Chapter GROUP 3F
| Note: Goods specified in the heads of this Group may also be specified in Group 1 of this Part of this Schedule. Electronic equipment including Communications, radar, and Scientific Instruments and apparatus | ||||||||
| PL7004 | Electrical or electronic equipment, whether or not separately specified in an entry in this Schedule, in respect of which a certificate has been issued to the knowledge of the exporter by or on behalf of the Secretary of State to the effect that the equipment to which the certificate relates meets or has been modified or designed to meeet government standards concerned with the limitation of compromising electromagnetic radiation | W | ||||||
| IL1501 | Navigation, direction finding, radar and airborne communication equipment and technology, the following—
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(1) designed to operate at frequencies greater than 156 MHz | C | |||||||
(2) incorporating facilities for— | ||||||||
(i) the rapid selection of more than 200 channels per equipment; or | C | |||||||
(ii) equipment using frequency synthesis techniques | C | |||||||
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(3) rated for continuous operation over a range of ambient temperatures extending from below−55°C to above +55°C | C | |||||||
(4) designed for modulating methods employing any form of digital modulation using time and frequency redundancy such as Quantized Frequency Modulation (QFM) | C | |||||||
| except equipment which does not have the characteristics r4ferred to in sub-head (a)(4) above and
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(b) Navigation and direction finding equipment and technology, the following: and specially designed components and specially designed ODMA software and specialised testing, calibrating and training/simulating equipment therefor— (1) airborn navigation equipment and direction finding equipment and technology, the following— | ||||||||
(i) equipment designed to make use of Doppler frequency phenomena, except navigation equipment to be installed in civil aircraft or civil helicopters, and which is normal standard equipment of a type installed in civil aircraft or civil helicopters | C | |||||||
(ia) technology for navigation equipment using Doppler frequency phenomena | D | |||||||
(ii) equipment utilising the constant velocity or the rectilinear propagation charcteristics of electro-magnetic waves having frequency less than 4 × 1014hz (0.75 microns) | C | |||||||
(a standard commercial airborne equipment needed to equip civil aircraft or civil helicopters or as normal standard equipment incorporated in civil aircraft or civil helicopters being exported for civil commercial use provided such equipment is in conformity with ICAO standards and assures no function exceeding those resulting from such standards, is not designed to use satellite-broadcasted navigation signals and is not designed to make use of hyperbolic grids at frequencies greater than 3 MHz;
(b Loran C equipment having all of the following characteristics: (a it has been in normal civil use for a period of more than one year; (b it is standard commercial equipment; (1 needed to equip civil aircraft or civil helicopters; or (2 incorporated in civil aircraft or civil helicopters; (c it is equivalent in all characteristics and performances to srtandard equipment of aircraft not specified in entry IL1460 in Group 3E; (d it is in conformity wityh ICAO standards; (e itis not designed to make use of hyperbolic grids at frequencies higher than 3MHz; (f it does not contain electronic equipment which: (1 can compute the position of the aircraft in one coordinate system when furnished position information in another coordinate system (namely coordinate conversion equipment); (2 is specified in entry IL1565 in Group 3G and (3 has been in normal civil use for a period of less than one year
(c direction finding equipment specially designed for search and rescue purposes and operating at a frequency of 121.5 MHz or 243 MHz, and personal locator beacons operating in this form (which may also have an additional channel selectable for voice mode only); (iii) radio altimeters, the following— | ||||||||
(a pulse modulated | C | |||||||
(b frequency modulated having a displayed electrical output accuracy better than ±0.914 m over the range bertween 0 and 30.4 m or better than a7plusm;3% above 30.4 m | C | |||||||
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(c frequency modulated which have been in normal civil use for less than one year | C | |||||||
(iiia) Technology for radio altimeters referred to in sub-head (b)(1)(ii)(b) above even when excluded from that sub-head | D | |||||||
(iv) direction finding equipment operating at frequencies greater tha 5MHz | C | |||||||
(v) equipment rated for continuous operation over a range of ambient temperatures extending from below −55°C to above +55°C | C | |||||||
(2) Ground and marine equipment for use with airborne navigation equipment utilising the constant velocity or the rectilinear propagation characteristics of electromagnetic waves having a frequency less than 4 × 1014Hz (0.75 micron) | C | |||||||
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(3) ground and marine direction finding equipment operating at frequencies greater than 30 MHz | C | |||||||
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(4) timing receivers whose only function is automatically providing time derived from satellite signals to within 1 millisecond of Universal Coordinate time (UCT) or better | C | |||||||
(5) ground or marine navigation and geodetic positioning systems designed for use with satellite-provided timing positioning or navigation information | C | |||||||
(1 capable only of processing the L1 channel (also called the standard Positioning Service (SPS) channel); (2 capable of only the Short-Term Code (Coarse Acquisition Code (C/A) code) with short term generation cycle; (3 no decryption capabilities; (4 including no cesium beam standards; and (5 including no null steerable antennae | ||||||||
(c) Radar equipment and specially designed components, specialised testing, calibrating and training/simulating equipment and specially designed software therefor, the following— | ||||||||
(1) airborne radar equipment | C | |||||||
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(2) ground and marine radar equipment, the following— | ||||||||
(i) equipment operating at a frequency not in normal civil use or at a frequency of more than 10.5 GHz | C | |||||||
(ii) equipment operating at a frequency of less than 1.5 GHz and having a peak output power from the transmitter greater than 2.5 MW; or operating at a frequency within the range of 1.5 to 3.5 GHz and having a peak output power from the transmitter greater than 1.5 MW; or operating at a frequency within the range of 3.5 to 6 GHz and having a peak output power from the transmitter greater than 1 MW; or operating at a frequency within the range of 6 to 10 GHz and having a peak output power from the transmitter greater than 500 kW | C | |||||||
(iii) equipment operating at a frequency of less than 3.5 GHz and having an 80 per cent or better probability of detection for a 10 sq.m. target at a free space range of 250 nautical miles; or operating at a frequency within the range of 3.5 to 10.5 GHz and having an 80 per cent or better probability of detection for 10 sq.m. target at a free space range of 100 nautical miles | C | |||||||
(iv) equipment utilising other than pulse modulation with a constant or staggered pulse repetition frequency, in which the carrier frequency of the transmitted signal is not changed deliberately between groups of pulses, from pulse to pulse, or within a single pulse; | C | |||||||
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(v) equipment utilising a Doppler technique for any purposes other than M.T.I. systems using a conventional double or triple pulse delay line cancellation technique | C | |||||||
(vi) equipment including any digital signal processing techniques used for automatic target tracking, or having a facility for electronic tracking | C | |||||||
(vii) equipment including signal processing techniques (other than those specified in sub head (c)(2)(vi) above, which have been in normal civil use for a period of less than two years) | C | |||||||
(viii) equipment ground radar, having been in commercial use for a period of less than one year | C | |||||||
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| The following shall be excluded from this entry—
In this entry the terms “civil aircraft” and “civil helicopters” include only those types of civil aircraft and civil helicopters which are listed by designation in published airworthiness certification lists by any civil aviation authority to fly commercial civil internal and external routes or for normal civil, private or business use. | ||||||||
| IL1502 | Communication, detection or tracking equipment of a kind using ultra-violet radiation, infrared radiation or ultrasonic waves, and specially designed components and specially designed software therefor | C | ||||||
| except—
Note: This entry includes infra red or ultra-violet sensing devices not specified in Group 1 of this Schedule and which contain image intensifiers specified in entry IL1555 in this Group. | ||||||||
| IL1510 | Marine or terrestrial acoustic or ultrasonic systems or equipment specially designed for positioning surface vessels or underwater vehicles, or for detecting or locating underwater or subterranean objects or features and specially designed components of such systems or equipment, including but not limited to hydrophones, transducers, beacons, towed hydrophone arrays, beamformers and geophones and specially designed software therefor | C | ||||||
| except—
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| IL1514 | Pulse modulators capable of providing electric impulses of peak power exceeding 20 MW or of a duration of less than 0.1 microsecond, or with a duty cycle in excess of 0.005; and pulse transformer, pulse-forming equipment or delay lines being specially designed components for such modulators | C | ||||||
