Division [3C] MaterialsF1

United Kingdom

1. [3C001]Hetero-epitaxial materials , not specified in 3C507, consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:
2. [3C002]Resist materials as follows and "substrates" coated with the following resists:
3. [3C003]Organo-inorganic compounds as follows:
4. [3C004]Hydrides of phosphorus, arsenic or antimony, having a purity greater (better) than 99,999 %, even diluted in inert gases or hydrogen.
5. [3C005]High resistivity materials as follows:
6. [3C006]Materials, not specified in 3C001, consisting of a "substrate" specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride, aluminium gallium nitride, gallium oxide (Ga2O3) or diamond.
7. [3C507]Epitaxial materials consisting of a “substrate” having at least one epitaxially grown layer of any of the following:
8. [3C508]Fluorides, hydrides, or chlorides of silicon or germanium, containing any of the following:
9. [3C509]Silicon, silicon oxides, germanium or germanium oxides, containing any of the following: