Division Materials

6C002Optical sensor materials as follows:

1. a..

   Elemental tellurium (Te) of purity levels of 99,9995 % or more;

2. b..

   Single crystals (including epitaxial wafers) of any of the following:

   1. 1..

      Cadmium zinc telluride (CdZnTe), with zinc content of less than 6 % by ‘mole fraction’;

   2. 2..

      Cadmium telluride (CdTe) of any purity level; or

   3. 3..

      Mercury cadmium telluride (HgCdTe) of any purity level.

      Technical Note:

      ‘Mole fraction’ is defined as the ratio of moles of ZnTe to the sum of moles of CdTe and ZnTe present in the crystal.

6C004Optical materials as follows:

1. a..

   Zinc selenide (ZnSe) and zinc sulphide (ZnS) "substrate blanks", produced by the chemical vapour deposition process and having any of the following:

   1. 1..

      A volume greater than 100 cm³; or

   2. 2..

      A diameter greater than 80 mm and a thickness of 20 mm or more;

2. b..

   Electro-optic materials and non-linear optical materials, as follows:

   1. 1..

      Potassium titanyl arsenate (KTA) (CAS 59400-80-5);

   2. 2..

      Silver gallium selenide (AgGaSe₂, also known as AGSE) (CAS 12002-67-4);

   3. 3..

      Thallium arsenic selenide (Tl₃AsSe₃, also known as TAS) (CAS 16142-89-5);

   4. 4..

      Zinc germanium phosphide (ZnGeP₂, also known as ZGP, zinc germanium biphosphide or zinc germanium diphosphide); or

   5. 5..

      Gallium selenide (GaSe) (CAS 12024-11-2);

3. c..

   Non-linear optical materials, other than those specified in 6C004.b., having any of the following:

   1. 1..

      Having all of the following:

      1. a..

         Dynamic (also known as non-stationary) third order non-linear susceptibility (χ⁽³⁾, chi 3) of 10^–6 m²/V² or more; and

      2. b..

         Response time of less than 1 ms; or

   2. 2..

      Second order non-linear susceptibility (χ⁽²⁾, chi 2) of 3,3×10^–11 m/V or more;

4. d..

   "Substrate blanks" of silicon carbide or beryllium beryllium (Be/Be) deposited materials, exceeding 300 mm in diameter or major axis length;

5. e..

   Glass, including fused silica, phosphate glass, fluorophosphate glass, zirconium fluoride (ZrF₄) (CAS 7783-64-4) and hafnium fluoride (HfF₄) (CAS 13709-52-9) and having all of the following:

   1. 1..

      A hydroxyl ion (OH-) concentration of less than 5 ppm;

   2. 2..

      Integrated metallic purity levels of less than 1 ppm; and

   3. 3..

      High homogeneity (index of refraction variance) less than 5 × 10^–6;

6. f..

   Synthetically produced diamond material with an absorption of less than 10^–5 cm^–1 for wavelengths exceeding 200 nm but not exceeding 14 000 nm.

6C005"Laser" materials as follows:

1. a..

   Synthetic crystalline "laser" host material in unfinished form as follows:

   1. 1..

      Titanium doped sapphire;

   2. 2..

      Not used.

2. b..

   Rare-earth-metal doped double-clad fibres having any of the following:

   1. 1..

      Nominal "laser" wavelength of 975 nm to 1 150 nm and having all of the following:

      1. a..

         Average core diameter equal to or greater than 25 μm; and

      2. b..

         Core ‘Numerical Aperture’ (‘NA’) less than 0,065; or

         Note:

         6C005.b.1. does not control double-clad fibres having an inner glass cladding diameter exceeding 150 μm and not exceeding 300 μm.

   2. 2..

      Nominal "laser" wavelength exceeding 1 530 nm and having all of the following:

      1. a..

         Average core diameter equal to or greater than 20 μm; and

      2. b..

         Core ‘Numerical Aperture’ (‘NA’) less than 0,1.

   Technical Notes:

   1.

   For the purposes of 6C005.b., the core ‘Numerical Aperture’ (‘NA’) is measured at the emission wavelengths of the fibre.

   2.

   6C005.b. includes fibres assembled with end caps.