Division [3B503] Scanning Electron Microscope (SEM) equipment designed for imaging semiconductor devices or integrated circuits, having all of the following:F1
| a. | Stage placement accuracy less (better) than 30 nm; | ||||
| b. | Stage positioning measurement performed using laser interferometry; | ||||
| c. | Position calibration within a Field-Of-View (FOV) based on laser interferometer length-scale measurement; | ||||
| d. | Collection and storage of images having more than 2 x 10 8 pixels; | ||||
| e. | FOV overlap of less than 5% in vertical and horizontal directions; | ||||
| f. | Stitching overlap of FOV less than 50 nm; and | ||||
| g. | Accelerating voltage more than 21 kV; | ||||
Note 1.: 3B503 includes SEM equipment designed for chip design recovery. | |||||
Note 2.: 3B503 does not control SEM equipment designed to accept a Semiconductor Equipment and Materials International (SEMI) standard wafer carrier, such as a 200 mm or larger Front Opening Unified Pod (FOUP). | |||||
Annotations
Textual amendments
- F1
Annex 1 Entries 3B501, 3B503, 3B504 inserted (16.12.2025) by The Export Control (Amendment) (No. 2) Regulations 2025 (S.I. 2025/1197), regs. 1(2), 9(3)(d)