OpenLegislation

Chapter GROUP 3D General Industrial Equipment

Changes not yet applied. Later legislation changes this provision in ways not yet written into the text below:

IL1301

Equipment and technology for the production of superalloys, the following—

(a)

Equipment specially designed for the production of superalloys including vacuum induction furnaces used in the production of superalloy powders

C

  • except

    1. (i)

      electric arc and induction furnaces, basic oxygen furnaces and remelting equipment using other techniques for the production of carbon steels, low-alloy steels and stainless steels;

    2. (ii)

      degassing equipment used for the production of carbon steels, low-alloy steels and stainless steels

    3. (iii)

      hot and cold rolling mills, extrusion presses, and swaging and forging machines;

    4. (iv)

      decarburizing and annealing and pickling equipment;

    5. (v)

      surface finishing equipment;

    6. (vi)

      slitting and cutting equipment.

(b)

Technology specific to the production of superalloys, regardless of the type of equipment with which it may be intended to use such technology

D

  • except technology on the equipment specifically excluded from head (a) above, other than melting, remelting and degassing technology specific to the production of superalloys.

In this entry “superalloys” means nickel-, cobalt-, or iron-base alloys having strengths superior to the AISI 300 series (as of the 1 May 1982) at temperatures over 922 K (649°C) under severe environmental and operating conditions. Excluded are carbon steels, low-alloy steels and stainless steels having strengths inferior to the AISI 300 series (as of 1 May 1982).

IL1305Metal rolling mills,m the following: and specially designed components accessories and controls and specially designed ODMA software therefor—
(a)

Isothermal rolling mills, except those capable of operating only at ambient temperatures

C

  • In this head an “isothermal rolling mill” means an isothermal rolling mill in which a constant instantaneous temperature profile is maintained in the contact area between the workpiece and the rolls.

(b)

Other mills specially designed or re-designed for the rolling of metals and alloys with a melting point exceeding 1,900°C

C
IL1312Isostatic presses the following: and specially designed dies and moulds (except those used in isostatic presses operating at amient temperatures), components, accressories and controls and specially designed ODMA software therefor—
(a)

Those capable of achieving a maximum working pressure of 138MPa (20,000 psi) or more and possessing a chamber cavity with an inside diameter in excess of 406 mm (16 inches) or

C
(b)

Those having a controlled thermal environment within the closed cavity and possessing a chamber cavity with an inside diameter of 127 mm or more

C
In this entry “isostatic presses” are equipment capable of pressurizing a closed cavity through various media (gas, liquid, solid particles, etc) to create equal pressure in all directions within the cavity upon a workpiece or material.
IL1352Nozzles, dies and extruder barrels specially designed for the processing of the fluorocarbon materials specified in subhead (a)(2) of the entry IL1754 in Group 31C
IL1353

Manufacturing and testing equipment for optical fibre, optical cable and other cables, the following: and specially designed components and specially designed ODMA software therefor—

(a)

Equipment specially designed to manufacture cable specified in heads (a) and (d) of entry IL1526 in Group 3F

C
(b)

Equipment specially designed to manufacture optical fibre or optical cable specified in entry IL1526 in Group 3F

C
(c)

Equipment specially designed to manufacture optical preforms specified in entry IL1767 in Group 3I

C
(d)

Optical fibre and preform characterisation equipment using semi-conductor lasers for the testing of optical fibres or optical preforms at operting wavelengths exceeding 850 nm

C
IL1354

Equipment designed for the manufacture or testing of printed circuit boards, the following: and specially designed components and accessories and specially designed ODMA software therefor—

(a)

Equipment specially designed for removal of resists or printed circuit board materials by dry (plasma) methods

C
(b)

Computer-aided design (CAD) equipment for printed circuit boards, having any of the following functions—

(1)

generation of artwork design with an interactive capability

C
(2)

generation of test string lists for multi-layer boards

C
(3)

generation of data or programmes for stored-programme controlled printed circuit board drilling equipment

C
(4)

generation of data or programmes for stored-programme controlled printed circuit board shaping and profiling equipment or

C
(5)

generation of data for control of the sequencing of processes of the equipment for printed circuit board manufacture specified in head (c) below

C
(c)

High-speed automated continuous panel processors for plating capable of delivering more than or equal to 860 A/m2 of plate current, (This does not include processors specially designed for, and restricted to, plating tab (edge) connnectors)

C
(d)

Stored-programme controlled inspection equipment for the detection of defects in printed circuit boards using optical pattern comparison or other machine scanning techniques

C
(e)

Stored-programme controlled electrical test equipment for the identification of open and short circuits on bare printed circuit boards, capable of—

(1)

continuity testing (less than or equal to 4 ohm) at a rate of 2,500 or more measurements per second

C
(2)

high voltage testing (greater than or equal to 50 volts) at a rate of 10,000 or more measurements per minute

C
(f)

Stored-programme controlled multi-spindle drills and routers having any of the following characteristics—

(1)

absolute positioning accuracy of ±10 micrometres or better

C
(2)

minimum time needed for drill bit changes less than or equal to 5 seconds

C

  • or

(3)

X and Y positioning speeds higher than or equal to 0.125 m/sec for drilling or for routing

C
(g)

Stored-programme controlled cyclic voltametric stripping equipment specially designed for printed circuit board plating bath monitoring and analysis

C

For the purpose of this entry “stored progamme controlled” means controlled using instructions stored in an electronic storage which a processor can execute in order to direct the performance of predetermined functions.

