Paragraph 3A Equipment, Assemblies and Components

Changes not yet applied. Later legislation changes this provision in ways not yet written into the text below:

Sch 1, Pt III am by Export of Goods (Control) 2001 art 6
Sch 1, Pt I, Group 4 rev by Export of Goods (Control) 2001 art 4
Sch.1, Pt.I, Croup 1, para.1 revoked by Export of Goods (Control) 1996 art.2(f)
Sch.1, Pt.II revoked by Export of Goods (Control) 1996 art.2(g)
Sch.1, Pt.III substituted by Export of Goods (Control) 1996 art.2(h), Sch.1
Sch.1, Pt.I, Group 2 substituted by Export of Goods (Control) 1997 art.5, Sch.2
Sch.1, Pt.I, Group 3 amended by Export of Goods (Control) 1997 art.6
Sch.1, Pt.III amended by Export of Goods (Control) 1997 art.7
Sch.1, Pt.I rev.in pt. by Export of Goods (Control) 1999 art.2(b)
Sch.1, Pt.I amended by Export of Goods (Control) 1999 art.4
Sch.1, Pt.III defn(s). amended by Export of Goods (Control) 1999 art.5(1)(2)(a) (b)(d)
Sch.1, Pt.III (defn. of enzymes) revoked by Export of Goods (Control) 1999 art.5(1)(2)(c)
Sch.1, Pt.III amended by Export of Goods (Control) 1999 art.5(3)-(6)
Sch 1, Pt I, Group 2 am by Export of Goods (Control) 2001 art 5
Sch.1 rev. in pt. by Dual-Use and Related Goods (Export Control) 1995 reg.13(b)(iv)
Sch.1, Pt III, Group 1 amended by Export of Goods (Control) Order 1994 1994 art.2(c)
Sch.1, Pt III, Group 3 amended by Export of Goods (Control) Order 1994 1994 art.2(d)
Sch.1, Pt.I, Group 1, para.1 amended by Export of Goods (Control) 1995 art.3(2)
Sch.1, Pt.I, Group 1, para.2 amended by Export of Goods (Control) 1995 art.2(2)
Sch.1, Pt.III amended by Dual-Use and Related Goods (Export Control) 1996 reg. 4
Sch. 1 Pt. 3 modified by Dual-Use and Related Goods (Export Control) 1996 reg. 14
Sch. 1 Pt. 3 word deleted by Export of Goods (Control) 2000 art. 4(2)(a)
Sch. 1 Pt. 3 words inserted by Export of Goods (Control) 2000 art. 4(2)(b)
Sch.1, Pt III, Group 1 am and rev. in Pt. by Export of Goods (Control) Order 1994 1994 art.2(b)
Sch.1, Pt III, Group 3 am and rev. in Pt. by Export of Goods (Control) Order 1994 1994 art.2(c)
Sch.1, Pt.I, Group 3 amended by Export of Goods (Control) 1996 art.3
Sch.1, Pt.III amended by Export of Goods (Control) 2000 art. 4
Sch.1, Pt.III amended by Export of Goods (Control) 2000 art.3
Sch. 1 Pt. 3 modified by Dual-Use and Related Goods (Export Control) 1996 reg. 2(1)
Sch.1, Pt.I amended by Export of Goods (Control) 1999 art.2
Sch. Pt.III, entry HL7 amended by Export of Goods (Control) 1997 art.2
Sch.1, Pt III, Group 3 amended by Export of Goods (Control) Order 1994 1994 art.2
Sch 1, Pt I, Group 2 am by Export of Goods (Control) 2003 art 2(1), (2), Sch 1, para 1
Sch 1, Pt I, Group 2 rev in pt by Export of Goods (Control) 2003 art 2(1), (3), Sch 2
Sch 1, Pt III am by Export of Goods (Control) 2003 art 2(1), (2), Sch 1, para 2
Sch 1, Pt III rev in pt by Export of Goods (Control) 2003 art 2(1), (3), Sch 2
Sch 1, Contents rev in pt by Export of Goods (Control) 2002 art 2(1), (2)
Sch 1, Pt I, Group 3 rev by Export of Goods (Control) 2002 art 2(1), (3)
Sch 1, Pt III, ML4 am by Export of Goods (Control) 2002 art 2(1), (6)
Sch 1, Pt III, ML8 subst by Export of Goods (Control) 2002 art 2(1), (8), Schedule
Sch 1, Pt III, ML10 am by Export of Goods (Control) 2002 art 2(1), (7)
Sch 1, Pt III, para 2 defn(s) rev by Export of Goods (Control) 2002 art 2(1), (4)
Sch 1, Pt III, para 2 defn(s) added by Export of Goods (Control) 2002 art 2(1), (5)

Notes:

The control on export of equipment, devices and components described in entries 3A001 or 3A002, other than those described in sub-heads a.3. to a.10. or sub-head a.12. of entry 3A001, which are specially designed for, or which have the same functional characteristics as other equipment, is determined by the export control requirements applying to that other equipment.

The control on export of integrated circuits described in sub-heads a.3. to a.9. or sub-head a.12. of entry 3A001, which are unalterably programmed or designed for a specific function in a piece of equipment, is determined by the export control requirements applying to that other equipment.

N.B.:

When the export control requirements applying to the equipment cannot be determined, the integrated circuits are evaluated against the parameters in entry 3A001.

For silicon based microcomputer microcircuits or micro-controller microcircuits, having an operand (data) word length of 8 bits or less, the export control requirements thereof are determined only in sub-head a.3. of entry 3A001.

Electronic devices and components:

General purpose integrated circuits, as follows:

Notes:

Wafers (finished or unfinished), in which the function has been determined, are evaluated against the parameters of this head.

Integrated circuits include the following types:

Monolithic integrated circuits;
Hybrid integrated circuits;
Multichip integrated circuits;
Film type integrated circuits, including silicon-on-sapphire integrated circuits;
Optical integrated circuits.

Integrated circuits, designed or rated as radiation hardened to withstand either of the following:

a total dose of 5 × 10⁵ rads(Si), or higher; or

a dose rate upset of 5 × 10⁸ rads(Si)/s or higher;

Note:
For integrated circuits designed or rated against neutron or transient ionising radiation, see Group 1 of Part III of this Schedule.

Microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, electrical erasable programmable read-only memories (EEPROMs), static random-access memories (SRAMs), storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or optical integrated circuits for signal processing, field programmable gate arrays, field programmable logic arrays, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, or Fast Fourier Transform (FFT) processors, as follows:

Rated for operation at an ambient temperature above 398 K (125°C);

Rated for operation at an ambient temperature below 218 K (-55°C); or

Rated for operation over the entire ambient temperature range from 218 K (-55°C) to 398 K (125°C);

Note:
This sub-head does not apply to integrated circuits for civil automobiles or railway train applications.

Microprocessor microcircuits, microcomputer microcircuits and microcontroller microcircuits, having any of the following:Note: Sub-head a.3. of this entry includes digital signal processors, digital array processors and digital coprocessors.

An arithmetic logic unit with an access width of 32 bit or more and a composite theoretical performance (CTP) of 80 million theoretical operations per second (Mtops) or more;

Manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; or

More than one data or instruction bus or serial communication port for external interconnection in a parallel processor with a transfer rate exceeding 2.5 Mbyte/s;

Electrically erasable programmable read-only memories (EEPROMs) static random-access memories (SRAMs) and storage integrated circuits manufactured from a compound semiconductor, as follows:

EEPROMs with a storage capacity:

Exceeding 16 Mbit per package for flash memory types; or

Exceeding either of the following limits for all other EEPROMtypes:

4 Mbit per package; or

1 Mbit per package and having a maximum access time of lessthan 80 ns;

SRAMs with a storage capacity:

Exceeding 4 Mbit per package; or

Exceeding 1 Mbit per package and having a maximum access time of less than 20 ns;

Storage integrated circuits manufactured from a compoundsemiconductor;

Analogue-to-digital and digital-to-analogue converter integrated circuits, as follows:

Analogue-to-digital converters having any of the following:

A resolution of 8 bit or more, but less than 12 bit, with a total conversion time to maximum resolution of less than 10 ns;

