Schedule 3 TOTAL EXEMPTIONS FROM CUSTOMS DUTIES SPAIN

Lesser or Greenland halibut (Reinhardtius hippoglossoides), fresh, chilled or frozen, headless or in pieces

Sturgeon, fresh, chilled or frozen, whole, headless or in pieces, intended for processing

Lump fish (Cyclopterus lumpus) with roe, fresh or chilled for processing

Soft roes, frozen, intended for the manufacture of deoxyribonucleic acid (DNA)

Hard fish roes, fresh, chilled or frozen

Hard fish roes, salted or in brine

Mushrooms, excluding cultivated mushrooms within the meaning of subheading 07.01 Q I, in salted or sulphur water to which other substances ensuring their temporary preservation have been added, but not specially prepared for immediate consumption

Mushrooms, excluding cultivated mushrooms within the meaning of subheading 07.01 Q I, dried, dehydrated or evaporated, whole or in identifiable slices or pieces intended for treatment other than simple repacking for retail sale

Beans, white, dried, of the species Phaseolus vulgaris of which not more than 2% by weight are retained by a screen with apertures of 8mm in diameter

Dates, fresh or dried, intended for the processing industry, other than for the production of alcohol

Dates, fresh or dried, for packing for retail sale into immediate packings of a net capacity not exceeding 11 kg

Large American cranberry, fresh (Vaccinium macrocarpum)

Rose hips, fresh

Fruit of the species Vaccinium, whether or not cooked, in frozen state, not containing added sugar

Rose hips, whether or not cooked, in frozen state not containing added sugar

Dates, frozen, in immediate packings of a net capacity of 5 kg or more, not intended for the production of alcohol

Ground paprika for use in animal feedingstuffs

Extract of dewaxed pyrethrum

Hard fish roes, cleansed of adherent organs and simply salted or in brine

Crabs of the species “King” (Paralithodes camchaticus), “Hanasaki” (Paralithodes brevipes), “Kegani” (Erimacrus isenbecki), “Queen” and “Snow” (Chinoecetes spp.), “Red” (Geryon quinquedens), “Rough stone” (Neolithodes asperrimus) Lithodes antarctica, “Mud” (Scylla serrata), “Blue” (Portunus spp.), simply boiled in water and shelled, whether or not frozen, in immediate packings of a net capacity of 2 kg or more

Fish or marine mammal solubles

Crude light oils containing by weight:

• not less than 10% of vinyltoluenes

• not less than 10% of indene

• not less than 1% and not more than 5% naphthalene

Mixture of hydrocarbons, consisting of 85% or more of linear paraffins by weight, with chain lengths of eight to 16 carbon atoms, and of not more than 13% of alkylbenzenes by weight, with linear chains of 10 to 12 carbon atoms

Synthetic paraffin wax having a molecular weight of not less than 460 and not more than 1,560

I-Alkenes containing a C 18 to C 30 carbon chains

Helium

Alloys of cerium and other rare earth metals containing not less than 47% by weight of cerium

Tellurium dioxide

Iodine pentafluoride

Aluminium hydroxide containing by weight not more than:

• 0.15% of silicone dioxide

• 0.06% of diiron trioxide

• 0.2% of disodium oxide

Chromium dioxide

Manganese oxide containing not less than 77% by weight of manganese

Potassium hydrogenperoxomonosulphate

Potassium nitrite for the manufacture of cooling and cutting fluids used in the working of metal or metal carbides (a)

penta Calcium hydroxide tris(orthophosphate) for use in non-ferrous metallurgy

Lithium carbonates not corresponding to the following specifications in the form of white powder, containing 98.5% or more of Li₂CO₁ and:

• less than 2 ppm of arsenic

• less than 200 ppm of calcium

• less than 200 ppm of chlorides

• less than 20 ppm of iron

• less than 150 ppm of magnesium

• less than 20 ppm of heavy metals

• less than 300 ppm of potassium

• less than 300 ppm of sodium

• less than 200 ppm of sulphates

Disodium tetraborate pentahydrate

Potassium permanganate

Calcium wolframate, for the manufacture of ferro-alloys or deca-ammonium 41-oxododecawolframate (ammomium paratungstate) (a)

Hydrotalcite (INN)

Carboplatin (INN)

Carboplatin (INN)

Lathanum bromide oxide

Phosphides of iron (ferro-phosphorus) containing by weight:

• not less than 68% and not more than 72% of iron

• not less than 22% and not more than 26% of phosphorus

• not more than 3.5% of silicon

of which not less than 99% by weight is of a particle size of less than 20 micrometres, for the manufacture of varnishes or paints (a)

Silane (silicone hydride)

beta-Pinene

Vinyltoluenes

Tricyclo (8.2.2.2.^4,7] hexadeca-1(12),4,6,10,13,15-hexaene

p-Cymene

1,3-Diisopropylbenzene with a purity of not less than 94% by weight

Carbon tetrafluoride (tetrafluoromethane)

Hexafluoropropene

1,2,3-Trichloropropenes

Vinyl bromide

Bromochloromethane

1,6,7,8,9,14,15,16,17,17,18,18-Dodecachloropentacyclo[12.2.1.1.^6,9.0^2,13.0^5,10]octadeca-7,15-diene, for use in the manufacture of polyamide (a)

Di-or tetrachlorotricyclo [8.2.2.2^4,7] hexadeca-112),4,6,10,13,15-hexaene, mixed isomers

Methanesulphonic acid

Nitromethane

1-Nitropropane

2-Nitropropane

Nitroethane

Methansulphonyl chloride

2,2,2-Trifluorethyl trichloromethanesulphonate

2-Methylpropan-2-ol (tert-butyl alcohol) with a purity of not less than 90% but not more than 96% by weight

Hexane-1,6-diol

Butane-1,3-diol

2,4,7,9-Tetramethyldec-5-yne-4,7-diol

2,2-Bis(bromomethyl)propanediol

Labd-14-ene-8,13-diol

2-Isopropylphenol

3-Ethylphenol

4,4'-(2,3-Dimethyltetramethylene)dipyrocatechol, not less than 98% pure

6,6'6"-Tri—tert-butyl-4,4',4"-(1-methylpropan-1-yl-3-ylidene)tri—m-cresol, whether or not containing toluene of crystallization

2,5-Di(tert-pentyl)hydroquinone

4,4'-(Perfluoroisopropylidene)diphenol

2,4-Dinitro-6-octylphenol

2-Bromo-6-methoxynaphthalene

Bis (phenoxyphenoxy) benzene, mixed isomers

1,2-Bis (2,4,6,-tribromophenoxy) ethane for use in the manufacture of acrylonitrile-butadiene-styrene (ABS)

3,3'-Oxydi(propylene glycol)

2-(2-Chloroethoxy)ethanol

2,2'-[Isopropylidenebis(2,6-dibromo-4,1-phenyleneoxy)diethanol

1,2-Epoxy-4-(epoxyethyl)cyclohexane

8,9-Epoxy-3-(3,4-epoxycyclohexyl)-2,4-dioxaspiro [5,5] undecane

5-Methylhexan-2-one

3,3-Dimethylbutanone

Refined natural bornan-2-one(camphor)

11—alpha, 17,21-Trihydroxy-16—beta-methylpregna-1,4-diene-3,20-dione

4-Methoxy-4-methylpentan-2-one

6'-Methoxy-2'-propiononaphthone

Ubidecarenone (INN) (Coenzyme Q-10)

1,4-Naphthoquinone

1-Chloro-3,3-dimethylbutanone

20-Oxopregna-5,16-dien-3—beta-yl acetate

Alclometasone 17,21-dipropionate (INNM)

1-Isopropyl-2,2-dimethyltrimethylene diisobutyrate

2,3-Epoxypropyl methacrylate

Butyl perchlorocrotonate

Crotonic acid

Azelaic acid and sebacic acid

Sodium 1,2-bis(cyclohexyloxycarbonyl) ethanesulphonate

Benzene-1,2,4-tricarboxylic acid

Benzene-1,2,4-tricarboxylic acid 1,2-anhydride

Tetrachlorophthalic anhydride

Tetrabromophthalic anhydride

Benzene-1,2,4-tricarbonyl trichloride

Malic acid and its salts, with anL-isomer of not less than 94%

2,2-Bis(hydroxymethyl)propionic acid

Octadecyl-3-(3,5-di—tert-butyl-4-hydroxyphenyl)propionate

Pentaerythritol tetrakis[3-(3,5-di—tert-butyl-4-hydroxyphenyl)propionate]

Dinoprostone (INN)

Alprostadil (INN)

3,4-Epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate

2,6-Dimethoxybenzoic acid

Methyl 5-(2,4-dichlorophenoxy)-2-nitrobenzoate

1,1'-Dimethyl-2,2'-oxydiethylene tetraphenyl bis(phosphite)

0,0'-Dioctadecyl pentaerythritol bis (phosphite)

0,0'-Bis(2,4-di—tert-butylphenyl) pentaerythritol bis(phosphite)

tert-Butylamine

1,1,3,3-Tetramethylbutylamine

1,1-Dimethylprop-2-ynylamine

N,N,N',N'— Tetrabutylhexamethylenediamine

Cyclohex-1,3-ylenediamine (1,3-diaminocyclohexane)

alpha',alpha',alpha'-Trifluoro-2,3-xylidine

m-Phenylenebis(methylamine)

1,8-Naphthlenediymine

Dinoprost (INN), trometamol (INN) salt

(+)-4-Dimethylamino-3-methyl-1,2-diphenylbutan-2-ol

1-Dioxy-1-(octylamino)—D-glucitol

Dobutamine (INN) and its salts

Ketamine hydrochloride (INNM)

Tranexamic acid (INN)

beta-Alanine

Metipranolol (INN)

Diethyl-1,3-benzodioxol-5-ylaminomethylenemalonate

6-Acetyl-1,3-benzodioxol-5-ylammonium chloride

Levodopa (INN)

Nadolol (INN)

Methyldopa (INN)

Indenolol hydrochloride (INNM)

(3-Methacrylamidopropyl)trimethylammonium chloride

2-Acrylamido-2-methylpropanesulphonic acid and its sodium or ammonium salts

Barbituric acid

Bendiocarb (ISO)

Flutamide (INN)

3,5-Dichloro-N-(1,1-dimethylprop-2-ynyl)benzamide

1,2-Benzisothiazol-3-one 1,1-dioxide, sodium salt

3,3',4,4',5,5',6,6'-Octabromo—N,N'-ethylenediphthalamide

[}6)—N-(alpha-Cyano-4-hydroxy-3-methoxy—alpha-methylphenetyl)acetamide

2-(3-Phenoxyphenyl)propionitrile

20-Hydroxyminopregna-5,16-dien-3-yl acetate

Carbidopa (INN)

Robenidine-hydrochloride (INNM)

N,N-Diethylhydroxylamine

3,3'-Bis(3,5-di—tert-buty-4-hydroxyphenyl)N,N'-bipropionamide

2,4,6-Trichlorophenylhydrazine

0,0-Bis(4—tert-butylphenyl)—N-cyclohexylphosphoramidothioate

Methylenedicyclohexyl di-isocyanate, mixed isomers

p-Phenylene diisocyanate

trans-(Cyclohex-1,4-ylene diisocyanate) for the production of thermoplastic polyurethane elastomers (a)

3,3-Dimethylbiphenyl-4,4-diyldiisocyanate

2-Methyl-2-(methylthio)propionaldehyde oxime

Thiophenol

2,2'-Thiodiethyl bis[3-(3,5-di—tert-butyl-4-hydroxyphenyl)propionate]

4,4'-Sulphonyldiphenol with a purity of not less than 99.5% by weight

Probucol (INN)

Ethoprophos (ISO)

3-{(Z)-6-[(S)-2,2-Dimethylcyclopropanecarboxamido]-6-(sodio-oxycarbonyl)hex-5-enylthio)}L-alanine

Aldicarb (ISO), dissolved in dichloromethane

2-Diphenylphosinobenzoic acid

Crystalline dimethyltin dichloride in the form of powder, for the production of goods falling within Chapter 70 (a)

Chlorodiphenylphosphine

Octrizole (INN)

Drometrizole (INN)

2,6-Di—tert-butyl-4-[4,6-bis(octylthio)-1,3,5-triazin-2-ylamino)phenol

Butorphanol (INN) and its salts

Timolol (INN)

Clotiazepam (INN)

1,4-Diazabicyclo[2,2,2]octane (triethylenediamine)

2,4-Di—tert-butyl-6-(5-chlorobenzotriazol-2-yl)phenol

Carpipramine-dihydrochloride (INNM)

2,3-Dihydro-2,2-dimethylbenzofuran-7-ol

1-Ethyl-1,4-dihydro-4-oxo[1,3]dioxolo[4,5—g]cinnoline-3-carbonitrile

Diphemanil metilsulphate (INN)

(25R)-Spirost-5-en-3—beta-ol (diosgenin) and its esters

Azatadine-dimaleate (INNM)

Amprolium-hydrochloride (INNM)

2-(4-Pyridyl)ethanesulphonic acid

Prifinium bromide (INN)

Glucurolactone (INN)

2-Chlorodibenz[bf][1,4]oxazepin-11(10H]-one

2,3,5,6-Tetrachloropyridine

Diltiazem hydrochloride (INNM)

(6R, 7R]-3-Acetoxymethyl-7-[(R)-2-formyloxy-2-phenylacetamido]-8-oxo-5-thia-1-azabicyclo[4,2,0]oct-2-ene-2-carboxylic acid and its salts and esters

Buspirone hydrochloride (INNM)

Adenosine phosphate (INN)

3-(1-Ethyl-1-methylpropyl)isoxazol-5-ylamine

4,4'—Bis(hydroximinomethyl)-1,1'-(oxydimethylene)=dipyridinium dichloride

Encainide hydrochloride (INNM)

5-Bromopyrimidine

Minoxidil (INN)

Triazolam (INN)

Diazoxide (INN)