IL1355

Equipment for the manufacture of testing of electronic components and materials, the following: and specially designed components, accessories and specially designed ODMA software therefor—

(a)

Equipment specially designed for the manufacture or testing of electron tubes and optical elements specified in entries IL1541, 1542, 1555, 1556, 1558 and 1559 in Group 3F, and specially designed components therefor

C
(b)

Equipment specially designed for the manufacture or testing of semiconductor devices, integrated circuits and assemblies, and systems incorporating or having the characteristics of such equipment, the following—

(1)

equipment for the processing of materials for the manufacture of devices and components, the following—

(a)

equipment for producing polycrystalline silicon specified in head (f) of entry IL1757 in Group 3I having a purity more than 99.99% in the form of rods (ingots, boules), pellets, sheets, tubes or small particles

C
(b)

equipment specically designed for purifying or processing III-V and II-VI semiconductor materials specified in the entry IL1757 in Group 3I, except crystal pullers

C
(c)

crystal pullers, furnaces, and gas systems, the following:

 (1

 types with specially designed stored programme controlled temperature, power input or gas, liquid or vapour flow

C
 (2

 diffusion, oxidation and annealing furnaces for operation at pressures above 1 atmosphere (nominal)

C
 (3

 annealing or re-crystallizing equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate greater than 50 cm2 per minute

C
 (4

 plasma enhanced or photo-enhanced chemical reactor equipment

C
 (5

 equipment for automatic control of crystal taper and diameter, except taper and diameter control mechanisms using any of the following equipment techniques

C
  (i

  radiation pyrometers;

  (ii

  thermocouples;

  (iii

  RF power sensors; or

  (iv

  mass weighing (without digital or anomaly control permitting the growth of semiconductors).

 (6

 crystal pullers having any of the following characteristics:

  (i

  rechargeable without replacing the crucible container

C
  (ii

  capable of operation at pressures above 2.5 × 105 pascal (2.5 atmospheres absolute) or below 1 × 105 pascal (1 atmosphere absolute)

C
  (iii

  capable of pulling crystals of a diameter greater than 76.2 mm

C
  (iv

  specially designed to minimize convection currents in the melt by the use of magnetic fields or multiple crucibles

C

  •  or

  (v

  capable of pulling sheet or ribbon crystals

C
 (7

 vacuum induction-heated zone-refining equipment for operation at a pressure of 0.01 pascal or less

C
(d)

equipment for epitaxial growth having any of the following characteristics:

 (1

 operation at pressures below 105 pascal (1 atmosphere absolute)

C
 (2

 stored programme controlled

C
 (3

 rotating vertical-support, radiant-heated reactors

C
 (4

 specially designed for processing bubble memories

C
 (5

 metal-organic chemical vapour deposition reactors; or

C
 (6

 for liquid phase epitaxy

C
(e)

molecular beam epitaxial growth equipment

C
(f)

magnitically-enhanced sputtering equipment

C
(g)

equipment designed for ion implantation, or for ion-enhanced or photo-enhanced diffusion

C
(h)

equipment for selective or non-selective removal by dry methods of passivation layers, dielectrics, semiconductor materials, resists or metals

C

  • except

  • horizontal, cylindrical plasma etchers without stored programme controlled end-point detection, automatic loading or rotating mechanisms and not having the capability for parallel plate etching as used in semiconductor device manufacture and vacuum sputtering equipment designed to operate in the sputter etch mode.

(i)

equipment for semiconductor device fabrication operating below 105 pascal (1 atmosphere absolute) for the chemical vapour deposition of oxides, nitrides, metals and polysilicon except reactive sputtering equipment

C
(j)

electron beam systems (including scanning electron microscopes), capable of mask making or semiconductor device processing and having any of the following characteristics:

 (1

 electrostatic beam deflection

C
 (2

 shaped, non-Gaussian beam profile

C
 (3

 beam blanking capability

C

  • except scanning electron microscopes equipped for Auger analysis;

 (4

 digital-to-analogue conversion rate greater than 3MHz

C
 (5

 digital-to-analogue conversion accuracy greater than 12 bits, or

C
 (6

 target to beam position feedback control precision of 1 micrometre or finer

C

  • except electron beam deposition systems.

(k)

surface finishing equipment, specially designed for the processing of semiconductor wafers and having any of the following characteristics:

 (1

 waxless or non-adhesive mounting

C
 (2

 double-sided simultaneous polishing or lapping

C
 (3

 capable of polishing and lapping wafers exceeding 76.2 mm in diameter, or

C
 (4

 lappng or polishing in two stages on the same machine

C
(l)

interconnection equipment which, may include common single or multiple vacuum chambers, specially designed to permit the integration of equipment specified in this entry into a complete system

C
(2)

masks, mask substrates, mask-making equipment and image-transfer equipment for the manufacture of devices and components, the following—

(a)

finished masks, and reticles and designs therefor

C
(b)

hard surface (eg chromium, silicon, iron oxide) coated substrates (eg glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 76.2 × 76.2 mm

C
(c)

computer-aided design (CAD) equipment, for transforming schematic or logic diagrams into designs for producing semiconductor devices or integrated circuits, having any of the following functions:

 (1

 storage of pattern cells for subdivision of integrated circuits

C
 (2

 scaling, positioning, or rotation of pattern cells

C
 (3

 interactive graphic capabilities

C
 (4

 design rule and circuit checking; or

C
 (5

 circuit layout modification of the arrangement of the elements

C

  • (Note: Software which performs any of the functions in subhead (b)(2)(c), or which can be used for transient analysis, for logic analysis or logic checking, for automatic routing or cell placement, for the generation of test vectors or for process simulation is specially designed ODMA software specified in the heading of this entry.)

(d)

mask fabrication machines using photo-optical methods, the following:

 (1

 step and repeat cameras capable of producing arrays larger than 63.5 × 63.5 mm, or capable of producing a single exposure larger than 3.75 × 3.75 mm, in the focal plane, or capable of producing useful line widths of 3.5 micrometres or less

C
 (2

 pattern generators specially designed for the generation or manufacture of masks or the creation of patterns in photosensitive layers and with placement precision finer than 10 micrometres

C
 (3

 mask fabrication equipment containing automatic adjustment of focus or adjustment of the mask material into the focal plane

C
 (4

 equipment and holders for altering masks or reticles or adding pellicles to remove defects

C
(e)

mask reticle or pellicle inspection equipment, the following:

 (1

 equipment for comparison with a precision of 0.75 micrometre or finer over an area of 63.5 × 63.5 mm or more

C
 (2

 stored programme controlled equipment with a resoution of 0.25 micrometres or finer and with a precision of 0.75 micrometre or finer over a distance in one or two coordinates of 63.5 mm or more

C
 (3

 stored programme controlled defect inspection equipment

C

  • except

  • conventional scanning electron microscopes, other than types specially designed and instrumented for automatic pattern inspection.

(f)

align and expose equipment using photo-optical methods, including projection image transfer equipment, capable of performing any of the following functions:

 (1

 production of useful pattern size of less than 5 micrometres

C
 (2

 alignment with a precision finer than 1 micrometre

C
 (3

 field coverage exceeding 76.2 × 76.2 mm

C
 (4

 wafer backside alignment

C
 (5

 automatic alignment by the sensing of patterns or index marks on the substrate

C
 (6

 projection image transfer for processing slices (wafers) of 50.8 mm or larger in diameter

C

  • except non-contacting (proximity) image transfer equipment which does not perform any of the functions specified in subsheads (f)(1) to (f)(5) above.

(g)

electron beam, ion beam, or X-ray equipment for projection image transfer

C
(h)

photo-optical or non-photo-optical step and repeat or partial field equipment for the transfer of the image on to the wafer

C
(i)

mask contact transfer equipment for imaging a field larger than 76.2 × 76.2 mm

C
(3)

stored programme controlled inspection equipment for the detection of defects in processed wafers, substrates or chips using optical pattern comparison or other machine scanning techniques

C

  • except conventional scanning electron microscopes, other than when specially designed and instrumented for automatic pattern inspection.

(4)

specially designed stored programme controlled measuring and analysis equipment, the following—

(a)

equipment specially designed for the measurement of oxygen or carbon content in semiconductor materials

C
(b)

equipment for concurrent etching and doping profile analysis (employing capacitance-voltage or current-voltage analysis techniques)

C
(c)

equipment for linewidth measurement with a resolution of 1.0 micrometre or finer

C
(d)

specially designed flatness measurement instruments capable of measuring deviations from flatness of 10 micrometres or less with a resolution of 1 micrometre or finer

C
(5)

equipment for the assembly of integrated circuits, the following—

(a)

stored programme controlled die (chip) mounters and bonders with a positioning accuracy finer than 50 micrometres or incremental steps finer than 6.4 micrometres

C
(b)

stored programme controlled wire bonders and welders for performing consecutive bonding operations

C
(c)

equipment for producing multiple bonds in a single operation (eg beam lead bonders, chip carrier bonders, tape bonders)

C
(d)

semi-automatic or automatic hot cap sealers, in which the cap is heated locally to a higher temperature than the body of the package, specially designed for ceramic microcircuit packages specified in head (b) of entry IL1564 in Group 3F and which have a throughput equal to or greater than one package per minute except general purpose resistance type spot welders

C
(e)

thermal compression bonders, also known as nailhead bonders

C
(6)

stored programme controlled wafer probing equipment, the following—

(a)

equipment having positioning accuracy finer than 50 micrometres, or incremental steps finer than 6.4 micrometres

C
(b)

equipment having individual die location read-out (X-Y position information) during testing

C
(c)

equipment capable of testing devices having more than a total of 24 terminals

C
(d)

equipment having automatic slice (wafer) alignment

C
(7)

test equipment, the following—

 (i

 stored programme controlled equipment specially designed for testing discrete semiconductor devices and unencapsulated dice, capable of performing any of the following functions

C
  (a

  measurement of time intervals of less then 10 ns;

  (b

  measurement of parameters (eg fT, S-parameters, noise figure) at frequencies greater than 250 MHz;

  (c

  resolution of currents of less than 100 picoamperes; or

  (d

  measurements of spectral response at wavelengths outside the range from 450 to 950 nm;

  •  Note: discrete semiconductor devices include, for example, diodes, transistors, thyristors, photocells and solar cells.