| IL1516 | Receivers, the following: and specially designed components, accessories and specially designed software therefor— | |||||||
(a) Panoramic radio receivers (which search or scan automatically a part of the electromagnetic spectrum and indicate or identify the received signals) except ancillary equipment for commercial receivers with which the frequency searched does not exceed a bandwidth of 20 MHz or does not incorporate a raster or storage display capability | C | |||||||
(b) Digitally-controlled radio receivers, whether or not computer controlled, which search or scan automatically a part of the electromagnetic spectrum, in which the switching operation takes less than 10 milliseconds, and which indicate or identify the received signals, except non-ruggedized, digitally-controlled pre-set type radio receivers designed for use in civil communications which have 200 selective channels or fewer | C | |||||||
(c) Receivers for spread spectrum and frequency agile systems having a total transmitted bandwidth which is— (1) 100 or more items greater than the bandwidth of any one information channel; and | ||||||||
(2) in excess of 50 kHz | C | |||||||
(d) Receivers which incorporate digital signal processing | C | |||||||
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| In this entry—
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| IL1517 | Radio transmitters, the following: and specially designed components therefor— | |||||||
(a) Transmitters or transmitter-amplifiers designed to operate at output frequencies greater than 960 MHz | C | |||||||
(b) Transmitters or transmitter-amplifiers designed to provide any of the following features— | ||||||||
(1) any system of pulse modulation (this does not include amplitude, frequency- or phase-modulated televisions or telegraphic transmitters or pulse-width modulated sound broadcasting transmitters)— | C | |||||||
(2) rated for operation over a range of ambient temperatures extending from below −40°C to above +60°C | C | |||||||
(c) Transmitters for spread spectrum and frequency agile systems having a total transmitted bandwidth which is— (1) 100 or more times greater than the bandwidth of any one information channel; and (2) in excess of 50 kHz; | ||||||||
| There shall be excluded from this entry transmitters or transmitter-amplifiers, or systems containing such equipment, accessories and sub-assemblies therefor, with any of the following characteristics—
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| PL7003 | Burst transmitters and associated receiving equipment (except simple on-line morse or other data signal convertors or standard items of ADP equipment) and specialised assemblies, sub-assemblies and components therefor | W | ||||||
| In this entry a “burst transmitter” is any electronic equipment or device for use with radio or other communications systems, whether part of a transmitter or modulation device or ancillary to it, which has a capability to accept and store data (telegraphic, speech or other) and to transmit these at transmission speeds/bit rates which are multiples of the input keying speed/bit rates, the purpose or effect of which is to reduce total message duration time and thus to evade detection by other than the intended recipient. | ||||||||
| IL1518 | Telemetering and telecontrol equipment suitable for use with aircraft (piloted or pilotless), space vehicles or weapons (guided or unguided), and specially designed test equipment therefor | C | ||||||
| except equipment specially designed to be used for remote control of toys such as model planes and boats and having electric field strength of not more than 200 microvolts per metre at a distance of 500 metres. | ||||||||
| IL1519 | Telecommunication transmission equipment and measuring and test equipment, the following: and specially designed components and specifically designed software therefor—
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(a) 45 million bits/s (including when designed for underwater use); or | C | |||||||
(b) 8.5 million bit/s for stored programme controlled digital crossconnection equipment | C | |||||||
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(2) designed for a data signalling rate which exceeds— | ||||||||
(a) 1,200 bit/s when: | C | |||||||
(i employing an automatic error detection and correction system; and (ii retransmission is not required for correction; | ||||||||
(b) 9,600 bit/s when using the bandwidth of one voice channel or | C | |||||||
(c) 64,000 bit/s when using baseband | C | |||||||
(b) Electronic measuring or test equipment specially designed for the equipment specified in the sub-head (a)(1) above | C | |||||||
| except—
In this entry—
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| IL1520 | Radio relay communication equipment, specially designed test equipment and specially designed software, the following and specially designed components and accessories therefor— | |||||||
(a) Radio relay communication equipment designed for use at frequencies exceeding 960MHz excluding technology excluded from head (c) below | C | |||||||
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(b) Stand-alone radio transmission media simulators/channel estimators and specially designed software therefor, specially designed for testing equipment specified in head (a) above, except those in which the adjustments are only made manually | C | |||||||
(c) Technology for equipment specified in head (a) above, employing quadrature amplitude-modulation, (QAM) techniques | D | |||||||
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(d) Technology for equipment specified in the exception (vi) to head (a) above | D | |||||||
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| There shall be excluded from this entry—
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| PL7008 | Tropospheric scatter communication equipment using analogue or digital modulation techniques | L, I | ||||||
| IL1521 | Solid-state amplifiers the following: and specially designed components and accessories therefor— | |||||||
(a) Amplifiers exceeding a maximunm output power of 2 kW at operating frequencies between 10 and 35 MHz inclusive | C | |||||||
(b) Amplifiers exceeding a maximum output power of 50 W at operating frequencies between 35 and 400 MHz | C | |||||||
(c) Amplifiers where the product of the maximum output power times the maximum operating frequency is more than 2 × 1010 WHz at operating frequencies above 400 MHz | C | |||||||
| except solid state amplifiers which—
In this entry “bandwidth” means the range of freuencies over which the power amplification does not drop to less than one half of its maximum value. | ||||||||
| IL1522 | Lasers and equipment containing lasers, the following— | |||||||
(a) Lasers, and specially designed components therefor, including amplification stages | C | |||||||
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(b) Equipment containing lasers, and specially designed components therefor | C | |||||||
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(c) Measuring systems which have both of the following characteristics | C | |||||||
(i) contain a laser; and (ii) maintain for at least 48 hours, over a termperature range of ±10K around a standard temperature and at a standard pressure— (1) a resolution over their full scale of ±0.1 micrometre or better; and (2) an accuracy of ±1 part per million or better; | ||||||||
(d) Particle measuring systems employing helium-neon lasers, designed for measuring particle size and concentration in gases, which have both of the following characteristics— | C | |||||||
(i) capable of measuring particle sizes of 0.3 micrometre or less; and (ii) capable of characterising Class 10 clean air or better. | ||||||||
| In this entry—
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| IL1526 | Optical fibres, optical cables and other cables and components and accessories, the following— | |||||||
(a) Unarmoured or single-armoured ocean cable having an attenuation of 1.62 dB/km (3.0 kB per nautical mile) or less, measured at a frequency of 600 kHz | C | |||||||
(b) Optical-fibre communication cable or optical fibres therefor, having any of the following characteristics— | ||||||||
(1) the optical fibre is designed for single mode light propagation | C | |||||||
(2) the optical fibre— (i) is designed for multimode light propagation; and | ||||||||
(ii) has an attenuation of less than 1.0 kB/km at a wavelength of 1300 nm | C | |||||||
(3) the optical fibre is capable of withstanding a proof test tensile strength of 1.1 × 109 N/m2 or more | C | |||||||
(4) the optical fibre is specially designed for underwater use or | C | |||||||
(5) the optical fibre is specially designed to be insensitive to nuclear radiation | C | |||||||
(c) Optical fibres for sensing purposes, having any of the following characteristics— | ||||||||
(1) specially fabricated either compositionally or structurally, or modified by coating to be acoustically, thermally, inertially, electromagnetically or nuclear radiation sensitive | C | |||||||
(2) modified structurally or by coating to have either— (i) a beat length of more than 50 cm (low birefringence), except if designed for operation at wavelengths of less than 650 nm; or | ||||||||
(ii) a beat length of less than 5 cm (high birefringence) | C | |||||||
(d) Secure communication cable, being either coaxial or multiconductor communication cable protected by mechanical or electrical means from physical damage or intrusion in such a manner that communications security is maintained between terminals without the necessity for encryption | C | |||||||
