Paragraph 3 3A001
Acoustic—optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;
Note: Sub—head c.3. of this entry does not specify devices specially designed for civil television, video or AM and FM broadcasting equipment.
Electronic devices or circuits containing components, manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents, with any of the following:
Electromagnetic amplification:
At frequencies equal to or less than 31GHz with a noise figure of less than 0·5dB; or
At frequencies exceeding 31GHz;
Current switching for digital circuits using superconductive gates with aproduct of delay time per gate (in seconds) and power dissipation per gate(in watts) of less than 1014minus; J; or
Frequency selection at all frequencies using resonant circuits with Q—values exceeding 10,000;
High energy devices, as follows:
Batteries, as follows:
Note: Sub—head c.1. of this entry does not specify batteries with volumes equal to or less than 26cm3 (e.g.,standard C—cells or UM—2 batteries).
Primary cells and batteries having an energy density exceeding 350Wh/kg and rated for operation in the temperature range from below 243K (−30°C) to above 343K (70°C);
Rechargeable cells and batteries having an energy density exceeding150Wh/kg after 75 charge/discharge cycles at a discharge current equal toC/5 hours (C being the nominal capacity in ampere hours) when operating in the temperature range from below 253K (−20°C) to above 333K (60°C);
Technical Note: Energy density is obtained by multiplying the average power in watts (average voltage in volts times average current in amperes) by the duration of the discharge in hours to 75% of the open circuit voltage divided by the total mass of the cell (or battery) in kg.
Space qualified and radiation hardened photovoltaic arrays with a specific power exceeding 160W/m2 at an operating temperature of 301K (28°C) under a tungsten illumination of 1kW/m2 at 2,800K (2,527°C);