 (ii

 stored programme controlled equipment specially designed for testing integrated circuits, and assemblies thereof, capable of performing any of the following functions

C
  (a

  functional (truth table) testing at a pattern rate greater than 2 MHz;

  (b

  resolution of currents of less than 1 nonoampere;

  (c

  testing of integrated circuits (not mounted on circuit boards) in packages having more than a total of 24 terminals, except equipment specially designed for and dedicated to the testing of integrated circuits not specified in entry IL1564 in Group 3G; or

  (d

  measurement of rise times, fall times and edge placement times with a resolution of less than 20 ns;

  •  except—

   (1

   test equipment which is not of a general-purpose nature and which is specially designed for, and dedicated to, testing assemblies or a class of assemblies for home and entertainment applications and

   (2

   test equipment which is not of a general-purpose nature and which is specially designed for, and dedicated to, testing electronic components, assemblies and integrated circuits the subject of a specific exception to IL1564 in Group 3G provided that such test equipment does not incorporate computing facilities with user-accessible programming capabilities;

 (iii

 equipment specially designed for determining the performance of focal-plane arrays at wavelengths more than 1,200 nm, using stored programme controlled measurements or computer aided evaluation and having any of the following characteristics

C
  (a

  using scanning light spot diameters of less than 0.12 mm;

  (b

  designed for measuring photosensitive performance parameters and for evaluating frequency response, modulation transfer function, uniformity of responsivity or noise; or

  (c

  designed for evaluating arrays capable of creating images of greater than 32 × 32 line elements;

 (iv

 specially designed for bubble memories

C
(8)

Class 10 filters capable of providing an environment of 10 or less particles of 0.3 micrometre or more per 0.02832/m3 and filter materials therefor

C
(9)

Electron-beam test systems (capable of operating at or below 3,000 eV), for non-contactive probing of powered-up semiconductor devices having any of the following—

C
(a)

Stroboscopic capability with either beam blanking or detector strobing;

(b)

An electron spectrometer for voltage measurements with a rsolution of less than one-half (0.5) volt; or

(c)

Electrical tests fixtures for performance analysis of integrated circuits.

  • except—

  • Scanning electron microscopes, other than those specially designed and instrumented for non-contactive probing of a powered up semiconductor device, are not excluded from head (b).

In this entry—

  • “masks” means those used in electron beam lithography, X-ray lithography, and ultra-violet lithography, as well as ultra-violet and visible photolithography;

  • “magnetically-enhanced” means equipment incorporating a cathode assembly having an integral magnetic structure for enhancing the plasma intensity;

  • “stored programme controlled” means controlled by using instructions stored in an electronic storage which a processor can erxecute in order to direct the performance of predetermned functions.

IL1356

Equipment specially designed or incorporating modifications for the continuous coating of polyester-base magnetic tape specified in entry IL1572 in Group 3G, and specially designed components therefor

C

except general purpose continuous coating equipment.

L1357

Equipment for the production of fibres specified in the entry IL1763 in Group 3I or their composites, the following and specially designed components and accessories and specially designed ODMA software therefor—

(a)

Filament winding machines of which the motions for positioning wrapping and winding fibres are coordinated and programmed in three or more axes, specially designed to fabricate composite structures or laminates from fibrous and filamentary materials; and coordinating and programming controls therefor

C
(b)

Tape-laying machines of which the motions for positioning and laying tape and sheets are coordinated and programmed in two or more axes, specially designed for the manufacture of composite airframes and missile structures

C
(c)

Multidirectional, multidimensional weaving machines and interlacing machines, including adapters and modification kits, for weaving, interlacing or braiding fibres to manufacture composite structures, except textile machinery which has not been modified for the above end-uses

C
(d)

Specially designed or adapted equipment for the production of fibrous and filamentary materials specified in head (a) or (b) in the entry IL1763 in Group 3I, the following—

(1)

equipment for converting polymeric fibres, (such as polyacrylonitrile, rayon, or polycarbosilane) including special provision to strain the fibre during heating

C
(2)

equipment for the vapour deposition of elements or compounds on heated filamentary substrates

C

  • and

(3)

equipment for the wet-spinning of refractory ceramics (such as aluminium oxide)

C
(e)

Specially designed or adapted equipment for special fibre surface treatment or for producing prepregs and preforms specified in head (c) in the entry IL1763 in Group 3I

C

  • NOTE

  • Specially designed or adapted components and accessories for the machines specified in this entry include, but are not limited to, moulds, mandrels, dies, fixtures and tooling for pressing, curing, carbonising, graphitising, casting, sintering or bonding of preforms, composite structures, laminates and manufactures therefore specified in head (d) to the entry IL1763 in Group 3I.