A resolution of 12 bit with a total conversion time to maximumresolution of less than 200 ns; or

A resolution of more than 12 bit with a total conversion time to maximum resolution of less than 2 microseconds;

Digital-to-analogue converters with a resolution of 12 bit or more, and a settling time of less than 10 ns;

Electro-optical or optical integrated circuits for signal processing having all of the following:

One or more internal laser diodes;

One or more internal light detecting elements; and

Optical waveguides;

Field programmable gate arrays having either of the following:

An equivalent usable gate count of more than 30,000 (2 input gates); or

A typical basic gate propagation delay time of less than 0.4 ns;

Field programmable logic arrays having either of the following:

An equivalent usable gate count of more than 30,000 (2 input gates); or

A toggle frequency exceeding 133 MHz;

Neural network integrated circuits;

10.

Custom integrated circuits, for which either the function is unknown, or the control status of the equipment in which the integrated circuit will be used is unknown, having any of the following:

More than 144 terminals;

A typical basic gate propagation delay time of less than 0.4 ns; or

An operating frequency exceeding 3 GHz;

11.

Digital integrated circuits based upon any compound semiconductor and having either of the following:

An equivalent gate count of more than 300 (2 input gates); or

A toggle frequency exceeding 1.2 GHz;

Note: This sub-head does not apply to microprocessor microcircuits, microcomputer microcircuits, microcontroller microcircuits, electrical erasable programmable read-only memories (EEPROMs), static random-access memories (SRAMs), storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or optical integrated circuits for signal processing, field programmable gate arrays, field programmable logic arrays, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, or Fast Fourier Transform (FFT) processors.

12.

Fast Fourier Transform (FFT) processors having any of the following:

A rated execution time for a 1,024 point complex FFT of less than 1 ms;

A rated execution time for an N-point complex FFT of other than 1,024 points of less than N log₂ N/10,240 ms, where N is the number of points; or

A butterfly throughput of more than 5.12 MHz;

Microwave or millimetre wave devices:

Electronic vacuum tubes and cathodes, as follows:

Notes:
1. 1.
  
  For frequency agile magnetron tubes, see entry ML11 in Group 1 of Part III of this Schedule.
2. 2.
  
  Sub-head b.1. of this entry does not specify tubes designed or rated to operate in the Standard Civil Telecommunications Bands at frequencies not exceeding 31 GHz.

a.
Travelling wave tubes, pulsed or continuous wave, as follows:
1. 1.
  
  Operating at frequencies higher than 31 GHz;
2. 2.
  
  Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;
3. 3.
  
  Coupled cavity tubes, or derivatives thereof with an instantaneous bandwidth of more than 7% or a peak power exceeding 2.5 kW;
4. 4.
  Helix tubes, or derivatives thereof, with any of the following characteristics:
  1. a.
    
    An instantaneous bandwidth of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5;
  2. b.
    
    An instantaneous bandwidth of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or
  3. c.
    
    Space qualified;
b.

Crossed-field amplifier tubes with a gain of more than 17 dB;
c.
Impregnated cathodes for electronic tubes, with either of the following:
1. 1.
  
  Having a turn on time to rated emission of less than 3 seconds; or
2. 2.
  
  Producing a continuous emission current density at rated operating conditions exceeding 5 A/cm²;

Microwave integrated circuits or modules containing monolithic integrated circuits operating at frequencies exceeding 3 GHz;

Note: Sub-head b.2. of this entry does not specify circuits or modules for equipment designed or rated to operate in the Standard Civil Telecommunications Bands at frequencies not exceeding 31 GHz.