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(e) Components and accessories specially designed for the optical fibres or cable specified in this entry including fibre-optic bulkhead or hull penetration connectors impervious to leakage at any depth for use in ships or vessels, and multiport fibre-optic couplers (including T, star, bidirectional and wavelength division multiplexing and demultiplexing couplers) | C | |||||||
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| In this entry—
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| IL1527 | Cryptographic equipment designed to ensure secrecy of communications (such as telegraphy, telephony, facsimile, video, and data communications) or of stored information; and specially designed components therefor, and software controlling or computers performing the functions of such cryptographic equipment | C | ||||||
| except simple cryptographic devices or equipment ensuring only the privacy of communications, the following—
Note 1. This entry includes video systems which, for secrecy purposes, use digital techniques (conversion of an analogue, ie video or facsimile signal into a digital signal). Note 2. Digital computers and digital differential analysers (incremental computers) designed or modified for, or combined with, any cypher machines, cryptographic equipment devices or techniques including software, microprogramme control (firmware). | ||||||||
| IL1529 | Electronic equipment and instruments for testing, measuring (e.g. time interval measurement), calibrating or counting, or for microprocessor/microcomputer development, the following: and specially designed software therefor— (a) Equipment, the following— (1) equipment designed as reference frequency standards for laboratory use and having either of the following characteristics— | |||||||
(i) a long-term drift (ageing) over 24 hours or more of 1 part in 1010 or better | C | |||||||
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(ii) a short-term drift (stability) over a period from1 to 100 seconds of 1 part in 1012 or better | C | |||||||
(2) equipment containing frequency standards having any of the following characteristics— | ||||||||
(i) designed for mobile use and having a long-term drift (ageing) over 24 hours or more of 1 part in 109 or better | C | |||||||
(ii) designed for fixed ground use and having a long term drift (ageing) over 24 hours or more of 5 parts in 1010 or better or | C | |||||||
(iii) a short-term drift (stability) over a period from 1 to 100 seconds of 1 part in 1012 or better | C | |||||||
(b) Instruments, the following— | ||||||||
(1) instruments designed for use at frequencies exceeding 18 GHz | C | |||||||
(2) comb frequency generators designed and rated for use at frequencies exceeding 12.5 GHz | C | |||||||
(3) instruments designed for use at frequencies exceeding 1 GHz, the following— | ||||||||
(i) swept-frequency network analyzers for the automatic measurement of complex equivalent circuit parameters over a range of frequencies | C | |||||||
(ii) specially calibrated microwave instrumentation receivers capable of measuring amplitude and phase simultaneously | C | |||||||
(iii) automatic frequency (heterodyne) converters and transfer oscillators | C | |||||||
(iv) instruments in which the functions can be controlled by the injection of digitally-coded electrical signals from an external source | C | |||||||
(4) instruments having both of the following characteristics— | C | |||||||
(i) user-accissible programmability, and (ii) a user-alterable programme and data storage of more than 65,536 bit
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(5) test instruments with user-accessibile programmability and having any of the following characteristics— | ||||||||
(i) specially designed to examine or compare one or more binary coded streams of electrical signals | C | |||||||
(ii) a maximum sampling rate of more than 100 MHz | C | |||||||
(iii) a maximum of more than 32 channels excluding a maximum of 6 qualifier channels | C | |||||||
(iv) a figure of merit of more than 400 | C | |||||||
(v) a capability of state coupled timing analysis (ie synchronized mode state/timing analysis) | C | |||||||
(vi) a total acquisition memory for word storage exceeding 32,768 bit with an acquisition memory for bit storage per channel exceeding 1,024 bit; | C | |||||||
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(vii) a total acquisition memory for word storage exceeding 16,384 bit with an acquisition memory for bit storage per channel exceeding 2,024 bit | C | |||||||
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(6) microprocessor or microcomputer development instruments or systems, capable of developing software for, or capable of, programming microcircuits specified in the entry IL 1564 in this Group | C | |||||||
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(c) Digital counters, the following— | ||||||||
(1) those capable of counting successive input signals with less than 5 nanoseconds time difference without prescaling (digital division) of the input signal | C | |||||||
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(2) those employing prescaling of the input signal, in which the prescaler is capable of resolving successive input signals with less than 1 nanosecond time difference | C | |||||||
(3) those capable of measuring burst frequencies exceeding 100 MHz for a burst duration of less than 5 milliseconds | C | |||||||
(d) Time interval measuring equipment employing digital techniques, capable of measuring time intervals of less than 5 nanoseconds on a single shot basis | C | |||||||
(e) Testing equipment rated to maintain specified operating data when operting over a range of ambient temperatures from below −25°C to above +55°C | C | |||||||
(f) Digital voltage measuring apparatus, with or without electrical outputs, irrespective of the physical units in which calibrated, with a reading speed (from zero to the measured value) faster than 25 accesses per second and having any of the following characteristics— | ||||||||
(1) a digital resolution at all points on the scale greater than one part in 200,000 | C | |||||||
(2) an accuracy, measured without reference to an external standard, better than 1 part in 50,000 (0.002%) of reading over an ambinet temperature range of ±5°C or more, or a stability better than 10−6 of reading over a period of 24 hours or more | C | |||||||
(3) capable of more than 500 independent measurements per second | C | |||||||
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(g) Transient recorders, utilizing analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single input signals at successive intervals of less than 50 nanoseconds | C | |||||||
| In this entry— a “family” means a group of microprocessor or microcomputer microcircuits which have:
“figure of merit” means the product of the maximum sampling rate in MHz and the number of input channels excluding qualifier channels; “manufacturer” means the individual or organisation designing the instrument for the intended application (in contrast to an individual or organisation merely programming an instrument at, or in accordance with, a user’s request); “comb frequency generators” means devices which generate a spectrum of harmonics; “swept-frequency network analyzers” means the automatic measurement of equivalent circuit parameters over a range of frequencies. This involves swept-frequency measurement techniques but not CW point-to-point measurements; “amplitude and phase receivers” means instruments capable of measuring the amplitude of a microwave signal or the amplitude of two microwave signals and the relative phase between them. (The principal application of these instruments is the measurement of near and far zone phase and amplitude antenna patterns. They can also be used for measurement of microwave device and components characteristics. In general, they are more sophisticated and sensitive (better than −100 dBm) than phase and impedance measuring instruments such as RF vector impedance meters and vector voltmeters. They also feature wide dynamic range (80 dB) and very good linearity (approximately ±0.25 kB).); “frequency (heterodyne) converters” means instruments which down convert an unknown frequency by mixing with an accurately known frequency. The accurately known frequency is developed by multiplication of a crystal-derived reference which is passed through a harmonic generator. By mixing the appropriate harmonic and the unknown frequencies, an accurate third frequency results; “transfer oscillators” means instruments which can be based on the property of harmonic mixing. Differences exist in that a local oscillator is utilized whereas a crystal-derived reference frequency is utilized in the case of heterodyne converters. The unknown frequency is mixed with the local oscillator (LO) and the two are phase-locked by tuning the LO. The LO can then be measured by a counter; “user-accessible programmability” means the facility allowing a user to insert, modify or replace programmes by means other than:
“burst frequency measurement” counters contain special gating circuits which start only when the input signal is present and stop counting at the completion of the burst; “pulse frequency profiling” means the capability of measuring the changes of frequency (or phase) within a pulse as a function of time; such changes in frequency would be present in a transmitted pulse-compression radar pulse (“chirp radar”). This profiling may be achieved by internal or external gating. Pulse frequency profiling does not include frequency modulation tolerance while it is being frequency modulated. | ||||||||
| IL1531 | Frequency synthesizers and equipment containing such frequency synthesizers, and specially designed components and accessories therefor, the following— | |||||||
(a) Frequency synthesizers containing frequency standards specified in head (a) in the entry IL 1529 in this Group or temperature-compensated crystal oscillators specified in head (c) to the entry IL 1587 in Group 3G | C | |||||||