IL1358

Equipment specially designed for the manufacture or testing of devices and assemblies thereof specified in the entry IL1588 in Group 3G or magnetic recording media specified in the entry IL1572 in Group 3G the following: and specially designed components and specially designed ODMA software therefor—

  1. (a)

    Equipment for the manufacture of single and multi-aperture forms specified in heads (b), (c) and (d) mentioned in entry IL1588 in Group 3G, the following—

(1)

automatic presses to produce specified types

C
(2)

press dies to produce specified types

C
(3)

automatic equipment for monitoring, grading, sorting, exercising or testing of specified types

C
(b)

Equipment for the manufacture of thin film memory storage or switching devices having square hysteresis loops and automatic equipment for monitoring, grading, sorting, exercising or testing of devices specified in head (e) of entry IL1588 in Group 3G

C
(c)

Automatic equipment for monitoring, exercising or testing assemblies of devices specified in heads (b), (c), (d) or (e) of the entry IL1588 in Group 3G

C
(d)

Equipment which incorporates specially designed modifications for the application of magnetic coating to flexible disk recording media with a packing density exceeding 2,460 bit per cm

C

  • except general purpose coating equipment.

(e)

Equipment specially designed for the application of magnetic coating to non-flexible (rigid) disk type recording madia not excepted in paragraph (vi) of head (d) of entry IL1572 in Group 3G

C
(f)

Stored programme controlled equipment for monitoring, grading, exercising or testing recording media, other than tape, specified in head (d) of entry IL1572 in Group 3G

C

Note: For the purpose of this entry “single aperture forms” means single aperture forms having either of the following characteristics:

  1. (i)

    switching rate of 0.3 microsecond or faster at the minimum field strength required for switching at 40°C or

  2. (ii)

    a maximum dimension less than 0.45 mm except single aperture forms which have:

    1. (a)

      a switching time equal to or more than 0.24 microsecond; and

    2. (b)

      a maximum dimension of 0.30 mm or more.

In this entry—

  • “automatic” means machinery not requiring the assistance of a human operator to complete its function(s) during each complete cycle of operations;

  • “function” does not include the initial loading or final unloading of material from the machine.

IL1359Specially designed tooling and fixtures for the manufacture of fibre-optic connectors and couplers specified in head (e) of the entry IL1526 in Group 3FC
IL1360

Stored programme controlled equipment capable of automatic X-ray orientation and angle correction of double-rotated stress-compensated (SC) quartz crystals specified in entry IL1587 in Group 3G, with a tolerance of 10 seconds of arc maintained simultaneously in both angles of rotation

C

In this entry “stored programme controlled” means controlled by using instructions stored in an electronic storage which a processor can execute in order to direct the performance of predetermined functions.

IL1361Test facilities and equipment for the design or development of aircraft or gas turbine aero-engines, the following and specially designed components, accessories and specially designed ODMA software therefor—
(a)

Supersonic (Mach 1.4 to Mach 5), hypersonic (Mach 5 to Mach 15) and hypervelocity (above Mach 15) wind tunnels

C

  • except—

(i)

supersonic (Mach 1.4 to Mach 5) wind tunnels not specially designed for or fitted with means of, preheating the air;

  • or

(ii)

wind tunnels speciall;y designed for educational purposes and having a test section size (measured internally of less than 25 cm;

  • (Note: by test section size is understood the diameter of the circle, or the side of the square, or the longest side of the rectangle constituting possible shapes of the test section.)

(b)

Devices for simulating flow-environments of Mach 5 and above, regardless of the actual Mach number at which the devices operate, including hot shot tunnels, plasma arc tunnels, shock tubes, shock tunnels, gas tunnels and light gas guns

C
(c)

Wind tunnels and devices, other than two dimensional (2-D) sections that have unique capabilities for simulating Reynolds number flow in excess of 25 × 106, at transonic velocities

C
(d)

Automated control systems, instrumentation (including sensors) and automated date-acquisition equipment, specially designed for use with wind tunnels and devices specified in head (a), (b) or (c) above

C
(e)

Models, specially designed for use with wind tunnels or with the devices specified in head (b) or (c) above, of aircraft, helicopters, airfoils, spacecraft, space-launch vehicles, rockets or surface-effect vehicles specified in the entries in Groups 1 and 3E relating thereto or of surface-effect vehicles specified in head (b) of the entry IL1416 relating to vessels

C
(f)

Specially designed electromagnetic interference and electromagnetic pulse (EMI/EMP) simulators

C
(g)

Specially designed test facilities and equipment for the development of gas turbine aero-engines and components, the following—

(1)

special test facilities capable of applying dynamic flight loads, measuring performance or simulating the design operating environments for rotating assemblies of aero-engines

C
(2)

test facilities, test rigs and simulators for measuring combustion system and hot gas flow path performance, heat transfer and durability for static assemblies and aero-engine components

C
(3)

specially designed test rigs, equipment or modified gas turbine engines which are utilized for development of gas turbine aero-engine internal flow systems (gas path seals, air-oil seals and disc cavity flow fields)

C
IL1362Vibration test equpment the following—
(a)

Vibration test equipment using digital control techniques and specially designed ancillary equipment and specially designed ODMA software therefor

C

  • except

    1. (i)

      individual exciters (thrusters) with a maximum thrust of less than 100 kN (22,500 lb);

    2. (ii)

      analogue equipment;

    3. (iii)

      mechanical and pneumatic exciters (thrusters);

    4. (iv)

      vibrometers;

(b)

High intensity acoustic test equipment capable of producing an overall sound pressure level of 140 dB or greater (referenced to 2 × 10−5 N/m2) or with a rated output of 4kW or greater and specially designed ancillary equipment and specially designed ODMA software therefor

C

  • except analogue equipment.

