Paragraph 3C Equipment, Assemblies and Components

Changes not yet applied. Later legislation changes this provision in ways not yet written into the text below:

Sch 1, Pt III am by Export of Goods (Control) 2001 art 6
Sch 1, Pt I, Group 4 rev by Export of Goods (Control) 2001 art 4
Sch.1, Pt.I, Croup 1, para.1 revoked by Export of Goods (Control) 1996 art.2(f)
Sch.1, Pt.II revoked by Export of Goods (Control) 1996 art.2(g)
Sch.1, Pt.III substituted by Export of Goods (Control) 1996 art.2(h), Sch.1
Sch.1, Pt.I, Group 2 substituted by Export of Goods (Control) 1997 art.5, Sch.2
Sch.1, Pt.I, Group 3 amended by Export of Goods (Control) 1997 art.6
Sch.1, Pt.III amended by Export of Goods (Control) 1997 art.7
Sch.1, Pt.I rev.in pt. by Export of Goods (Control) 1999 art.2(b)
Sch.1, Pt.I amended by Export of Goods (Control) 1999 art.4
Sch.1, Pt.III defn(s). amended by Export of Goods (Control) 1999 art.5(1)(2)(a) (b)(d)
Sch.1, Pt.III (defn. of enzymes) revoked by Export of Goods (Control) 1999 art.5(1)(2)(c)
Sch.1, Pt.III amended by Export of Goods (Control) 1999 art.5(3)-(6)
Sch 1, Pt I, Group 2 am by Export of Goods (Control) 2001 art 5
Sch.1 rev. in pt. by Dual-Use and Related Goods (Export Control) 1995 reg.13(b)(iv)
Sch.1, Pt III, Group 1 amended by Export of Goods (Control) Order 1994 1994 art.2(c)
Sch.1, Pt III, Group 3 amended by Export of Goods (Control) Order 1994 1994 art.2(d)
Sch.1, Pt.I, Group 1, para.1 amended by Export of Goods (Control) 1995 art.3(2)
Sch.1, Pt.I, Group 1, para.2 amended by Export of Goods (Control) 1995 art.2(2)
Sch.1, Pt.III amended by Dual-Use and Related Goods (Export Control) 1996 reg. 4
Sch. 1 Pt. 3 modified by Dual-Use and Related Goods (Export Control) 1996 reg. 14
Sch. 1 Pt. 3 word deleted by Export of Goods (Control) 2000 art. 4(2)(a)
Sch. 1 Pt. 3 words inserted by Export of Goods (Control) 2000 art. 4(2)(b)
Sch.1, Pt III, Group 1 am and rev. in Pt. by Export of Goods (Control) Order 1994 1994 art.2(b)
Sch.1, Pt III, Group 3 am and rev. in Pt. by Export of Goods (Control) Order 1994 1994 art.2(c)
Sch.1, Pt.I, Group 3 amended by Export of Goods (Control) 1996 art.3
Sch.1, Pt.III amended by Export of Goods (Control) 2000 art. 4
Sch.1, Pt.III amended by Export of Goods (Control) 2000 art.3
Sch. 1 Pt. 3 modified by Dual-Use and Related Goods (Export Control) 1996 reg. 2(1)
Sch.1, Pt.I amended by Export of Goods (Control) 1999 art.2
Sch. Pt.III, entry HL7 amended by Export of Goods (Control) 1997 art.2
Sch.1, Pt III, Group 3 amended by Export of Goods (Control) Order 1994 1994 art.2
Sch 1, Pt I, Group 2 am by Export of Goods (Control) 2003 art 2(1), (2), Sch 1, para 1
Sch 1, Pt I, Group 2 rev in pt by Export of Goods (Control) 2003 art 2(1), (3), Sch 2
Sch 1, Pt III am by Export of Goods (Control) 2003 art 2(1), (2), Sch 1, para 2
Sch 1, Pt III rev in pt by Export of Goods (Control) 2003 art 2(1), (3), Sch 2
Sch 1, Contents rev in pt by Export of Goods (Control) 2002 art 2(1), (2)
Sch 1, Pt I, Group 3 rev by Export of Goods (Control) 2002 art 2(1), (3)
Sch 1, Pt III, ML4 am by Export of Goods (Control) 2002 art 2(1), (6)
Sch 1, Pt III, ML8 subst by Export of Goods (Control) 2002 art 2(1), (8), Schedule
Sch 1, Pt III, ML10 am by Export of Goods (Control) 2002 art 2(1), (7)
Sch 1, Pt III, para 2 defn(s) rev by Export of Goods (Control) 2002 art 2(1), (4)
Sch 1, Pt III, para 2 defn(s) added by Export of Goods (Control) 2002 art 2(1), (5)

Materials

3C001

Hetero-epitaxial materials consisting of a substrate with stacked epitaxially grown multiple layers of:

Silicon;

Germanium; or

III/V compounds of gallium or indium.

Note: III/V compounds are polycrystalline or binary or complex monocrystalline products consisting of elements of groups IIIA and VA of Mendeleyev’s periodic classification table (gallium arsenide, gallium-aluminium arsenide, indium phosphide, etc.).

3C002

Resist materials, as follows, and substrates coated with controlled resists:

Positive resists for semiconductor lithography specially adjusted (optimised) for use at wavelengths below 370 nm;

All resists, for use with electron beams or ion beams, with a sensitivity of 0.01 microcoulomb/mm² or better;

All resists, for use with X-rays, with a sensitivity of 2.5 mJ/mm² or better;

All resists optimized for surface imaging technologies, including silylated resists.

Note: Silylation techniques are defined as processes incorporating oxidation of the resist surface to enhance performance for both wet and dry developing.

3C003

Organo-inorganic compounds as follows:

Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99.999%;

Organo-arsenic, organo-antimony and organo-phosphorus compounds having a purity (inorganic element basis) better than 99.999%.

Note: This entry only specifies compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule.

3C004

Hydrides of phosphorus, arsenic or antimony, having a purity better than 99.999%, even diluted in inert gases or hydrogen.

Note: This entry does not specify hydrides containing 20% molar or more of inert gases or hydrogen.