Microwave transistors rated for operation at frequencies exceeding 31 GHz;

Microwave solid state amplifiers, as follows:

Operating at frequencies exceeding 10.5 GHz and having an instantaneous bandwidth of more than half an octave;

Operating at frequencies exceeding 31 GHz;

Electronically or magnetically tunable band-pass or band-stop filters having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (f_max/f_min) in less than 10 microseconds with either:

A band-pass bandwidth of more than 0.5% of centre frequency; or

A band-stop bandwidth of less than 0.5% of centre frequency;

Microwave assemblies capable of operating at frequencies exceeding 31 GHz;

Mixers and converters designed to extend the frequency range of equipment described in heads c., e. or f. of entry 3A002 beyond the limits stated therein;

Acoustic wave devices, as follows, and specially designed components therefor:

Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., signal processing devices employing elastic waves in materials), having any of the following:

A carrier frequency exceeding 2.5 GHz;

A carrier frequency of 2.5 GHz or less, and:

A frequency side-lobe rejection exceeding 55 dB;

A product of the maximum delay time and the bandwidth (time in microseconds and bandwidth in MHz) of more than 100; or

A dispersive delay of more than 10 microseconds; or

A carrier frequency exceeding 1 GHz and a bandwidth of 250 MHz or more;

Bulk (volume) acoustic wave devices (i.e., signal processing devices employing elastic waves) which permit direct processing of signals at frequencies exceeding 1 GHz;

Acoustic-optic signal processing devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

Electronic devices or circuits containing components, manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of the superconductive constituents, with any of the following:

Electromagnetic amplification:

At frequencies equal to or less than 31 GHz with a noise figure of less than 0.5 dB; or

At frequencies exceeding 31 GHz;

Current switching for digital circuits using superconductive gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10⁻¹⁴ J; or

Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10,000;

High energy devices, as follows:

Batteries, as follows:

Note: Sub-head e.1. of this entry does not specify batteries with volumes equal to or less than 27 cm³ (e.g., standard C-cells or R14 batteries).

Primary cells and batteries having an energy density exceeding 480 Wh/kg and rated for operation in the temperature range from below 243 K (-30°C) to above 343 K (70°C);

Rechargeable cells and batteries having an energy density exceeding 150 Wh/kg after 75 charge/discharge cycles at a discharge current equal to C/5 hours (C being the nominal capacity in ampere hours) when operating in the temperature range from below 253 K (-20°C) to above 333 K (60°C);

Note: Energy density is obtained by multiplying the average power in watts (average voltage in volts times average current in amperes) by the duration of the discharge in hours to 75% of the open circuit voltage divided by the total mass of the cell (or battery) in kg.

Space qualified and radiation hardened photovoltaic arrays with a specific power exceeding 160 W/m² at an operating temperature of 301 K (28°C) under a tungsten illumination of 1 kW/m² at 2,800 K (2,527°C);

High energy storage capacitors, as follows^f1:

Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) having all of the following:

A voltage rating equal to or more than 5 kV;

An energy density equal to or more than 250 J/kg; and

A total energy equal to or more than 25 kJ;

Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) having all of the following:

A voltage rating equal to or more than 5 kV;

An energy density equal to or more than 50 J/kg;

A total energy equal to or more than 100 J; and

A charge/discharge cycle life equal to or more than 10,000;

Superconductive electromagnets or solenoids specially designed to be fully charged or discharged in less than one second, having all of the following^f2:

Energy delivered during the discharge exceeding 10 kJ in the first second;

Inner diameter of the current carrying windings of more than 250 mm; and

Rated for a magnetic induction of more than 8 T or overall current density in the winding of more than 300 A/mm²;

Note: Sub-head e.3. of this entry does not specify superconductive electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

Circuits or systems for electromagnetic energy storage, containing components manufactured from superconductive materials specially designed for operation at temperatures below the critical temperature of at least one of their superconductive constituents, having all of the following:

Resonant operating frequencies exceeding 1 MHz;

A stored energy density of 1 MJ/m³ or more; and

A discharge time of less than 1 ms;

Flash discharge type X-ray systems, and tubes therefor, having all of the following^f3:

A peak power exceeding 500 MW;

An output voltage exceeding 500 kV; and

A pulse width of less than 0.2 microsecond;

Rotary input type shaft absolute position encoders having either of the following:

A resolution of better than 1 part in 265,000 (18 bit resolution) of full scale; or

An accuracy better than ± 2.5 seconds of arc.