(c)

Ground vibration (including modal survey) test equipment that uses digital control techniques and specially designed ancillary equipment, and specially designed ODMA software therefor

C

  • except analogue equipment.

  • Note: vibration and acoustic test systems typically consist of one or more exciters (thrusters), or acoustic noise generators, together with ancillary equipment for instrumentation, control, data acquisition and analysis.

IL1363Specially designed water tunnel equipment, components, accessories and databases for the design and development of vessels, the following: and specially designed ODMA software therefor—
(a)

Automated control systems, instrumentation (including sensors) and data acquisition equipment specially designed for water tunnels

C
(b)

Automated equipment to control air pressure acting on the surface of the water in the test section during the operation of the water tunnel

C
(c)

Components and accessories for water tunnels, the following—

(1)

balance and support systems

C
(2)

automated flow or noise measuring devices, and

C
(3)

models of hydrofoil vessels, surface-effect vehicles, SWATH vessels and specially designed equipment and components specified in heads (a), (b), (c), (e), (f), (g) and (h) in entry IL1416 in Group 3E for use in water tunnels

C
(d)

Databases generated by use of equipment specified in this entry

C

In this entry “database” shall have the same meaning as in entry IL1566 in Group 3G.

IL1364Machinery and equipment for the manufacture of hydrofoil vessel and surface-effect vehicle and SWATH vessel structures and components, the following: and specially designed components and accesspories therefor—
(a)

Specially designed equipment for manufacturing anisotropic, orthotropic or sandwich structures from components specified in subhead (h)(3) of the entry IL1416 in Group 3E

C

  • Note: in this head—

    1. 1.

      “Anisotropic construction” means the use of fibre reinforcing members aligned so that the load-carrying ability of the structure can be primarily orientated in the direction of expected stress.

    2. 2.

      “Orthotropic construction” means a method of stiffening plates in which the structural members are at right angles to each other.

    3. 3.

      “Sandwich construction” means the use of structural members or plates which are fabricated and permanently affixed in layers to enhance their strength and reduce their weight.

(b)

Specially designed equipment for the production and testing of flexible materials for skirts, seals, air curtains, bags and fingers for surface-effect vehicles

C
(c)

Specially designed equipment for the production of water-screw propellers and hub assemblies and water-screw propeller systems specified in heads (c) and (f) of entry IL1416 in Group 3E

C
(d)

Specially designed equipment for the production, dynamic balancing and automated testing and inspection of lift fans for surface-effect vehicles

C
(e)

Specially designed equipment for the production of water-jet propulsion pumps rated at 3,000 hp or greater, or multiple-pump system equivalents thereof

C
(f)

Specially designed equipment for the production, dynamic balancing and automatic testing of AC-AC synchronous and AC-DC systems, sectored disc and concentric-drum rotors for DC momopolar machines

C
IL1365

Equipment specially designed for in-service monitoring of acoustic emissions in airborne vehicles, or underwater vehicles specified in the entry IL1418 in Group 3E, capable of discriminating acoustic emissions related to crack growth from innocuous noise sources and capable of spatial location of the crack, and specially designed components, accessories and specially designed ODMA software therefor

C

except, general purpose acoustic emission equipment.

Note: The methods used for discriminating acoustic emissions from innocuous noise sources include pattern recognition techniques.

IL1370

Machine-tools for generating optical quality surfaces, specially designed components and accessories the following and specially designed ODMA software therefor—

(a)

Turning machines using a single point cutting tool and having all of the following characteristics—

C
(1)

slide positioning accuracy less (finer) than 0.0005 mm per 300 mm of travel, TIR (peak-to-peak);

(2)

slide positioning repeatability less (finer) than 0.0002 mm per 300 mm of travel, TIR (peak-to-peak);

(3)

spindle run-out (radial and axial) less than 0.0004 mm TIR (peak-to-peak);

(4)

angular deviation of the slide movement (yaw, pitch and roll) less (finer) than 2 seconds of arc (peak-to-peak) over full travel;

(5)

slide perpendicularity less than 0.001 mm per 300 mm of travel, TIR (peak-to-peak);

(b)

Fly cutting machines having both of the following characteristics—

C
(1)

spindle run-out (radial and axial) less than 0.0004 mm TIR (peak-to-peak);

(2)

angular deviation of slide movement (yaw, pitch and roll) less (finer) than 2 seconds of arc (peak-to-peak) over full travel;

(c)

Specially designed components, the following—

(1)

spindle assemblies, consisting of spindles and bearings as a minimal assembly, except those assemblies with axial and radial axis motion measured along the spindle axis in one revolution of the spindle equal to or greater (coarser) than 0.0008 mm TIR (peak-to-peak)

C
(2)

linear induction motors used as drives for slides, having all of the following characteristics—

C
(i)

stroke greater than 200 mm;

(ii)

nominal force rating greater than 45N;

(iii)

minimum controlled incremental movement less than 0.001 mm;

(d)

Single point diamond cutting tool inserts having all of the following characteristics

C
(1)

flawless and chip-free cutting edge when magnified 400 times in any direction;

(2)

cutting radius between 0.1 and 5 mm;

(3)

cutting radius out-of-roundness less than 0.002 mm TIR (peak-to-peak).

