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Division [3C002] Resist materials as follows and "substrates" coated with the following resists:F1

Changes not yet applied. Later legislation changes this provision in ways not yet written into the text below:

  1. a..

    Resists designed for semiconductor lithography as follows:

    1. 1..

      Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;

    2. 2..

      Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;

  2. b..

    All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better;

  3. c..

    Not used;

  4. d..

    All resists optimised for surface imaging technologies;

  5. e..

    All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.

Annotations

Textual amendments

F1

Substituted by Commission Delegated Regulation (EU) 2020/1749 of 7 October 2020 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items.