conversion of digital signals in telephone sets, of C-MOS technology (C-MOS STID), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, and bearing:
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| ex 8542.11.91 | Bus interface circuit of bipolar technology with 8, 9 or 10-bit registers, in the form of monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 9×34 mm, with not more than 24 connecting pins or contact areas and bearing:
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| ex 8542.11.91 | Multiple bus interface circuit (Multiple Bus Buffer) of low power Schottky technology for interfacing the error correction and detection unit system data bus and dynamic random access memory (D-RAM), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 8×33 mm, with not more than 24 connecting pins and bearing:
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| ex 8542.11.91 | Bus interface circuit of ALPS technology, in the form of a monolithic integrated circuit, for the management of address signals, contained in a housing the external dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:
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| ex 8542.11.91 | Bus interface circuit of ALPS technology, in the form of a monolithic integrated circuit, for the management of data flow in the signal lines of the CPU, contained in a housing the external dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:
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| ex 8542.11.91 | Bus interface circuit in C-MOS technology, in the form of a monolithic integrated circuit, for the control of communication lines comprising a numerical bus, two independent receivers and a transmitter consisting of a first-in first-out (FIFO) memory, contained in a housing whose exterior dimensions do not exceed 20×52 mm, with not more than 44 connecting pins or contact areas and bearing:
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| ex 8542.11.91 | Bus interface circuit of C-MOS technology, in the form of a monolithic integrated circuit, for the management of address signals, comprising a circuit with 4×2-input AND gates, 2 buffer circuits, 2 latch circuits, 4 independent transceivers, a 256×4 bit PROM, contained in a housing the external dimensions of which do not exceed 31×31 mm, with not more than 84 connecting pins and bearing:
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| ex 8542.11.91 | Bus interface circuit C-MOS technology, in the form of a monolithic integrated circuit, for the management of I/0 data flow in signal lines, with 4 independent transceivers, a circuit with 4×2-input NAND gates, a circuit with 4×2-input AND gates, a separator circuit, a flip-flop circuit, contained in a housing the external dimensions of which do not exceed 31×31 mm, with not more than 84 connecting pins and bearing:
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| ex 8542.11.91 | Interface circuit for the synchronization of data flow from a hard disc drive, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 16×35 mm, with not more than 28 connecting pins and bearing:
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| ex 8542.11.91 | Analogue-digital monolithic integrated circuit of bipolar technology for interface signals between the peripheral hard-disc, memory unit and the central unit, contained in a housing the external dimensions of which do not exceed 15×50 mm, with not more than 40 connecting pins and bearing:
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| ex 8542.11.91 | Interface circuit of C-MOS technology for signals between peripheral hard disc memory units and central units, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 28×53 mm, with not more than 80 connecting pins or contact areas and bearing:
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| ex 8542.11.91 | Encoder/decoder serial interface circuit for hard disc drives, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 17×37 mm, with not more than 28 connecting pins or contact areas and bearing:
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| ex 8542.11.99 | Computing unit for the multiplication or processing of fixed and floating point numbers, of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 42×42 mm, with not more than 144 connecting pins and bearing:
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| ex 8542.11.99 | 8×8 bit multiplier accumulator (MAC) of C-MOS technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 62×16 mm, with not more than 48 connecting pins and bearing:
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| ex 8542.11.99 | Floppy-disc data separator (FDDS), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 27×8 mm, with not more than 20 connecting pins and bearing:
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| ex 8542.11.99 | Hard Disc Data Separator (HDDS) in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 16×37 mm, with not more than 28 connecting pins and bearing:
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| ex 8542.11.99 | Six-or eight-channel monolithic integrated circuit for the generation of read/write signals for hard disc drivers, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 40 connecting pins and bearing:
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| ex 8542.11.99 | Dual universal asynchronous receiver/transmitter (DUART) of MOS-technology, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 16×53 mm, with not more than 40 connecting pins and bearing:
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| ex 8542.11.99 | Programmable asynchronous communication element circuit N-MOS technology, for the asynchronous transmission and reception of data, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×54 mm, with not more than 44 connecting pins or contact areas and bearing:
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| ex 8542.11.99 | Monolithic integrated circuit in N-MOS technology (including H-MOS) for the display of graphic symbols on a cathode-ray-tube operating in stroke mode, contained in a housing whose exterior dimensions do not exceed 28×61 mm, with not more than 68 connecting pins and bearing:
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| ex 8542.11.99 | Sequential control and generating circuit of CMOS technology for the memory display, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 19×52 mm, with not more than 44 connecting pins or contact surfaces and bearing:
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| ex 8542.11.99 | Demodulator/tone decoder of bipolar technology for frequency decoding, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 14 connecting pins and bearing:
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| ex 8542.11.99 | Encoder/decoder circuit using Manchester code (MED) for the transmission of data in continuous flux with a repeater mode in C-MOS technology, having an output voltage of 4,5 volts, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 20 connecting pins and bearing:
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| ex 8542.11.99 | Analogue-digital signal converter, containing amplifiers, D/A and A/D converters with a supply voltage of 12 V±10% and a digital serial interface with asynchronous receiver/transmitter, in the form of a monolithic integrated circuit, contained in a housing whose external dimensions do not exceed 18×18 mm, with not more than 44 connecting pins or contact areas and bearing:
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| ex 8542.11.99 | Analogue to digital converter for the calculation of the average value of variable wave-forms, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×10 mm, with not more than 14 connecting pins and bearing:
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| ex 8542.11.99 | 12-bit-analogue to digital converter, in the form of a monolithic integrated circuit incorporating a voltage reference and clock, contained in a housing the external dimensions of which do not exceed 36×15 mm, with not more than 28 connecting pins and bearing:
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| ex 8542.11.99 | C-MOS clock circuit, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 16 connecting pins, and bearing:
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| ex 8542.11.99 | C-MOS clock circuit, operating from a single 1,5 V power supply, with a liquid crystal display (LCD) driver, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×21 mm, with not more than 56 connecting pins and bearing:
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| ex 8542.11.99 | C-MOS clock/calendar circuit, incorporating a quartz crystal oscillator, independent timer recorders and a timer, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 7×20 mm, with not more than 16 connecting pins and bearing:
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| ex 8542.11.99 | C-MOS clock circuit with audio and hour-count output, in the form of a monolithic integrated circuit, contained in a housing whose dimensions do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:
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| ex 8542.11.99 | MOS programmable interval timer (MOS PIT), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins or contact areas and bearing:
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| ex 8542.11.99 | Function generator of bipolar technology for the generation of variable waveforms, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 16 connecting pins and bearing:
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| ex 8542.11.99 | Digital signal synthesizer of C-MOS technology with one frequency generator producing one signal and able to output one sound, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 8×25 mm, with not more than 18 connecting pins and bearing:
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| ex 8542.11.99 | Programmable digital signal synthesizer of C-MOS technology with 13 frequency generators each producing up to five sounds and an output capacity of up to 65 sounds, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×50 mm, with not more than 40 connecting pins and bearing:
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| ex 8542.11.99 | Programmable digital signal synthesizer of C-MOS technology with 32 frequency generators to generate eight notes each and a simultaneous output of up to 160 notes, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins or contact areas and bearing:
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| ex 8542.11.99 | C-MOS-phoneme speech synthesizer, with a supply current of less than 10 mA, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:
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| ex 8542.11.99 | Amplifier, of bipolar technology for the amplification of either read or write signals of floppy discs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 11×29 mm, with not more than 22 connecting pins and bearing:
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| ex 8542.11.99 | Six-Channel monolithic integrated circuit (Read/Write data processor circuit) for the amplification and conversion of read signals and conversion of write signals for hard disc drives, contained in a housing the exterior dimensions of which do not exceed 19×38 mm, with not more than 28 connecting pins or contact areas and bearing:
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| ex 8542.11.99 | Repeater circuit, of bipolar technology for the regeneration of pulse code-modulated signals, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 16 connecting pins and bearing:
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| ex 8542.11.99 | Smoke detector operating in a temperature range between at least −20°C to 50°C, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 23×9 mm, with not more than 18 connecting pins and bearing:
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| ex 8542.19.20 | Amplifier, in the form of a monolithic integrated analog circuit the exterior dimensions of which do not exceed 3×3 mm for use in the manufacture of products falling within subheading 9021 40 00f2 |
| ex 8542.19.30 | Amplifier, in the form of a monolithic integrated analog circuit, contained in a housing the exterior dimensions of which do not exceed 2×4×4 mm, with not more than 10 connecting pins and bearing:
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| ex 8542.19.30 | Electronically adjustable differential amplifiers for at least the full range of signals from 0 to not less than 400 MHz, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 11×11 mm, with not more than 16 connecting pins, and bearing:
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| ex 8542.19.30 | Amplifier for a full range of signals from 0 to 60 KHz, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 6×13×26 mm, with not more than 18 connecting pins and a leakage of not more than 0.3 μA and bearing:
|