(b) Instrument frequency synthesizers and synthesized signal generators, and specially designed components and accessories therefor, designed for ground use, producing output frequencies whose accuracy and short and long-term stability are controlled by, derived from, or disciplined by the input frequency or internal master standard frequency, and having any of the following characteristics— | ||||||||
(1) a maximum synthesized output frequency of more than 550 MHz | C | |||||||
(2) any of the following noise characteristics— | ||||||||
(i) a single sideband (SSB) phase noise better than −120 dBc/Hz when measured at a 20 kHz offset from the carrier frequency | C | |||||||
(ii) a single sideband (SSB) phase noise better than −106 dBc/Hz when measured at a 100 Hz offset from the carrier frequency | C | |||||||
(iii) an integrated phase noise better than −60 dBc/Hz referred to a 30 kHz band centred on the carrier and excluding ths 1 Hz band centred on this carrier or | C | |||||||
(iv) an integrated AM phase noise better than −70 dB/Hz referred to a 30 kHz band centred on the carrier and excluding the 1 Hz band centred on this carrier | C | |||||||
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(3) electrically programmable in frequency (in that the output frequency can be controlled or selected by the injection of digitally coded electrical signals from an external control source) with a frequency switching time of less than 10 milliseconds | C | |||||||
(4) electrically programmable in phase (in that the phase of the output frequency can be varied relative to the internal or external reference standard, or selected in accordance with an externally supplied code or signal with a switching speed from one selected phase value to another of less than 10 milliseconds) except equipment incorporating pre-emphasis networks for frequency modulation | C | |||||||
(5) having a level of spurious components in the output, measured relative to the selected output frequency better than; | ||||||||
(i) −60 dB harmonic; or | C | |||||||
(ii) −92 kB non-harmonic | C | |||||||
(6) having more than three different selected synthesized output frequencies available simultaneously from one or more outputs | C | |||||||
(7) with facilities for pulse modulation of the output frequency | C | |||||||
(c) Airborne communication equipment using frequency synthesizers, the following: and specially designed components and accessories therefor— | ||||||||
(1) equipment designed to receive or transmit frequencies greater than 156 MHz | C | |||||||
(2) equipment incorporating facilities for the rapid selection of more than 200 channels per equipment, except equipment operating in the frequency range of 108 to 137 MHz incorporating facilities for the rapid selection of 760 channels or fewer at not less than 25 kHz channel spacing, which have been in normal civil use for at least one year | C | |||||||
(3) equipment with a frequency switching time of less than 10 milliseconds | C | |||||||
(4) frequency synthesizers, designed for airborne communication equipment, whether supplied separately or with the said equipment, exceeding any of the parameters referred to in head (b) above | C | |||||||
(d) Digitally-controlled radio receivers, whether or not computer-controlled, which search or scan automatically a part of the electromagnetic spectrum, using frequency synthesizers, the following and specially designed components and accessories therefor— | ||||||||
(1) digitally-controlled receivers in which the switching operation takes less than 10 milliseconds, (except non-ruggedized digitally-controlled preset type radio receivers designed for use in civil communications, which have 200 selective channels or fewer) | C | |||||||
(2) frequency synthesizers designed for digitally controlled radio receivers whether supplied separately or with the said receiver, exceeding any of the parameters in head (b) above | C | |||||||
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(e) Radio transmitters incorporating transmitter drive units, exciters and master oscillators using frequency synthesis, the following: and specially designed components and accessories therefor— | ||||||||
(1) those having an output frequency of up to 32 MHz with a frequency resolution of better than 10 Hz and with a frequency switching time of less than 10 milliseconds | C | |||||||
(2) those having an output frequency from 32 MHz to 235 MHz with a frequency resolution of better than 250 Hz and with a frequency switching time of less than 10 milliseconds | C | |||||||
(3) those having an output frequency of more than 235 MHz | C | |||||||
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(4) those having more than three different selected synthesized output frequencies available simultaneously from one or more outputs | C | |||||||
(5) those with facilities for pulse modulation of the output frequency of the transmitter or of the incorporated frequency synthesizer | C | |||||||
(6) those frequency synthesizers designed for the above equipment, whether supplied separately or with the said equipment, exceeding any of the parameters referred to in head (b) above | C | |||||||
| There shall be excluded from this entry— equipment in which the output frequency is produced by the addition or subtraction of two or more crystal oscillator frequencies which may be followed by multiplication of the result. In this entry— “frequency synthesiser” means any kind of frequency source or signal generator, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies; “frequency switching time” means the maximum time (ie delay), when switched from one selected output frequency to another selected output frequency, to reach:
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| PL7013 | Transceivers having an output frequency of up to 32 MHz and using frequency synthesis with a frequency resolution of 10 Hz or better | X | ||||||
| In this entry “transceiver” means equipment which comprises a radio transmitter and a radio receiver and which uses part or all of the same circuitry in both transmit and receive modes. | ||||||||
| IL1532 | Precision linear and angular measuring systems, the following: and specifically designed components and specially designed ODMA software therefor—
| |||||||
(1) contact type measuring systems having all of the following characteristics— | C | |||||||
(i) range equal to or less than 5 mm; (ii) linearity equal to or better than ±0.1 per cent; and; (iii) drift equal to or less than 0.1 per cent per day at a standard ambient test room temperature ±1K; | ||||||||
(2) linear voltage differential transformers with no compensation networks and having either of the following characteristics— | ||||||||
(i) range equal to or less than 5 mm | C | |||||||
| ||||||||
(ii) linearity equal to or better than ±0.2 per cent | C | |||||||
(b) Linear measuring machines having all of the following characteristics— | C | |||||||
(1) two or more axes; (2) range in any axis greater than 200 mm; (3) except optical comparators.accuracy (including any compensation) better than ±0.0008 mm per any 300 mm segment of travel; | ||||||||
(c) Angular measuring systems having an accuracy equal to or better than ±1 second of arc | C | |||||||
| ||||||||
(d) Non-contact type measuring systems having, at a standard ambient test room temperature ±1K, either of the following pairs of characteristics— | ||||||||
(1) effective probe measurement diameter less than 0.5 mm and drift less than 0.5 per cent per day | C | |||||||
| ||||||||
(2) linearity better than ±0.3 per cent and drift less than 0.5 per cent per day | C | |||||||
(e) Contact type measuring systems specially designed for combined, simultaneous linear-angular inspection of hemishells, having both the following characteristics— | C | |||||||
(1) linear accuracy equal to or better than ±0.005 mm in any 5 mm; and (2) angular accuracy equal to or better than ±1 minute in any 90° of arc. | ||||||||
| In this entry—
| ||||||||
| IL1533 | Signal analysers (including spectrum analysers), having any of the following characteristics: and specially designed components, accessories and specially designed ODMA software therefor— | |||||||
(a) Non-programmable and capable of operating at frequencies over 12.5 GHz | C | |||||||
(b) Programmable and capable of operating at frequencies over 1 GHz | C | |||||||
(c) Having a display bandwidth in excess of 125 MHz | C | |||||||
(d) Including a scanning preselector for analyzing frequencies of more than 1 GHz | C | |||||||
(e) Incorporating a tracking signal generator for analyzing frequencies of more than 1 GHz | C | |||||||
(f) Radio frequency analysis having an overall display dynamic range of better than 80 dB | C | |||||||
(g) Employing time compression of the input signal | C | |||||||
(h) Employing fast fourier Transform techniques | C | |||||||
| ||||||||
| IL1534 | Flatbed microdensitometers (except cathode-ray types), having any of the following characteristics: and specially designed components therefor— | |||||||
(a) A recording or scanning rate exceeding 5,000 data points per second | C | |||||||
(b) A figure of merit better (less) than 0.1, defined as the product of the density resolution (expressed in density units) and the spatial resolution (expressed in micrometres) | C | |||||||
| ||||||||
(c) An optical density range greater than 0 to 4 | C | |||||||
| Note: Density resolution expressed in density units is measured over the optical density range of the instrument. | ||||||||
| IL1537 | Microwave (including millimetric wave) equipment, including parametric amplifiers capable of operating at frequencies over 1 GHz the following: (other than microwave equipment specified in the entries IL1501, IL1517, IL1520 and IL1529 in this Group)— | |||||||
(a) Rigid and flexible waveguides designed for use at frequencies in excess of 18 GHz | C | |||||||
(b) Waveguides having a bandwidth ratio greater than 1.7:1 | C | |||||||
(c) Waveguide components, the following— | ||||||||
(1) directional couplers having a bandwidth ratio greater than 1.7:1 and directivity over the band of 20 dB or more | C | |||||||