(6R, 7R)-7-Amino-3-(5-methyl-1,3,4-thiadiazool-2-ylthiomethyl)-8-oxo-5-thia-l-azabicyclo[4,2,0]oct-2-ene-2-carboxylic acid and its salts

Captopril (INN)

Fluxixin meglumine (INNM)

Tryptophan

2-Chloro-5-trifluoromethylpyridine

Norfloxacin (INN)

Lasalocid sodium (INNM)

1-Hydroxy-4-[1-(4-hydroxy-3-methoxycarbonyl-1-naphthyl)-3-oxo-1H,3H-benzo[de]isochromen-1-yl]-6-octadecyloxy-2-naphthoic acid

Isonicotinonitrile

Tegafur (INN)

Bis(2-hydroxyethyl) (9,10-dihydro-10-oxo-9-10λ⁵-phospha-10-phenanthryl-methyl)succinate

13,14,15,16-Tetranorlabdano-12,8alpha-lactone

5-Nitrofurfurylidene di(acetate)

Tetrahydrofuran, containing not more than 40 mg per litre in total of tetrahydro-2-methylfuran and tetrahydro-3-methylfuran for the manufacture ofalpha-4-hydroxybutyl—omega-hydroxypoly (oxytetramethylene)

Estazolam (INN)

Timpedium bromide (INN)

6-Hydroxy-2-phenylpyridazin-3(2H)one

Quinethazone (INN)

Sulfaguanidine (INN)

Sulfathiazole (INN)

4-Chloro-5-sulphamoylanthranil—o-toluidide

3-[1-(7-Hexadecane-1-sulphonamidoindol-3-yl)-3-oxo-1H,3H-benzo-[de] isochromen-1-yl]indole-7-carboxylic acid

(2,3-Dihydro-3-oxobenz[d]isothiazol-2-yl)—N-5-methylisoxazol-3-ylacetamideS,S-dioxide

Nicotinic acid (INN)

Dexpanthenol (INN)

Folic acid (INN)

Nicotinamide (INN)

Serum gonadotrophin (INN)

Betamethasone 17,21-dipropionate (INNM)

Diflorasone di(acetate) (INNM)

Calcitonin (INN), salmon-type and its salts

Prasterone (INN)

Calcitonin (INN), porcine

Vindesine sulphate (INNM)

Ribose

Sucralfate (INN)

Sucrose benzoate, having a saponification equivalent of not more than 175

Epicillin (INN)

Piperacillin (INN)

Piperacillin sodium (INM)

Amphotericin B (INN)

Minocycline (INN) and its salts

Clindamycin (INN) and its salts and esters

Spectinomycin dihydrochloride (INNM), pentahydrate

Nystatin (INN)

Sisomicin sulphate (INNM)

Spectinomycin sulphate (INNM)

Tobramycin (INN) and its salts

Lincomycin (INN) and its salts and esters, for the manufacture of products falling within heading No. 30.03

Monensin (INN) and its salts

Cefaclor (INN) and its hydrates, salts and esters

Netilmicin sulphate (INNM)

Dibekacin sulphate (INNM)

Cefoxitin sodium (INNM)

Cefradine (INN)

Cefamandole (INN) and its salts and esters

Cefazolin (INN) and its salts

Latamoxef (INN) and its salts and esters

Josamycin (INN)

Josamycin propionate (INNM)

Ribostamycin sulphate (INNM)

Fumagillin dicyclohexylammonium (INNM)

Ceftezole (INN)

Aztreonam (INN)

Imipenem

Cefotetan (INN)

Ceftizoxime sodium (INNM)

Midecamycin (INN) and its acetates

Amikacin (INN) and its salts

Mitomycin (INN)

Bleomycin sulphate (INNM)

Aclarubicine hydrochloride (INNM)

Potassiumtert-butoxide

Tetanus immunoglobulin

Anti-tetanus immunoplasma

German measles immunoplasma

Whooping-cough immunoplasma

Rabies immunoplasma

Human albumin, whether or not in solution

Preserved serum derived from human blood

Anti-haemophilic globulin and anti-Rh₀ (D)-globulin derived from human blood

Mixture of oestrogens of equine origin, in powder form

Mixture of cefradine (INN) and arginine (INN)

Gamma-globulin, in solution, derived from human blood

Lyophilized gamma-globulin derived from human blood

Tanning extracts derived from gambier and myrobolan fruits

Inorganic colouring matter preparations mentioned in note 3 to Chapter 32, in hollow polyurethane spheres having a diameter of less than 200 micrometres

Glass, in the form of flakes, of a length not less than 0.1 mm and not more than 3.5 mm, of a thickness not less than two micrometres and not more than five micrometres

Glass in the form of powder or granules, with a silicon dioxide content of not less than 99% by weight

Polyurethane of 2,2'-(tert-butylimino)diethanol and 4,4'-methylenedicyclohexyl isocyanate, dissolved inN,N-dimethylacetamide, with a copolymer content of not less than 48% by weight

Copolymer ofp-cresol and divinylbenzene, dissolved inN,N-dimethylacetamide, with a copolymer content of not less than 48% by weight

alpha-Methyl—omega-hydroxypoly(oxypropylene), having an average molecular weight of between 240 and 260

Mixture of docusate sodium (INN) and sodium benzoate

2-Alkyl-1-[2-(sodiooxycarbonylmethoxy)ethyl]-1-sodiooxycarbonylmethyl-2-imidazolinium hydroxide

Preparation containing not less than 30% by weight 2-Alkyl-1-[2-(sodiooxycarbonylmethoxy)ethyl]-1-sodiooxycarbonylmethyl-2-imidazolinium dodecyl sulphate

Bromelains (INN)

Mixture of sreptokinese (INN) and Streptodornase (INN)

Pyruvate: oxygen oxidoreductase

Lipoprotein lipase

Serrapeptase (INN)

Colour negative film, of a width not less than 75 mm and not more than 105 mm and of length of 100 m or more, for use in the manufacture of instant picture film packs (a)

Acid activated montmorillonite which, when examined by X-ray powder diffraction, shows four principal lines corresponding to crystal interplane spacing values of 0,44, 0,40, 0,33 and 0,25 nm the line corresponding to 0,40 nm being the most intense, for the manufacture of self-copy paper (a)

Hydroabietyl alcohol

tetra-Aluminium nonamagnesium dicarbonate hexacosahydroxide hepta hydrate coated with a surface active agent

Catalysts, consisting essentially of diphosphorus pentaoxide on an inert support

Catalysts, in the form of spherical grains with a diameter of not less than 1,4 mm and not more than 1,8 mm, consisting of boron trifluoride on an aluminium oxide support

Catalysts, in the form of rodlets having a length of not more than 5,0 mm and a diameter of not more than 3,6 mm, consisting of copper oxide and dichromium trioxide

Catalysts, consisting of copper chloride, supported on aluminium oxide, for the preparation of dichloroethane, ethylene, hydrochloric acid and oxygen, with a surface area of less than 90 m²/g (a)

Catalysts, consisting of chromium trioxide or dichromium trioxide, fixed on a silicon dioxide support with a pore volume, as determined by the nitrogen absorption method, of not less than 2 cm³/g

Catalysts, in the form of rodlets having a length of not less than 3 mm and not more than 6 mm and a diameter of not more than 3,8 mm, consisting of not less than 18% and not more than 21% by weight of dichromium trioxide and not less than 78% and not more than 81% by weight of aluminium oxide

Catalysts, in the form of granules, consisting of a mixture of oxides on a carrier of aluminium oxide and containing, by weight:

• not less than 12% and not more than 20% of nickel

• not less than 5% and not more than 10% of copper

• not less than 0,5% and not more than 1,5% of manganese

The pore volume is not less than 0,25 cm³/g and not more than 0,95 cm3/g and the apparent specific gravity is not less than 0,5 and not more than 1,25

Catalysts, in the form of grains, of which not less than 90% by weight have a particle size of less than 10 micrometres, consisting of a mixture of oxides on a carrier of magnesium silicate and containing, by weight:

• not less than 20% and not more than 35% of copper

• not less than 2% and not more than 3% of bismuth

The catalyst has an apparent specific gravity of not less than 0,2 and not more than 1,0

Catalysts, in the form of granules having a diameter of not more than 1,4 mm, consisting of cobalt oxide on a silicon dioxide support

Catalysts, in powder form, consisting of a mixture of titanium trichloride and aluminium chloride, containing not less than 20% and not more than 30% by weight of titanium and not less than 55% and not more than 72% by weight of chlorine

Catalysts, in the form of granules or rings having a diameter of not less than 3 mm and not more than 10 mm, consisting of silver supported on aluminium oxide, the silver content being not less than 10% and not more than 20% by weight

Catalysts consisting of ethyltriphenylphosphonium acetate, dissolved in methanol

Catalysts, consisting of copper chloride, supported on aluminium oxide, for the preparation and dichloroethane from ethylene, hydrochloric acid and oxygen, by the fixed bed process (a)

Catalysts, in the form of pellets, consisting of mixed vanadium and phosphorus oxides, containing not more than 0,5% by weight of one of the following elements: lithium, potassium, sodium cadmium or zinc, for use in the manufacture of maleic anhydride from butane

Catalysts, in the form of powder, consisting of a mixture of titanium, magnesium and aluminium compounds on a carrier of silicon dioxide, containing by weight:

• not less than 3 and not more than 6% of titanium.

• not less than 2 and not more than 3% of magnesium.

• not less than 0,3 and not more than 0,5% of aluminium.

for use in the production of polyethylene with a density of at least 0,935 g/cm¹

Catalysts, consisting of dialkyldimethylammoniumacetate containing chain lengths of 16 and 18 carbon atoms, suspended in organic solvent to a concentration of not less than 40% by weight

Sintered magnesite mixed with small quantities of mineral oils

A mixture of 5-ethyl-2-methyl-2-oxo-1,3,2λ⁵-dioxaphosphoran-5-ylmethyl methyl methylphosphonate and bis(5-ethyl-2-methyl-2-oxo-1,3,2λ⁵-dioxaphosphoran-5-ylmethyl)-methylphosphonate

Butylethylmagnesium dissolved in organic solvents to a concentration of not less than 19% but not more than 30% by weight

Mixed oxides of barium, bismuth, lead, titanium and zinc in powder form, having a barium content of not less than 5% and a titanium content of not less than 15% by weight, for use as dielectric materials during the manufacture of multilayer ceramic capacitors (a)

Calcined bauxite (refractory grade)

Diosegnin crude

4-(6-Fluoro-2-methylinden-3-ylmethyl)phenyl methyl sulphide dissolved in toluene

Mixtures ofx-butyl-4-4' isopropylenediphenol andx,x'-dibutyl-4,4'-isopropylidenediphenol

Mixture of nitromethane and 1,2-epoxybutane

Residues of manufacture containing not less than 40% by weight of 11—beta,17,20,21-tetrahydroxy-6-methylpregna-1,4-dien-3-one-21-acetate

Intermediate products from the manufacture of monensin salts

Tetramethylammonium hydroxide dissolved in methanol

Intermediate products of the antibiotics manufacturing process obtained from the fermentation ofStreptomyces tenebrariuys, whether or not dried

Products obtained by theN-ethylation of sisomicin (INN)

Intermediate products of the antibiotics manufacturing process obtained from the fermentation ofMicromonospora purpurea, whether or not dried

Cholic acid and 3—alpha, 12—alpha, dihydroxy-5—beta, cholan-24-oic acid (deoxycholic-acid), crude

Crude bile acids

Collodial antimony pentaoxide

Magnesium bromide 2-oxoperhydroazepin-1-ide dissolved inepsilon-caprolactam to a concentration of not less than 20% and not more than 25% by weight

Reaction products of dibutyl dihydrogendiphosphate and 1,2-epoxypropane for use in the production of non-rigid polyurethane (a)

2,3-Bis[2-(perfluoroalkyl)ethylthio]butane-1,4-diol

Intermediate products of the antibiotics manufacturing process obtained from the fermentation ofMicromonospora inyoensis, whether or not dried

Intermediate products of the antibiotics manufacturing process obtained from the fermentation ofStreptomyces kasugaensis, whether or not dried

Film consisting of the oxides of barium, calcium and either titanium or zirconium, mixed with binding materials

Mixture of amines derived from dimerized fatty acids with an average molecular weight of between 520 and 550

Mixture obtained by fermentation containing not less than 5% by weight peptides having the structure of the A chain of human insulin in the form of a salt of theS-sulphonate derivative

Mixture obtained by fermentation containing not less than 5% by weight peptides having the structure of the B chain of human insulin in the form of a salt of theS-sulphonate derivative

Crude lithium hypochlorite

Reaction mixture containing benzyl 3-isobutyryloxy-1-isopropyl, 2,2-dimethylpropyl phthalate and benzyl 3-isobutyryloxy-2,2,4-trimethylphenyl phthalate

Mixture of 2-(perfluoroalkyl)ethanethiols containing C⁶ to C¹⁴ perfluoroalkyl chains

Lyophilized extract of the blood cells of the crabLimulus polyphemus(“Limulus amoebocyte lysate”)

Colestipol-hydrochloride (INNM)

Polycondensation products of phenol and formaldehyde in the form of hollow spheres with a diameter of less than 150 micrometres

Polycondensation products of formaldehyde and a mixture of toluene-2-sulphonamide-and toluene-4-sulphonamide

Reflecting polyester sheeting embossed in a regular pyramidal pattern

Reflecting polyester sheeting in which microspheres are embedded

Transparent film consisting of polyester coated with a layer of indium and silver

Polyester film, having a thickness of not less than 74 micrometres and not more than 76 micrometres, for use in the manufacture of flexible magnetic discs (floppy discs) (a)

Reflecting laminated sheeting, metallized, consisting of one sheet of polyester and at least another sheet of polyester or other plastic material and coated on one side with an adhesive which is protected by a release sheet

Waste and scrap of photographic (including cinematographic) and X-ray film

Polyester of a mixture of isophthalic acid and terephthalic acid and 4,4'-isopropylidenediphenol

Waste and scrap from polyester film coated with a tungsten compound or with rare earth metal compounds

