# Council Regulation (EC) No 428/2009 of 5 May 2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items (Recast), Division [3C005]: High resistivity materials as follows:


a..Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C;
b..Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10 000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond on the surface of the "substrate".
N.B.For materials consisting of a “substrate” specified in 3C005 with at least one epitaxial layer, see 3C001 or 3C006.

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Source: https://www.legislation.gov.uk/eur/2009/428/annex/I/division/5/division/3/division/3C005 (the official version)
Page: https://openlegislation.uk/eu-regulation-2009-428/annex-I/division-5/division-3/division-3C005
Contains public sector information licensed under the Open Government Licence v3.0. Source: legislation.gov.uk, The National Archives.