(2) rotary joints capable of transmitting more than one isolated channel or having a bandwidth greater than 5 per cent of the centre mean frequency, except those used in air traffic control equipment carrying combinations of frequencies suitable for secondary surveillance radar antennae co-mounted on a primary radar antenna and which do not have a bandwidth exceeding 5 per cent of the centre mean frequency | C | |||||||
(3) magnetic, including gyro-magnetic, waveguide components | C | |||||||
(4) diode waveguide components using diodes specified in the entry IL1544 in this Group | C | |||||||
(d) Transverse electromagnetic mode (TEM) devices the following— | ||||||||
(1) those using magnetic, including gyro-magnetic, properties; | C | |||||||
| ||||||||
(2) those using diodes specified in the entry IL1544 in this Group | C | |||||||
(e) Transmit Receive (TR) and anti-TR) tubes and specially designed components therefor, except those designed for use in waveguides and which are in normal civil use for ground marine radar and having any of the following characteristics— | C | |||||||
(i) they operate at a peak power not exceeding 3 MW and at a frequency of 1.5 GHz or less; (ii) they operatre at a peak power not exceeding 1.2 MW and at a frequency over the range of 1.5 to 6 GHz; (iii) they operate at a peak power not exceeding 300 kW and at a frequency over the range of 6 GHz to 10.5 GHz. | ||||||||
(f) Assemblies and sub-assemblies in which the isolating base material functions as a dielectric (as used in stripline, microstrip, or slotline) except for those items specifically designed for use in civil television systems to meet ITU standards and using as an isolating material paper base phenolics, glass cloth melamine, glass cloth epoxy resin, polyethylene terephthalate or other isolating material with an operating temperature not exceeding 150°C | C | |||||||
(g) Phased array antennae and sub-assemblies, designed to permit electronic control of beam shaping and pointing and specially designed components therefor including but not limited to duplexers, phase shifters and associated high-speed diode switches | C | |||||||
| ||||||||
(h) Other antennae specially designed for operation at frequencies above 30 GHz having a diameter of less than 1 metre, and specially designed components therefor | C | |||||||
(i) Microwave assemblies and sub-assemblies capable of being used at frequencies above 3 GHz and having circuits fabricated by the same processes used in integrated circuit technology, which include active circuit elements | C | |||||||
(j) Microwave assemblies and sub-assembles which contain band-pass or band-stop filters and are capable of operating at 3 GHz or greater | C | |||||||
| ||||||||
(k) Amplifiers | C | |||||||
| ||||||||
(l) Modulators using PIN (positive-intrinsic-negative) transistor technology | C | |||||||
| In this entry “simple educational devices” are devices designed for use in teaching basic scientific principles and demonstrating the operation of those principles in educational institutions. | ||||||||
| IL1541 | Cathode-ray tubes having any of the following characteristics— | |||||||
(a) A resolving power of 32 lines per mm or more, using the shrinking raster method of measurement | C | |||||||
(b) With travelling wave or distributed deflection structure using delay lines, or incorporating other techniques to minimise mismatch of fast phenomena signals to the deflection structure, except when using segmented plate (sectioned Y-plate) structure | C | |||||||
(c) Incorporating microchannel-plate electron multipliers; | C | |||||||
| ||||||||
(d) Technology for the design or production of microchannel electron multipliers specified in head (c) above | D | |||||||
| IL1542 | Cold cathode tubes and switches, the following— | |||||||
(a) Triggered spark-gaps, having an anode delay time of 15 microseconds or less and rated for a peak current of 3,000 A or more; specially designed parts therefor, and equipment incorporating such devices except cold cathode relay tubes or decade counter tubes | C | |||||||
(b) Cold cathode tubes (other than ignitrons) whether gas-filled or not, operating in a manner similar to a spark gap, containing three or more electrodes and having all the following characteristics— | C | |||||||
(1) rated for an anode peak voltage of 2,500 volts or more; (2) rated for peak currents of 100A or more; (3) having an anode delay time of 10 microseconds or less; and (4) having an envelope diameter of less than 25.4 mm. | ||||||||
| In this entry “triggered spark-gaps” are tubes with a structure consisting of two opposed anodes with shapes resembling flattened hemispheres, and with one or more triggering probes placed approximately in the centre of one anode. The structure is sealed and contains a mixture of gases, principally nitrogen, under less than atmospheric pressure. | ||||||||
| IL1544 | Semiconductor diodes, the following: and dice and wafers therefor— | |||||||
(a) Semiconductor diodes, designed or rated for use at input or output frequencies exceeding 12.5 GHz | C | |||||||
(b) Mixer and detector diodes designed or rated for use at input or output frequencies greater than 3 GHz | C | |||||||
| ||||||||
(c) Oscillator and amplifier devices such as Gunn, Impatt, Trapatt, TED and LSA, including those used for the direct conversion of dc to rf power, designed or rated for use at either— | ||||||||
(1) output frequencies above 1 GHz but not exceeding 4 GHz with a peak power more than 2 W or a maximum CW power more than 200 mW | C | |||||||
| ||||||||
(2) output frequencies above 4 GHz but not exceeding 12.5 GHz with a peak power more than 1 W or a maximum CW power more than 100 mW | C | |||||||
(d) Voltage variable capacitance diodes designed or rated for use at input or output frequencies greater than 1.6 GHz | C | |||||||
(e) Fast recovery diodes, the following— | ||||||||
(1) having a rated maximum reverse recovery time of less than 1 nanosecond | C | |||||||
(2) having both a rated forward rectified current over 5 A and a rated maximum reverse recovery time of less than 20 nanoseconds | C | |||||||
(f) PIN diodes designed or rated for use at input or output frequencies above 1.7 GHz, with a peak power of greater than 5 W or a maximum CW power of greater than 500 mW | C | |||||||
| There shall be excluded from this entry semiconductor diodes based upon germanium, selenium or copper oxide | ||||||||
| IL1545 | Transistors, the following and dice and wafers therefor—
| |||||||
(1) an operating frequency exceeding 1.5 GHz | C | |||||||
(2) an operating frequency not exceeding 1.5 MHz and a maximum collector dissipation of more than 300 W | C | |||||||
(3) an operating frequency exceeding 1.5 MHz and a maximum collector dissipation of more than 250 W | C | |||||||
(4) an operating frequency exceeding 200 MHz and a product of operating frequency (in GHz) times the maximum collector dissipation (in watts) of more than 10; or | C | |||||||
(5) being majority carrier-type transistors, including but not limited to junction field-effect transistors (FETs) and metal-oxide semiconductor transistors (MOS) | C | |||||||
| ||||||||
(b) Transistors based upon gallium arsenide and having any of the following characteristics— | ||||||||
(1) an operating frequency exceeding 1 GHz | C | |||||||
(2) a maximum power dissipation of more than 1 W; or | C | |||||||
(3) a noise figure of less than 3 dB | C | |||||||
(bb) Technology unique to transistors based upon gallium arsenide | D | |||||||
(c) Transistors based upon any semiconductor material other than germanium, silicon or gallium arsenide | C | |||||||
| In this entry—
| ||||||||
| IL1547 | Thyristors, the following: and dice and wafers therefor— | |||||||
(a) Designed for use in pulse modulators having a rated turn-on time of less than 1 microsecond where the rated peak current exceeds 150 A | C | |||||||
(b) Having a rated turn-off time of less than 1 microsecond | C | |||||||
(c) Having a rated turn-off time of from 1 microsecond to less than 2.3 microseconds, except those having a rated peak current of 50 A or less and encapsulated in non-hermetically sealed packages | C | |||||||
(d) Having a rated turn-off time of from 2.3 to 10 microseconds and a figure of merit more than 100 | C | |||||||
| In this entry—
| ||||||||
| IL1548 | Photosensitive components, including linear and focal-plane arrays, the following: and dice and wafers therefor— | |||||||
(a) Photosensitive components, including photodiodes, phototransistors, photothyristors, photoconductive cells and similar photosensitive components, having either of the following characteristics— | ||||||||
(1) having a peak sensitivity at a wavelength longer than 1,200 nanometres or shorter than 190 nanometres | C | |||||||
| ||||||||
(2) having a peak sensitivity at a wavelength shorter than 300 nanometres and having an efficiency of less than 0.1 per cent relative to peak response at wavelengths longer than 400 nanometres | C | |||||||
| ||||||||
(b) Semiconductor photodiodes and phototransistors with a response time constant of 95 ns or less measured at the operating temperature for which the time constant reaches a minimum | C | |||||||
| ||||||||
(c) Photo sensitive components specially designed or rated as electromagnetic, including laser and ionized-particle radiation resistant | C | |||||||
(d) Linear and focal plane arrays (hybrid or monolithic) having the characteristics specified in heads (a)(1) or (2) or (b) above, and specially designed components therefor | C | |||||||
| There shall be excluded from this entry—
In this entry—
| ||||||||
| IL1549 | Photomultiplier tubes, the following— | |||||||
(a) Those for which the maximum sensitivity occurs at wavelengths shorter than 300 nanometres | C | |||||||
| ||||||||
(b) Those having an anode pulse rise time of less than 1 nanosecond | C | |||||||
(c) Those which contain microchannel-plate electron multipliers | C | |||||||
| IL1553 | Flash discharge type X-ray systems, including tubes, having all of the following characteristics— | C | ||||||