Poly(oxy-1,4-phenylenecarbonyl) in powder form

Poly(iminomethylene-1,3-phenylenemethyleneiminoadipoyl in one of the forms mentioned in note 3 (b) to Chapter 39

Film consisting of poly(epsilon-caprolactam) blended with:

• either not more than 10% by weight of polyethylene

• or not more than 10% by weight of a copolymer of ethylene with vinyl acetate

Poly(epsilon-caprolactam) film having a softening point of not less than 200 °C

Reflecting polyurethane sheeting

Polyimide sheet and strip

Poly[oxy(2,6-dibromo-1,4-phenylene)] for use in the manufacture of polyamide (a)

Poly(oxy-1,4-phenylenesulphonyl-1,4-phenyleneoxy-1,4-phenyleneisopropylidene-1,4-phenylene) in one of the forms mentioned in note 3 (b) to Chapter 39

Liquid poly(oxypropylene) with 3-(3-{2-[2-(2-mercaptoethoxy)ethoxy]ethylthio} propoxycarbonylamino)—p-tolylcarbamoyloxy as the end group

Poly[oxy-1,4-phenyleneisopropylidene-1,4-phenyleneoxy-(2-hydroxytrimethylene)], with an average molecular weight of not less than 26,000, in one of the forms mentioned in note 3 (b) to Chapter 39

Ion-exchange membranes in fluorinated plastic material, for use in chlor-alkali electrolytic cells

Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched, polyethylene fibrils, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent

Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched fibrils of a mixture of polyethylene and a polyethylene copolymer, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent

Polyethylene, in one of the forms mentioned in note 3 (b) to Chapter 39, having a density of not less than 0,958 g/cm³ at 23 °C and containing by weight not more than:

• 50 ppm of aluminium

• 2 ppm of calcium

• 2 ppm of chromium

• 2 ppm of iron

• 2 ppm of nickel

• 2 ppm of titanium

• 8 ppm of vanadium

for the manufacture of chlorosulphonated polyethylene

Polyethylene, in one of the forms mentioned in note 3 (b) to Chapter 39, having a density of not less than 0,945 and not more than 0,985 g/cm¹ for the manufacture of typewriter ribbon or similar ribbon

Microporous polytetrafluoroethylene film coated on one side with a polymer permeable to water vapour not less than 30 cm in width and weighing not more than 50 g/m²

Microporous polytetrafluoroethylene film of a width of not less than 30 cm and weighing not more than 22,4 g/m²

Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched polypropylene fibrils, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent

An A-B-A block copolymer of polystyrene, ethylene-butylene copolymer and polystyrene, containing not more than 25% by weight of styrene, in one of the forms mentioned in note 3 (b) to Chapter 39

Copolymers, solely of allyl alcohol with styrene, which have an acetyl value of not less than 175

Copolymers, entirely of maleic anhydride and styrene, whether or not containing a styrene-butadiene block co-polymer in one of the forms mentioned in note 3 (b) to Chapter 39

Plates, made of a copolymer consisting of maleic anhydride and styrene, also containing styrene-block copolymer, covered on both sides with a sheet of the abovementioned copolymer, modified with butadiene or pigmented

Polyvinyl chloride sheeting, of a thickness of less than 1 mm, coated with an adhesive in which are embedded hollow glass balls having a diameter of not more than 100 micrometres

Reflecting polyvinyl chloride sheeting, wholly embossed on one side in a regular pyramidal pattern

Copolymers of vinylidene chloride with vinyl chloride, containing not less than 79,5% by weight of vinylidene chloride, in one of the forms mentioned in note 3 (a) and (b) to Chapter 39, for the manufacture of fibres, monofil or strip (a)

Poly(vinyl formal), in one of the forms mentioned in note 3 (b) to Chapter 39, having a molecular weight of not less than 10,000 and not more than 40,000 and containing, by weight:

• not less than 9,5% and not more than 13% of the acetyl groups, expressed as vinyl acetate

• not less than 5% and not more than 6,5% of the hydroxy groups, expressed as vinyl alcohol

Films of a thickness of not more than 1 mm, entirely of polyvinyl-alcohol, containing not more than 2% by weight of unhydrolyzed acetate groups expressed as vinyl acetate and not less than 5% and not more than 15% by weight of glycerol as a plasticizer

Polyvinyl alcohol film coated on both sides having a total thickness of less than 1 mm and with an extension at break (longitudinal or transversal) of not less than 65%

Polyvinyl alcohol film containing not less than 99% by weight of polyvinyl alcohol, uncoated, with a thickness of not more than 1 mm

Polyvinyl alcohol film soluble in water at a temperature of 20 °C

Copolymers of 2-di-isopropylaminoethyl methacrylate and decyl methacrylate dissolved inN,N-dimethylacetamide, with a copolymer content of not less than 55% by weight

Copolymerization products of acrylic and methacrylic esters, in the form of film with a thickness not exceeding 150 micrometres

Copolymer of acrylic acid and 2-ethylhexyl acrylate, containing not less than 10% and not more than 11% by weight of 2-ethylhexyl acrylate

Poly[N-(3-hydroxyimino-1,1-dimethylbutyl)acrylamide]

Reflecting polyacrylic sheeting which microspheres are embedded

Copolymers of vinylidene chloride and acrylonitrile, in the form of expandable beads of a diameter not less than four micrometres and not more than 20 micrometres

Copolymers of vinyl chloride with vinyl acetate and vinyl alcohol, containing by weight not less than 89% and not more than 92% of vinyl chloride, not less than 2% and not more than 6% of vinyl acetate and not less than 4% and not more than 8% of vinyl alcohol, in one of the forms mentioned in note 3 (a) and (b) to Chapter 39

Poly(1-ethylethylene) (Polybutene-1) in one of the forms mentioned in note 3 (b) to Chapter 39

Alternating copolymer of ethylene and maleic anhydride, for use as a thickener in textile pigment printing pastes (a)

Copolymer of acrylonitrile and methylacrylate modified with polybutadienacrylonitrile (NBR)

Polyvinyl fluride in one of the forms mentioned in note 3 (b) to Chapter 39

Poly(tribromostyrene), containing not less than 66% and not more than 71% by weight of bromine, in one of the forms mentioned in note 3 (b) to Chapter 39

Synthetic paper pulp, in the form of moist sheets made from unconnected finely branched fibrils of polypropylene modified by an organic acid, whether or not blended with cellulose fibres in a quantity not exceeding 15%, containing polyvinyl alcohol dissolved in water as the moistening agent

Polymerization products of acrylic acid with small quantities of a polyunsaturated monomer for use as a thickener in textile pigment printing pastes or in the manufacture of products falling within heading No 30.03

Polymerization products of acrylic acid, with alkyl methacrylate and small quantitites of other monomers for use as thickeners in the manufacture of textile printing pastes

Copolymer of a poly(oxyalkylene) ester of a polycarboxylic acid andepsilon-caprolactam

Ionomer resin consisting of a salt of a copolymer of ethylene and methacrylic acid

Ionomer resin consisting of a salt of a terpolymer of ethylene, isobutyl acrylate, and methacrylic acid

Polymerization products of a (polybutadiene)polyol and two lactamsN,N'-linked by the bivalent acyl radical of a dicarboxylic acid

Copolymer of ethylene with chlorotrifluoroethylene, in one of the forms mentioned in note 3 (b) to Chapter 39

Terpolymer of ethylene with chlorotrifluoroethylene and hexafluoro(2-methylpropene) in one of the forms mentioned in note 3 (b) to Chapter 39

Poly[(R)—p-mentha-1,8-diene] in one of the forms mentioned in note 3 (b) to Chapter 39

Copolymer of tetrafluoroethylene and hexafluoropropene compounded with not less than 1% and not more than 51% by weight of one of the following:

• barium sulphate

• dibismuth trioxide

• dibismuth carbonate dioxide

• tungsten

in one of the forms mentioned in note 3 (b) to Chapter 39

Copolymers of ethylene with acrylic acid, or with methacrylic acid, containing not less than 3% and not more than 30% of acrylic acid or methacrylic acid by weight, in one of the forms mentioned in note 6 (b) to Chapter 39

Copolymer of vinyl alcohol with ethylene, in one of the forms mentioned in note 6 (b) to Chapter 39

Polyvinyl fluoride sheet

Reflecting sheeting of an acrylic polymer modified by melamine-formaldehyde

Polyvinylidene fluoride film

Copolymer of ethylene with propylene in the form of self-adhesive strip of a width of not less than 18 mm and not more than 27 mm or not less than 58 and not more than 90 cm and of a thickness not exceeding 1 mm; which, after being extended at 23 °C to twice their original length, returns to its original length, with a tolerance of not more than +15%, within a period of two minutes

Film of a thickness of not more than 1 mm of a copolymerization of vinyl alcohol with ethylene containing no other polymerization products or copolymerization products, with an extension at break (longitudinal or transversal) of not less than 65%

Sheet consisting of a copolymer of ethylene with chlorotrifluoroethylene, whether or not backed with a woven glass fibre fabric

Hydroxyalkylhydroxyethylcellulose

Alkylhydroxyethylcellulose

Hydroxypropylcellulose

0-(2-hydroxyethyl)amylopectin hydrolysate

Two polyethylene sheets containing multiple slits laid crosswise upon each other and bonded together

Reflecting sheeting or tape, consisting of a facing strip of polyvinyl chloride embossed in a regular pyramidal pattern, heat sealed in parallel lines or a grid pattern to a backing strip of plastic material, or of knitted or woven fabric covered on one side with plastic material

Strip, consisting of polybutadiene-acrylonitrile containing, in the mass, microspheres, laminated on the upper surface with a polyvinyl chloride sheet also containing microspheres

Leather of East India kip, whole, whether or not the heads and legs have been removed, each weighing more than 4,5 kg net and not more than 8 kg, not further prepared than vegetable tanned, whether or not having undergone further preservative treatment with oil, but obviously unsuitable for immediate use in the manufacture of leather articles

Used casks and barrels of oak, whether assembled or not; their staves and heads

Match splint, manufactured from aspen(Populus tremuloides), for the manufacture of matches not requiring a specific striking surface (so called “strike-anywhere” matches)

Shingles for roofs and walls, of coniferous wood

Bleached paper, impregnated with acrylic resin and coated with poly(vinylidene chloride), or coated with acrylic resin, having a thickness of not less than 200 micrometres and not more than 255 micrometres and a weight per square metre of not less than 165 grams and not more than 185 grams

Coloured paper, impregnated with acrylic resin and coated with poly(vinylidene chloride), or coated with acrylic resin, having a thickness of not less than 200 micrometres and not more than 255 micrometres and a weight per square metre of not less than 165 grams and not more than 185 grams

Strips of paper glued to one another to form a honeycomb with a maximum height of 12 cm, impregnated with a copper-based preservative

Artists' screen prints (commonly described as serigraphs), signed by the artist and numbered from 1 to 200

Microcopies on an opaque base for data banks and libraries

Yarn of polytetrafluoroethylene

Yarn of polyvinyl alcohol, soluble in water at a temperature of 50 °C, for use in the manufacture of weftless “felts” for papermaking machines

Yarn of a copolymer of glycolic acid and lactic acid for the manufacture of surgical sutures

Yarn wholly of polyglycollic acid

Yarn of poly(1,4-dioxanone)

Non-textured filament of poly(vinyl alcohol), for the manufacture of sleeves for printing rollers

Yarn of synthetic textile fibres exclusively or aromatic polyamides obtained by the polycondensation ofm-phenylenediamine and isophthalic acid

Polyamide yarn, not textured, untwisted or with not more than 22 turns per metre, of crimpable biocomponent filaments consisting of poly(hexamethylene adipamide) and a copolyamide for the manufacture of knee-length stockings falling within subheading 60.03 B I, women’s stockings falling with subheading 60.03 B II a) or panty hose (tights) falling within subheading 60.04 B III a) 1

Yarn, multiple, of polyamide, coated, impregnated or covered with a phenolic resin

Monofil of polytetrafluoroethylene

Monofil of poly(1,4-dioxanone)

Monofil of a copolymer of 1,3-dioxan-2-one with 1,4-dioxan-2,5-dione for the manufacture of surgical sutures

Polyimide strip

Strip of polytetrafluoroethylene, whether or not in rolls, with an extension at break not exceeding 25%

Woven fabrics of polyvinyl alcohol fibres, for machine embroidery

Woven poly(tetrafluoroethylene) fibre fabric coated on one side with a copolymer of tetrafluoroethylene and trifluoroethylene having perfluorinated alkoxy side chains ending in carboxylic acid or sulphonic acid groups in the potassium or sodium salt form, whether or not coated on the same side with a metallic inorganic compound

Textile fibres of polytetrafluoroethylene

Textile fibres exclusively of aromatic polyamides obtained by the polycondensation ofm-phenylenediamine and isophthalic acid, for uses other than the manufacture of articles falling within Chapters 60, 61, 64 and 65 or of materials used in the manufacture of such articles

Polyvinyl alcohol fibres, whether or not acetalized

Acetalized, multicomponent spun fibres with a matrix fibril structure, consisting of emulsion polymerized poly(vinyl alcohol) and vinyl chloride

Fibres wholly of poly(thio-1,4-phenylene)

Fibres entirely of Modal (ISO)

Braid, wholly of polyglycollic acid yarn

Braid of yarn of a copolymer of glycollic acid and lactic acid, whether or not coated, for the manufacture of surgical sutures

Bonded fibre fabrics and similar bonded yarn fabrics of aromatic polyamide man-made fibres obtained by polycondensation ofm-phenylenediamine and isophthalic acid, whether or not impregnated or coated, in the piece or cut into rectangles

Poly(vinyl alcohol) bonded fibre fabrics, with a thickness of not less than 200 micrometres and not more than 280 micrometres and of a weight of not less than 20 g/m² and not more than 50 g/m2, whether or not impregnated or coated, in the piece or cut into rectangles

Bonded fibre fabrics with a thickness of not more than 300 micrometres of spun-bonded polyethylene fibres, with a weight not exceeding 115 g/m², whether or not impregnated or coated, in the piece or cut into rectangles

Bonded fibre fabrics of polypropylene consisting of a meltblown central layer, laminated on each side with spun-bonded fibres, with a thickness of not more than 550 micrometres and a weight not exceeding 80 g/m², in the piece or simply cut into rectangular shape, not impregnated or coated

Spun-bonded fibre fabric of continuous polyester filaments bonded together with polyacrylates, pressed and embossed with a weave pattern, whether or not impregnated or coated, in the piece or cut into rectangles

Coir yarn, for the manufacture of carpets, carpeting and rugs, mats and the like

Knitted or woven fabric, coated or covered on one side with artificial plastic material in which are embedded microspheres

Textile fabrics coated with adhesive in which are embedded microspheres, the diameter of which is not more than 75 micrometres and weighing not more than 550 g/m²

Needle punched synthetic fibre felts on a woven synthetic fibre base coated or covered on one side with polytetrafluoroethylene film, for the manufacture of filtration products

Yarn of poly(p-phenylene terephthalamide), impregnated, oiled

Yarn and strip of impregnated polytetrafluroethylene, whether or not oiled or graphited

Microspheres containing more than 90% by weight of barium and titanium expressed as barium oxide and titanium dioxide with a diameter of less than 100 micrometres and refractive index of not less than 2,1 and not more than 2,4

Yarn continuous ceramic filaments, each filament of which contains not less than 12% by weight of diboron trioxide, not more than 26% by weight of silicon dioxide and not less than 60% by weight of dialuminium trioxide

Catalysts supports consisting of porous cordiertite or mullite ceramic pieces of roughly circular, square, rectangular or oval cross-section with paralllel sides having an overall volume of not less than 240 ml and not more than 11,100 ml, and having a minimum external rectilineal dimension of not less than 20 mm and maximum external rectolineal dimension of not more than 480 mm, having not less than one continuous channel per 100 mm2 running parallel to the main axis of symmetry, the total channel cross-section area being not less than 10% and not more than 80% of the whole cross-section area

Plates made of dialuminium trioxide and titanium carbide with dimensions of not more than 48×48 mm, for the manufacture of magnetic heads

Glass envelopes, for monochrome cathode-ray tubes, having a rectangular diagonal face of not less than 22 cm and not exceeding 51 cm, and nominal neck diameter of 20 mm, 29 mm or 37 mm

Non-textile glass fibres having a diameter of less than four micrometres

Webs, felts, thin sheets and similar products of non-textile glass fibres, of a weight per square metre of not more than 120 g and a fibre diameter, excluding any coating of not more than 7 micrometers, for the manufacture of filtration products

Yarns, spun from continuous glass filaments having a diameter of not less than 5,8 micrometres and not more than 7,1 micrometres of 33, 34 or 51 tex±7,5% or a multiple thereof

Yarns of 22 tex spun from continuous glass filaments having a diameter of not less than 4,7 and not more than 5,5 micrometres

Yarns of 33 tex or a multiple thereof obtained from continuous spun glass filaments having a diameter of not less than 2,5 micrometres and not more than 5,1 micrometres, other than those treated so as to improve their adhesion to elastomers

Yarns, spun from continuous glass filaments having a diameter of not less than 5,8 micrometres and not more than 6,5 micrometres of 33, 34 or 51 tex or a multiple thereof

Sheets and plates of polytetrafluoroethylene, with aluminium oxide or titanium dioxide as a filter or reinforced with glass-fibres fabric, laminated on both sides with copper foil

Tubes of nickel, not alloyed, of a purity not less than 99% by weight, not deviating from straightness lengthwise by more than 1 mm per 150 cm of lengths, and with an outside diameter either:

• not less than 231,36 mm and not more than 214 mm or

• not less than 209,95 mm and not more than 210,59 mm

or

• not less than 168,28 mm and not more than 168,78 mm

Aluminium alloy rectangular strip in coils, not lacquered, varnished, painted or plastic-coated, having a width of not less than 75 and not more than 230 mm and a thickness of not less than 2,9 and not more than 6,5 mm, containing by weight:

• not less than 18% and not more than 23% of tin

• not less than 0,7% and not more than 1,5% of copper

• other metals where present each having a concentration lower than that of the copper

Ground and polished magnesium sheets whose dimensions do not exceed 770×1020 mm, coated on one side with epoxy resin, insensitive to light

Wire of unalloyed tantalum, of a diameter not less than 0,2 mm and not more than 0,5 mm, for the manufacture of capacitors

Chromium, in the form of cathode chips, pellets or briquettes, which contains not more than 0,10% by weight of total oxygen, not more than 0,015% by weight of total aluminium and not more than 0,001% by weight of aluminium compounds insoluble in boiling 5N hydrochloric acid and in boiling fuming perchloric acid, and evaluated as aluminium, for the production of alloy for the manufacture of the following parts of gas turbines and jet engines (a):

• blades, fixed or movable, including their rings

• vanes

• nozzles

Electrolytic manganese of a purity of at least 99,7% by weight, for the chemical industry

Electrolytic manganese of a purity of at least 99,7% by weight, for the production of non-ferrous alloys

Waste and scrap titanium

Titanium sponge

Immersion tube (coils) bundles consisting of an assembly of plastic tubes terminating at each end in a honeycomb structure (end fitting) surrounded by a pipe connector

Components of separators for the separation of gases from gas mixtures, consisting of a bundle of permeable hollow fibres passing through a block of plastic material at one end and sealed at the other end—the whole being enclosed within a metal container, whether or not perforated, of an overall length of not less than 300 mm and not more than 3,700 mm and a diameter of not more than 350 mm

Parts of equipment for the filtration and purification of water, consisting of a bundle of hollow fibres of artificial plastic material with permeable walls, embedded in a block of artificial plastic material at one end and passing through a block of artificial plastic material at the other end, the whole being enclosed in an artificial plastic cylinder

Apparatus for catalytic conversion of nitrogen oxides into nitrogen and water, consisting of shaped and fired units in honeycomb structure of a mixture of vanadium oxides or vanadium sulphates and titanium dioxide or barian sulphate in a metallic basket not exceeding 120×120×160 cm

Parts of equipment for the purification of water by reverse osmosis, consisting essentially of plastic-based membranes, supported internally by textile materials which are wound round a perforated tube of plastic material and housed in a plastic cylinder

Parts of apparatus for catalytic conversion of nitrogen oxides into nitrogen and water, consisting of shaped and fired units in honeycomb structure of a mixture of vanadium oxides or vanadium sulphates and titanium dioxide or barium sulphate or of vanadium oxide, tungsten (wolfram) oxide and titanium dioixide, contained in a metal basket

Suction roll shells, not drilled, being alloy steel tubes with a length of not less than 5,207 mm and an outside diameter of not less than 754 mm, for use in machinery for making paper or paperboard

Typewriters with Braille characters

Electronic pocket communicators for handicapped persons which, by means of push buttons and printing thermic head, print and issue text on tape

Assemblies for automatic data-processing machines, comprising UV-erasable, programmable, read-only memories (EPROMs), with a storage capacity of 256 K bits, consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:

• two UV-erasable, programmable, read-only memories (EPROMs), in the form of monolithic integrated circuits, each with a storage capacity of 128 K bits and a quartz window on the upper surface

• a decoder in the form of a monolithic integrated circuit

• a decoupling capacitor

• two resistances

The assemblies bear:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDG 7832 MM-30

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines, comprising UV-erasable, programmable, read-only memories (EPROMs), with a storage capacity of 256 K bits, consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:

• four UV-erasable, programmable, read-only memories (EPROMs), in the form of monolithic integrated circuits, each with a storage capacity of 64 K bits and a quartz window on the upper surface

• one decoder in the form of a monolithic integrated circuit

• one decoupling capacitor

The assemblies bear:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 7832 MC-35

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines, comprising static random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 32 K bits consisting of a multilayer substrate, the exterior of which do not exceed 17×39 mm, with not more than 28 connecting pins, on which are mounted:

• two static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits each with a storage capacity of 16 K bits

• a decoder in the form of a monolithic integrated circuit

• a decoupling capacitor

The assemblies bear:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 8804 C-20

  • EDH 8804 CL-20

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines, comprising static random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 64 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:

• four static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits each with a storage capacity of 16 K bits

• a decoder in the form of a monolithic integrated circuit

• a decoupling capacitor

The assemblies have not more than 28 connecting pins and bear:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 8808 B-20

  • EDH 8808 C-10

  • EDH 8808 C-12

  • EDH 8808 C-15

  • EDH 8808 C-20

  • EDH 8808 CL-15

  • EDH 8808 CL-20

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines comprising a UV-erasable, programmable, read-only memory (EPROM) with a storage capacity of 64 K bits and a static random-access memory of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 32 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, on which are mounted:

• one UV-erasable, programmable, read-only memory (EPROM) in the form of a monolithic integrated circuit, with a storage capacity of 64 K bits and with a quartz window on the upper surface

• two static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits, each with a storage capacity of 16 K bits

• one decoder in the form of a monolithic integrated circuit

• one decoupling capacitor

• two resistances

The assemblies bear:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 90804 BS-25 (15)

  • EDH 90804 BS-30 (20)

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines comprising UV-erasable, programmable, read-only memories (EPROMs) with a storage capacity of 128 K bits and static random-access memories of C-MOS technology (C-MS S-RAMs) with a storage capacity of 128 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, on which are mounted:

• two UV-erasable programmable, read-only memories (EPROMSs) in the form of monolithic integrated circuits, each with a storage capacity of 64 K bits and a quartz window on the upper surface

• two static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits, each with a storage capacity of 64 K bits

• one decoder in the form of a monolithic integrated circuit

• one decoupling capacitor

• two resistance

The assemblies bear:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 91616 CL-30 (20)

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines, comprising UV-erasable, programmable, read-only memories (EPROMs) with a storage capacity of 64 K bits and static random-access memory in C-MOS technology (C-MOS S-RAM) with a storage capacity of 48 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm with 28 connecting pins on which are mounted:

• a UV-erasable, programmable, read-only memory (EPROM) in the form of a monolithic integrated circuit with a storage capacity of 64 K bits and a quartz window on the upper surface.

• three static random-access memories in C-MOS technology (C-MOS S-RAM) in the form of monolithic integrated circuits each with a storage capacity of 16 K bits

• a decoder in the form of a monolithic integrated circuit

• a decoupling capacitor

• two resistances

The assemblies bear:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 90806 BS-25(15)

  • EDH 90806 BS-30(20)

  or

• other identification markings relating to assemblies complying with the above description

Dot matrix displays, whose external dimensions do not exceed 14×40×210 mm excluding cables and connectors, consisting of two glass layers or sheets in which are arranged crystal displays with 2,560 dots (arranged in 16 lines and 160 columns) or 2,400 dots (arranged in 16 lines and 150 columns) mounted on a printed circuit board comprising electronic components providing drive and control functions, with or without 10 or 20-core flat cable connector

Assemblies for automatic data-processing machines, comprising state random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 256 K bits, consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×38 mm, on which are mounted:

• four static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits with a capacity of 64 K bits, each contained in a ceramic housing,

• a decoder in the form of a monolithic integrated circuit,

• a decoupling capacitor.

The assemblies have not more than 28 connecting pins and bear:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 8832 MC 20

  or

• other identification markings relating to assemblies complying with the abovementioned description

Winchester or thin film technology magnetic heads for disc file peripherals, as well as carrying arms equipped with such magnetic heads, capable of recording to a density of not less than 10 tracks per millimetre

Dot matrix displays, whose external dimensions do not exceed 15×90×280 mm excluding cables and connectors consisting of a layer of liquid crystals between two sheets or plates with 30,720 dots (arranged in 64 lines and 480 columns), mounted on a printed-circuit board comprising electronic components providing drive functions, with or without cable and connector

Dot matrix displays consisting of a layer of liquid crystal between two glass sheets or plates with a maximum of 15,360 dots (arranged in 64 lines and 240 columns), complete with an interface electronics board in C-MOS technology whose exterior dimensions do not exceed 181×76×15 mm, with not more than 544 connecting areas

Magnetic read/write elements in thin film technology for the manufacture of magnetic heads for disc file peripherals, capable of recording to a density of not less than 10 tracks per mm, in the form of sheets measuring not more than 48×48 mm and containing not less than 200 elements or in the form of strips measuring not more than 4×48 mm and containing not less than 10 elements

Assemblies for automatic data-processing machines, consisting of two stacked substrate layers each with two static random-access memories of N-MOS (including H-MOS) technology (N-MOS-S-RAMs), in the form of monolithic integrated circuits each with a storage capacity of 2 K bits and with a total storage capacity of either 8 K×1 bit, or 4 K×2 bits, contained in a housing, the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 4598601

  • 5121850

  • 5121934

  • 5121935

  • 5122148

  • 5123059

  • 5123120

  • 5123128

  • 5123129

  • 5123337

  • 5123339

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines, consisting of two stacked substrate layers each with two quasi-static random-access memories of N-MOS (including H-MOS) technology, other than dynamic (N-MOS (quasi-static RAMs) in the form of monolithic integrated circuits each with a storage capacity of 4 K bits and with a total storage capacity of either 16 K×1 bit or 8 K×2 bits, contained in a housing the exterior of which do not exceed 13×13 mm, with not more than 24 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 4599766

  • 4599767

  • 4599768

  • 4599769

  • 4599770

  • 4599771

  • 4599772

  • 4599773

  • 4599774

  • 4599893

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines, consisting of two stacked substrate layers with one or two static random access memories of bipolar technology (bipolar S-RAMs) in the form of monolithic integrated circuits, each with a storage capacity of 1 K bits and with a maximum storage capacity of 4 K bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:

• an identification marking, either consisting of or including one of the following combinations of figures:

  • 770965

  • 4599497

  • 7379442

  or

• other identification markings relating to assemblies complying with the abovementioned description

Assemblies for automatic data-processing machines comprising static random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 256 K bits consisting of a multilayer substrate, the exterior dimensions of which do not exceed 17×39 mm, on which are mounted:

• four static random-access memories of C-MOS technology (C-MOS S-RAMs) in the form of monolithic integrated circuits each with a capacity of 64 K bits

• a decoder in the form of a monolithic integrated circuit

• a decoupling capacitor

The assemblies have not more than 28 connecting pins and bear:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 8832 MC-20

  or

• other identification markings relating to assemblies complying with the abovementioned description

Magnetic bubble memories with a storage capacity of not more than 4 megabits contained in a housing the exterior dimensions of which do not exceed 43×44 mm, with not more than 42 connecting pins or contact areas and bearing:

• an identification marking consisting of or including one of the following combinations of figures or figures and letters:

  • BDL 0133

  • MBM 2011

  • FBM 64 DA

  • BDL 0134

  • MBM 2256

  • 7110

  • BDN 0151

  • FBM 54 DB

  • 7114-1

  or

• other identification markings relating to magnetic bubble complying with the abovementioned description

Component forming the arithmetic/logic element of a central processing unit, comprising not more than nine printed circuit boards, the dimensions of which do not exceed 290×310 mm on each of which are mounted not more than 121 ECL gate arrays or ECL random access memories (ECL-RAMs) and combinations thereof contained in a framework the dimensions of which do not exceed 611×501×596 mm which serves as a housing and interconnector for the printed circuit boards, which bear:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • CO1B 2675 E 500

  • CO1B 2675 H 500

  • CO1B 2675 H 501

  • CO1B 2675 H 502

  • CO1B 2675 H 503

  • CO1B 2675 H 504

  or

• other identifications markings relating to components complying with the abovementioned description

Display unit with maximum dimensions, excluding cables and connectors, of 15×115×290 mm, comprising two layers of sheets of glass enclosing 128,000 liquid-crystal dots arranged in 200 rows and 640 columns, fixed to a printed circuit fitted with electronic components peforming control functions, with or without cables and connectors

Integrally forged, rough-turned components, with unit weights of more than 150 tonnes, for reactor pressure vessels

Hydraulic five-stage valve, with two magnetic valves for servo-control, consisting essentially of three plastic sections, for incorporation in water softening devices with automatic regeneration (throughflow and counterflow) with a maximum capacity of 650 L ion exchange volume

Integrally forged and roughly shaped generator and turbine shafts of a weight exceeding 215 tonnes

DC electric motor, brushless, with a maximum torque of 0,20 N/m, with an incorporated electronic control plate, outside rotor with circular cross-section and maximum diameter of 95 mm, aluminium precision-made hub with inside diameter of 28,6 mm, speed of 300 or 360 rpm, supply voltage of 12 volts±10%

DC electric motor, brushless, with a maximum torque of 0,20 N/m, with outside rotor of a maximum diameter of 55 mm, coupling flange of a diameter of 77 mm and precision-made chuck of a diameter of 44 mm, four-phase winding rated speed of 3,600 rpm, supply voltage 12 volts±10% and fitted with wires and connectors

Two or three-phase DC electric motor, brushless, with a maximum torque of 0,20 N/m, with an internal rotor of 62 mm maximum diameter and incorporating an electronic control panel, maximum dimensions 85×85×20 mm, including the shaft, nominal operating voltage of 12 volts±10% and a rate of rotation of 300 rpm

Bipolar stepping motors with an angle of step of 1,8 degrees 200 steps per revolution, 2-phase rotation sequence with bipolar-type windings, maximum external dimensions of 39×39×20 or 25 mm excluding shaft, fixing screws and boss, with a minimum torque of 0,25 N/m for the version with a maximum height of 20 mm and 0,35 N/m for the version with a maximum height of 25 mm

Hybrid stepping motor, with an angle of step of 0,9°, 400 steps per revolution, 4-phase rotation sequence with bipolar-type winding, consisting of a rotor, of a laminated stator held between two square flanges, not more than 40 mm wide, fitted with biterminate shaft, wires and connectors

Hybrid stepping motor with an angle of step of 0,9°, 400 steps per revolution, 2-phase rotation sequence and bipolar windings, comprising a rotor and a stator encapsulated in a cylindrical housing with a maximum diameter of 47 mm and maximum thickness of 14 mm, fitted with a single shaft output and cables with connectors

Hybrid stepping motor with an angle of step of 0,9°, 400 steps per revolution and 2-phase rotation sequence, and bipolar windings, comprising a rotor, a laminated stator enclosed between two square section flanges with sides not exceeding 40 mm, an integral two or three-phase tachometer enclosed in a cap with a maximum diameter of 35 mm, and separate cables and connectors for the motor and tachometer outputs, with maximum dimensions of 40×40×62 mm, including the shaft

Lithium iodine single cell battery with dimensions of 45×9×23 mm and a voltage not exceeding 2,8

Dry zinc/carbon batteries of a voltage of not less than 5,5 and not more than 6,5 and of a size not exceeding 110×90×5 mm, for incorporation in film cassettes for instant pictures

Opto-electronic receiving device (PINFET receiver) with a wavelength range 1,300—1,600 nanometres, and a speed of not less than 165 megabits per second, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25 mm×13 mm×13 mm, with not more than 16 connecting pins, with an attached optical fibre lead (pig-tail), and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • 416/7/9/7013

  • QDFI-XXXX-001

  or

• other identification markings relating to devices complying with the abovementioned description

Adjustable capacitor, in the form of a circular plate fitted with a screw head in its centre and two connecting tags, of a thickness not exceeding 3 mm and a capacity of from 5 to 30 picofarads, for the manufacture of products falling within Chapter 91

Thermal relays contained in a hermetically sealed glass cartridge not exceeding 35 mm in length excluding wires, with a maximum leakage rate of 10-⁶cm³ He/sec at 1 bar in the temperature range 0 to 160°C, to be incorporated into compressors for refrigerating equipment

Reed switches in the form of a glass capsule containing not more than three electrical contacts on metal arms and a small quantity of mercury

Single-face printed circuit, of dimensions not exceeding 30×30 mm, for the manufacture of products falling within Chapter 91

Cathode-ray tubes with dot mask (so-called dot-mask technology), with electron guns arranged in triangular fashion (so-called delta technology), with a distance between the coloured dots of 0,31 mm, with devices for automatic convergence

Cathode-ray tubes with a memory (direct view storage tubes) for the reproduction of alphanumeric and analogue data, equipped with a scanning device, for reading the images

Colour cathode-ray tubes, using shadow mask, in-line technology in which images are displayed on a screen with a usable surface not exceeding 165×165 mm for use in electronic flight instrument, warning and systems displays

Colour cathode-ray tubes with a dot mask equipped with electron guns placed side by side (in-line technology) with a distance of less than 0,4 mm between colour dots and with at least one of the following characteristics:

• a diagonal screen measurement of at least 48 cm, a diagonal angle of deflection of at most 90° and convergence errors of not more than 0,8 mm maximum in the corners

• equipped with an inseparable cladding on the tubes for absorbing vibrations (petting system)

• without internal magnetic screen

• equipped with a phosphor layer calibrated with the following co-ordinates for the colour dots: red: X=0,64 and Y=0,33 or X=0,64 and =0,34: green: X=0,29 and Y=0,60 or X=0,31 and Y=0,595; blue: X=0,15 and Y=0,06 or X=0,155 and Y=0,07

Colour cathode ray tubes with a dot mask equipped with electron guns in a triangular fashion (delta technology) with a distance of less than 0,4 mm between colour dots, with at least one of the following characteristics:

• a diagonal screen measurement of at least 66 cm

• equipped with a phosphor layer calibrated with the following co-ordinates for the colour dots; red: X=0,64 and Y=0,33 or X=0,64 and Y=0,34; green: X=0,29 and Y=0,60 or X=0,31 and Y=0,595; blue: X=0,15 and Y=0,06 or X=0,155 and Y=0,07

Displays in the form of a tube consisting of a glass housing mounted on a board the dimensions of which do not exceed 350×300 mm excluding leads. The tube contains one or more rows of characters or lines arranged in rows, each character or line consisting of fluorescent or phosphorescent elements. These elements are mounted on metallized base which is covered with fluorescent substances or phosphorescent salts which give off light when bombarded with electrons

Quartz crystal oscillating at a frequency of 4,194,304 Hz, contained in a housing, for the manufacture of products falling within Chapter 91

Quartz crystal oscillating at a frequency of 32,768 Hz, contained in a cylindrical housing of a length not exceeding 8,2 mm and a diameter not exceeding 3,2 mm, for the manufacture of products falling within Chapter 91

Digital displays of a size not exceeding 25×35 mm, consisting of a printed circuit board on which are mounted, under a plastic cover, up to 22 light-emitting diodes manufactured from gallium-based semi-conductor compounds. Each display consists of a single character with or without a plus or minus sign and/or one or two dots

Digital displays, consisting of a printed circuit board of a size not exceeding 35×90 mm with a single line of characters, not less than two in number, comprising light-emitting diodes made from gallium-based semi-conductor compounds mounted thereon. Each character is composed of up to eight segments with or without a decimal point and the line of characters has a protective cover of plastic

Read-only memory in C-MOS technology (C-MOS ROM) with a storage capacity of 256 K bits and a standby current of not more than 0.03 mA, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×50 mm, with not more than 54 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • HN 61256

  • HN 613256

  • MB 83256

  or

• other identification markings relating to C-MOS ROMs complying with the abovementioned description

Read-only memory of C-MOS technology (C-MOS ROM) with a storage capacity of 1 megabit in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • HN 62301 P,

  • MB 831124,

  • TC 531000 P

  or

• other identification markings relating to C-MOS ROMs complying with the abovementioned description

UV-erasable, programmable, read-only memories (EP-ROMs) with a storage capacity of 2 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with a quartz window on the upper surface and bearing:

• an identification marking either consisting of one of the following combinations of figures or including one of following combinations:

  • AMI 702 ADC

  • 82140 PP

  or

• other identification markings relating to EPROMs complying with the abovementioned description

UV-erasable, programmable, read-only memories (EP-ROMs) with a storage capacity of 256 K bits, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 17×39 mm, with a quartz window on the upper surface and bearing:

• an identification marking either consisting of or including the following combination of figures or figures and letters:

  • D 27256

  • 27256

  • TM 27256 JL

  • 27 C 256

  or

• other identification markings relating to EPROMs complying with the abovementioned description

Memories in the form of a monolithic integrated circuit consisting of a multi-layer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor two resistances and one UV-erasable, programmable read-only memory (EPROM) having a storage capacity of 64 K bits and a quartz window on the upper surface and three static random-access memories in C-MOS technology (C-MOS S-RAM's) each having a storage capacity of 16 K bits and a total capacity of 48 K bits with not more than 28 connecting pins. The assemblies bear:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 90 806 BS-25 (15)

  • EDH 90 806 BS-30 (20)

  or

• other identification markings relating to memories complying with the above description

UV-erasable, programmable, read-only memories (EP-ROMs), in the form of monolithic integrated circuits, consisting of a multilayer substrate whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor, two resistances and two EPROMs each having a storage capacity of 128 K bits and with a total storage capacity of 256 K bits, with two quartz windows on the upper surface and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 7832 MM-30

  or

• other identification markings relating to EPROMs complying with the abovementioned description

Memories in the form of monolithic integrated circuits, consisting of a multilayer substrate whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and four UV-erasable, programmable, read-only memories (EPROMs) each having a storage capacity of 64 K bits and with a total EPROM capacity of 256 K bits, with a quartz window on the upper surface and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 7832 MC-35

• other identification markings relating to EPROMs complying with the abovementioned description

Static, random-access memories of C-MOS technology (C-MOS S-RAMs), in the form of monolithic integrated circuit consisting of a multilayer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and two chips each having a storage capacity of 16 K bits and with a total storage capacity of 32 K bits, with not more than 28 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 8804 C-20

  • EDH 8804 CL-20

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Static, random-access memories of C-MOS technology (C-MOS S-RAMs), in the form of a monolithic integrated circuit consisting of a multilayer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and four chips each having a storage capacity of 16 K bits and with a total storage capacity of 64 K bits, with not more than 28 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • EDH 8808 B-20

  • EDH 8808 C-10

  • EDH 8808 C-12

  • EDH 8808 C-15

  • EDH 8808 C-20

  • EDH 8808 CL-15

  • EDH 8808 CL-20

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Static, random-access memories of C-MOS technology (C-MOS S-RAMs), in the form of a monolithic integrated circuit consisting of a multilayer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor and four chips each having a storage capacity of 64 K bits and with a total storage capacity of 256 K bits, with not more than 28 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 8832 MC-20

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Memories, in the form of monolithic integrated circuits consisting of a multi-layer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor, two resistances and one UV-erasable, programmable, read-only memory (EPROM) having a storage capacity of 64 K bits, two static random-access memories of C-MOS technology (C-MOS S-RAMs) each having a storage capacity of 16 K bits and which a total S-RAM storage capacity of 32 K bits, with not more than 28 connecting pins, with a quartz window on the upper surface and bearing:

• an identification marking either consisting of or including the following combinations of figures and letters:

  • EDH 90804 BS-25 (15)

  • EDH 90804 BS-30 (20)

  or

• other identification markings relating to memories complying with the abovementioned description

Memories, in the form of monolithic integrated circuits consisting of a multi-layer substrate, whose exterior dimensions do not exceed 17×39 mm, on which are mounted a decoder, a decoupling capacitor, two resistances and two UV-erasable, programmable, read-only memories (EP-ROMs), each having a storage capacity of 64 K bits and with a total EPROM capacity of 128 K bits, two static random-access memories of C-MOS technology (C-MOS S-RAMs) each having a storage capacity of 64 K bits and with a total S-RAM storage capacity of 128 K bits, with not more than 28 connecting pins, with two quartz windows on the upper surface and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • EDH 91616 CL-30 (20)

  or

• other identification markings relating to memories complying with the abovementioned description

Direct-access memory controllers of N-MOS technology (N-MOS DMA controller), in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 23×82 mm, with not more than 64 connecting pins, and bearing:

• an identification marking either consisting of one of the following combinations of figures or figures and letters or including one of those combinations:

  • HD 6844

  • 8237

  • MCM 68440

  • HD 68 A 44

  • 8257

  • MCM 68450

  • HD 68 B 44

  • HD 68450-4

  • AM 9517 A

  • HD 68450-6

  • HD 68450-8

  • CO 21698

  or

• other identification markings relating to N-MOS DMA controllers complying with the abovementioned description

Graphic display controller (GDC) with the capacity for controlling a 256 K word 16 bit memory, in the form of a monolithic integrated circuit, contained in a housing whose exterior dimensions do not exceed 15×52 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • PD 7220

  or

• other identification markings relating to GDCs complying with the abovementioned description

Non-volatile memory in the form of a monolithic integrated circuit, consisting of a C-MOS S-RAM, with a capacity of 16 K bits and internal power supply, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 28 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • MK 48 Z 02 (B)

  or

• other identification markings relating to non-volatile memories complying with the abovementioned description

Monolithic integrated circuits, consisting of eight independent elements capable of controlling the eight segments and/or characters of fluorescent or gas discharge displays, contained in a housing the exterior dimensions of which do not exceed 7×23 mm, with not more than 18 connecting pins and bearings:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 513

  • 514

  • 534

  • 594

  • 6118

  • 6128

  • 6138

  or

• other identification markings relating to circuits complying with the abovementioned description

Read-only memories (ROMs), in the form of a monolithic integrated circuit, with a storage capacity of 16 K×8 bits, with read-register and serial output control, contained in a housing the exterior dimensions of which do not exceed 50×16 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of one of the following combinations of figures or including one of those combinations:

  • from 62000 to 62999

  or

• other identification markings relating to ROMs complying with the abovementioned description

Programmable, non-erasable read-only memories (PROMs) with a storage capacity of 4 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins or 28 contact areas and bearing:

• an identification marking either consisting of or including one of the following combinations of figures or figures and letters:

  • 18 S 42

  • 29620

  • 54 S 472

  • 74 S 472

  • 18 S 46

  • 29621

  • 54 S 473

  • 74 S 473

  • 18 SA 42

  • 29622

  • 54 S 474

  • 74 S 474

  • 18 SA 46

  • 29623

  • 54 S 475

  • 74 S 475

  • 29624

  • 54 S 476

  • 74 S 476

  • 24 S 41

  • 29625

  • 54 S 477

  • 74 S 477

  • 24 SA 41

  • 29626

  • 54 S 572

  • 74 S 572

  • 29627

  • 54 S 573

  • 74 S 573

  • 27 S 15

  • 54740

  • 27 S 25

  • 3604

  • 54741

  • 7640

  • 27 S 26

  • 3624

  • 7641

  • 27 S 27

  • 3625

  • 5605

  • 7642

  • 27 S 28

  • 5625

  • 7643

  • 27 S 29

  • 38510

  • 7644

  • 27 S 30

  • 6340

  • 7645

  • 27 S 31

  • 5340

  • 6341

  • 7646

  • 27 S 32

  • 5341

  • 63 S 440

  • 7647

  • 27 S 33

  • 53 S 440

  • 63 RA 441

  • 7648

  • 53 RA 441

  • 63 RS 441

  • 7649

  • 28 L 42

  • 53 RS 441

  • 63 S 441

  • 28 L 45

  • 53 S 441

  • 6348

  • 82 HS 137

  • 28 L 46

  • 5348

  • 6349

  • 82 HS 147

  • 28 P 42

  • 5349

  • 6350

  • 82 S 115

  • 28 P 45

  • 5350

  • 6351

  • 82 S 136

  • 28 R 45

  • 5351

  • 6352

  • 82 S 137

  • 28 S 4 XFD

  • 5352

  • 6353

  • 82 S 140

  • 28 SA 41

  • 5353

  • 82 S 141

  • 28 S 42

  • HM 6641

  • 82 S 142

  • 28 SA 42

  • 82 S 146

  • 28 S 45

  • 7054

  • 82 S 147

  • 28 S 46

  • 7059

  • 28 SA 46

  • 93438

  • 7121

  • 93448

  • 7122

  • 93452

  • 7123

  • 93453

  • 7124

  • 7125

  • 7126

  • 7226

  or

• other identification markings relating to PROMs complying with the abovementioned description

Programmable, non-erasable read-only memories (PROMs) with a storage capacity of 8 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and 28 contact points and bearing:

• an identification marking either consisting of one of the following combinations of figures and letters or including one of those combinations:

  • 24 S 81

  • 3628

  • 74 LS 478

  • 82707

  • 24 SA 81

  • 74 S 2708

  • 82708

  • 24 S 86

  • 5380

  • 74 S 454

  • 82 HS 185

  • 5381

  • 74 S 455

  • 82 LS 180

  • 27 S 180

  • 5388

  • 74 S 478

  • 82 LS 181

  • 27 S 181

  • 5389

  • 74 S 479

  • 82 S 180

  • 27 S 185

  • 53 S 840

  • 82 S 181

  • 27 S 35

  • 53 S 841

  • 7608

  • 82 S 182

  • 7680

  • 82 S 183

  • 28 L 85

  • 54 LS 478

  • 7681

  • 82 S 184

  • 28 L 86

  • 54 S 2708

  • 7684

  • 82 S 185

  • 28 P 85

  • 54 S 454

  • 7685

  • 82 S 2708

  • 28 R 35

  • 54 S 455

  • 7686

  • 28 R 85

  • 54 S 478

  • 7687

  • 87 S 180

  • 28 S 2708

  • 54 S 479

  • 7688

  • 87 S 181

  • 28 S 85

  • 7689

  • 87 S 184

  • 28 S 86

  • 6380

  • 87 S 185

  • 28 SA 86

  • 6381

  • 77 S 180

  • 87 S 186

  • 28 S 8 XMFE

  • 6388

  • 77 S 181

  • 87 S 187

  • 6389

  • 77 S 184

  • 29623

  • 63 S 840

  • 77 S 185

  • 93450

  • 29630

  • 63 S 841

  • 77 S 186

  • 93451

  • 29631

  • 77 S 187

  • 93460

  • 29632

  • 7050

  • 93461

  • 29633

  • 7055

  • TBPS 81 M

  • 93465

  • 29634

  • 7060

  • 93466

  • 29635

  • 93 L 450

  • 29636

  • 7127

  • 93 L 451

  • 29637

  • 7128

  • 29650

  • 7129

  • 9460

  • 29651

  • 7130

  • 29652

  • 7131

  • 29653

  • 7132

  • 7232

  or

• other identification markings relating to PROMs complying with the abovementioned description

UV-erasable, programmable, read-only memory (EPROM) equipped with a programmable input/output system, with a storage capacity of 2 K×8 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×52 mm, with a quartz window on the upper face and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • D 8755 A

  • TMP 8755 AC

  or

• other identification markings relating to memories complying with the abovementioned description

Electrically erasable, programmable, read-only memories (E²PROMs) with a storage capacity of 256 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×12 mm, with not more than eight connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • NMC 9306

  or

• other identification markings relating to E²PROMs complying with the abovementioned description

Electrically erasable programmable, read-only memories (E²PROMs) with a storage capacity of 4 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • X 2804 A

  • X 2404

  • X 24 C 04

  or

• other identification markings relating to E²PROMs complying with the abovementioned description

Electrically erasable, programmable, read-only memories (E²PROMs) with a storage capacity of 16 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combination of figures and letters:

  • X 24 C 16

  • X 2816 A

  • 52 B 13

  • 52 B 13 H

  or

• other identification markings relating to E²PROMs complying with the abovementioned description

Electrically erasable, programming, read-only memories (E²PROMs) with a storage capacity of 64 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including one of the following combination of figures and letters:

  • X 2864 A

  • MCM 2864

  • 52 B 33

  • 52 B 33 H

  or

• other identification markings relating to E²PROMs complying with the abovementioned description

Electrically erasable, programmable, read-only memories (E²PROMs) with a storage capacity of 128 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • X 28128 A

  or

• other identification markings relating to E²PROMs complying with the abovementioned description

Electrically erasable, programmable, read-only memories (E²PROMs) with a storage capacity of 256 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • X 28256 A

  or

• other identification markings relating to E²PROMs complying with the abovementioned description

Static, random-access memories of TTL techology (TTLS-RAMs) with a storage capacity of 1 K bit, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×30 mm, with not more than 22 connecting pins and bearing:

• an identification marking either consisting of or in cluding one of the following combinations of figures and letters:

  • 2205

  • 74 LS 214

  • 93412

  • 74 LS 215

  • 93 L 412

  • 2510

  • 74 LS 314

  • 93415

  • 2511

  • 74 LS 315

  • 93 L 415

  • 74 S 207

  • 93422

  • 74 S 208

  • 93 L 422

  • 74 S 214

  • 93425

  • 74 S 314

  • 93 F 425

  • 93 L 425

  or

• other identification markings relating to TTL S-RAMs complying with the abovementioned description

Static, random-access memories of C-MOS technology (C-MOS S-RAMs), with a storage capacity of 4 K×1 bit, a maximum access time not exceeding 70 ns and a standby mode supply current of less than 1 mA, in the form of a monolithic integrated circuit, contained in a housing the dimensions of which do not exceed 9×26 mm, with 18 connecting pins, and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • 6147

  • MCM 61 L 47

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Static, random-access memory of C-MOS technology (C-MOS S-RAM) with a storage capacity of 2 K×8 bits and with a maximum standby power of 0,025 milliwatts at 25°C in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×33 mm with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combination of figures and letters:

  • TC 5516 A

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Static, random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs) with a storage capacity of 8 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures or figures and letters.

  • 4008

  • 8104

  • 8108

  • 4118

  • 8112

  • 8114

  • PD 421

  • 8185

  • 4801

  or

• other identification relating to N-MOS S-RAMs complying with the abovementioned description

Static, random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs), in the form of a monolithic integrated circuit consisting of two stacked substrate layers each with two chips, each having a storage capacity of 2 K bits and with a total storage capacity of 8 K×1 bit or 4 K×2 bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 4598601

  • 5121850

  • 5121934

  • 5121935

  • 5122148

  • 5123059

  • 5123120

  • 5123128

  • 5123129

  • 5123337

  • 5123339

  or

• other identification markings relating to N-MOS S-RAMs complying with the abovementioned description

Static, random-access memories of N-MOS (including H-MOS) technology (N-MOS S-RAMs) with a storage capacity of 256×4 bits, in te form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures or figures and letters:

  • M 120

  • 8101

  • 8111

  • 2101

  • 21 H 01

  • 9101

  • 2102

  • 91 L 01

  • 2111

  • 9111

  • 21 H 11

  • 91 L 11

  • 2112

  • 9112

  • 21 H 12

  • 91 L 12

  • 9122

  • 91 L 22

  or

• other identification markings relating to N-MOS S-RAMs complying with the abovementioned description

Static, random-access memories of C-MOS technology (C-MOS S-RAMs) with a storage capacity of 64 K bits in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of the following combination of figures and letters or including one of those combinations:

  • TC 5564

  • MB 8464

  • TC 5565 C

  • MCM 6164

  • HM 6264 P-12

  • HM 6264 P-15

  • 6264 LFP-15

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 256 bits superimposed bit-for-bit on a programmable, electrically erasable, read-only memory (E²PROM), contained in a housing the exterior dimensions of which do not exceed 8×24 mm, with not more than 18 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • X 2210

  • X 2443

  • X 2444

  or

• other identification markings relating to S-RAMs super-imposed of E²PROMs complying with the abovementioned description

Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 1 K bit, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E²PROM), contained in a housing the exterior dimensions of which do not exceed 17×33 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • X 2001

  • X 2201 A

  • X 2212

  or

• other identification markings relating to S-RAMs stracked on E²PROMs complying with the abovementioned description

Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 2 K bit, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E²PROM), contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of the following combination of figures and letter: X 2002

  or

• other identification markings relating to S-RAMs stacked on E²PROMs complying with the abovementioned description

Monolithic integrated circuit consisting of a static, random-access memory (S-RAM) with a storage capacity of 4 K bits, superimposed bit-for-bit on an electrically erasable, programmable, read-only memory (E²PROM), contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of the following combination of figures and letters:

  • X 2004

  or

• other identification markings relating to SRAMs stacked on E²PROMs complying with the abovementioned description

"Quasi-static' random-access memories of N-MOS (including H-MOS) technology (N-MOS quasi-static RAMs), in the form of a monolithic integrated circuit consisting of two stacked substrate layers, each with two chips, each having a storage capacity of 4 K bits and with a total storage capacity of 16 K×1 bit or 8 K×2 bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 24 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 4599766

  • 4599769

  • 4599772

  • 4599893

  • 4599767

  • 4599770

  • 4599773

  • 4599768

  • 4599771

  • 4599774

  or

• other identification markings relating to N-MOS quasi-static RAMs complying with the abovementioned description

Random-access memories of ECL technology (ECL-RAMs) with a storage capacity of 1 K×4 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×10 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including the following combinations of figures or figures and letters:

  • PB 10474

  • 100474

  or

• other identification markings relating to ECL-RAMs complying with the abovementioned description

Semi-custom logic array (Gate arrays) of C-MOS technology, in the form of a monolithic integrated circuit, with not less than 8,000 2-input NAND functions, contained in a housing the exterior dimensions of which do not exceed 39×39 mm, with not less than 179 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • MB 66000 VH

  or

• other identification markings relating to C-MOS logic arrays complying with the abovementioned description

Single-chip microcomputers, in the form of a monolithic integrated circuit, consisting of an arithmetical unit with a capacity of four bits plus a read-only memory (ROM) with a capacity of not less than 18 K bits and not more than 65 K bits and a random-access memory (RAM) with a capacity of not less than 512 bits and not more than 4 K bits, contained in a housing the exterior dimensions of which do not exceed 17×58 mm, with not more than 80 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • CD 3200-3299

  • TP 0310-03299

  • HD 38800

  • TP 0450-04599

  • HD 38820

  • TMC 0270-0279

  • TP 0480-04899

  • HD 44796

  • TMC 0500-0599

  • TP 0500-05999

  • HD 44800

  • TMC 0980-0989

  • HD 44801

  • TMC 1500-1599

  • HD 44820

  • TMC 1980-1999

  • HD 44840

  • HD 44860

  or

• other identification markings relating to single-chip microcomputers complying with the abovementioned description

Central processing unit of N-MOS (including H-MOS) technology (N-MOS CPU), in the form of a monolithic integrated circuit consisting of 16×16 bit service memory, a 16×20 bit service memory, a 32×32 bit service memory, an 8×8 bit service memory, a 16 bit register, two 20 bit registers, an 8 bit register, one 12 bit register, a 5 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • LSI-604041855

  or

• other identification markings relating to N-MOS central processing units complying with the abovementioned description

Contention resolving local area network (LAN) controllers, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 63×16 mm, with not more than 48 connecting pins, and bearing:

• an identification marking either consisting of the following combinations of figures or figures and letters or including one of those combinations:

  • MCM 68590

  • AM 7990

  • 8001

  • 8003

  • 82586

  or

• other identification markings relating to contention resolving local area network controllers complying with the abovementioned description

Hard-disc controllers of N-MOS (including H-MOS) technology (N-MOS HDCs), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×53 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • WD 1010

  • PD 7261

  or

• other identification markings relating to N-MOS HDCs complying with the abovementioned description

Multi-protocol communication controller of MOS technology (MOS-MPCC) for the transmission and receiving of data specialized in the synchronous mode, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 44 connecting pins or contact areas and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 2652

  • 16456

  • 68652

  • 8273

  • 8274

  or

• other identification markings relating to multi-protocol communication controllers (MOS-MPCC) complying with the abovementioned description

Arithmetic-logic units of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 32 bit register, one 24 bit register, one 4 bit register, twelve 1 bit registers, two 16×24 bit service memories, one logic network performing arithmetic and logic operations, decodifying logic, an error detection and management logic, one 8 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:

• the identification marking:

  • ALU 0486

  or

• other identification markings relating to arithmetic-logic units complying with the abovementioned description

Logic control circuits of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 7 bit register, three timers, one multiplexer sequential and combining networks intended to perform control operations, decodifying logic, error detection and managment logic and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:

• the identification marking:

  • MIC 0482

  or

• other identification markings relating to logic control circuits complying with the abovementioned description

Logic circuit of N-MOS (including H-MOS) technology (N-MOS LC) serving as a clock generator for central process unit, main memory and input/output interfaces, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:

• an identification marking either consisting of or including the following combination figures and letters:

  • H 108982 (MCC)

  or

• other identification markings relating to N-MOS logic circuits (N-MOS LCs) complying with the abovementioned description

Sequence control circuits of N-MOS (including H-MOS) technology, in the form of a monolithic integrated circuit, consisting of one 32 bit register, three 16 bit registers, one 16×16 bit service memory, one 7×17 bit last-in first-out (LIFO) memory, one adder circuit, decodifying logic, priority logic, error detection and management logic, one 16 bit multiplexer, one 8 bit counter and a timing network, contained in a housing the exterior dimensions of which do not exceed 23×82 mm, with not more than 64 connecting pins and bearing:

• the identification marking:

  • CSS 0484

  or

• other identification markings relating to sequence control circuits complying with the abovementioned description

Error correction and detection unit (ECDU) of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×62 mm, with not more than 48 connecting pins and bearing:

• an identification marking either consisting of or including the following combinations of figures and letters:

  • 2960

  • 74 F 630

  • 74 F 631

  • DP 8400

  • 74 LS 630

  • 74 LS 631

  or

• other identification markings relating to error correction and detection units (ECDUs) complying with the abovementioned description

Error detection and correction circuit of N-MOS (including H-MOS) technology capable of detecting and correcting single bit errors and detecting all double bit errors, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 contact areas and bearing:

• an identification marking either consisting of or including the following combination of figures:

  • 8206

  or

• other identification markings relating to N-MOS error detection and correction circuits complying with the abovementioned description

Burst error processor (BEP) or N-MOS (including H-MOS) technology for detecting and correcting multiple errors derived from a line of magnetic discs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • Z 8065

  • AM 9520

  • AM 9521

  or

• any other identification marking relating to N-MOS burst error processor complying with the abovementioned description

Electronic control circuit of bipolar technology in the form of a monolithic integrated circuit for the control of dynamic random-access memories (D-RAMs), capable of multiplexing address and generating timing, contained in a housing the exterior dimensions of which do not exceed 17×62 mm, with not more than 48 conncting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • DP 8408

  • DP 8409

  • MB 1422

  or

• other identification markings relating to electronic control circuits complying with the abovementioned description

Enhanced programmable communications interface (EPCI), in the form of a monolithic integrated circuit, contained in a housing the external dimensions of which do not exceed 16×38 mm, with not more than 28 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures:

  • 2661

  or

• other identification markings relating to EPCIs complying with the abovementioned description

Serial interfaces, capable of implementing the data stream encoding, decoding and associated control functions for a local area network, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 24 connecting pins and bearing:

• an identification marking either consisting of the following combination of figures or figures and letters or one of those combinations:

  • AM 7991

  • 8002

  • 8023

  • 82501

  or

• other identification markings relating to serial interface devices complying with the abovementioned description

Station digital interface circuit for parallel/serial or serial/parallel conversion of digital signals in telephone sets, of C-MOS technology (C-MOS STID), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins, and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • WCC 295 G

  or

• other identification markings referring to station interface digital circuits with the abovementioned description

Transceivers with four channels (Quad bus) of ALP Schottky technology with on-chip D type registers and internal ODD 4 bit parity generator/checker, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 9×28 mm, with not more than 20 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • AM 2907

  or

• other identification markings relating to transceivers (Quad bus) complying with the abovementioned description

Demodulator/tone decoder of bipolar technology for frequency decoding, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 14 connecting pins and bearing:

• an identification marking consisting of or including one of the following combination of figures and letters:

  • XR 211

  or

• other identification markings relating to demodulator tone decoders complying with the abovementioned description

C-MOS clock circuits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with more than 16 connecting pins, and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • HI 2060

  • HI 2065

  • MSM 5537

  • T 3605

  or

• other identification markings relating to clock circuits complying with the abovementioned description

for the production of automatic time-switches, instrument panel clocks and either of a similar type for motor vehicles (a)

C-MOS clock circuits, operating from a single 1,5 V power supply, with a liquid crystal display (LCD) driver, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 15×21 mm, with not more than 56 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • TC 8219 AT

  or

• other identification markings relating to C-MOS clock circuits complying with the abovementioned description

P-MOS 12/24-hour clock circuits, incorporating an elapsed time facility, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 54×14 mm, with not more than 42 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • MM 53124

  • LM 8363

  or

• other identification markings relating to clock circuits complying with the abovementioned description

Amplifier, in the form of a monolithic integrated analogue circuit, contained in a housing the dimensions of which do not exceed 2×4×4 mm, with not more than 10 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combination of figures and letters:

  • V 35

  • C 05

  or

• other identification markings relating to amplifiers complying with the abovementioned description

This amplifier is for the manufacture of products falling within subheading 90.19 B I

Four-line drivers of advanced, low-power Schottky technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 20×7 mm, with not more than 16 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • AM 26LS29

  • AM 26LS31

  • SN 75172

  • SH 75174

  or

• other identification markings relating to four-line drivers of ALPS technology complying with the abovementioned description

16 bit microprocessor of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 67×24 mm, with not more than 52 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • AM 29116

  or

• other identification markings relating to microprocessors complying with the abovementioned description

Numeric processor extension units of N-MOS (including H-MOS) technology (N-MOS NPX) containing not more than 14 registers, in the form of a monolithic integrated circuit, contained in a package the exterior dimensions of which do not exceed 15×52 mm, with not more than 40 connecting pins and bearing:

• an identification marking consisting of or including one of the following combination of figures:

  • 8087-3

  • 8087-2

  • 80287

  or

• other identification markings, relating to N-MOS NPXs complying with the abovementioned description

Floppy-disc data separator (FDDS), in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 27×8 mm, with not more than 20 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • FDC 9216

  • FDC 9126-B

  • WD 9216-00

  • WD 9216-01

  • FDC 9229 T

  • FDC 9229 BT

  or

• other identification markings relating to FDDS, complying with the abovementioned description

C-MOS-phoneme speech synthesizer, with a supply current of less than 10 mA, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 24 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • SC 01

  • SSI 263

  or

• other identification markings relating to phoneme speech synthesizers complying with the abovementioned description

Triple video digital to analogue converter (VDAC), each channel having a capacity of not more than 8 bits with a maximum conversion time of not more than 25 nano-seconds, in the form of a hybrid integrated circuit whether or not incorporating three random access memories (RAMs) each with a storage capacity of not more than 2 K bits, contained in a housing the exterior of which do not exceed 54×62 mm, with not more than 61 connecting pins and bearing:

• an identification marking consisting of one of the following combinations of letters and figures:

  • VDAC 444 TD

  • RGB DAC 4 T

  • RGB DAC 8 E

  • RGB DAC 8 T

  or

• other identification markings relating to triple VDACs complying with the abovementioned description

Electronically adjustable differential amplifiers for at least the full range of signals from 0 to not less than 400 MHz in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 11×11 mm, with not more than 16 connecting pins, and bearing:

• an identification marking consisting of or containing the following combination of figures:

  • 0078-10

  or

• other identification markings relating to amplifiers complying with the abovementioned description

Static, random-access memories of bipolar technology (bipolar SRAMs), in the form of a monolithic integrated circuit and with a storage capacity of 64×9 bits, contained in a housing the exterior dimensions of which do not exceed 15×40 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • 82 S 09

  or

• other identification markings relating to bipolar SRAMs complying with the abovementioned description

8 bit (octal) dynamic memory bipolar driver in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 20 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • AM 2965

  • AM 2966

  or

• other identification markings relating to dynamic memory bipolar drivers complying with the above description

Bus interface circuits for bipolar technology with 9 or 10 bit registers, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 9×34 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of numbers and letters:

  • AM 28821

  • AM 29843

  • AM 29823

  • AM 29844

  • AM 29824

  or

• other identification markings relating to BUS interface circuits which comply with the above description

Multiple bus interface circuit (Multiple Bus Buffer) of low power Schottky technology for interfacing the error correction and detection unit system data bus and dynamic random access memory (D-RAM), in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 8×33 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including the following combination of numbers and letters:

  • AM 2961

  or

• other identification markings relating to error correction multiple bus buffers which comply with the above description

Status and shift control unit of bipolar technology in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×57 mm with not more than 42 connecting pins, and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • AM 2904

  or

• other identification markings relating to status and shift control units complying with the above description

Amplifier, in the form of a monolithic integrated analog circuit the exterior dimensions of which do not exceed 3×3 mm for use in the manufacture of products falling within subheading 90.19 B I (a)

Text-co-processor, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins, and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • C 82730

  or

• other identification markings relating to text-co-processors complying with the above description

Single-chip-microcomputer, in the form of a monolithic integrated circuit, consisting of an arithmetic-logic unit with a capacity of 8 bits plus an electronic, programmable, read-only memory (EPROM) UV erasable with a capacity of 32 K bits and a random access memory (RAM) with a capacity of 1 K bit, two 16 bit counters, contained in a housing the exterior dimensions of which do not exceed 15×20 mm, with a quartz window and not more than 40 connecting pins and bearing:

• an identification marking either consisting of the following combination of figures or including this combination:

  • 8751

  or

• other identification markings relating to single-chip-microcomputers which conform to the foregoing description

Single-chip microcomputers in C-MOS technology, in the form of a monolithic integrated circuit consisting of an ALU with a capacity of 32 bits plus a ROM with a capacity of 24 K bits and a RAM with a capacity of 2 K bits, contained in a housing the exterior dimensions of which are not less than 30×30 mm, with a minimum of 88 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • MB 8764

  or

• other identification markings relating to single-chip microcomputers complying with the abovementioned description

Subscriber line interface circuit (SLIC) with direct internal relay drive, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures or figures and letters:

  • 5502

  • ICME 00155/RIFA (PBL) 3735

  or

• other identification markings relating to SLICs complying with the abovementioned description

Input output circuit of N-MOS (including H-MOS) technology for data control equipped with a timing control with a static random access memory (S-RAM) with a capacity of 128×8 bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of one of the following combinations of figures or letters and figures or including one of those combinations:

  • 6532

  • CO 10750

  or

• other identification markings relating to input output control circuits complying with the abovementioned description

4-channel drive circuit for stepping motor, of bipolar technology, with incorporated diodes, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 6×20 mm, with 16 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • HA 13007

  • 75437 A

  or

• other identification markings relating to motor drive circuits complying with the abovementioned description

Analog/digital monolithic integrated circuit used to control brushless motors, maintaining them at a constant speed, contained in a housing the exterior dimensions of which do not exceed 6×25 mm, with 18 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • MGA 3015 A

  or

• other identification markings relating to integrated circuits complying with the abovementioned description

Analog/digital monolithic integrated circuit of bipolar technology for interface signals between the peripheral hard-disk memory unit and the central unit, contained in a housing the dimensions of which do not exceed 15×50 mm, with not more than 40 connecting pins, and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • AD 581 C

  or

• other identifications markings relating to integrated circuits complying with the abovementioned description

Voltage-multiplier circuit for operating stepping motors, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 6×24 mm, with not more than 20 connecting pins, and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • P 20 A579

  or

• other identification markings relating to voltage-multiplier circuits complying with the above description

Memory management unit of N-MOS (including H-MOS) technology (N-MOS MMU) with a maximum addressing capacity of 16 M bytes, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 25×82 mm, with not more than 64 connecting pins or 68 contact areas and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • 68451 L 6

  • 68451 L 8

  • 68451 L 10

  • 68451 ZBL 6

  • 68451 ZBL 8

  • 68451 ZBL 10

  or

• other identification markings relating to N-MOS MMUs complying with the above description