3A002

General purpose electronic equipment:

Recording equipment, as follows, and specially designed test tape therefor:

Analogue instrumentation magnetic tape recorders, including those permitting the recording of digital signals (e.g., using a high density digital recording (HDDR) module), having any of the following:

A bandwidth exceeding 4 MHz per electronic channel or track;

A bandwidth exceeding 2 MHz per electronic channel or track and having more than 42 tracks; or

A time displacement (base) error, measured in accordance with applicable Inter Range Instrumentation Group (IRIG) or Electronic Industries Association (EIA) documents, of less than ± 0.1 microsecond;

Digital video magnetic tape recorders having a maximum digital interface transfer rate exceeding 180 Mbit/s, except: those specially designed for television recording using a signal format standardized or recommended by the International Radio Consultative Committee (CCIR) or the International Technical Commission (IEC) for civil television applications;

Digital instrumentation magnetic tape data recorders employing helical scan techniques or fixed head techniques, having either of the following:

A maximum digital interface transfer rate exceeding 175 Mbit/s; or

Space qualified;

Note: Sub-head a.3. of this entry does not specify analogue magnetic tape recorders equipped with HDDR conversion electronics and configured to record only digital data.

Equipment, with a maximum digital interface transfer rate exceeding 175 Mbit/s, designed to convert digital video magnetic tape recorders for use as digital instrumentation data recorders;

Waveform digitisers and transient recorders with both of the following^f4:

Digitising rates equal to or more than 200 million samples per second and a resolution of 10 bits or more; and

A continuous throughput of 2 Gbits/s or more;

Note: For those instruments with a parallel bus architecture, the continuous throughput rate is the highest word rate multiplied by the number of bits in a word. In this entry, “continuous throughput” means the fastest data rate the instrument can output to mass storage without the loss of any information whilst sustaining the sample rate and analogue-to-digital conversion.

Frequency synthesiser electronic assemblies having a frequency switching time from one selected frequency to another of less than 1 ms;

Signal analysers, as follows:

Capable of analysing frequencies exceeding 31 GHz;

Dynamic signal analysers with a real-time bandwidth exceeding 25.6 kHz; except:

Those using only constant percentage bandwidth filters (also known as octave or fractional octave filters);

Frequency synthesised signal generators producing output frequencies, the accuracy and short term and long term stability of which are controlled, derived from or disciplined by the internal master frequency, and having any of the following:

A maximum synthesised frequency exceeding 31 GHz;

A frequency switching time from one selected frequency to another of less than 1 ms; or

A single sideband (SSB) phase noise better than -(126 + 20 log₁₀F − 20 log₁₀f) in dBc/Hz, where F is the off-set from the operating frequency in Hz and f is the operating frequency in MHz;

Note: Head d. of this entry does not specify equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result.

Network analysers with a maximum operating frequency exceeding 31 GHz;

Note: Head e. of this entry does not specify swept frequency network analysers with a maximum operating frequency not exceeding 40 GHz and which do not contain a data bus for remote control interfacing.

Microwave test receivers with both of the following:

A maximum operating frequency exceeding 31 GHz; and

Capable of measuring amplitude and phase simultaneously;

Atomic frequency standards having either of the following characteristics:

Long term stability (aging) less (better) than 1 × 10⁻¹¹/month; or

Note: Sub-head g.1. of this entry does not specify non-space qualified rubidium standards.

Space qualified;

Emulators for microcircuits specified in sub-heads a.3. or a.9. of entry 3A001.

Note: Head h. of this entry does not specify emulators designed for a family which contains at least one device not specified in sub-heads a.3. or a.9. of entry 3A001.

3A101

Electronic devices and components, other than those specified in entry 3A001, as follows:

Analogue-to-digital converters, usable in missiles, designed to meet military specifications for ruggedized equipment;

Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators.

Note: Head b of this entry does not specify goods specially designed for medical purposes.

3A201

Electronic devices and components, other than those specified in entry 3A001, as follows:

Capacitors with the following characteristics:

Voltage rating greater than 1.4 kV, energy storage greater than 10J, capacitance greater than 500 nF and series inductance less than 50 nH; or

Voltage rating greater than 750 V, capacitance greater than 250 nF and series inductance less than 10 nH;

Superconducting solenoidal electromagnets with all of the following characteristics:

Capable of creating magnetic fields of more than 2 Teslas (20 kilogauss);

With an L/D ratio (length divided by inner diameter) greater than 2;

With an inner diameter of more than 300 mm; and

With a magnetic field uniform to better than 1% over the central 50% of the inner volume.

Note: Head b. of this entry does not specify magnets specially designed for and exported as parts of medical nuclear magnetic resonance (NMR) imaging systems. In this entry, “as part of” does not necessarily mean physical part in the same shipment; separate shipments from different sources are allowed, provided the related export documents clearly specify that the shipments are dispatched “as part of” the same imaging systems.

Flash X-ray generators or pulsed electron accelerators with peak energy of 500 keV or greater, as follows;

except:
Accelerators that are component parts of devices designed for purposes other than electron beam or X-ray radiation (electron microscopy, for example) and those designed for medical purposes:
1. 1.
  Having an accelerator peak electron energy of 500 keV or greater but less than 25 MeV and with a figure of merit (K) of 0.25 or greater, where K is defined as:
  - K = 1.7 × 10³V^2.65Q;
  - where
  - V is the peak electron energy in million electron volts and Q is the total accelerated charge in coulombs if the accelerator beam pulse duration is less than or equal to 1 microsecond; if the accelerator beam pulse duration is greater than 1 microsecond, Q is the maximum accelerated charge in 1 microsecond [Q equals the integral of i with respect to t, over the lesser of 1 microsecond or the time duration of the beam pulse (Q = [integral] idt), where i is beam current in amperes and t is time in seconds]; or
2. 2.
  Having an accelerator peak electron energy of 25 MeV or greater and a peak power greater than 50 MW. [Peak power = (peak potential in volts) × (peak beam current in amperes)].
  - Notes:
  1. 1.
    
    Time duration of the beam pulse—In machines, based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 microsecond or the duration of the bunched beam packet resulting from one microwave modulator pulse.
  2. 2.
    
    Peak beam current—In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.

3A202

Oscilloscopes and transient recorders other than those specified in sub-head a.5. of entry 3A002, as follows; and specially designed components therefor:

Non-modular analogue oscilloscopes having a bandwidth of 1 GHz or greater;

Modular analogue oscilloscope systems having either of the following characteristics:

A mainframe with a bandwidth of 1 GHz or greater; or

Plug-in modules with an individual bandwidth of 4 GHz or greater;

Analogue sampling oscilloscopes for the analysis of recurring phenomena with an effective bandwidth greater than 4 GHz;

Digital oscilloscopes and transient recorders, using analogue-to-digital conversion techniques, capable of storing transients by sequentially sampling single-shot inputs at successive intervals of less than 1 ns (greater than 1 giga-sample per second), digitizing to 8 bits or greater resolution and storing 256 or more samples.

Notes:

Specially designed components specified in this entry are the following, for analogue oscilloscopes:

Plug-in units;

External amplifiers;

Pre-amplifiers;

Sampling devices;

Cathode ray tubes.

In this entry, the term “bandwidth” means the band of frequencies over which the deflection on the cathode ray tube does not fall below 70.7% of that at the maximum point measured with a constant input voltage to the oscilloscope amplifier.

3A225

Frequency changers (also known as converters or inverters) or generators, other than those specified in entry B10b.2.k. of Group 2 of Part III of this Schedule, having all of the following characteristics:

A multiphase output capable of providing a power of 40 W or more;

Capable of operating in the frequency range between 600 and 2000 Hz;

Total harmonic distortion below 10%; and

Frequency control better than 0.1%.

3A226

Direct current high-power supplies capable of continuously producing, over a time period of 8 hours, 100 V or greater with current output of 500 A or greater and with current or voltage regulation better than 0.1%.

3A227

High-voltage direct current power supplies capable of continuously producing, over a time period of 8 hours, 20,000 V or greater with current output of 1 A or greater and with current or voltage regulation better than 0.1%.

