# Council Regulation (EC) No 428/2009 of 5 May 2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items (Recast), Division [3C001]: Hetero-epitaxial materials , not specified in 3C507, consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:


a..Silicon (Si);
b..Germanium (Ge);
c..Silicon carbide (SiC); ...
d.."III/V compounds" of gallium or indium.
Note: 3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
e..Gallium oxide (Ga2O3); or
f..Diamond (C);

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Source: https://www.legislation.gov.uk/eur/2009/428/annex/I/division/5/division/3/division/3C001 (the official version)
Page: https://openlegislation.uk/eu-regulation-2009-428/annex-I/division-5/division-3/division-3C001
Contains public sector information licensed under the Open Government Licence v3.0. Source: legislation.gov.uk, The National Archives.