(a) Peak power greater than 500 MW; (b) Output voltage greater than 500 kV; (c) Pulse width less than 0.2 microsecond | ||||||||
| IL1555 | Electron tubes, the following: and specially designed components therefor— | |||||||
(a) Electron tubes for image conversion or intensification which incorporate any of the following— | ||||||||
(1) fibre optic face plates specified in head (a) of the entry IL1556 in this Group | C | |||||||
(2) microchannel-plate electron multipliers | C | |||||||
| ||||||||
(3) gallium arsenide or other epitaxially grown semi-conductor photocathodes specified in head (c) to the entry IL1556 in this Group | C | |||||||
(aa) Technology for image intensifiers or converters incorporating fibre-optic plates or microchannel plate electron multipliers, or electron tubes for cameras incorporating such intensifiers or converters | D | |||||||
(b) Electron tubes for television/video cameras, having any of the following characteristics— | ||||||||
(1) incorporating fibre-optic face plates specified in head (a) of the entry IL1556 in this Group | C | |||||||
(2) incorporating microchannel-plate electron multipliers | C | |||||||
| ||||||||
(3) coupled with electron tubes specified at head (a) above | C | |||||||
(c) Ruggedised electron tubes for television/video cameras having a maximum length-to-bulb diameter ratio of 5:1 or less | C | |||||||
| There shall be excluded from this entry—
| ||||||||
| IL1556 | Optical elements and elements for optical tubes, the following— | |||||||
(a) Non-flexible fused fibre-optic plates or bundles, having all of the following characteristics— | C | |||||||
(1) a fibre pitch (centre-to-centre spacing) of less than 10 micrometres; (2) a light-absorbing medium surrounding each fibre, or interstitially placed between fibres; and (3) a diameter greater than 13 mm; | ||||||||
(b) Microchannel-plates for electron image amplification, having both of the following characteristics— | C | |||||||
(1) 15,000 or more hollow tubes per plate; and (2) hole pitch (centre-to-centre spacing) of less than 25 micro-metres | ||||||||
(c) Semi-transparent photocathodes incorporating epitaxially grown layers of compound semiconductors, such as gallium arsenide | C | |||||||
(d) Diffractive type optical elements specially designed for display screens, with any of the following characteristics— | ||||||||
(1) a transmission of more than 90 per cent outside the reflection band and reflection of more than 75 per cent inside the reflection band, which has less than 15 nanometres bandwidth and is matched to the frequency of the display light source | C | |||||||
(2) a rear projection screen brightness gain of more than 10 times the gain of a Lambertian scatterer with an equivalent area, and less than 10 per cent variation in brightness across the exit aperture | C | |||||||
| ||||||||
(3) specially designed for use in helmet-mounted displays | C | |||||||
| IL1558 | Electronic vacuum tubes (valves) and cathodes, the following: and other components specially designed for those tubes— | |||||||
(a) Tubes in which space charge control is utilized as the primary functional parameter, including triodes and tetrodes, the following | C | |||||||
(1) tubes rated for continuous wave operation having either of the following characteristics— | ||||||||
(i) those above 4 GHz at maximum rated anode dissipation | C | |||||||
| ||||||||
(ii) those within the frequency range 0.3 to 4 GHz and for which, under any condition of cooling, the product of the maximum rated anode dissipation, expressed in watts, and the square of the maximum frequency expressed in GHz, at the maximum rated anode dissipation is greater than 104; except tubes specially designed for television transmitters operating in the frequency range of 0.047 to 0.96 GHz and rated for operation without a grid current, for which the product of the rated anode dissipation, expressed in watts, and the square of the maximum frequency, expressed in GHz, may reach 2 × 104 | C | |||||||
(2) tubes rated only for pulse operation having either of the following characteristics— | ||||||||
(i) above 1 GHz with maximum peak pulse output power greater than 45 kW | C | |||||||
| ||||||||
(ii) between 0.3 and 1 GHz and for which, under any condition of cooling, the product of the peak pulse output power, expressed in watts, and the square of the maximum frequency, expressed in GHz, is greater than 4.5 × 104 | C | |||||||
(3) tubes specially designed for use as pulse modulators for radar or similar applications, having a peak anode voltage rating of 100 kV or more, or rated for a peak pulse power of 20 MW or more | C | |||||||
(b) Tubes which utilize interaction between a beam of electrons and microwave elements and in which the electrons travel in a direction perpendicular to the applied magnetic field, including but not limited to magnetrons, crossed-field amplifier tubes and crossed-field oscillator tubes | C | |||||||
| ||||||||
(c) Tubes which utilise interaction between a beam of electrons and microwave elements or cavities and in which the electrons travel in a direction parallel to the applied magnetic field (including Klystrons or travelling wave tubes) | C | |||||||
| ||||||||
| The exception in paragraph (v) above does not apply to technological documents the information in which relates to goods excluded in paragraph (v). | ||||||||
(d) Tubes which utilize interaction between an electron beam and microwave elements or cavities but do not require a magnetic field to control or focus the electron beam, except low power reflex oscillator klystrons designed to operate at frequencies below 20 GHz and at a maximum output power of less than 3 W | C | |||||||
(e) Tubes which utilize interaction between a beam of electrons and microwaves elements or cavities in which the electrons drift in a direction parallel to the applied magnetic field but also require for their operation a large component of velocity transverse to the direction of the applied magnetic field, including gyrotrons, ubitrons and peniotrons | C | |||||||
(f) Tubes designed to withstand on any axis an acceleration of short duration (shock) greater than 1,000 g | C | |||||||
(g) Tubes designed for operation in ambient temperatures exceeding 200°C | C | |||||||
(h) Tubes of the type specified in heads (c), (d) or (e) above, which are designed to operate with no filament or cathode heating element as indicated by the absence of heating supply connections | C | |||||||
(i) Tubes which utilize a modulated bean of electrons striking one or more semiconductor diodes to provide power gain | C | |||||||
(j) Cathodes for electronic vacuum tubes, the following— | ||||||||
(1) those specially designed for tubes specified in heads (a) to (i) above (inclusive) | C | |||||||
| ||||||||
(2) impregnated cathodes capable of producing a current density exceeding 0.5 A/cm2 at rated operating conditions | C | |||||||
| In this entry—
| ||||||||
| IL1559 | Hydrogen/hydrogen isotope thyratons of ceramic-metal construction and having any of the following characteristics: and accessories therefor— | |||||||
(a) A peak pulse power output exceeding 12.5 MW | C | |||||||
(b) A peak anode voltage greater than 25 kV | C | |||||||
(c) A peak current rating greater than 1.5 kA | C | |||||||
| Note. For thyratrons rated for both single-shot (crowbar) and modulator service, the figure for modulator service should be used. | ||||||||
| IL1560 | Capacitors designed for or capable of maintaining their rated electrical and mechanical characteristics during their specified operating lifetime, and technology therefor, the following— | |||||||
(a) Monolithic ceramic capacitors (other than boundary layered capacitors) using non-ferro-electric strontium titanate (SrTiO3) dielectric rated for operation over the whole range of ambient temperatures from below −55°C to above +85°C | C | |||||||
(b) Technology for the design and production of tantalum capacitors rated for operation at ambient temperatures exceeding 125°C, except sintered electrolytic types having a casing made of epoxy resin or which are sealed or coated with opoxy resin | D | |||||||
| IL1561 | Materials specially designed and manufactured for use as absorbers of electromagnetic waves having frequencies greater than 2 × 108 Hz and less than 3 × 1012 Hz | C | ||||||
| except, save when contained in paint,
In this entry—
| ||||||||
| IL1564 | Assemblies of electronic components, modules, printed circuit boards with mounted components, substrates and integrated circuits, including packages therefor, the following— NOTE: Integrated circuits are categorized as follows:
| |||||||
(a) Substrates for printed circuit boards, including ceramic substrates and coated metal substrates (single-sided, double-sided or multilayer), and thin copper foils therefor | C | |||||||
| ||||||||
(b) Ceramic packages for integrated circuits which are designed for hermetically sealed pin or pad grid array, leadless carrier or surface-mounted configurations | C | |||||||
| ||||||||
(c) Assemblies, modules and printed circuit boards with mounted components, with any of the following characteristics— | ||||||||
(1) those which include substrates for printed circuit boards specified in head (a) above | C | |||||||
(2) those which contain components specified in this Schedule | C | |||||||
NOTES: 1. For assemblies, modules or printed circuit boards with mounted components which are designed for, or which have the same functional characteristics as, electronic computers or related equipment, see entry IL1565 in Group 3G. 2. This head does not apply to assemblies, modules or printed circuit boards with mounted components which are designed for, or which have the same functional characteristics as, equipment specified elsewhere in this Schedule. | ||||||||
(d) Monolithic integrated circuits, microcomputer microcircuits, microprocessor microcircuits, multichip integrated circuits, film type integrated circuits, hybrid integrated circuits and optical integrated circuits | C | |||||||
