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Division [3C001] Hetero-epitaxial materials , not specified in 3C507, consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:F1F2F3

Changes not yet applied. Later legislation changes this provision in ways not yet written into the text below:

  1. a..

    Silicon (Si);

  2. b..

    Germanium (Ge);

  3. c..

    Silicon carbide (SiC); F4...

  4. d..

    "III/V compounds" of gallium or indium.

    Note: 3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.

  5. e..

    F5Gallium oxide (Ga2O3); or

  6. f..

    Diamond (C);

Annotations

Textual amendments

F1

Substituted by Commission Delegated Regulation (EU) 2020/1749 of 7 October 2020 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items.

F2

Words in Annex 1 Entry 3C001 inserted (1.4.2024) by The Export Control (Amendment) Regulations 2024 (S.I. 2024/346), regs. 1(1), 3(10)(a)

F3

Words in Annex 1 Entry 3C001 substituted (16.12.2025) by The Export Control (Amendment) (No. 2) Regulations 2025 (S.I. 2025/1197), regs. 1(2), 9(4)(a)

F4

Word in Annex 1 Entry 3C001.c omitted (31.3.2023) by virtue of The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xii)

F5

Words in Annex 1 Entry 3C001 inserted (31.3.2023) by The Export Control (Military and Dual-Use Lists) (Amendment) Regulations 2023 (S.I. 2023/302), regs. 1, 5(2)(d)(xiii)