ILO1371

Anti-friction bearings, the following—

  1. (a)

    Ball and roller bearings having an inner bore diameter of 10 mm or less and tolerances of ABEC 5, RBEC 5 or better and either of the following characteristics—

(1)

made of special materials that is to say, with rings, balls or rollers made from any steel alloy or other material (including but not limited to high-speed tool steels, Monel metal, beryllium, metalloids, ceramics and sintered metal composites), except the following; low-carbon steel, SAE-52100 high carbon chromium steel, SAE-4615 nickel molybdenum steel, AISI-440C (SAE-51440C) stainless steel (or national equivalents), or

C
(2)

manufactured for use at normal operating temperatures over 150°C either by use of special materials or by special heat treatment

C
(b)

Ball and roller bearings (exclusive of separable ball bearings and thrust ball bearings) having an inner bore diameter exceeding 10 mm and having tolerances of ABEC 7, RBEC 7 or better and either of the following characteristics—

(1)

made of special materials, that is to say, with rings, balls or rollers made from any steel alloy or other material (including but not limited to high-speed tool steels, Monel metal, beryllium, metalloids, ceramics and sintered metal composites), except the following; low-carbon steel, SAE-52100 high carbon chromium steel, SAE-4615 nickel molybdenum steel, AISI-440C (SAE-51440C) stainless steel (or national equivalents), or

C
(2)

manufactured for use at normal operating temperatures over 150°C either by use of special materials or by special heat treatment

C
(c)

Ball and roller bearings having tolerances better than ABEC 7

C
(d)

Gas-lubricated foil bearings

C
(e)

Bearing parts usable only for bearings specified in this entry, the following: outer rings, inner rings, retainers, balls, rollers and sub-assemblies

C

There shall be excluded from this entry hollow bearings.

IL1372

Technology for industrial gas turbine engines, the following—

(a)

Technology common to industrial gas turbine engines and gas turbine aero-engines specified in head (d) of the entry IL1460 in Group 3E

D
(b)

Technology common to industrial gas turbine engines and marine gas turbine engines specified in the entry IL1431 in Group 3E

D
IL1385

Specially designed production equipment for compasses, gyroscopes (gyros), accelerometers and inertial equipment specified in the entry IL1485 in Group 3E

C

Note: This entry includes—

  1. (a)

    For ring laser gyro equipment, the following equipment used to characterize mirrors, having the threshold accuracy shown or better:

    1. (1)

      Rectilinear scatterometer (10 ppm)

    2. (2)

      Polar scatterometer (10 ppm)

    3. (3)

      Reflectometer (50 ppm)

    4. (4)

      Profilometer (5 angströms)

  2. (b)

    For other inertial equipment:

    1. (1)

      Inertial Measurement Unit (IMU) module tester

    2. (2)

      IMU platform tester

    3. (3)

      IMU stable element handling fixture

    4. (4)

      IMU platform balance fixture

    5. (5)

      Gyro tuning test station

    6. (6)

      Gyro dynamic balance station

    7. (7)

      Gyro run-in/motor test station

    8. (8)

      Gyro evacuation and fill station

    9. (9)

      Centrifuge fixture for gyro bearings

    10. (10)

      Accelerometer axis align station

    11. (11)

      Accelerometer test station

IL1388Specially designed equipment for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, for non-electric substrates by processes specified in entry IL1389 in this Group, the following: and specially designed automated handling, positioning, manipulation and control components and specially designed ODMA software therefor—
(a)

stored programme controlled chemical vapour deposition (CVD) production equipment with both of the following characteristics

C
(1)

process modified for one of the following—

(a)

pulsating CVD;

(b)

controlled nucleation thermal decomposition (CNTD); or

(c)

plasma anhanced or plasma assisted CVD; and

(2)

any of the following characateristics—

(a)

incorporating high vacuum (less than or equal to 10−7 atm) rotating seals;

(b)

operating at reduced pressure (less than 1 atm); or

(c)

incorporating in situ coating thickness control;

(b)

Stored programme controlled ion implantation production equipment having beam currents of 5 mA or higher

C
(c)

Stored programme controlled electron beam physical vapour deposition (EB-PVD) production equipment with either of the following characteristics

C
(i)

incorporating power systems greater than 80 kW; or

(ii)
(1)

incorporating power systems greater than 50 kW; and

(2)

having both of the following characteristics:

 (a

 incorporating a liquid pool level laser control system which regulates precisely the ingots feed rate; and

 (b

 incorporating a computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the vaporant stream to control the deposition rate of a coating containing two or more elements

(d)

Stored programme controlled plasma spraying production equipment having any of the following characteristics—

C
(1)

operating at atmospheric pressure discharging molten or partially molten material particles into air or inert gas (shrouded torch) at nozzle exit gas velocities greater than 750 m/sec calculated at 293 K at 1 atmosphere;

(2)

operating at reduced pressure controlled atmosphere (less than or equal to 100 millibar (0.1 atm) measured above and within 30 cm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 10−4 millibar prior to the spraying process; or

(3)

incorporating in situ coating thickness control.