(1) encapsulated passive networks save technology for the manufacture of thin film passive networks; (2) encapsulated integrated circuits, having all of the following characteristics— (A) not designed or rated as radiation hardened; (B) not rated for operation at an ambient temperature below 233 K (−40°C) or above 358 K (85°C); (C) packaged in any of the following casings: (i TO-5 outline cases (diameter 7.7 to 9.4mm); (ii hermetically sealed dual in-line cases; or (iii non-hermetically sealed cases; and (D) being any of the following types: (a bipolar monolithic integrated circuits, having all of the following characteristics: (1 designed to perform a single digital logic function or a combination of digital logic functions; (2 encapsulated in packages having 24 terminals or less; (3 a basic gate propagation delay time of no less than 3 ns; (4 a basic gate power dissipation of no less than 2 mW; and (5 a product of the basic gate propagation delay time and the basic gate power dissipation per gate of no less than 30 pJ for types having a basic gate propagation delay time of 3 ns or more and less than 5 ns; (b bipolar monolithic integrated circuits, having all of the following characteristics: (1 designed for operation in civil applications; (2 being either: (a electronic switches, externally controlled by inductive, magnetic or optical means; or (b threshold value switches; and (3 with switching times of 0.5 microsecond or more; (c complementary metal-oxide semiconductor (CMOS) monolithic integrated circuits, having all of the following characteristics: (1 designed for operation as digital logic circuit elements but limited to gates, inverters, buffers, flip-flops, latches, multivibrators, bilateral switches, display drivers, fixed counters, fixed frequency dividers, storage registers, decoders, voltage translators, encoders, Schmidt triggers, delay timers, carry generators, clock generators, and any combination of the above digital logic functions; (2 encapsulated in packages having 24 terminals or less; and (3 a minimum value of the basic gate propagation delay time under any rated condition of no less than 10 ns; (d positive-channel type or negative-channel type metal-oxide semiconductor (PMOS or NMOS) monolithic integrated circuits, having all of the following characteristics: (1 designed for and by virtue of circuit design limited to use as serial digital shift registers; (2 a maximum clock rate of 10 MHz; and (3 a maximum of 1,024 bit per package; (e silicon microcomputer microcircuits (save bit slice microcomputer microcircuits) having all of the following characteristics: (1 mask programmed by the manufacturer for a civil application prior to exportation; (2 a word size to speed ratio of less than or equal to 1.1 bit per microsecond; (3 a speed-power dissipation product of more than or equal to 1.2 microjoule; (4 not containing on-the-chip; (a a read-only storage (ROM) of more than 8,192 byte (not including the storage space needed for the micro-programme); (b a random access storage (RAM) of more than 256 byte; (c a programmable read-only storage (PROM); (d multiplication capabilities; (e general purpose operating systems including CP/M; or (f high order languages including Tiny Basic; (5 an operand (data) word length of less than or equal to 8 bit; (6 not capable of using storage off-the-chip for programme storage; and (7 not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (f silicon monolithic integrated circuits, micro-computer microcircuits, microprocessor micro-circuits, multichip integrated circuits, film type integrated circuits, hybrid integrated circuits, or optical integrated circuits, having both of the following characteristics: (1 no user-accessible microprogrammability; and (2 designed or programmed by the manufacturer for one or more of the following applications: (a car electronics including entertainment, instrumentation, safety, comfort, operations or pollution; (b home electronics, including audio and video equipment, appliances, safety, education, comfort, remote controlled toys or amusement; (c timekeeping applications including watches or clocks; (d personal communications up to 150 MHz, including amateur radio communication and intercom; (e cameras not specified elsewhere in this Schedule including cine cameras but excluding imaging micro-circuits; (f medical electronic prostheses including cardiac pacemakers, hearing aids; or (g civil telephone subscriber sets providing neither ISDN functions nor encryption. NOTE: The temperature limits specified in exception (2)(B) to head (d) above do not apply to exception (2)(D)(f)(2)(a) or (f) to head (d) above. (g monolithic integrated circuits or hybrid integrated circuits, having all of the following characteristics: (1 not capable of addressing off-the-chip storage; (2 no user-accessible microprogrammability; and (3 designed for and by virtue of circuit design limited to use in simple calculators, having both of the following characteristics: (a performing a single function in response to a keystroke; and (b capable of performing floating point additions of a maximum of 13 decimal digits (mantissa only) in not less than 20 ms; (h monolithic integrated circuits or hybrid integrated circuits, having both of the following characteristics: (1 no user-accessible microprogrammability; and (2 designed for and by virtue of circuit design limited to use in simple key programmable calculators, having both of the following characteristics: (a capable of executing a sequence of no more than 256 programme steps introduced into a programme storage on-the-chip by a sequence of keystrokes; and (b capable of performing floating point additions of a maximum of 13 decimal digits (mantissa only) in not less than 20 ms; (i silicon microprocessor microcircuits (save bit slice microprocessor microcircuits), having all of the following characteristics: (1 a word size to speed ratio of less than or equal to 1.25 bit per microsecond; (2 a speed-power dissipation product of more than or equal to 2 microjoule; (3 not containing on-the-chip; (a read-only storage (ROM); (b programmable read-only storage (PROM); (c random-access storage (RAM) of more than 1,024 bit; or (d multiplication instructions; (4 capable of addressing storage off-the-chip of no more than 65,536 byte; (5 an operand (data) word length of less than or equal to 8 bit; (6 an arithmetic logic unit (ALU) not wider than 8 bit; and (7 not rated for operation at am ambient temperature below 253 K (−20°C) or above 348 K (75°C); (j storage monolithic integrated circuits or multi-chip integrated circuits, the following: (1 read-only memory (ROMs), having all of the following characteristics: (a mask programmed by the manufacturer for a civil application prior to exportation; (b a maximum of 8,192 bit per package; (c a maximum access time of no less than 450 ns; and (d not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (2 positive-channel type or negative-channel type metal-oxide semiconductor read-only memory (PMOS- or NMOS-ROMs), having all of the following characteristics: (a mask programmed by the manufacturer for a civil application prior to exportation; (b a maximum of 32,768 bit per package; (c a maximum access time of no less than 450 ns; and (d not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (3 positive-channel type or negative-channel type metal-oxide semiconductor read-only memory (PMOS- or NMOS-ROMs), having all of the following characteristics: (a mask programmed or designed as character generators for a standard character font; (b a maximum access time of not less than 250 ns; and (c not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (4 programmable (non-erasable) read-only memory (PROMs) having all of the following characteristics: (a programmed by the manufacturer for a civil application prior to exportation; (b a maximum of 2,048 bit per package; (c a maximum access time of not less than 250 ns; and (d not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (5 programmable (non-erasable) read-only memory (PROMs) having all of the following characteristics: (a programmed by the manufacturer for a civil application prior to exportation; (b a maximum of 8,192 bit per package; (c a maximum access time of not less than 450 ns; and (d not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (6 bipolar random-access memory (RAMs), having any of the following pairs of characteristics: (a a maximum of 64 bit per package and a maximum access time of not less than 30 ns; (b a maximum of 256 bit per package and a maximum access time of not less than 40 ns; or (c a maximum of 1,024 bit per package and a maximum access time of not less than 45 ns; (7 metal-oxide-semiconductor dynamic random access memory (MOS-DRAMs), having all of the following characteristics: (a a maximum of 4,096 bit per package; (b a maximum access time of not less than 250 ns; and (c not rated for operation at an ambient temperature below 253 K (−20°C) or above 348 K (75°C); (8 metal-oxide semiconductor static random access memory (MOS-SRAMs), having both of the following characteristics: (a a maximum of 1,024 bit per package; and (b a maximum access time of not less than 340 ns; (k amplifier monolithic integrated circuits, multi-chip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following: (1 audio amplifiers: (a having a maximum rated continuous power output of 50 W or less at am ambient temperature of 298 K (25°C); or (b encapsulated in non-hermetically sealed packages;