| ex 8542.19.30 | Read/write amplifier for thin film magnetic heads, in the form of a monolithic integrated analogue circuit, contained in a housing the exterior dimensions of which do not exceed 8×11 mm, with not more than 24 connecting pins or contact areas and bearing:
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| ex 8542.19.30 | Winchester disc drive amplifier for magnetic heads, in the form of a monolithic integrated analogue circuit, contained in a housing the exterior dimensions of which do not exceed 7×7 mm, with not more than 10 connecting pins and bearing:
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| ex 8542.19.30 | Amplifier with a programmable gain factor in the form of a monolithic integrated analogue circuit, contained in a housing the exterior dimensions of which do not exceed 30×45 mm, with not more than 32 connecting pins and bearing:
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| ex 8542.19.30 | Thermocouple amplifier for instrumentation control at temperatures from 0° to 50°C, incorporating an alarm system, in the form of a monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 20×8 mm, with not more than 14 connecting pins and bearing:
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| ex 8542.19.90 | Monolithic integrated analogue circuit of bipolar technology for the overload protection of telephone exchanges, contained in a housing the exterior dimensions of which do not exceed 11×10 mm, with not more than 3 connecting pins and bearing:
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| ex 8542.19.90 | Frequency generator in the form of an analogue monolithic integrated circuit of bipolar technology, with an operating voltage of not less than 40 and not more than 130 V AC, which generate signals oscillating between 512 Hz (±22%) and 640 Hz (±22%) at a 10 Hz rate, contained in a housing the external dimensions of which do not exceed 9×11 mm, with not more than 8 connecting pins and bearing:
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| ex 8542.19.90 | Monolithic integrated analogue circuit for the reduction of audio noise by 14 dB, contained in a housing the exterior dimensions of which do not exceed 26×7 mm, with not more than 18 connecting pins and bearing:
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| ex 8542.19.90 | Premagnetization control circuit for audio frequency magnetic tapes, of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 26×8 mm, with not more than 18 connecting pins and bearing:
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| ex 8542.19.90 | Temperature transducer in the form of a monolithic analogue integrated circuit, contained in a housing the exterior dimensions of which do not exceed 6×4 mm, with not more than three connecting pins and bearing:
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| ex 8542.19.90 | Monolithic integrated analogue circuit of C-MOS technology for controlling the speed of linear or rotary motors and the positioning of magnetic heads, contained in a housing the exterior dimensions of which do not exceed 14×38 mm, with not more than 28 connecting pins and bearing:
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| ex 8542.19.90 | Monolithic integrated analogue circuit of bipolar technology for driving linear motors or motors with rotating arms, working at 20 V/2,5 A maximum, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:
|
| ex 8542.19.90 | Phase-locked loop (PLL) frequency synthesizer of N-MOS (including H-MOS) technology for the AM and FM frequency ranges, in the form of a monolithic integrated analogue circuit, contained in a housing the exterior dimensions of which do not exceed 25×7 mm, with not more than 20 connecting pins and bearing:
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| ex 8542.20.00 | 32-bit microprocessor in C-MOS technology, in the form of a hybrid integrated circuit, consisting of a single substrate layer on which are mounted two chips, comprising a central processing unit (CPU) and a memory unit, the exterior dimensions of which do not exceed 33×76 mm, with not more than 60 connecting pins and bearing:
|
| ex 8542.20.00 | Video digital to analogue converter (VDAC) with a maximum conversion time of 10 nanoseconds, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 20×35 mm, with not more than 24 connecting pins and bearing:
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| ex 8542.20.00 | Four-channel digital-to-analogue converter, each channel having a capacity of 12 bits, in the form of a hybrid integrated circuit, contained in a housing the external dimensions of which do not exceed 41×21 mm, with not more than 28 connecting pins and bearing:
|
| ex 8542.20.00 | Amplifier in the form of a hybrid integrated circuit for the frequency range 20 Hz to 20 000 Hz, contained in a housing the exterior dimensions of which do not exceed 45×80 mm, with not more than 30 connecting pins and bearing:
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| ex 8542.20.00 | Subscriber-connection units (crosspoint switch) with not less than four and not more than 12 switches and an operating voltage of at least 150 V, in the form of a hydrid integrated circuit, contained in a housing whose dimensions do not exceed 92×41 mm, with not more than 94 connecting pins and bearing:
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| ex 8542.20.00 | Infrared receiver with a carrier frequency of not less than 36 kHz and not more than 40 kHz, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×15 mm, with not more than 5 connecting pins and bearing:
|
| ex 8542.20.00 | Filters operating in the frequency ranges between 5 and 11 kHz or 2,2 and 2,5 mHz, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 33×17 mm, with not more than 4 connecting pins and bearing:
|
| ex 8542.20.00 | Opto-electronic receiving device (PINFET receiver) with a wavelength range 1 300—1 600 nanometres, and a speed of not less than 678 megabits per second, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×13×13 mm, with not more than 16 connecting pins, with an attached optical fibre lead (pig-tail), and bearing:
|
| 9002.11.00 | Adjustable lens unit, having a focal length of between 115 mm and 140 mm, a diameter of not less than 120 mm and not more than 130 mm, and comprising a combination of between four and eight glass or methacrylic lenses, each lens coated on at least one side with a magnesium fluoride layer, for use in the manufacture of video projectors (1)… |
Annotations
Footnotes
- f1
-
Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.
- f2
-
Control of the use for this special purpose shall be carried out pursuant to the relevant Community provisions.