Electronic circuit of advanced low power Schottky (ALPS) technology for the asynchronous control of signal lines (bus) and the conversion of a local bus into a multiplexed bus (BAM) in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 37×13 mm, with not more than 28 connecting pins and bearing:

• the identification marking:

  • 68452

  or

• other identification markings relating to ALPS BAMs conforming to the foregoing description

Cathode-ray tube controller (CRTC) of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 62×16 mm, with not more than 48 connecting pins and bearing:

• an identification marking either consisting of or including the following combinations of figures and letters:

  • AM 8052

  • D 8275 H

  • P 8275 H

  or

• other identification markings relating to CRTCs complying with the abovementioned description

Display controller and character generator (DCCG) for liquid crystal dot matrix display system in the form of a monolithic integrated circuit of C-MOS technology contained in a housing the exterior dimensions of which do not exceed 20×26 mm, with not more than 60 connecting pins, and bearing:

• an identification marking consisting of the following combination of figures and letters:

  • HD 61830

  or

• other identification markings relating to C-MOS Display Controller and character generators complying with the abovementioned description

Video digital to analog converter (VDAC) with a maximum conversion time of 10 nanoseconds, in the form of a hybrid integrated circuit, contained in a housing the exterior dimensions of which do not exceed 20×35 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • VDAC 0405 H

  • VDAC 0605 H

  • VDAC 0805 H

  or

• other identification markings relating to VDACs complying with the abovementioned description

Input/output management microprocessor of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit the exterior dimensions of which do not exceed 17×53 mm, with not more than 40 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • 8089

  or

• other identification markings relating to input/output management microprocessors complying with the abovementioned description

Interpolation pulse generator of C-MOS technology for controlling geometrical functions, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • KM 3701

  or

• other identification markings relating to interpolation modules complying with the abovementioned description

Static, random access memory of C-MOS technology (C-MOS-S-RAM) with a storage capacity of 32 K bits, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 18×39 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • TC 5532

  or

• other identifying marking relating to C-MOS-S-RAM complying with the abovementioned description

Controller for servo-devices of C-MOS technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×54 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • KM 3702

  or

• other identification markings relating to controllers complying with the abovementioned description

Function generator of bipolar technology for the generation of variable waveforms, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 16 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures and letters:

  • XR 2206

  • XR 8038

  or

• other identification markings relating to function generators complying with the abovementioned description

Video amplifier of bipolar technology in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×17 mm, with not more than 44 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 702

  • 703

  or

• other identification markings relating to video amplifiers complying with the abovementioned description

for use in the manufacture of portable colour television cameras

Amplifier, of bipolar technology for the amplification of either read or write signals of floppy discs, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 11×29 mm, with not more than 22 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • XR 2247

  • XR 3470

  or

• other identification markings relating to amplifiers complying with the abovementioned description

Aperture and colour temperature balance controller of bipolar technology, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 17×17 mm, with not more than 44 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures:

  • 704

  or

• other identification markings relating to devices complying with the abovementioned description

for use in the manufacture of portable colour television cameras (a)

Impulse generator in C-MOS technology, in the form of a monolithic integrated digital circuit, contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:

• an identification marking consisting of or including one of the following combination of figures:

  • 705

  • 706

  or

• other identification markings relating to impulse generators complying with the abovementioned description

for use in the manufacture of portable colour television cameras (a)

Static random access memories of bipolar technology (bipolar S-RAMs) in the form of a monolithic integrated circuit consisting of a substrate layer on which are mounted either 1 or 2 chips each having a storage capacity of 1 K bit, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures:

  • 770639

  • 770823

  • 5120360

  • 7379769

  or

• other identification markings relating to bipolar S-RAMs complying with the abovementioned description

Static memories consisting of two stacked substrate layers with one or two static random access memories of bipolar technology (bipolarS-RAMS) in the form of monolithic integrated circuits, each with a storage capacity of 1 K bits and with a maximum storage of 4 K bits, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 23 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures:

  • 770965

  • 4599497

  • 7379442

  or

• other identification markings relating to static memories complying with the abovementioned description

Programmable digital signal synthesizer of C-MOS technology with 32 frequency generators to generate 8 notes each and a simultaneous output of up to 160 notes in the form of a monolithic integrated circuit contained in a housing, the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins or contact areas. The housing bears:

• MEG

or

• other identification markings relating to digital synthesizers complying with the abovementioned description

Repeater circuit, of bipolar technology for the regeneration of pulse code-modulated signals, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 10×21 mm, with not more than 16 connecting pins and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • XR C 240

  or

• other identification markings relating to repeater circuits complying with the abovementioned description

Dynamic random access memory controller of N-MOS (including H-MOS) technology (N-MOS D-RAM controller) capable of multiplexing addresses and generating timing, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×62 mm, with not more than 48 connecting pins or 52 contact areas, and bearing:

• an identification marking consisting of or including the following combination of figures and letters:

  • C 8208

  or

• other identification markings relating to N-MOS D-RAM controllers complying with the abovementioned description

C-MOS clock/calendar circuit, incorporating a quartz crystal oscillator, independent timer recorders and a timer, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 7×20 mm with not more than 16 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • MM 58174A

  • 58274

  or

• other identification markings relating to clock/calendar circuits complying with the abovementioned description

Programmable asynchronous communication element circuit in N-MOS (including H-MOS) technology, for the asynchronous transmission and reception of data, in the form of a monolithic integrated circuit, contained in a housing the exterior dimensions of which do not exceed 16×54 mm, with not more than 40 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • INS 8250

  • WD 8250

  or

• other identification markings relating to ACE circuits complying with the abovementioned description

Encoder/decoder circuit using the “MANCHESTER” (MED) code for the transmission or retransmission of serial data, of C-MOS technology and in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 16×33 mm, with not more than 20 pins and bearing:

• an identification marking consisting or including the following combination of figures and letters:

  • HD 6409

  or

• other identification markings relating to circuits complying with the abovementioned description

UV-erasable programmable read-only memories (EPROMs) in the form of a monolithic integrated circuit with a storage capacity of 512 K bits, contained in a housing the exterior dimensions of which do not exceed 20×42 mm, with a quartz window on the upper surface. The housing bears:

• an identification marking consisting or including the following combination of figures and letters:

  • AM 27512

  or

• other identification markings relating to EPROMs complying with the abovementioned description

TTL Logic modules in bipolar technology, with not more than six logic functions independent of each other and not interconnected, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 17×34 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures or letters:

  • SH 767 369

  • SH 998 088

  or

• another identification marking relating to logic modules as described above

6-Channel monolithic integrated circuit (Read/write data processor circuit) for the amplification and conversion of read signals and conversion of write signals for hard disc drives, contained in a housing the exterior dimensions of which do not exceed 19×38 mm, with not more than 28 connecting pins or contact areas and bearing:

• an identification marking consisting of or including the following combination of letters and figures:

  • SSI 540

  or

• other identification markings relating to integrated circuits complying with the abovementioned description

8-Channel control circuit for maintaining a constant electronmagnetic traction force with incorporated diodes and a storage capacity of 8 bits, in the form of a monolithic integrated circuit, of C-MOS technology contained in a housing the exterior dimensions of which do not exceed 9×28 mm, with not more than 22 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • UCN 5801

  or

• other identification markings relating to control circuits complying with the abovementioned description

4-Channel control circuit for maintaining a constant electromagnetic traction force with incorporated diodes and a storage capacity of 4 bits, in the form of a monolithic integrated circuit of C-MOS technology, contained in a housing the exterior dimensions of which do not exceed 7×22 mm, with not more than 16 connecting pins and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • UCN 5813

  or

• other identification markings relating to control circuits complying with the abovementioned description

Six-channel monolithic integrated circuit for the generation of read/write signals for hard disc drives, contained in a housing the exterior dimensions of which do not exceed 13×13 mm, with not more than 28 connecting pins and bearing:

• an identification marking consisting of or including the following combination of letters and figures:

  • SSI 117

  or

• other identification markings relating to integrated circuits complying with the abovementioned description

Programmable non-erasable read-only memories (PROMS) with a storage capacity of 16 K bits, in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 39×17 mm, with not more than 32 connecting pins or contact areas and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • 27 PS 191 A

  • 7 C 245

  • 7 C 292

  • 29683

  • 7 C 291

  • HM 6616

  or

• other identification markings relating to PROMS complying with the abovementioned description

Hard Disc Data Separator (HDDS) of N-MOS (including H-MOS) technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 8×33 mm, with not more than 24 connecting pins and bearing:

• an identification marking consisting of or including one of the following combinations of figures and letters:

  • DP 8460-2

  • DP 8460-3

  • DP 8460-4

  or

• other identification markings relating to devices complying with the abovementioned description

Control and interface circuit for central processor (CPU-Controller) of HC-MOS technology in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 25×25 mm, with not more than 68 connecting pins and bearing:

• an identification marking consisting of or including the following combinations of letters and figures:

  • FE 2000

  • LIA0392

  or

• other identification markings relating to control and interfacing circuits complying with the abovementioned description

Amplifiers for a full range of signals from 0 to 60 KHz in the form of a monolithic integrated circuit contained in a housing the exterior dimensions of which do not exceed 6×13×26 mm, with not more than 18 connecting pins and a leakage of not more than 0.3μA and bearing:

• an identification marking either consisting of or including the following combination of figures and letters:

  • ISO 100

  or

• other identification markings relating to amplifiers complying with the abovementioned description, for use in the manufacture of telephone exchanges

Light-emitting diode (LED) made from a gallium-based semiconductor compound contained in a housing the exterior dimensions of which do not exceed 20×21 mm, with 2 connecting pins and bearing:

• an identification marking consisting of or including one of the following identification markings:

  • LT 9305

  • LY 9306

  • SLF 209

  • SLF 909

  or

• other identification markings relating to LEDs, complying with the abovementioned description: for use in the manufacture of radio broadcast receivers and sound recorders or reproducers (a)

Single-chip microcomputer of C-MOS technology, in the form of a monolithic integrated circuit, consisting of an arithmetical logic unit (ALU) with an organization of 4 bits, a read-only memory (ROM) with a storage capacity of 2 K×8 bits, a dual-tone, multi-frequency (DTMF) generator, a random access memory (RAM), with a storage capacity of 1 K bit, a random access memory (RAM) with a storage capacity of 512 bits and two 12-bit counters, contained in a housing the exterior dimensions of which do not exceed 15×40 mm, with not more than 42 connecting pins and bearing:

• an identification marking consisting of the following combination of figures and letters:

  • T 6978

  or

• other identification markings relating to single-chip microcomputers complying with the abovementioned description

Asynchronous First-in First-out (FIFO) memories of C-MOS technology in the form of a monolithic integrated circuit with a capacity of 64×4 bits, or 64×5 bits, contained in a housing the exterior dimensions of which do not exceed 11×24 mm with not more than 18 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures or figures and letters:

  • CY7C401

  • CY7C402

  • CY7C403

  • CY7C404

  • CY 3341

  or

• other identification markings relating to asynchronous First-in First-out memories complying with the abovementioned description

Static Random Access Memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 16 K bits and an access time of not more than 45 ns, contained in a housing the exterior dimensions of which do not exceed 9×27 mm, with not more than 20 connecting pins or contact areas, and bearing:

• an identification marking either consisting of or containing the following combination of figures and letters:

  • CY7C168

  • CY7C169

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Static Random Access Memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 16×4 bits, an access time not exceeding 35 ns, contained in a housing the exterior dimensions of which do not exceed 9×21 mm, with not more than 16 connecting pins and bearing:

• an identification marking either consisting of or containing one of the following combinations of figures and letters:

  • CY7C189

  • CY7C190

  • CY74S189

  • CY54S189

  • CY27S03

  • C727S07

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Static random access memories of C-MOS technology (C-MOS S-RAMs) in the form of a monolithic integrated circuit with a storage capacity of 256×4 bits and an access time not exceeding 60 ns, contained in a housing the exterior dimensions of which do not exceed 12×29 mm, with not more than 22 connecting pins and bearing:

• an identification marking either consisting of or including one of the following combinations of figures or figures and letters:

  • CY7C122

  • CY93422/93L422

  or

• other identification markings relating to C-MOS S-RAMs complying with the abovementioned description

Tungsten elements coated with insulating material, grids and cathodes for use in the manufacture of electron guns for monochrome cathode-ray tubes

Electromagnetic displays consisting of seven electromagnetic coils, which by means of the residual magnesium in the stators provide indefinite memory, and seven pivoting light-reflecting segments each of which is attached to a bar magnet. The display is contained in a housing the exterior dimensions of which do not exceed 28×36×50 mm

Portable machines for reading and writing Braille with tactile read-out and magnetic tape cassette recording systems, microphone and speaker, equipped with a standard electromechanical Braille typewriter keyboard and an electromechanical Braille read-out unit with 20 characters, all contained in a case whose exterior dimensions do not exceed 24×36×11 cm

Octagonal Fresnel lens of acrylic resin unmounted, for use in overhead projectors

Material consisting of a polarizing film, supported on one or both sides by transparent material

Image reversers made up from an assembly of optical fibres

Image reversers made up from an assembly of optical fibres

Heart valves and parts thereof

Vascular prostheses of which the largest opening has an internal diameter not exceeding 8 mm

Vascular prostheses incorporating a tubular carrier made of yarns enclosed in animal collagen

Assembly consisting of a printed circuit on which is mounted one quartz oscillator, at least one watch circuit and at least one capacitor, or a thickness not exceeding 5 mm for the manufacture of products falling within Chapter 91

Assembly consisting of a printed circuit on which is mounted a watch circuit, with a thickness not exceeding 5 mm, for the manufacture of products falling within Chapter 91

Receivers of hearing aids, contained in a housing whose external dimensions excluding connecting points do not exceed 5×6×8 mm

Reading appliances for the blind, in which a miniature camera using photo-transistors transmits letters onto a scanning board with piezo-electric pencils, and their parts and accessories

Non-fibrous plastic pen-tips with an internal channel

Flint wheels, whether or not with guard wheels, for use in the manufacture of non-refillable gas-fuelled pocket lighters

Piezo-electric ignition mechanism