(2 instrumentation amplifiers, having all of the following characteristics: (a a best-case rated linearity of no better than ±0.01 per cent at a gain of 100; (b a maximum gain-bandwidth product of no more than 7.5 expressed in MHz (eg a maximum bandwidth of 75 kHz at −3 dB and a gain of 100); and (c a typical slew rate at unity-gain not exceeding 3 V/microsecond; (3 isolation amplifiers; (4 operational amplifiers, having all of the following characteristics: (a a typical unity-gain open-loop bandwidth of no more than 5 MHz; (b a typical open-loop voltage gain of no more than 106, ie 120 dB; (c either: (i a maximum intrinsic rated input offset voltage of no less than 1.0 mV; or (ii a maximum input offset voltage drift of no less than 5 microvolt/K; (d a typical slew rate at unity-gain not exceeding 6 V/microsecond; and (e a typical power dissipation of more than 10 mW per amplifier, if the typical slew rate at unity-gain exceeds 2.5 V/microsecond; (5 untuned alternating current (AC) amplifiers, having both of the following characteristics: (a a bandwidth of less than 3 MHz; and (b a maximum rated power dissipation of 5 W or less at an ambient temperature of 298 K (25°C); (l analogue multiplier or divider monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, having both of the following characteristics: (1 a best-case rated linearity of no better than ±0.5 per cent of full scale; and (2 a −3 dB small signal bandwidth of no more than 1 MHz; (m converter monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following: (1 analogue-to-digital converters, having both of the following characteristics: (a a maximum conversion rate to rated accuracy of no more than 50,000 complete conversions per second, ie a conversion time to maximum resolution of no less than 20 micro-second; and (b an accuracy of no better than ±0.025 per cent of full scale over the specified operating temperature range; (2 analogue-to-digital converters, having both of the following characteristics: (a designed for digital voltmeter applications; and (b permitting characteristics corresponding to those of instruments specifically excluded from head (f) of the entry IL1529 in this Group; (3 digital-to-analogue converters, having both of the following characteristics: (a a maximum settling time to rated linearity of no less than: (i 5 microseconds for voltage output converters; or (ii 250 ns for current output converters; and (b non-linearity of equal to or worse than ±0.025 per cent of full scale over the specified operating temperature range; (4 voltage (rms-to-DC) converters; (5 voltage-to-frequency converters having all of the following characteristics: (a not employing delta or delta/sigma modulation techniques; (b a rated accuracy of no better than ±0.01 per cent of full scale; and (c a gain drift of no less than ±50 × 10−6/K at rated frequency;
(n interface monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following: (1 line drivers and line receivers having a typical propagation delay time from data input to output of not less than 15 ns; (2 peripheral or display drivers, having all of the following characteristics: (a a maximum rated output current of 500 mA or less; (b a typical propagation delay time from data input to output of not less than 20 ns; and (c a maximum rated output voltage of 80 V or less; (3 sense amplifiers, having both of the following characteristics: (a a typical propagation delay time from data input to output of not less than 15 ns; and (b a typical input threshold voltage of not less than 10 mV; (4 storage or clock drivers, having all of the following characteristics: (a a maximum rated output current of 500 mA or less; (b a maximum rated output voltage of 30 V or less; and (c a typical propagation delay time from data input to output of not less than 20 ns; (o peripheral positive-channel type or negative channel type metal-oxide-seminconductor (PMOS or NMOS) monolithic integrated circuits or multichip integrated circuits, designed only for: (1 the support of microprocessor microcircuits which are excluded by exception (2)(D)(i) to head (d) above; and (2 having any of the following functions: (a parallel input/output controller (PIO); (b serial input/output controller (SIO); (c dual asynchronous receiver/transmitter (DART); or (d counter/timer circuit (CTC); (p sample and hold monolithic integrated circuits, hybrid integrated circuits, film type integrated circuits or multichip integrated circuits, having both of the following characteristics: (1 an acquisition time of not less than 10 microseconds; and (2 a non-linearity, of equal to or worse than ±0.01 per cent of full scale for a hold time of 1 microsecond; (q timing monolithic integrated circuits, hybrid integrated circuits, film type integrated circuits or multichip integrated circuits, having both of the following characteristics: (1 a typical timing error of not less than ±0.5 per cent; and (2 a typical rise time of not less than 100 ns; (r voltage monolithic integrated circuits, multichip integrated circuits, film type integrated circuits or hybrid integrated circuits, the following— (1 voltage comparators, having both of the following characteristics: (a a maximum input offset voltage of not less than 2 mV; and (b a typical switching speed (ie typical response time) of not less than 30 ns; (2 voltage references, having both of the following characteristics: (a a rated accuracy of not better than ±0.1 per cent; and (b a temperature coefficient of the voltage of not less than 15 × 10−6/K; (3 linear type voltage regulators, having both of the following characteristics: (a a rated nominal output voltage of 50 V or less; and (b a maximum output current of 2A or less; (4 switching type voltage regulators, having both of the following characteristics: (a a rated nominal output voltage of 40 V or less; and (b a maximum output current of 150 mA or less;
(s non-coherent light-emitting alphanumeric displays, which do not incorporate other monolithic integrated circuits; (t non-coherent light-emitting alphanumeric displays, which incorporate monolithic integrated circuits having both of the following characteristics: (1 used for decoding, controlling or driving the display; and (2 not integral with the actual display device; (u simple encapsulated photocoupler (transopter) optical integrated circuits, having both of the following characteristics: (1 electrical input and output; and (2 any incorporated light-emitting diodes can emit only non-coherent light; (3) unencapsulated integrated circuits, having all of the following characteristics— (A) based exclusively upon silicon; (B) not designed or rated as radiation hardened; and (C) being any of the following types: (a bipolar monolithic integrated circuits (save complex custom-built bipolar digital monolithic integrated circuits) having all of the following characteristics: (1 designed to perform a single digital logic function or a combination of digital logic functions; (2 a basic gate propagation delay time of not less than 5 ns; (3 a product of the basic gate propagation delay time and the basic gate power dissipation per gate of net less than 70 pJ; and (4 no more than 24 input/output pads; (b bipolar monolithic integrated circuits (save complex custom-built bipolar digital monolithic integrated circuits) having all of following characteristics: (1 designed for operation in civil applications; (2 being either: (a electronic switches, externally controlled by inductive, magnetic or optical means; or (b threshold value switches; (3 with switching times of 0.5 microsecond or more; and (4 having no more than 24 input/output pads; (c monolithic integrated circuits having all of the following characteristics: (1 no user-accessible microprogrammability; (2 designed for and by virtue of circuit design limited to use in civil radio or television receivers; (3 rated for operation at 11 MHz or less; (4 not designed for station scanning applications; (5 not utilizing charge-coupled device (CCD) technology; (6 not intended for beam lead bonding; and (7 if intended for video or luminance amplifiers, having both of the following characteristics: (a a maximum rated supply voltage not exceeding 30 V; and (b a typical bandwidth not exceeding 7.5MHz; (d monolithic integrated circuits having all of the following characteristics: (1 no user-accessible microprogrammability; (2 not utilizing charge-coupled device (CCD) technology; (3 not intended for beam lead bonding; and (4 designed or programmed by the manufacturer for one or more of the following applications only: (a timekeeping applications, including watches or clocks; or (b cardiac pacemakers or hearing aids; (e amplifier monolithic integrated circuits, the following: (1 audio amplifiers, having a maximum rated power ouput of 25 W or less at an ambient temperature of 298 K (25°C); (2 operational amplifiers, having all of the following characteristics: (a a typical unity-gain open-loop bandwidth of not more than 5 MHz; (b a typical open-loop voltage gain of not more than 562,000 ie 115 dB; (c a maximum intrinsic rated input offset voltage of not less than 2.5 mV; and (d a typical slew rate at unity-gain not exceeding 2.5 V/microsecond; (f voltage monolithic integrated circuits, the following: (1 voltage comparators, having both of the following characteristics: (a a maximum input offset voltage of not less than 5 mV; and (b a typical switching speed (ie typical response time) of not less than 50 ns; (2 linear type voltage regulators having both of the following characteristics: (a a rated nominal output voltage of 40 V or less; and (b a maximum output current of 1A or less; (3 switching type voltage regulators having both of the following characteristics: (a a rated nominal output voltage of 40 V or less; and (b a maximum output current of 150 mA or less; (4 encapsulated integrated circuits having all of the following characteristics— (a not designed or rated as radiation hardened; (b not rated for operation at an ambient temperature below 233 K (−40°C) or above 358 K (85°C); (c packaged in hermetically sealed ceramic packages which are specifically expected from head (b) of this entry; and (d containing unencapsulated integrated circuits which are specifically excepted by exception (3) of head (d) of this entry. | ||||||||
(dd Technological documents the information in which relates to the manufacture of thin film passive networks | D | |||||||
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