# Commission Delegated Regulation (EU) 2019/2199 of 17 October 2019 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items, Division 3C: Materials

Extent: E+W+S+N.I.

3C001 Hetero-epitaxial materials consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:
a.. Silicon (Si);
b.. Germanium (Ge);
c.. Silicon carbide (SiC); or
d.. "III/V compounds" of gallium or indium.
Note: 3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
3C002 Resist materials as follows and "substrates" coated with the following resists:
a.. Resists designed for semiconductor lithography as follows:
1.. Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
2.. Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;
b.. All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;
c.. Not used;
d.. All resists optimised for surface imaging technologies;
e.. All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.
3C003 Organo-inorganic compounds as follows:
a.. Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %;
b.. Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.
Note: 3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule.
3C004 Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen.
Note: 3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen.
3C005 High resistivity materials as follows:
a.. Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C;
b.. Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10 000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), or aluminium gallium nitride (AlGaN) on the surface of the "substrate".
3C006 Materials, not specified in 3C001, consisting of a "substrate" specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

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Source: https://www.legislation.gov.uk/eur/2019/2199/annex/I/division/5/division/3C (the official version)
Page: https://openlegislation.uk/eu-regulation-2019-2199/annex-I/division-5/division-3C
Contains public sector information licensed under the Open Government Licence v3.0. Source: legislation.gov.uk, The National Archives.