3A228

Switching devices, as follows:

Cold-cathode tubes (including gas krytron tubes and vacuum sprytron tubes), whether gas filled or not, operating similarly to a spark gap, containing three or more electrodes, and having all of the following characteristics:

Anode peak voltage rating of 2,500 V or more;

Anode peak current rating of 100 A or more; and

Anode delay time of 10 microsecond or less;

Triggered spark-gaps having an anode delay time of 15 microsecond or less and rated for a peak current of 500 A or more;

Modules or assemblies with a fast switching function having all of the following characteristics:

Anode peak voltage rating greater than 2,000 V;

Anode peak current rating of 500 A or more; and

Turn-on time of 1 microsecond or less.

3A229

Firing sets and equivalent high-current pulse generators (for controlled detonators), as follows^f5:

Explosive detonator firing sets designed to drive multiple controlled detonators specified in entry 3A232;

Modular electrical pulse generators (pulsers) designed for portable, mobile or ruggedized use (including xenon flash-lamp drivers) having all the following characteristics:

Capable of delivering their energy in less than 15 microsecond;

Having an output greater than 100 A;

Having a rise time of less than 10 microsecond into loads of less than 40 ohms (rise time is the time interval from 10% to 90% current amplitude when driving a resistive load);

Enclosed in a dust-tight enclosure;

No dimension greater than 254 mm;

Weight less than 25 kg; and

Specified for use over an extended temperature range (223 K [-50°C] to 373 K [100°C]) or specified as suitable for aerospace use.

3A230

High-speed pulse generators with output voltages greater than 6 volts into a less than 55 ohm resistive load, and with pulse transition times less than 500 picoseconds.

In this entry, “pulse transition time” means the time interval between 10% and 90% voltage amplitude.

3A231

Neutron generator systems, including tubes, designed for operation without an external vacuum system and utilizing electrostatic acceleration to induce a tritium-deu-terium nuclear reaction.

3A232

Detonators and multipoint initiation systems, as follows^f6:

Electrically driven explosive detonators, the following:

Exploding bridge (EB);

Exploding bridge wire (EBW);

Slapper;

Exploding foil initiators (EFI);

Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface (over greater than 5000 mm²) from a single firing signal (with an initiation timing spread over the surface of less than 2.5 microseconds).

Notes:

This entry does not specify detonators using only primary explosives, such as lead azide.

The detonators in this entry all utilise a small electrical conductor (bridge, bridge wire or foil) that explosively vaporizes when a fast, high-current electrical pulse is passed through it. In nonslapper types, the exploding conductor starts a chemical detonation in a contacting high-explosive material such as PETN (Pentaerythritoltetranitrate). In slapper detonators, the explosive vaporization of the electrical conductor drives a flyer or slapper across a gap and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by a magnetic force. The term 'exploding foil' detonator may refer to either an EB or a slapper-type detonator.

3A233

Mass spectrometers, other than those specified in entry B20g. of Group 2 of Part III of this Schedule, capable of measuring ions of 230 atomic mass units or greater and having a resolution of better than 2 parts in 230, as follows; and ion sources therefor:

Inductively coupled plasma mass spectrometers (ICP/MS);

Glow discharge mass spectrometers (GDMS);

Thermal ionization mass spectrometers (TIMS);

Electron bombardment mass spectrometers which have a source chamber constructed from, lined with or plated with materials resistant to UF₆;

Molecular beam mass spectrometers as follows:

Which have a source chamber constructed from, lined with or plated with stainless steel or molybdenum and have a cold trap capable of cooling to 193 K (-80°C) or less; or

Which have a source chamber constructed from, lined with or plated with materials resistant to UF₆; or

Mass spectrometers equipped with a microfluorination ion source designed for use with actinides or actinide fluorides.

3A990

Apparatus or devices, other than those specified in entry PL5006 of Group 1 of Part III of this Schedule or entries 3A229 to 3A232 of this Group, designed for the handling, control, discharging, decoying, jamming, detonation, disruption or detection of explosive devices or improvised explosive devices;

except:
1. 1.
  
  Inspection devices not employing electronic management;
2. 2.
  
  X-ray apparatus or devices, not specified elsewhere in this Group.

Annotations

Footnotes

f1: See also entry 3A201.a.
f2: See also entry 3A201.b.
f3: See also entry 3A101.b. and 3A201.c.
f4: See also entry 3A202.
f5: See also Group 1 of Part III of this Schedule.
f6: See also Group 1 of Part III of this Schedule.