(e)

Stored programme controlled sputter deposition production equipment capable of current densities of 5 mA/cm2 or higher at a deposition rate of 10 micrometres/hr or higher

C
(f)

Stored programme controlled cathodic arc deposition production equipment with either of the following characteristics—

C
(1)

incorporating target areas larger than 45.6 cm2; or

(2)

incorporating a magnetic field steering control of the arc spot on the cathode

(g)

Deposition process or surface modification equipment for stored programme controlled production processing which enables the combining of any individual deposition processes specified in heads (a) to (f) above (inclusive) so as to enhance the capability of such individual processes

C

For the purpose of this entry “stored programme controlled” means controlled by using instructions stored in an electronic storage which a processor can execute in order to direct the performance of perdetermined functions.

IL1389

Technology and sp[ecially designed ODMA software therefor, the following—

  1. (a)

    Technology for application to non electronic devices designed to achieve—

  • by any process specified in column 1 of the Table below on any substrate specified in that part of column 2 of the Table which relates to that process any inorganic overlay coating or inorganic surface modification coating specified in that part of column 3 of the Table which relates to that substrate

D

  • except that this head does not include technology for single stage pack cementation of solid airfoils.

(b)

Specially designed ODMA software for the technology included in head (a)

D

  • Note: The processes included in column 1 are defined in Notes A(a)-(i) below. Other terms used in the Table are defined in Notes B(1)-(8) below.

TABLE

1. Coating process2. Substrate3. Resultant coating
A

chemical vapour deposition (CVD)

superalloysaluminides for internal surfaces, alloyed aluminides or noble metal modified aluminides
titanium or titanium alloyscarbides aluminides of alloyed aluminides
ceramicssilicides or carbides
carbon-carbon, carbon-ceramics, or metal matric compositessilicides, carbides, mixtures thereof or dielectric layers
copper or copper alloystungsten or dielectric layers
silicon carbide or cemented tungsten carbidecarbides, tungsten, mixtures thereof or dielectric layers
B

electron-beram physical vapour deposition (EB-PVD)

superalloysalloyed silicides, alloyed aluminides MCrA1X (except CoCrA1y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluminium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia) or mixtures thereof (including mixtures of the above with silicides or aluminides)
ceramicssilicides or modified zirconia (except calcia-stabilized zirconia)
aluminium alloysMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of alumium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia) or mixtures thereof
corrosion resistant steelMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluminium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia)
carbon-carbon, carbon-ceramic, or metal matric compositessilicides, carbides, mixtures thereof or dielectric layers
copper or copper alloystungsten or dielectric layers
silicon carbide or comented tungsten carbidecarbides, tungsten, mixtures thereof or dielectric layers
C

electro-phoretic deposition

superalloysalloyed aluminides or noble metal modified aluminides
D

pack cementation

superalloysalloyed aluminides or noble metal modified aluminides
(see also A above)carbon-carbon, carbon-ceramic or metal matric compositessilicides, carbides or mixtures thereof
aluminium alloysaluminides or alloyed aluminides
E

plasma spraying (high velocity or low pressure only)

superalloysMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluinium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia), or mixtures thereof
aluminium alloysMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluinium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia), or mixtures thereof
corrosion resistant steelMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluinium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia), or mixtures thereof
titanium or titanium alloyscarbides or oxides
F

slurry deposition

refractory metalsfused silicides or fused aluminides
carbon-carbon, carbon-ceramic or metal matrix compositessilicides, carbides or mixtures thereof
G

sputtering (high rate, reactive or radio frequency only)

superalloysalloyed silicides, alloyed aluminides noble metal modified aluminides, MCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluinium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia) platinum or mixtures thereof (including mixtures of the above silicides or aluminides)
ceramicssilicides, platinum or mixtures thereof
aluminium alloysMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluinium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia), or mixtures thereof
corrosion resistant steelsMCrA1X (except CoCrA1Y which contains less than 22 weight per cent of chromium and less than 12 weight per cent of aluinium and less than 2 weight per cent of yttrium), modified zirconia (except calcia-stabilized zirconia), or mixtures thereof
titanium or titanium alloysborides or nitrides
carbon-carbon, carbon-ceramic or metal matrix compositessilicides, carbides, mixtures thereof or dielectric layers
copper or copper alloystungsten or dielectric layers
silicon carbide or cemented tungsten carbidecarbides, tungsten or dielectric layers
H

ion implantation

high temperature bearing steelstantalum or niobium columbiun
beryllium or berylli;um alloysborides
carbon-carbon, carbon-ceramic or metal matrixsilicides, carbides, mixtures thereof or dielectric layers
titanium or titanium alloysborides or nitrides
silicon nitride or cemented tungsten carbidenitrides, carbides or dielectric layers
sensor widow materials transparent to electromagnetic waves, as follows: silica, alumina, silicon, gcermanium, zinc sulphide, sinc selenide or gallium arsenidedielectric layers

Notes

  1. AParagraph A
  2. BParagraph B